TWI365603B - A thin film bulk acoustic resonator with a mass loaded perimeter - Google Patents

A thin film bulk acoustic resonator with a mass loaded perimeter

Info

Publication number
TWI365603B
TWI365603B TW094116372A TW94116372A TWI365603B TW I365603 B TWI365603 B TW I365603B TW 094116372 A TW094116372 A TW 094116372A TW 94116372 A TW94116372 A TW 94116372A TW I365603 B TWI365603 B TW I365603B
Authority
TW
Taiwan
Prior art keywords
thin film
bulk acoustic
acoustic resonator
film bulk
mass loaded
Prior art date
Application number
TW094116372A
Other languages
English (en)
Other versions
TW200620820A (en
Inventor
Hongjun Feng
R Shane Fazzio
Richard Ruby
Paul Bradley
Original Assignee
Avago Technologies Wireless Ip
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/990,201 external-priority patent/US7280007B2/en
Application filed by Avago Technologies Wireless Ip filed Critical Avago Technologies Wireless Ip
Publication of TW200620820A publication Critical patent/TW200620820A/zh
Application granted granted Critical
Publication of TWI365603B publication Critical patent/TWI365603B/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173Air-gaps
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02118Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW094116372A 2004-10-01 2005-05-19 A thin film bulk acoustic resonator with a mass loaded perimeter TWI365603B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61525504P 2004-10-01 2004-10-01
US10/990,201 US7280007B2 (en) 2004-11-15 2004-11-15 Thin film bulk acoustic resonator with a mass loaded perimeter

Publications (2)

Publication Number Publication Date
TW200620820A TW200620820A (en) 2006-06-16
TWI365603B true TWI365603B (en) 2012-06-01

Family

ID=35395169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116372A TWI365603B (en) 2004-10-01 2005-05-19 A thin film bulk acoustic resonator with a mass loaded perimeter

Country Status (5)

Country Link
JP (1) JP5005903B2 (zh)
KR (1) KR20060053994A (zh)
CN (1) CN1801614B (zh)
GB (1) GB2418791A (zh)
TW (1) TWI365603B (zh)

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US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7369013B2 (en) * 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7868522B2 (en) 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US7737807B2 (en) 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7675390B2 (en) 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US7463499B2 (en) 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
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JP5080858B2 (ja) * 2007-05-17 2012-11-21 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
WO2009011022A1 (ja) 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
WO2009028027A1 (ja) 2007-08-24 2009-03-05 Fujitsu Limited 圧電薄膜共振子、それを用いたフィルタ、そのフィルタを用いたデュプレクサおよびそのフィルタまたはそのデュプレクサを用いた通信機
US7791435B2 (en) 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
JP5563739B2 (ja) 2008-02-20 2014-07-30 太陽誘電株式会社 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置
WO2009133511A1 (en) * 2008-04-29 2009-11-05 Nxp B.V. Bulk acoustic wave resonator
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
CN102301590B (zh) 2009-02-20 2014-07-02 宇部兴产株式会社 薄膜压电谐振器以及使用它的薄膜压电滤波器
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
JP2011160232A (ja) * 2010-02-01 2011-08-18 Ube Industries Ltd 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
JP2012244616A (ja) 2011-05-24 2012-12-10 Taiyo Yuden Co Ltd 圧電薄膜共振子、フィルタおよびモジュール
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
JP5918522B2 (ja) 2011-12-12 2016-05-18 太陽誘電株式会社 フィルタおよびデュプレクサ
WO2013175985A1 (ja) 2012-05-22 2013-11-28 株式会社村田製作所 バルク波共振子
JP6085147B2 (ja) 2012-11-15 2017-02-22 太陽誘電株式会社 弾性波デバイスおよびその製造方法
JP6336712B2 (ja) 2013-01-28 2018-06-06 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
CN103296993A (zh) * 2013-04-11 2013-09-11 天津大学 谐振器及其制造方法
JP5591977B2 (ja) * 2013-04-30 2014-09-17 太陽誘電株式会社 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置
JP6185292B2 (ja) 2013-06-10 2017-08-23 太陽誘電株式会社 弾性波デバイス
JP6333540B2 (ja) 2013-11-11 2018-05-30 太陽誘電株式会社 圧電薄膜共振子、フィルタ、及び分波器
JP6325798B2 (ja) 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6325799B2 (ja) 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6371518B2 (ja) 2013-12-17 2018-08-08 太陽誘電株式会社 圧電薄膜共振器およびその製造方法、フィルタ並びにデュプレクサ
US9401691B2 (en) * 2014-04-30 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with air-ring and temperature compensating layer
JP6594619B2 (ja) 2014-11-14 2019-10-23 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6441761B2 (ja) 2015-07-29 2018-12-19 太陽誘電株式会社 圧電薄膜共振器及びフィルタ
JP6423782B2 (ja) 2015-12-09 2018-11-14 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
JP6368298B2 (ja) 2015-12-14 2018-08-01 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6510987B2 (ja) 2016-01-14 2019-05-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6469601B2 (ja) 2016-02-05 2019-02-13 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6556099B2 (ja) 2016-06-16 2019-08-07 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
CN108023563B (zh) * 2016-11-01 2021-03-26 稳懋半导体股份有限公司 具质量调整结构的体声波共振器及其应用于体声波滤波器
US11228299B2 (en) 2017-02-02 2022-01-18 Taiyo Yuden Co., Ltd. Piezoelectric thin film resonator with insertion film, filter, and multiplexer
DE102017105432B3 (de) * 2017-03-14 2018-08-23 Friedrich-Alexander-Universtität Erlangen-Nürnberg Resonator und Verfahren zum Bereitstellen eines Resonators
JP6903471B2 (ja) 2017-04-07 2021-07-14 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
JP6869831B2 (ja) 2017-07-03 2021-05-12 太陽誘電株式会社 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ
DE102018101442B4 (de) * 2018-01-23 2019-09-12 RF360 Europe GmbH BAW-Resonator mit erhöhtem Gütefaktor
JP2020053966A (ja) 2018-09-24 2020-04-02 スカイワークス グローバル プライベート リミテッド バルク弾性波デバイスにおける多層隆起フレーム
CN109546985A (zh) * 2018-11-02 2019-03-29 天津大学 体声波谐振器及其制造方法
CN111193481A (zh) * 2018-11-14 2020-05-22 天津大学 体声波谐振器、滤波器和电子设备
CN111342800A (zh) * 2018-12-19 2020-06-26 天津大学 带离散结构的体声波谐振器、滤波器和电子设备
CN113131896B (zh) * 2019-12-31 2024-04-30 中芯集成电路(宁波)有限公司 一种薄膜压电声波谐振器及其制造方法及滤波器
CN113659957B (zh) * 2020-04-29 2024-04-12 华为技术有限公司 声波谐振器及无线通信设备
CN111934643B (zh) * 2020-07-13 2021-06-01 诺思(天津)微系统有限责任公司 压电层双侧设置质量负载的体声波谐振器、滤波器及电子设备
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Also Published As

Publication number Publication date
KR20060053994A (ko) 2006-05-22
CN1801614A (zh) 2006-07-12
JP5005903B2 (ja) 2012-08-22
TW200620820A (en) 2006-06-16
JP2006109472A (ja) 2006-04-20
GB0520078D0 (en) 2005-11-09
GB2418791A (en) 2006-04-05
CN1801614B (zh) 2010-06-16

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