TWI346836B - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
TWI346836B
TWI346836B TW093130888A TW93130888A TWI346836B TW I346836 B TWI346836 B TW I346836B TW 093130888 A TW093130888 A TW 093130888A TW 93130888 A TW93130888 A TW 93130888A TW I346836 B TWI346836 B TW I346836B
Authority
TW
Taiwan
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Application number
TW093130888A
Other languages
English (en)
Chinese (zh)
Other versions
TW200517779A (en
Inventor
Masaki Hosaka
Masatoshi Homma
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of TW200517779A publication Critical patent/TW200517779A/zh
Application granted granted Critical
Publication of TWI346836B publication Critical patent/TWI346836B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Polyethers (AREA)
TW093130888A 2003-10-14 2004-10-12 Photoresist composition TWI346836B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003353720 2003-10-14

Publications (2)

Publication Number Publication Date
TW200517779A TW200517779A (en) 2005-06-01
TWI346836B true TWI346836B (en) 2011-08-11

Family

ID=34431168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130888A TWI346836B (en) 2003-10-14 2004-10-12 Photoresist composition

Country Status (5)

Country Link
JP (1) JP4673222B2 (ko)
KR (1) KR101073417B1 (ko)
CN (1) CN1853138B (ko)
TW (1) TWI346836B (ko)
WO (1) WO2005036268A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
WO2010139390A1 (en) * 2009-06-04 2010-12-09 Merck Patent Gmbh Two component etching
WO2016171233A1 (ja) * 2015-04-22 2016-10-27 日産化学工業株式会社 感光性繊維及び繊維パターンの形成方法
JP6702251B2 (ja) 2017-04-17 2020-05-27 信越化学工業株式会社 ポジ型レジストフィルム積層体及びパターン形成方法
KR102146095B1 (ko) 2017-09-15 2020-08-19 주식회사 엘지화학 화학증폭형 포토레지스트 조성물, 포토레지스트 패턴, 및 포토레지스트 패턴 제조방법
JP7233444B2 (ja) * 2018-06-22 2023-03-06 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジスト組成物、フォトレジストコーティング、エッチングされたフォトレジストコーティングおよびエッチングされたＳｉ含有層を製造する方法、ならびにそれらを用いたデバイスの製造

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743501B2 (ja) * 1986-04-24 1995-05-15 富士写真フイルム株式会社 ポジ型感光性平版印刷版
JP2539664B2 (ja) * 1988-05-31 1996-10-02 コニカ株式会社 感光性平版印刷版
JP2739382B2 (ja) * 1990-12-06 1998-04-15 富士写真フイルム株式会社 平版印刷版の製造方法
GB9722862D0 (en) * 1997-10-29 1997-12-24 Horsell Graphic Ind Ltd Pattern formation
JP2000275830A (ja) * 1999-03-25 2000-10-06 Mitsubishi Chemicals Corp 光重合性組成物、画像形成材料及び感光性平版印刷版
JP3802732B2 (ja) * 2000-05-12 2006-07-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3458096B2 (ja) * 2000-08-11 2003-10-20 株式会社半導体先端テクノロジーズ レジスト組成物、及び半導体装置の製造方法
KR100903153B1 (ko) * 2001-10-10 2009-06-17 닛산 가가쿠 고교 가부시키 가이샤 리소그래피용 반사방지막 형성 조성물
JP3933459B2 (ja) * 2001-12-14 2007-06-20 旭化成エレクトロニクス株式会社 感光性樹脂組成物及び積層体

Also Published As

Publication number Publication date
JP4673222B2 (ja) 2011-04-20
KR20070017962A (ko) 2007-02-13
TW200517779A (en) 2005-06-01
WO2005036268A1 (ja) 2005-04-21
CN1853138A (zh) 2006-10-25
CN1853138B (zh) 2011-06-15
KR101073417B1 (ko) 2011-10-17
JPWO2005036268A1 (ja) 2007-11-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees