TWI346394B - Light-emitting diode and semiconductor light-emitting device - Google Patents

Light-emitting diode and semiconductor light-emitting device

Info

Publication number
TWI346394B
TWI346394B TW093133220A TW93133220A TWI346394B TW I346394 B TWI346394 B TW I346394B TW 093133220 A TW093133220 A TW 093133220A TW 93133220 A TW93133220 A TW 93133220A TW I346394 B TWI346394 B TW I346394B
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
emitting device
emitting
semiconductor light
Prior art date
Application number
TW093133220A
Other languages
English (en)
Other versions
TW200520268A (en
Inventor
Hirohisa Saito
Yoshiyuki Hirose
Youichi Nagai
Hiroyuki Kitabayashi
Ayako Ikeda
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200520268A publication Critical patent/TW200520268A/zh
Application granted granted Critical
Publication of TWI346394B publication Critical patent/TWI346394B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0045—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide
    • G02B6/0046—Tapered light guide, e.g. wedge-shaped light guide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW093133220A 2003-11-20 2004-11-01 Light-emitting diode and semiconductor light-emitting device TWI346394B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003390882A JP2005158795A (ja) 2003-11-20 2003-11-20 発光ダイオード及び半導体発光装置

Publications (2)

Publication Number Publication Date
TW200520268A TW200520268A (en) 2005-06-16
TWI346394B true TWI346394B (en) 2011-08-01

Family

ID=34431599

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093133220A TWI346394B (en) 2003-11-20 2004-11-01 Light-emitting diode and semiconductor light-emitting device

Country Status (6)

Country Link
US (1) US20050110032A1 (zh)
EP (1) EP1533851A3 (zh)
JP (1) JP2005158795A (zh)
KR (1) KR20050049390A (zh)
CN (1) CN100438091C (zh)
TW (1) TWI346394B (zh)

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KR20070049322A (ko) * 2005-11-08 2007-05-11 엘지이노텍 주식회사 백라이트 어셈블리 및 이를 구비한 액정표시장치
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
US7521727B2 (en) * 2006-04-26 2009-04-21 Rohm And Haas Company Light emitting device having improved light extraction efficiency and method of making same
US7955531B1 (en) 2006-04-26 2011-06-07 Rohm And Haas Electronic Materials Llc Patterned light extraction sheet and method of making same
US7626210B2 (en) * 2006-06-09 2009-12-01 Philips Lumileds Lighting Company, Llc Low profile side emitting LED
US8080828B2 (en) 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
KR20090048611A (ko) * 2006-07-28 2009-05-14 티아이알 테크놀로지 엘피 에지 방출 소자를 포함하는 광원
KR100849887B1 (ko) * 2007-02-08 2008-08-04 주식회사 파워라이텍 청색칩과 형광체를 이용한 백색 발광다이오드 칩
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EP2212928B1 (en) * 2007-11-20 2016-06-29 Koninklijke Philips N.V. Side emitting device with wavelength conversion
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US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101719655B1 (ko) * 2010-09-29 2017-03-24 서울반도체 주식회사 형광체 시트, 형광체 시트를 갖는 발광장치 및 그 제조 방법
CN102969427A (zh) * 2011-08-31 2013-03-13 华夏光股份有限公司 半导体发光装置及其制造方法
WO2014034228A1 (ja) * 2012-08-31 2014-03-06 三菱化学株式会社 照明方法及び発光装置
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KR101457036B1 (ko) * 2013-06-04 2014-10-31 고려대학교 산학협력단 반도체 발광 소자 및 이를 제조하는 방법
EP3044503A1 (en) * 2013-09-10 2016-07-20 Philips Lighting Holding B.V. A light emitting device
EP2854186A1 (en) * 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
KR20150037680A (ko) * 2013-09-30 2015-04-08 서울반도체 주식회사 광원 모듈 및 이를 구비한 백라이트 유닛
JP6299176B2 (ja) * 2013-11-22 2018-03-28 日亜化学工業株式会社 発光装置およびその製造方法ならびにこの発光装置を備える照明装置
KR101539994B1 (ko) * 2013-11-28 2015-07-30 순천대학교 산학협력단 측면 발광 다이오드 및 그 제조 방법
WO2015080416A1 (ko) * 2013-11-28 2015-06-04 순천대학교 산학협력단 측면 발광 다이오드, 면광원 및 그 제조 방법
KR102318355B1 (ko) * 2014-01-09 2021-10-28 루미리즈 홀딩 비.브이. 반사성 측벽을 갖는 발광 디바이스
WO2015173026A2 (en) * 2014-05-14 2015-11-19 Koninklijke Philips N.V. A light emitting device
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
DE102014110071A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP6520373B2 (ja) * 2015-05-14 2019-05-29 日亜化学工業株式会社 発光素子
CN106549094B (zh) * 2015-09-18 2020-03-10 新世纪光电股份有限公司 发光元件封装结构
JP2017098398A (ja) * 2015-11-24 2017-06-01 豊田合成株式会社 発光装置および照明装置
CN105529386B (zh) * 2016-01-20 2018-05-22 华灿光电股份有限公司 一种发光二极管芯片及其制作方法
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
CN106449619B (zh) * 2016-09-09 2019-06-11 华灿光电（浙江）有限公司 一种发光二极管芯片及其制作方法
DE102016118030A1 (de) * 2016-09-23 2018-03-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauteil
KR101672878B1 (ko) * 2016-10-04 2016-11-07 주식회사 세미콘라이트 반도체 발광다이오드
JP6925694B2 (ja) * 2017-04-12 2021-08-25 シチズン電子株式会社 発光装置
KR102432217B1 (ko) * 2017-11-07 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 이를 포함하는 조명장치
US10651351B1 (en) 2018-11-13 2020-05-12 Cree, Inc. Light emitting diode packages
JP6876274B2 (ja) 2018-11-14 2021-05-26 日亜化学工業株式会社 発光素子、発光装置及び発光素子の製造方法
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JP7037080B2 (ja) * 2019-08-07 2022-03-16 日亜化学工業株式会社 発光素子
JP7361257B2 (ja) 2019-09-27 2023-10-16 日亜化学工業株式会社 発光装置

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Also Published As

Publication number Publication date
JP2005158795A (ja) 2005-06-16
CN100438091C (zh) 2008-11-26
TW200520268A (en) 2005-06-16
EP1533851A3 (en) 2010-05-26
CN1619849A (zh) 2005-05-25
US20050110032A1 (en) 2005-05-26
KR20050049390A (ko) 2005-05-25
EP1533851A2 (en) 2005-05-25

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees