TWI347496B - Lithographic device, and method - Google Patents
Lithographic device, and methodInfo
- Publication number
- TWI347496B TWI347496B TW095121140A TW95121140A TWI347496B TW I347496 B TWI347496 B TW I347496B TW 095121140 A TW095121140 A TW 095121140A TW 95121140 A TW95121140 A TW 95121140A TW I347496 B TWI347496 B TW I347496B
- Authority
- TW
- Taiwan
- Prior art keywords
- lithographic device
- lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
- G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68980005P | 2005-06-13 | 2005-06-13 | |
US11/361,049 US20060203221A1 (en) | 2005-02-25 | 2006-02-24 | Lithographic apparatus and a method for determining a polarization property |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710589A TW200710589A (en) | 2007-03-16 |
TWI347496B true TWI347496B (en) | 2011-08-21 |
Family
ID=39898983
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095121143A TW200710592A (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
TW095121140A TWI347496B (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
TW095121141A TWI352878B (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
TW095121142A TW200710591A (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095121143A TW200710592A (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095121141A TWI352878B (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
TW095121142A TW200710591A (en) | 2005-06-13 | 2006-06-13 | Lithographic device, and method |
Country Status (4)
Country | Link |
---|---|
US (3) | US20100045956A1 (zh) |
JP (4) | JP4739411B2 (zh) |
CN (4) | CN101233454B (zh) |
TW (4) | TW200710592A (zh) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7375799B2 (en) * | 2005-02-25 | 2008-05-20 | Asml Netherlands B.V. | Lithographic apparatus |
JP4739411B2 (ja) * | 2005-06-13 | 2011-08-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影システムおよび投影レンズ偏光センサ |
JP4976670B2 (ja) * | 2005-08-24 | 2012-07-18 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
CN102067040B (zh) | 2008-06-26 | 2013-05-08 | Asml荷兰有限公司 | 重叠测量设备、光刻设备和使用这种重叠测量设备的器件制造方法 |
DE102009015393B3 (de) | 2009-03-20 | 2010-09-02 | Carl Zeiss Smt Ag | Messverfahren und Messsystem zur Messung der Doppelbrechung |
NL2005259A (en) * | 2009-09-29 | 2011-03-30 | Asml Netherlands Bv | Imprint lithography. |
NL2005738A (en) * | 2009-12-15 | 2011-06-16 | Asml Holding Nv | Improved polarization designs for lithographic apparatus. |
DE102010001336B3 (de) * | 2010-01-28 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems |
NL2005997A (en) * | 2010-02-19 | 2011-08-22 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
DE102012203944A1 (de) | 2012-03-14 | 2013-10-02 | Carl Zeiss Smt Gmbh | Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage |
US10215642B2 (en) * | 2012-05-17 | 2019-02-26 | The University Of Akron | System and method for polarimetric wavelet fractal detection and imaging |
TWI562638B (en) * | 2012-07-25 | 2016-12-11 | Chiun Mai Comm Systems Inc | System and method for projection |
JP6038619B2 (ja) * | 2012-12-04 | 2016-12-07 | 株式会社日立エルジーデータストレージ | 偏光感受型光計測装置 |
FR3000211B1 (fr) * | 2012-12-20 | 2015-12-11 | Commissariat Energie Atomique | Dispositif d'eclairage par balayage , dispositif d'imagerie le comportant et procede de mise en oeurvre |
DE102013200961A1 (de) * | 2013-01-22 | 2014-07-24 | Carl Zeiss Smt Gmbh | Polarisationsmessvorrichtung für eine Projektionsbelichtungsanlage |
CN103105146B (zh) * | 2013-01-22 | 2015-10-14 | 福州大学 | 用于三维显示的柱透镜光栅的平整性检测方法 |
US9995850B2 (en) | 2013-06-06 | 2018-06-12 | Kla-Tencor Corporation | System, method and apparatus for polarization control |
JP2015089055A (ja) * | 2013-11-01 | 2015-05-07 | セイコーエプソン株式会社 | 光学モジュールおよび原子発振器 |
CN103698015B (zh) * | 2014-01-06 | 2015-10-14 | 清华大学深圳研究生院 | 偏振检测仪及检测方法 |
CN103792798B (zh) * | 2014-01-28 | 2015-10-28 | 中国科学院上海光学精密机械研究所 | 光刻机偏振照明系统光瞳偏振态测量装置及其测试方法 |
DE102014205406A1 (de) * | 2014-03-24 | 2015-09-24 | Carl Zeiss Smt Gmbh | Messvorrichtung zum Bestimmen eines Polarisationsparameters |
CN107429993B (zh) * | 2015-01-29 | 2021-06-15 | 新加坡恒立私人有限公司 | 用于产生图案化照明的装置 |
DE102015106041B4 (de) * | 2015-04-20 | 2023-01-19 | Rodenstock Gmbh | Verfahren zur Kalibrierung einer Polarisationsachsenmessvorrichtung sowie Verfahren zur Bestimmung von Polarisationsachsen von Brillengläsern |
TWI548875B (zh) * | 2015-06-11 | 2016-09-11 | Landrex Technologies Co Ltd | Optical needle detection system and method |
EP3368279B1 (en) * | 2015-10-30 | 2022-10-19 | Seurat Technologies, Inc. | Part manipulation using printed manipulation points |
JP6700932B2 (ja) | 2016-04-20 | 2020-05-27 | キヤノン株式会社 | 検出装置、検出方法、プログラム、リソグラフィ装置、および物品製造方法 |
WO2020074238A1 (en) * | 2018-10-11 | 2020-04-16 | Asml Netherlands B.V. | Multi-source illumination unit and method of operating the same |
US10942135B2 (en) | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
US10948423B2 (en) | 2019-02-17 | 2021-03-16 | Kla Corporation | Sensitive particle detection with spatially-varying polarization rotator and polarizer |
CN113557477B (zh) * | 2019-03-13 | 2024-07-02 | Asml控股股份有限公司 | 光刻设备、量测设备、光学系统和方法 |
CN112394620B (zh) * | 2019-08-16 | 2022-04-01 | 上海微电子装备(集团)股份有限公司 | 测量装置和光刻机 |
CN112880987B (zh) * | 2019-11-29 | 2022-05-03 | 上海微电子装备(集团)股份有限公司 | 光学元件的偏振性能检测方法及检测系统 |
KR20210089949A (ko) | 2020-01-09 | 2021-07-19 | 삼성전자주식회사 | 극자외선 광원의 레이저 빔 딜리버리 장치 |
US11774866B2 (en) * | 2020-09-03 | 2023-10-03 | Kla Corporation | Active reticle carrier for in situ stage correction |
CN113281256B (zh) * | 2021-05-31 | 2022-06-03 | 中国科学院长春光学精密机械与物理研究所 | 穆勒矩阵测量装置及其测量方法 |
CN117250832B (zh) * | 2023-11-15 | 2024-02-23 | 福建安芯半导体科技有限公司 | 一种精密定位平台及光刻机 |
CN118654764A (zh) * | 2024-08-12 | 2024-09-17 | 长春理工大学 | 基于约简泽尼克分解的穆勒瞳的定量分析方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4575247A (en) * | 1984-07-02 | 1986-03-11 | Rockwell International Corporation | Phase-measuring interferometer |
JPH0652708B2 (ja) * | 1984-11-01 | 1994-07-06 | 株式会社ニコン | 投影光学装置 |
JPH0618332A (ja) * | 1992-07-01 | 1994-01-25 | Kokusai Denshin Denwa Co Ltd <Kdd> | ストークス・パラメータ測定方法及び装置 |
FR2755254B1 (fr) * | 1996-10-25 | 1999-01-15 | Centre Nat Rech Scient | Composant optique de modulation, polarimetre et ellipsometre de mueller comprenant un tel composant optique, procede de calibrage de cet ellipsometre et procede de mesure ellipsometrique |
JP4065923B2 (ja) * | 1998-09-29 | 2008-03-26 | 株式会社ニコン | 照明装置及び該照明装置を備えた投影露光装置、該照明装置による投影露光方法、及び該投影露光装置の調整方法 |
DE10119284A1 (de) * | 2001-04-20 | 2002-10-24 | Philips Corp Intellectual Pty | Verfahren und System zum Training von jeweils genau einer Realisierungsvariante eines Inventarmusters zugeordneten Parametern eines Mustererkennungssystems |
JP3689681B2 (ja) * | 2002-05-10 | 2005-08-31 | キヤノン株式会社 | 測定装置及びそれを有する装置群 |
JP2004061515A (ja) * | 2002-07-29 | 2004-02-26 | Cark Zeiss Smt Ag | 光学系による偏光状態への影響を決定する方法及び装置と、分析装置 |
JP4189724B2 (ja) * | 2002-09-09 | 2008-12-03 | 株式会社ニコン | 露光装置および露光方法 |
US7289223B2 (en) * | 2003-01-31 | 2007-10-30 | Carl Zeiss Smt Ag | Method and apparatus for spatially resolved polarimetry |
EP1467253A1 (en) * | 2003-04-07 | 2004-10-13 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005005521A (ja) * | 2003-06-12 | 2005-01-06 | Nikon Corp | 露光装置、露光方法、および偏光状態測定装置 |
US7408616B2 (en) * | 2003-09-26 | 2008-08-05 | Carl Zeiss Smt Ag | Microlithographic exposure method as well as a projection exposure system for carrying out the method |
ATE396428T1 (de) * | 2003-09-26 | 2008-06-15 | Zeiss Carl Smt Ag | Belichtungsverfahren sowie projektions- belichtungssystem zur ausführung des verfahrens |
JP3971363B2 (ja) * | 2003-10-07 | 2007-09-05 | 株式会社東芝 | 露光装置及び露光装置の光学系のミュラー行列を測定する方法 |
JP3718511B2 (ja) * | 2003-10-07 | 2005-11-24 | 株式会社東芝 | 露光装置検査用マスク、露光装置検査方法及び露光装置 |
TW201809727A (zh) * | 2004-02-06 | 2018-03-16 | 日商尼康股份有限公司 | 偏光變換元件 |
KR101193830B1 (ko) * | 2004-08-09 | 2012-10-23 | 가부시키가이샤 니콘 | 광학 특성 계측 장치 및 광학 특성 계측 방법, 노광 장치및 노광 방법, 그리고 디바이스 제조 방법 |
JP2006179660A (ja) * | 2004-12-22 | 2006-07-06 | Nikon Corp | 偏光測定装置、偏光測定方法、露光装置、および露光方法 |
US7405436B2 (en) * | 2005-01-05 | 2008-07-29 | International Business Machines Corporation | Stressed field effect transistors on hybrid orientation substrate |
WO2006078843A1 (en) * | 2005-01-19 | 2006-07-27 | Litel Instruments | Method and apparatus for determination of source polarization matrix |
TWI453796B (zh) * | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | 偏光變更單元以及元件製造方法 |
JP2006237109A (ja) * | 2005-02-23 | 2006-09-07 | Nikon Corp | 光学系の評価方法、光学系、露光装置、および露光方法 |
JP2006279017A (ja) * | 2005-03-02 | 2006-10-12 | Canon Inc | 露光装置及び方法、計測装置、並びに、デバイス製造方法 |
JP4739411B2 (ja) * | 2005-06-13 | 2011-08-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影システムおよび投影レンズ偏光センサ |
-
2006
- 2006-06-13 JP JP2008516219A patent/JP4739411B2/ja active Active
- 2006-06-13 TW TW095121143A patent/TW200710592A/zh unknown
- 2006-06-13 CN CN2006800280862A patent/CN101233454B/zh active Active
- 2006-06-13 JP JP2008516222A patent/JP4717112B2/ja active Active
- 2006-06-13 TW TW095121140A patent/TWI347496B/zh not_active IP Right Cessation
- 2006-06-13 CN CN2006800280877A patent/CN101253451B/zh active Active
- 2006-06-13 CN CNA2006800281579A patent/CN101233455A/zh active Pending
- 2006-06-13 TW TW095121141A patent/TWI352878B/zh not_active IP Right Cessation
- 2006-06-13 JP JP2008516221A patent/JP4691594B2/ja not_active Expired - Fee Related
- 2006-06-13 JP JP2008516220A patent/JP4820870B2/ja active Active
- 2006-06-13 US US11/922,056 patent/US20100045956A1/en not_active Abandoned
- 2006-06-13 CN CNA200680028187XA patent/CN101253452A/zh active Pending
- 2006-06-13 US US11/922,018 patent/US20100182582A1/en not_active Abandoned
- 2006-06-13 TW TW095121142A patent/TW200710591A/zh unknown
- 2006-06-13 US US11/922,020 patent/US20100118288A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2008544507A (ja) | 2008-12-04 |
TW200710590A (en) | 2007-03-16 |
CN101253452A (zh) | 2008-08-27 |
JP2008546218A (ja) | 2008-12-18 |
CN101233455A (zh) | 2008-07-30 |
JP4691594B2 (ja) | 2011-06-01 |
US20100118288A1 (en) | 2010-05-13 |
CN101233454B (zh) | 2010-08-25 |
CN101253451A (zh) | 2008-08-27 |
JP4820870B2 (ja) | 2011-11-24 |
US20100182582A1 (en) | 2010-07-22 |
JP2008546219A (ja) | 2008-12-18 |
JP4739411B2 (ja) | 2011-08-03 |
TW200710589A (en) | 2007-03-16 |
CN101253451B (zh) | 2010-09-29 |
TW200710591A (en) | 2007-03-16 |
JP4717112B2 (ja) | 2011-07-06 |
JP2008547190A (ja) | 2008-12-25 |
CN101233454A (zh) | 2008-07-30 |
US20100045956A1 (en) | 2010-02-25 |
TWI352878B (en) | 2011-11-21 |
TW200710592A (en) | 2007-03-16 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |