TWI347496B - Lithographic device, and method - Google Patents

Lithographic device, and method

Info

Publication number
TWI347496B
TWI347496B TW095121140A TW95121140A TWI347496B TW I347496 B TWI347496 B TW I347496B TW 095121140 A TW095121140 A TW 095121140A TW 95121140 A TW95121140 A TW 95121140A TW I347496 B TWI347496 B TW I347496B
Authority
TW
Taiwan
Prior art keywords
lithographic device
lithographic
Prior art date
Application number
TW095121140A
Other languages
English (en)
Other versions
TW200710589A (en
Inventor
De Kerkhof Marcus Adrianus Van
Boeij Wilhelmus Petrus De
Greevenbroek Hendrikus Robertus Marie Van
Michel Fransois Hubert Klaassen
Haico Victor Kok
Johannes Maria Kuiper
Martijn Gerard Dominique Wehrens
Tammo Uitterdijk
Wilhelmus Jacobus Maria Rooijakkers
Dooren Leon Van
Jacob Sonneveld
Erwin Johannes Martinus Giling
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/361,049 external-priority patent/US20060203221A1/en
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200710589A publication Critical patent/TW200710589A/zh
Application granted granted Critical
Publication of TWI347496B publication Critical patent/TWI347496B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
TW095121140A 2005-06-13 2006-06-13 Lithographic device, and method TWI347496B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68980005P 2005-06-13 2005-06-13
US11/361,049 US20060203221A1 (en) 2005-02-25 2006-02-24 Lithographic apparatus and a method for determining a polarization property

Publications (2)

Publication Number Publication Date
TW200710589A TW200710589A (en) 2007-03-16
TWI347496B true TWI347496B (en) 2011-08-21

Family

ID=39898983

Family Applications (4)

Application Number Title Priority Date Filing Date
TW095121140A TWI347496B (en) 2005-06-13 2006-06-13 Lithographic device, and method
TW095121141A TWI352878B (en) 2005-06-13 2006-06-13 Lithographic device, and method
TW095121142A TW200710591A (en) 2005-06-13 2006-06-13 Lithographic device, and method
TW095121143A TW200710592A (en) 2005-06-13 2006-06-13 Lithographic device, and method

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW095121141A TWI352878B (en) 2005-06-13 2006-06-13 Lithographic device, and method
TW095121142A TW200710591A (en) 2005-06-13 2006-06-13 Lithographic device, and method
TW095121143A TW200710592A (en) 2005-06-13 2006-06-13 Lithographic device, and method

Country Status (4)

Country Link
US (3) US20100182582A1 (zh)
JP (4) JP4739411B2 (zh)
CN (4) CN101253452A (zh)
TW (4) TWI347496B (zh)

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CN102067040B (zh) 2008-06-26 2013-05-08 Asml荷兰有限公司 重叠测量设备、光刻设备和使用这种重叠测量设备的器件制造方法
DE102009015393B3 (de) * 2009-03-20 2010-09-02 Carl Zeiss Smt Ag Messverfahren und Messsystem zur Messung der Doppelbrechung
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US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
DE102010001336B3 (de) 2010-01-28 2011-07-28 Carl Zeiss SMT GmbH, 73447 Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems
NL2005997A (en) 2010-02-19 2011-08-22 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
DE102012203944A1 (de) 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
US10215642B2 (en) * 2012-05-17 2019-02-26 The University Of Akron System and method for polarimetric wavelet fractal detection and imaging
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JP6038619B2 (ja) * 2012-12-04 2016-12-07 株式会社日立エルジーデータストレージ 偏光感受型光計測装置
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DE102013200961A1 (de) * 2013-01-22 2014-07-24 Carl Zeiss Smt Gmbh Polarisationsmessvorrichtung für eine Projektionsbelichtungsanlage
CN103105146B (zh) * 2013-01-22 2015-10-14 福州大学 用于三维显示的柱透镜光栅的平整性检测方法
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JP2015089055A (ja) * 2013-11-01 2015-05-07 セイコーエプソン株式会社 光学モジュールおよび原子発振器
CN103698015B (zh) * 2014-01-06 2015-10-14 清华大学深圳研究生院 偏振检测仪及检测方法
CN103792798B (zh) * 2014-01-28 2015-10-28 中国科学院上海光学精密机械研究所 光刻机偏振照明系统光瞳偏振态测量装置及其测试方法
DE102014205406A1 (de) 2014-03-24 2015-09-24 Carl Zeiss Smt Gmbh Messvorrichtung zum Bestimmen eines Polarisationsparameters
SG11201705805PA (en) * 2015-01-29 2017-08-30 Heptagon Micro Optics Pte Ltd Apparatus for producing patterned illumination
DE102015106041B4 (de) * 2015-04-20 2023-01-19 Rodenstock Gmbh Verfahren zur Kalibrierung einer Polarisationsachsenmessvorrichtung sowie Verfahren zur Bestimmung von Polarisationsachsen von Brillengläsern
TWI548875B (zh) * 2015-06-11 2016-09-11 Landrex Technologies Co Ltd Optical needle detection system and method
CN113561478B (zh) * 2015-10-30 2023-06-06 速尔特技术有限公司 增材制造系统和方法
JP6700932B2 (ja) 2016-04-20 2020-05-27 キヤノン株式会社 検出装置、検出方法、プログラム、リソグラフィ装置、および物品製造方法
CN112840271A (zh) * 2018-10-11 2021-05-25 Asml荷兰有限公司 多源照射单元及其操作方法
US10942135B2 (en) 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
US11537055B2 (en) * 2019-03-13 2022-12-27 Asml Holding N.V. Lithographic apparatus, metrology apparatus, optical system and method
CN112394620B (zh) * 2019-08-16 2022-04-01 上海微电子装备（集团）股份有限公司 测量装置和光刻机
CN112880987B (zh) * 2019-11-29 2022-05-03 上海微电子装备（集团）股份有限公司 光学元件的偏振性能检测方法及检测系统
KR20210089949A (ko) 2020-01-09 2021-07-19 삼성전자주식회사 극자외선 광원의 레이저 빔 딜리버리 장치
US11774866B2 (en) * 2020-09-03 2023-10-03 Kla Corporation Active reticle carrier for in situ stage correction
CN113281256B (zh) * 2021-05-31 2022-06-03 中国科学院长春光学精密机械与物理研究所 穆勒矩阵测量装置及其测量方法
CN117250832B (zh) * 2023-11-15 2024-02-23 福建安芯半导体科技有限公司 一种精密定位平台及光刻机

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Also Published As

Publication number Publication date
US20100118288A1 (en) 2010-05-13
CN101233454B (zh) 2010-08-25
CN101253452A (zh) 2008-08-27
JP4691594B2 (ja) 2011-06-01
JP2008544507A (ja) 2008-12-04
JP2008547190A (ja) 2008-12-25
US20100182582A1 (en) 2010-07-22
CN101233454A (zh) 2008-07-30
TW200710592A (en) 2007-03-16
US20100045956A1 (en) 2010-02-25
JP4820870B2 (ja) 2011-11-24
TW200710591A (en) 2007-03-16
JP4717112B2 (ja) 2011-07-06
JP4739411B2 (ja) 2011-08-03
CN101253451B (zh) 2010-09-29
TW200710589A (en) 2007-03-16
JP2008546219A (ja) 2008-12-18
TW200710590A (en) 2007-03-16
CN101253451A (zh) 2008-08-27
CN101233455A (zh) 2008-07-30
TWI352878B (en) 2011-11-21
JP2008546218A (ja) 2008-12-18

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees