TWI362727B - Window bga package and method for fabricating the same - Google Patents

Abstract

Disclosed are a window BGA package and a method for fabricating the same. The package primarily comprises a substrate, a chip, a die-attach material, a plurality of bonding wires electrically connecting the chip with the substrate, an encapsulant encapsulating the chip, and a plurality of external terminals below the substrate. The substrate has a die-attach dent on which the die-attach material is formed and a slot for the bonding wires passing through. The chip is aligned with the die-attach dent and disposed on the substrate. In the step of adhesive diffusion, the die-attach dent limits the spread shape of the die-attach material so that the die-attach material is filled in the gap between the sides of the chip and the peripheries of the die-attach dent. Accordingly, the package has a reduced thickness and can avoid crack and delamination at chip sides.

Description

1.362.727 IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a semiconductor device, and more particularly to a window type ball grid array package structure and a method of fabricating the same. [Prior technology]

In a package type of a small multi-semiconductor device, a window ball grid array structure (WBGA) is a slot in which a substrate for carrying a wafer is opened to facilitate a wire pass through the slot. The substrate and the wafer above it are electrically connected, and a solder ball external terminal is bonded under the substrate to make the window type ball grid array package structure electrically connectable. Once the wafer is adhered to the substrate by using a liquid or gel-bonded viscous material, the viscous material will have fluidity and overflow during the temperature rise and pressure application of the viscous crystal, and the viscous material will be covered by the flow of the viscous material. Wafer pads on the wafer can cause wire to be broken. Therefore, the current window type ball grid array package structure can only use the adhesive tape (tape) instead of the liquid or colloidal bonded crystal material to avoid overflow, but the cost is high. Moreover, the area where the wafer is bonded by the adhesive tape is only the active surface of the wafer and is flat, which is susceptible to stress and causes delamination or chipping on the side of the wafer, resulting in a f-type ball grid. The dependence and quality of the package structure are affected. Please refer to FIG. 1 ''A conventional window type ball grid array package structure 1 〇〇 mainly includes a substrate 110, a wafer 12 〇, a die bonding tape (1), a plurality of bonding wires 14 〇, a sealing body 15Q, and A plurality of external terminals 160. The substrate 110 has an inner surface iu, an outer surface 5 1362727 112, and a slot 114 extending through the inner surface 111 to the outer surface 112. The wafer 120 has an active surface 121 and a plurality of pads 1 24 on the active surface 112. The adhesive tape 130 is adhered to the active surface 121 of the wafer 120 and the inner surface in of the substrate 11

The wafer 120 is placed on the substrate 110. And exposed to the slot 114 after the adhesion. A passivation layer 125 is formed on the active surface 121 of the wafer 120. The bonding wires 140 pass through the slots 114 and electrically connect the pads 124 to the substrate 11A. The encapsulant 15 is used to seal the wafer 120 and the bonding wires 140. The external terminals ι6 are disposed on the outer surface 112 of the substrate 110. Referring to the enlarged view of FIG. 2, the adhesive layer 1300 is only partially adhered to the passivation layer of the active surface 1 2 1 of the wafer 1 2 ,, so the sealing process is The thermal stress generated in the thermal cycle test tends to cause delamination and peeling of the passivation layer 125 from the side of the wafer 120 or a problem of chipping on the sides of the wafer.

SUMMARY OF THE INVENTION In view of the above, the main object of the present invention is to provide a window array layout structure and a manufacturing method thereof, which can reduce the thickness of the entire package, and can effectively solve the traditional window type ball grid array package structure. The wafer surface creates delamination, peeling, or chipping on the sides of the wafer. The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. According to the invention, a window type ball grid array package structure mainly comprises a certain 曰匕 a 暴 a storm board first day film, a viscous material, a plurality of first bonding wires, a colloid and a plurality An external terminal.哕美6 1362727 The plate has an inner surface, an outer surface, a viscous β 曰 recess formed on the inner surface, and a slot through the outer surface to the viscous cavity Arranging on the inner surface of the substrate in alignment with the die recess, the first wafer has a first active surface, a first back surface, and a plurality of between the first active surface and the first back surface The side. The viscous material is formed in the viscous recess to adhere the first active surface of the first ridge sheet, and the viscous recess defines a shape of the viscous material to fill the viscous material a gap between the sides of the first wafer and the recessed edge of the die, and partially covering the sides of the first wafer. The first bonding wires pass through the slot and electrically connect the first wafer to the substrate. The encapsulation system is formed on the inner surface of the substrate and fills the slot to seal the first wafer and the first bonding wires. The external terminals are disposed on the outer surface of the substrate. The object of the present invention and solving the technical problems thereof can be further realized by the following technical measures. In the foregoing window type ball grid array package structure, the first wafer ', the port further has a passivation layer covering the first active surface, and the passivation layer is completely embedded in the die recess, so that The peripheral side edge of the passivation layer is sealed by the die bonding material. In the window type ball grid array package structure described above, the thickness of the viscous recess may be greater than the thickness of the viscous material and the passivation layer but less than the thickness of the wafer. The first wafer is partially embedded in the die-forming recess. In the foregoing window type ball grid array package structure, the edge of the die recess 7 1362727 may be located on the first crystal side. Outside of the sheet but in close proximity to the first wafer, in the aforementioned window type ball grid array a ^ ^ 傅 傅 &, the viscous material can diffuse into the slot. In the foregoing window type ball grid array j snagging structure, the viscous material material can seal the first bonding wires at one end of the first 曰 日 日 日 日 日 in the aforementioned window type ball grid array package structure In the first

The system may have a plurality of first pads formed on the first movement surface, which are aligned in the slots and provided by ^ _ b '. The joint of the first welding wire. In the aforementioned window type ball grid array, the substrate system may have a stepped notch, and the basin is formed on the outer surface and the side of the slot 0 in the aforementioned window type ball. The external terminals in the gate array seal structure may include a plurality of solder balls. In the foregoing window type ball grid array package structure, a second wafer may be further disposed on the first back surface of the first wafer and provided with a plurality of second pads in a back-to-back stacking manner. In the description of the articulated ball grid array package structure, a plurality of second bonding wires may be further included, which electrically connect the second pads to the substrate. In the aforementioned window type ball grid array package configuration, the encapsulation system can cover the first back side of the first wafer. The present invention also discloses the process of the window type ball grid array package structure. The main steps include: firstly, providing a substrate having an inner surface, an outer surface, and a die-forming recess formed on the inner surface 8 1362727 a slot extending through the outer surface to the die (4) and forming a die-forming material in the recess. Next, a first and a die plate are disposed, the first wafer is aligned with the die recess I temporarily (four) on the inner surface of the substrate, wherein the first wafer has a An active surface, the first active surface. After the temporary adhesion, the wires are formed into L: the first bonding wires, and the first bonding wires are passed through the slots and electrically connected to the first wafer to the substrate. Next, performing a die-diffusion step to apply pressure to the first wafer, the die-forming recess restricting the shape of the die-bonding material, so that the die-bonding material diffuses and fills the sides of the first wafer And a gap between the edge of the sticky edge and partially covering the sides of the first wafer. Thereafter, a colloid is formed on the inner surface of the substrate to fill the slot to seal the first wafer and the first bonding wires. Finally, a plurality of external terminals are disposed on the substrate. The outer surface 0, a younger brother, is called a long time in the side between the first active surface and the first back surface, wherein the viscous material is temporarily viscous a... The manufacturing method, the following advantages and effects: First, the use of the inner surface of the substrate to form a sticky crystal depression and - 曰 ^ ^ Λ 日 日 日 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部2. Filling the recesses with the first wafer by the die-bonding material and partially covering the side of the first wafer to provide a surface of the die to enhance the bond strength. 3. Sealing the peripheral side edge of the passivation layer of the first wafer by the die bonding material to reduce the stress of the first wafer, so as to avoid delamination of the wafer blunt 9 1362727 layer, and avoiding the The side of the first wafer is broken. 4. Sealing the first bonding wire at the first wafer end by the die bonding material to prevent the first bonding wires from being damaged or broken due to the mold flow during the sealing process. 5. The stepped notch of the substrate is lower than the outer surface of the substrate for the lower wire-bonding area 'the wire can be joined using a smaller wire diameter' to reduce the risk of wire exposure. [Embodiment] According to a first embodiment of the present invention, a window type ball-column package structure is illustrated in a cross-sectional view of Fig. 2. Referring to FIG. 2, the window type ball grid array package structure mainly comprises a substrate 21 〇, a first wafer 220, a die bond 230, a plurality of first bond wires 240, a gel body 250, and a complex external connection. Terminal 260. The substrate 210 has an inner surface 211, a surface 212, and a slotted hole 214' formed in the inner surface 211. The slot 214 extends through the outer surface 212 to the recess 213. The inner surface 211 is such that the substrate 21 is not exposed on one surface of the colloid 250 for providing the first wafer 22; the surface 212 is exposed on one surface of the encapsulant 250 for providing external terminals. The slot 214 can be a central slot, and a plurality of first pads 224 of the first wafer 220 are exposed and passed through the wire 240. In this embodiment, the substrate 210 is provided with a stepped notch 2 15 , which is formed on the outer surface 2 1 2 and generates an influence on the wire grid array 200 material and a plurality of layers. The outer surface of the sealing plate is disposed to show the side of the hole 2 14 of the groove 10 1362727 for reducing the body of the first bonding wire 240. As shown in FIG. 2, the substrate 210 is further provided. The outer surface 212 is externally connected to the pad 217 and a plurality of 216. More specifically, the first fingers 216 are formed into a notch 215 and can be arranged in the stepped notch 215 to be electrically connected by a bonding wire 240. The external pads 2 17 are generally ball pads. The external pads 2 17 can be arranged in a matrix or in multiple columns to engage the external terminals 260. The substrate 210 is a solder mask 218 formed on the outer surface 212 but having a pad 2 17 . In the present embodiment, the solder resist layer 2 18 is further provided with a finger 216 to form the stepped notch 215. Generally, the system is a circuit substrate, such as a printed circuit board or a ceramic base. As shown in FIG. 2, the first wafer 220 is provided on the inner surface 2 of the substrate 210 by the recess 213. The first wafer 220 has A first active surface 22 is first and a plurality of first active surface 22 1 and a side surface 2 2 3 of the first back surface. Specifically, the first wafer 2 2 is smaller than the die recess 2 1 3 , and the first wafer 220 is partially accommodated in the 2 1 3 with the surface 221 facing the substrate 210. The edge 2 丨 3 a of the viscous recess 2 1 3 is outside the alignable wafer 220 but adjacent to the sides of the first wafer 220. A slit S is formed on the side surface 223 and the viscous concave edge 2 1 Between 3 A. The first pads 224 formed on the first die 221 are aligned with the slots 214 π arc south. The plurality of first substrates are formed on the steps for the first circular rows of peripheral rows to additionally expose the first substrate 210. Between the back surface 222 222, the first active adhesive crystal is recessed in the active surface of one of the first surface 223 and the recess 213 for the first bonding wire 240 of 1362727. Engagement. In this embodiment, the pad 224 is located in a central region of the first active surface 221, and a pad 224 is a center pad. The first pads 224 are external electrodes of the integrated circuit inside the wafer 220, and the first materials may be Ming, copper or alloy. In the enlarged view of the embodiment, the first wafer 220 may further have a passivation layer 225 of the first active surface 221, wherein the passivation reveals the first pads 224. The passivation layer 225 is One of amine (PI, Poly imide), Benzocyclobutene, and lithium, which may include cerium oxide or cerium nitride. Referring to FIG. 2 again, the viscous material 2 3 is in the viscous recess 2 1 3 to adhere the 221 of the first wafer 22, and the viscous recess 213 restricts the viscous material 23 So that the die bonding material 230 fills the seam P between the 223 of the first wafer 220 and the edge 213a of the die recess 213 to cover the side faces 223 of the first wafer 220, and the die bonding material 23 The adhesion area is made and the die-bonded area is non-cutting, so that the first wafer 220 and the substrate can be strengthened. Preferably, the depth D of the die recess 2 1 3 is such that the material 23 总 is combined with the thickness of the passivation layer 225 but the thickness of the small crystal j 220 is such that the first wafer 22 is locally adhered to the θ. The depression is within 2 1 3, so the thickness of the entire package can be reduced. The thickness of the die-bonding material 230 means that the die-bonding material 23 is made of a first welding wire, that is, the first electrode pad 224 7 , such as the second layer covering the layer 22 5 from the poly-Asian BCB, the telluride is formed in the shape of the active surface, the side gaps S, to increase the mating surface (eg, the adhesion of u 2 1 0 is greater than the adhesion of the first embedded in the Preferably, the passivation layer 225 of the first wafer 220 is completely embedded in the die recess 21 1 3 to make the passivation layer. The peripheral side edge of 225 is sealed by the die bonding material 23 to prevent the passivation layer 225 from being layered or peeled off from the first wafer 22. The die bonding material 230 may be a B-stage adhesive. A multi-stage curing characteristic is provided to adjust the covering effect on the side faces 223 of the first cymbal sheet 220. Referring to FIG. 2 again, the first bonding wires 240 pass through the slot 214 and are electrically charged. The first squeezing 2 24 of the first wafer 220 is connected to the first fingers 2 1 6 of the substrate 2 1 An electrical interconnection between the first wafer 220 and the substrate 210. The first filaments 240 may be formed by wire bonding, and the first bonding wires 240 may be made of gold or copper. Since the first fingers 2丨6 are located in the stepped notch 215, the substrate 210 and the first wafer 22〇 have a shorter wire height difference, and the arc height of the first bonding wires 240 is lowered. Therefore, the wire bonding can be achieved by using a thin wire bonding wire. Please refer to FIG. 2 again, the die bonding material 230 can be more diffused into the slot 214. Preferably, the die bonding material 230 is bonded. Diffusion can further seal the first bonding wires 240 at one end of the first wafer 22 to prevent the wire and the wire from being broken. Referring to FIG. 2, the sealing body 25 is formed on the substrate 2 The inner surface 211 of the first surface 211 is filled with the slot 214 to seal the first wafer 220 and the first bonding wires 24 〇. In this embodiment, the sealing body 250 can cover the first surface. a first back surface of the wafer 2 2 2 2 2 13 13362727 In various embodiments, the stylus colloid 250 can reveal the first wafer 220 A back surface 222 is used to describe the heat dissipation effect (not shown). Please refer to FIG. 2 for the spear #下下. The external terminals 260 are disposed on the substrate 212 of the substrate 210. The external pads 217 are used as the window type ball grid array to encapsulate the input and/or output ' of the structure 200 to form electrical properties with external devices (eg, ice p1, 卩 printed circuit boards). The external terminals 26n and 00 00 may comprise a plurality of solder balls, metal balls, solder pastes, contact pads or contact pins.

Therefore, the design of the dot recess 322 i 3 effectively controls the diffusion of the die crystal of the die bond material 230 to partially cover the sides Φ 223 of the first wafer 22 to effectively increase the die area and change to a non- The planar die-bonding region can reduce the thickness of the entire package and enhance the bond strength, so as to prevent the passivation layer 225 from being delaminated from the first wafer 22, and avoiding the side faces 223 of the first wafer 220. Fragmentation damage. In addition, the die-bonding material 2 3 3 is controlled to not diffuse to the edge of the substrate 21 0 by the die-forming recess 2 1 3 so that the sealant 25 can completely seal the die-bonding material 23 0, ensuring good water. Gas resistance. More preferably, the die bonding material 230 can seal the first bonding wires 240 at one end of the first wafer 220 to prevent the first bonding wires 24 from being damaged by the mold flow during the sealing process. Or the problem of disconnection. The present invention further illustrates a manufacturing method of the window type ball grid array sealing structure as exemplified in the manufacturing flow block diagram of Fig. 3 and the cross-sectional view of the components in the processes of Figs. 4-8E. Referring to FIG. 3, the process of the window type ball grid array 1 1 structure 1362727 mainly includes the following steps: Step 1 of "providing the substrate", "Step 2", "Electrical connection" step 3. "Crystal Diffusion" Step 4, "Forming the Encapsulant" Step 5 and "Setting the External Terminal" Step 6' and the following description with reference to Figures 4A to 4E. • First, perform the steps丨. As shown in FIG. 4A, the substrate 210 is provided. The inner surface 211 of the substrate 210 has been formed with the die-shaped recess 213 and the slot 2 1 4 , and the slot 2 1 4 extends through the outer surface 2 丨 2 The viscous material 230 is formed in the viscous recess 2 2 3 and in the viscous recess 2 丨 3 . Wherein, the bottom surface of the viscous recess 213 may not be provided with a circuit layer, so that the internal structure of the substrate 2 1 不会 is not damaged when the viscous recess 2 1 3 is mechanically formed. Preferably, the viscous material 2 3 lanthanide can be a multi-stage k-cured colloidal colloid. When formed on the substrate 2, the viscous material 230 has better fluidity, so A mode of screen printing or stencil printing is formed in the die-forming recess 213. The die-bonding material 23 does not fill the die-forming recess 2 1 3 to reveal the slot 2丨4. The die bond material 23 can be coplanar or slightly higher than the inner surface 211 of the substrate 210. The first fingers 216 of the substrate 210 and the external pads 217 are in the same line. Floor. The substrate 21A may further have a solder resist layer 218 formed on the outer surface 212. The solder resist layer 218 further exposes the outer turns 217'. The solder resist layer 218 can further form a stepped notch 215 to expose the first fingers 2 16 . Then go to step 2. As shown in FIG. 4B, the first wafer 22 is aligned with the die recess 213 by the adhesion of the die bonding material 230, and is adhered to the inner surface 2 of the substrate 210. The first wafer is slightly embedded in the viscous recess 2 1 3 and causes the viscous material 23 to collapse. Excessive deformation does not change the overflow range. The first bonding pad 224 of the first wafer 220 is temporarily aligned with the first bonding surface of the first wafer 220. The first bonding pad 224 of the first wafer 220 is aligned in the slot. Specifically, in step 2, the substrate 21 is pre-baked so that the adhesive material 30 0 is semi-cured at room temperature and has a heat-bonding adhesion > ' for adhering the first wafer 22 〇. At this time, the viscosity of the die-bonding material 230 is adjusted to be low in fluidity, so that the die-shaped material is not easily collapsed, and the flow of the die-bonding material 230 is prevented from covering the first pads 224, thereby failing to wire. problem. Then, go to step 3. As shown in FIG. 4C, the first bonding wires 24 are formed by the wires, and the first pads 224 of the first wafer 22 are electrically connected to the substrate 210. These are the first fingers 216. Then, step 4 is performed. As shown in Fig. 4D, the first wafer 22 is applied by heating and pressing to diffuse the die bonding material 23, and the first wafer 220 is more embedded in the die recess 213. The heating temperature and pressure system in this step should be higher than the known conditions in the "temporary viscous crystal" step 2. Each of the 曰 ... ^ 220 220 220 220 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The die bond material 22. The side faces 223"V and fills the first wafer-like wafer as shown in Fig. 2. The gap S between the edges of the sticky sunday recess 213 (as shown in Fig. 2) is more complex. A wafer 22 of the 16 1362727 side faces 223 ° is not deformed due to the formation of the first bonding wires 240 because the die bonding material 230 is formed, so even if the die bonding material 230 is produced to the first bonding wire 240 It will not cause the problem of inability to wire, and even help to fix the first wire 240. For example, in the step, the child bonding material 230 # can be more diffused into the slot 2 1 4 The one end of the first bonding wire 240 can be coated with the end of the first bonding wire 240. After the curing, the material can be fixed and sealed to the end of the first wire 2 to avoid the subsequent sealing process. In the present embodiment, the curing of the die bonding material 230 can be performed on the die bond, the diffusion step 4 is performed simultaneously or after the die diffusion step 4, or in the step 5, in addition, please refer to 2 and 3, more specifically, in the die diffusion step 4, the passivation layer 225 of the first wafer 220 is completely embedded in the paste. The recess is 2丨3 so that the peripheral side edge of the passivation layer 225 is sealed by the die bonding material 23. Then 'Step 5 is performed. As shown in FIG. 4E, the seal is formed by transfer molding technique. The colloid 250 is formed on the inner surface 2 of the substrate 210 and fills the slot 214 to seal the first wafer 22 and the first bonding wires 24 . The viscous recess 2 1 3 can limit the shape of the adhesive material 2 3 ,, and does not spread to the periphery of the s-substrate 210, so the sealant 25 〇 can completely seal the viscous material 23 0. Finally, step 6 is performed. The external terminals 260 can be disposed on the external pads 217 by reflow soldering to form a window type ball grid array package structure 2 as shown in Fig. 2. In various embodiments, the window type The manufacturing method of the ball grid array package structure 可 17 1*362727 further includes a setting step of a second wafer (not shown), and the second wafer is disposed on the first wafer 22 in a back stacking manner. On the back side 222. According to the second embodiment of the present invention, another window type The column package structure is illustrated in the cross-sectional view of FIG. 5, and its architecture is the same as that of the first embodiment, but can be stacked more. Please refer to FIG. 5 for the day-to-day gate. The window type ball grid array package structure mainly includes a substrate 310, a first wafer 320, a die bond 3 3 , a plurality of first bond wires 341, a gel 35 〇 and a complex external terminal 360. The substrate 310 has an inner surface 311, a surface 312, and a A die-forming recess 313 is formed in the inner surface 311 - a slot 3 1 4 , and the slot 3 14 extends through the outer surface 3 丨 2 to the recess 313 . The substrate 310 may have a stepped notch 315 formed on the side of the outer surface 31 and the slot 3 1 4 . In this example, the outer surface 3 1 2 is formed on the two sides of the stepped notch 3 1 5 with a plurality of first fingers 316, and the inner surface 311 can be formed with a plurality of the outer surface of the adhesive layer 3 1 3 The second finger is 3丨9. The 301 may be a multi-layer printed circuit board, such that the second fingers 319 of the first fingers 31 are electrically connected to the plurality of pads 317 of the outer surface 312. The first wafer 306 is disposed on the inner surface 311 of the substrate 310. The first wafer has a first active surface 321 , a first back surface 322 , and a reticle 323 between the first active surface 321 and the first back surface 322. s Qing refers to Figure 5, which does not. The viscous material 330 forms a plurality of outer and first slabs of the first spheroidal material, and a plurality of viscous crystals. The implementation of the opaque substrate 6 and the outer 3 and 320 The first active surface 3 1 1 of the first wafer 320 is adhered to the surface of the 18 1362727 viscous recess 3 1 3 , and the viscous recess 3 3 3 limits the shape of the viscous material 330 The viscous material 33 0 is filled into the gap between the side faces 3 2 3 of the first wafer 320 and the edge 3 1 3 A of the die recess 3 1 3 to partially cover the first die 320 The side surfaces 323 are partially embedded in the die recesses 31 to reduce the thickness of the entire package. Referring to FIG. 5, the first wafer 320 can have a plurality of first pads 324 formed on the first active surface 321 which are aligned in the slots 31. The first bonding wires 314 are passed through the slots 3 1 4 and electrically connected to the first pads 324 of the first wafer 320 to the first fingers 316 of the substrate 310. In this embodiment, the window type ball grid array package structure 300 may further include a second wafer 370 having a second active surface 371 and an opposite second back surface 372. The back-to-back stacking manner is disposed on the first back surface 322 of the first wafer 320, that is, the second back surface 720 of the second wafer 370 is attached to the first back surface 322 of the first wafer 320, so that the first The two active faces 371 are upwards. The second wafer 370 further has a plurality of second pads 374 formed on the second active surface 371. In this embodiment, the second wafer 370 and the first wafer 306 can be substantially the same wafer, for example, the wafer size, the electrical function and the pad arrangement position are the same, so the second pads 374 It is also a central solder pad, which can reduce the type of wafer to reduce the manufacturing cost and management cost of the wafer. Electrically interconnecting the second pads 370 to the substrate 310 by electrically connecting the second pads 19 1362727 374 to the second contacts 319 of the substrate 310. The encapsulant 35 is formed on the inner surface 311 of the substrate 310 and fills the slot 314 to seal the first wafer 320, the second wafer 370, the first bonding wires 341 and the first Second weld line 342. The external terminals 36 are disposed on the outer pads 3 1 2 of the outer surface 3 1 2 of the substrate 310 for external bonding.

The die-forming recess 3 13 is used to limit the shape of the die-bonding material 33, so that the die-bonding material 310 extends and partially covers the side faces 323 of the first wafer 320 without overflowing the substrate. 31周边 The periphery of the inner surface 3 1 1 'to avoid overflowing the second fingers 3 1 9 , so the window type ball grid array package structure 3 〇〇 does not need to allow glue on the inner surface 3 ΐ The error, thereby reducing the size of the entire package. Therefore, the port I ball grid array package structure 3 〇〇 not only has the entire package reduced

The thickness and enhanced bond strength to avoid delamination of the wafer can reduce the size of the entire package. In the above, only the preferred embodiment of the present invention is not limited to the present invention. Any technical scope of the present invention is stipulated in the appended patent application. Any person skilled in the art can make a few changes or modify the equivalent embodiments by using the above-mentioned technical content, and the present invention does not deviate from the technical solution of the present invention. It is still within the scope of the technical scope of the present invention to make any modifications to the above embodiments, and equivalent changes to the above-mentioned embodiments. The figure 20 is a conventional window type ball grid array package structure and a partially enlarged surface view thereof. 1 is a partially enlarged cross-sectional schematic view showing a window type ball grid array package structure and its features in accordance with a first embodiment of the present invention. 3 is a block diagram showing the main flow of the process of the window type ball grid array package structure according to the first embodiment of the present invention. 4a to 4E are schematic cross-sectional views showing the components in the process of the gate-type ball grid array package structure in accordance with the first embodiment of the present invention. Figure 5 is a cross-sectional view showing another window type ball thumb array package structure in accordance with a second embodiment of the present invention. & description of the component symbol] The gap between the side of the a-thick film and the edge of the viscous recessed surface, the depth of the viscous crystal recess and the thickness of the passivation layer provide the step of the substrate, the step of temporarily bonding the crystal Step of the step of forming the sealant to form the sealant. Step of setting the external terminal.

110 substrate 111 inner surface 112 114 slot 12 0 wafer 121 active surface 124 125 passivation layer 130 adhesive tape 140 150 sealant 160 external terminal 200 window type ball grid array package structure 2 1 0 substrate 211 inner surface 212 2 13 die crystal Recess 2 13 A edge 214 slot 215 stepped notch 2 1 6 first finger 217 outer pad 218 220 first wafer 221 first main 'moving surface 222 2 2 3 side 224 first fresh 塾225 2 3 0 Material 240 first bonding wire 250 260 external terminal 300 window type ball grid array package structure 310 substrate 3 11 inner surface 312 3 13 sticky crystal recess 313A edge 3 14 slot 3 1 5 stepped notch 316 first finger 320 first Wafer 3 23 side 3 3 0 adhesive material 3 1 7 external 塾 32 1 first active surface 324 first solder 341 first bonding wire 3 19 322 342 outer surface soldering wire outer surface solder mask first passivation Layer seal outer surface second finger first back second bond wire 350 sealant 360 external terminal 370 second wafer 371 second active surface 372 second back surface 22 1362727 374 second solder pad

Claims (1)

1362727 X. Patent application scope: Μ年z月7月曰 Revised--·., 1 1. A ό-type ball grid array package structure, comprising: - the substrate 'has an inner surface, an outer surface, a die-forming recess on the inner surface and a slot extending through the outer surface to the die-forming recess; a first wafer disposed on the inner surface of the substrate in alignment with the die-forming recess; The first wafer has a first active surface, a first back surface, and a plurality of sides between the first active surface and the first back surface; a die-bonding material is formed in the die-forming recess to adhere The first active surface of the first wafer is connected to the shape of the die-bonding material. The viscous coffin is filled into the gap between the side of the stomach of the first wafer and the edge of the viscous recess, and partially covers the sides of the first wafer; a plurality of first bonding wires are threaded through Passing through the slot and electrically connecting the first wafer to the substrate; the encapsulant is formed on the inner surface of the substrate and filling the slot to seal the first wafer and the first bonding wires And a plurality of external terminals are disposed on the outer surface of the substrate; wherein the first wafer has a purification layer covering the first active surface, the passivation layer is completely embedded in the die recess, The peripheral side edge of the passivation layer is sealed by the die bonding material. 2. The window type ball grid array package structure of claim 2, wherein the depth of the viscous recess is greater than a thickness of the viscous material and the passivation layer but less than a thickness of the first wafer, The first 曰 24 1362727 3 ' 4, 5 ' 6, 7, 8, 9, and the fading system are partially embedded in the viscous recess. The edge ball grid array is sealed as described in claim 1 wherein the edge of the die-shaped recess is located on the side of the first wafer adjacent to the first wafer. Immediately as described in claim 1 of the patent application, the die-shaped ball grid array is encapsulated '/, and the die-bonding material is more diffused into the slot. The window type ball grid array package according to item 4 of the patent application scope of the present invention, wherein the die bonding material system further seals the plurality of bonding wires at one end of the cymbal sheet. A window type ball grid array according to the above-mentioned claim, wherein the first wafer system has a plurality of first pads formed on the first main gate, which are aligned in the slots For the joining of the first =. The 綷 line is as described in (4) (4) (4) Grid array, wherein the substrate has a stepped notch formed on the surface and the side of the slot. x As claimed in the scope of the patent application The window type ball grid array is encapsulated, wherein the external terminals comprise a plurality of solder balls. The window type ball grid array according to the scope of claim 2, further comprising a second crystal 4 The back-to-back stacking method is disposed on the first back surface of the first wafer and has a plurality of second solder pads. The window type ball grid array package structure as described in claim 9 further includes a plurality of second solders. The wire is electrically connected to the substrate: ~ ^ - Han pad to the substrate. 25 10 11. As claimed in the first paragraph, the package structure 12 _ (4) The glue system covers the first-back side of the U-th. - (4) mouth-shaped ball grid (four) material structure manufacturing method the following steps: | contains the outer surface material; the trapping and temporary system has an active surface and a time-adhesive connection to provide a substrate, which has - Surface, outer surface, inner surface a die-forming recess and a slot, the slot penetrates into the die-forming recess, and a die-forming device is formed in the die-forming recess - the first wafer is aligned with the die-bonded paste On the inner surface of the substrate, wherein the first wafer first active surface, a first first surface, and a plurality of sides between the first and the first moon surface, wherein the die bonding material is temporary to the first wafer The first active surface; forming a plurality of first bonding wires through the slot and electrically discharging the first wafer to the substrate; performing a die diffusion step to apply pressure to the first wafer, the die bonding The recesses limit the shape of the die-bonding material such that the die-bonding material diffuses and fills a gap between the sides of the first wafer and the edge of the die-forming recess, and partially covers the first wafer a side surface, wherein the first wafer system further has a passivation layer covering the first active surface, and in the die diffusion step, the passivation layer is completely embedded in the die hole recess to make the passivation layer The peripheral side edges are sealed by the die-bonding material; forming a colloid Forming on the inner surface of the substrate and filling the slot to seal the first wafer and the first bonding wires; and providing a plurality of external terminals disposed on the outer surface of the substrate. Ϊ 362727 】 3, such as _ please patent 蔚 R # 造造一方, 苐12 items of the window type ball grid array package material and the: layer method: the depth of the viscous recess is greater than the Li Jing material makes the flute _ 总 总 但 但 但 但 但 但 但 总 总 总 总 总 总 总 总 总 总 总 总 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 窗口 窗口 窗口 窗口 窗口 窗口 窗口 专利 窗口 窗口 专利 专利 窗口The manufacturing method of the seal, wherein the edge of the viscous depression is located outside the first slab but adjacent to the sides of the first wafer. aa 15. The window described in Item 12 of Patent 11 A method of manufacturing a ball grid array package, in which the material is more diffused into the slot. The method of manufacturing a window type ball grid array package according to claim 15, wherein the die bonding material further seals the ends of the first wafer. The manufacturing method of the window type ball grid array package structure according to claim 12, wherein the first wafer system has a plurality of formations: a first-welding potential of the first-active surface, which is a pair In the slot, the first bonding wire is bonded. The manufacturing method of the window type ball grid array sealing according to claim 12 of the patent application's further includes the steps of: stacking back to back A second wafer is disposed on the first back surface of the first wafer.