TWI348498B - - Google Patents

Info

Publication number
TWI348498B
TWI348498B TW098120053A TW98120053A TWI348498B TW I348498 B TWI348498 B TW I348498B TW 098120053 A TW098120053 A TW 098120053A TW 98120053 A TW98120053 A TW 98120053A TW I348498 B TWI348498 B TW I348498B
Authority
TW
Taiwan
Application number
TW098120053A
Other versions
TW201009101A (en
Inventor
Satoshi Sugawara
Yasuhiro Enami
Kazuki Takahashi
Susumu Kumagawa
Yousong Jiang
Ichiro Shiono
Yoshihiro Takasaka
Original Assignee
Shincron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Publication of TW201009101A publication Critical patent/TW201009101A/zh
Application granted granted Critical
Publication of TWI348498B publication Critical patent/TWI348498B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3435Applying energy to the substrate during sputtering
    • C23C14/345Applying energy to the substrate during sputtering using substrate bias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • H01J37/32706Polarising the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW098120053A 2008-06-17 2009-06-16 Bias sputtering apparatus TW201009101A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008157879 2008-06-17

Publications (2)

Publication Number Publication Date
TW201009101A TW201009101A (en) 2010-03-01
TWI348498B true TWI348498B (zh) 2011-09-11

Family

ID=41434112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098120053A TW201009101A (en) 2008-06-17 2009-06-16 Bias sputtering apparatus

Country Status (8)

Country Link
US (1) US20110100806A1 (zh)
EP (1) EP2302092B1 (zh)
JP (1) JP4503702B2 (zh)
KR (1) KR101036426B1 (zh)
CN (1) CN102066602B (zh)
HK (1) HK1153242A1 (zh)
TW (1) TW201009101A (zh)
WO (1) WO2009154196A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013147677A (ja) * 2010-04-28 2013-08-01 Ulvac Japan Ltd 成膜装置
US10077207B2 (en) * 2011-11-30 2018-09-18 Corning Incorporated Optical coating method, apparatus and product
JP5939147B2 (ja) * 2012-12-14 2016-06-22 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法
JP5727073B1 (ja) * 2014-06-03 2015-06-03 株式会社シンクロン 可搬型回転装置及び成膜装置
JP6019310B1 (ja) * 2015-04-16 2016-11-02 ナルックス株式会社 蒸着装置及び蒸着装置による成膜工程を含む製造方法
JP6533511B2 (ja) * 2015-06-17 2019-06-19 株式会社シンクロン 成膜方法及び成膜装置
CN110857464A (zh) * 2018-08-24 2020-03-03 安徽纯源镀膜科技有限公司 一种新的真空镀膜设备的偏压系统
JP6845877B2 (ja) * 2019-02-14 2021-03-24 Towa株式会社 ワーク保持部回転ユニット及び真空処理装置
EP3987079A4 (en) 2019-06-24 2023-03-01 TRUMPF Huettinger Sp. Z o. o. PROCEDURE FOR ADJUSTING THE POWER OUTPUT OF A POWER SUPPLY FOR A PLASMA, PLASMA DEVICE AND POWER SUPPLY
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法
WO2022259368A1 (ja) * 2021-06-08 2022-12-15 株式会社シンクロン バイアス印加装置
CN117626201A (zh) * 2023-12-01 2024-03-01 科廷表面科技(浙江)有限公司 一种dlc溅射等离子涂层工艺及涂层装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4893019A (en) * 1987-05-27 1990-01-09 Mitsubishi Denki Kabushiki Kaisha Ion current generator system for thin film formation, ion implantation, etching and sputtering
JPH0791645B2 (ja) * 1989-04-28 1995-10-04 株式会社日立製作所 薄膜形成装置
JPH04305081A (ja) * 1991-04-02 1992-10-28 Hitachi Metals Ltd セラミックス材料のメタライズ処理装置
JP3378043B2 (ja) * 1993-03-05 2003-02-17 同和鉱業株式会社 スパッタリング装置
JP3745790B2 (ja) * 1995-05-15 2006-02-15 株式会社デンソー 光情報記録媒体の製造装置及び製造方法
JP2002293427A (ja) 2001-03-29 2002-10-09 Sumitomo Electric Ind Ltd 回転台車
EP1419285A4 (en) * 2001-08-24 2009-08-19 Nanonexus Inc METHOD AND DEVICE FOR GENERATING UNIFORM ISOTROPIC VOLTAGES IN A SPOTTED FILM
JP2007051337A (ja) * 2005-08-18 2007-03-01 Ulvac Japan Ltd スパッタ電極及びスパッタ電極を備えたスパッタリング装置
CN100477147C (zh) * 2006-03-16 2009-04-08 东京毅力科创株式会社 基板载置台及基板处理装置

Also Published As

Publication number Publication date
JP4503702B2 (ja) 2010-07-14
CN102066602B (zh) 2012-10-31
KR101036426B1 (ko) 2011-05-23
KR20110014657A (ko) 2011-02-11
EP2302092A4 (en) 2014-05-14
WO2009154196A1 (ja) 2009-12-23
EP2302092B1 (en) 2015-12-23
TW201009101A (en) 2010-03-01
HK1153242A1 (en) 2012-03-23
CN102066602A (zh) 2011-05-18
US20110100806A1 (en) 2011-05-05
JPWO2009154196A1 (ja) 2011-12-01
EP2302092A1 (en) 2011-03-30

Similar Documents

Publication Publication Date Title
BR112016019572A2 (zh)
BRPI0909040A2 (zh)
BRPI0908549B8 (zh)
BRPI0918697A2 (zh)
BRPI0917525A2 (zh)
BRPI0920750A2 (zh)
BRPI0919470A2 (zh)
BRPI0922455A2 (zh)
BRPI0907698A2 (zh)
BRPI0923734A2 (zh)
BRPI0908285A2 (zh)
BRPI0922669A2 (zh)
BRPI0908120A2 (zh)
BRPI0915616A2 (zh)
BRPI0904541A8 (zh)
BRPI0919811A2 (zh)
BRPI0920914A2 (zh)
BRPI0922550A2 (zh)
BRPI0916284A2 (zh)
TWI348498B (zh)
CH2352018H2 (zh)
AR073287B1 (zh)
BRPI0919477A2 (zh)
BRPI0923127A (zh)
BRPI0923137A2 (zh)