TWI345263B - - Google Patents
Download PDFInfo
- Publication number
- TWI345263B TWI345263B TW093103076A TW93103076A TWI345263B TW I345263 B TWI345263 B TW I345263B TW 093103076 A TW093103076 A TW 093103076A TW 93103076 A TW93103076 A TW 93103076A TW I345263 B TWI345263 B TW I345263B
- Authority
- TW
- Taiwan
- Prior art keywords
- container
- filling
- carrier gas
- trimethyl indium
- organometallic compound
- Prior art date
Links
- 239000012159 carrier gas Substances 0.000 claims description 173
- 238000011049 filling Methods 0.000 claims description 98
- 239000002245 particle Substances 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 83
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 83
- 238000005192 partition Methods 0.000 claims description 62
- 239000007789 gas Substances 0.000 claims description 41
- -1 trimethylindium hydrazine Chemical compound 0.000 claims description 11
- 238000000638 solvent extraction Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- ZQWGDEYSJWGSPU-UHFFFAOYSA-N [Ru].C[In](C)C Chemical compound [Ru].C[In](C)C ZQWGDEYSJWGSPU-UHFFFAOYSA-N 0.000 claims 3
- SZEJQLSRYARYHS-UHFFFAOYSA-N dimethylindium Chemical compound C[In]C SZEJQLSRYARYHS-UHFFFAOYSA-N 0.000 claims 3
- WUGIHIDKVSDYPA-UHFFFAOYSA-N CNN(C)C.NN Chemical compound CNN(C)C.NN WUGIHIDKVSDYPA-UHFFFAOYSA-N 0.000 claims 1
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims 1
- 241000143957 Vanessa atalanta Species 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 claims 1
- 239000007787 solid Substances 0.000 description 160
- 150000002902 organometallic compounds Chemical class 0.000 description 157
- 150000001875 compounds Chemical class 0.000 description 16
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 11
- 150000002736 metal compounds Chemical class 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 8
- 206010036790 Productive cough Diseases 0.000 description 7
- 210000003802 sputum Anatomy 0.000 description 7
- 208000024794 sputum Diseases 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 210000003298 dental enamel Anatomy 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 238000013112 stability test Methods 0.000 description 4
- OEERIBPGRSLGEK-UHFFFAOYSA-N carbon dioxide;methanol Chemical compound OC.O=C=O OEERIBPGRSLGEK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 150000003304 ruthenium compounds Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 210000002784 stomach Anatomy 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000287107 Passer Species 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- PXAJQJMDEXJWFB-UHFFFAOYSA-N acetone oxime Chemical compound CC(C)=NO PXAJQJMDEXJWFB-UHFFFAOYSA-N 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SIKHRXJYVXUVKN-UHFFFAOYSA-N copper;pentane-2,4-dione Chemical compound [Cu+2].CC(=O)CC([CH2-])=O.CC(=O)CC([CH2-])=O SIKHRXJYVXUVKN-UHFFFAOYSA-N 0.000 description 1
- LCGVCXIFXLGLHG-UHFFFAOYSA-N cyclopenta-1,3-diene;manganese(2+) Chemical compound [Mn+2].C1C=CC=[C-]1.C1C=CC=[C-]1 LCGVCXIFXLGLHG-UHFFFAOYSA-N 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- QYHNIMDZIYANJH-UHFFFAOYSA-N diindium Chemical compound [In]#[In] QYHNIMDZIYANJH-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- RGCLLPNLLBQHPF-HJWRWDBZSA-N phosphamidon Chemical compound CCN(CC)C(=O)C(\Cl)=C(/C)OP(=O)(OC)OC RGCLLPNLLBQHPF-HJWRWDBZSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- JQPMDTQDAXRDGS-UHFFFAOYSA-N triphenylalumane Chemical compound C1=CC=CC=C1[Al](C=1C=CC=CC=1)C1=CC=CC=C1 JQPMDTQDAXRDGS-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
- G06F3/0487—Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser
- G06F3/0488—Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/46—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with organic materials
- C04B41/49—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes
- C04B41/4905—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon
- C04B41/4922—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon applied to the substrate as monomers, i.e. as organosilanes RnSiX4-n, e.g. alkyltrialkoxysilane, dialkyldialkoxysilane
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133311—Environmental protection, e.g. against dust or humidity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003273784A JP4585182B2 (ja) | 2003-07-11 | 2003-07-11 | トリメチルインジウムの充填方法および充填容器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200503080A TW200503080A (en) | 2005-01-16 |
| TWI345263B true TWI345263B (ko) | 2011-07-11 |
Family
ID=34210922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093103076A TW200503080A (en) | 2003-07-11 | 2004-02-10 | Solid organometallic compound-filled container and filling method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4585182B2 (ko) |
| KR (2) | KR101072108B1 (ko) |
| CN (1) | CN1590583B (ko) |
| TW (1) | TW200503080A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI617764B (zh) * | 2017-06-06 | 2018-03-11 | 江蘇南大光電材料股份有限公司 | 固體金屬有機化合物的封裝容器 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5655874B2 (ja) * | 2006-03-15 | 2015-01-21 | 宇部興産株式会社 | 気相成長用担体担持有機金属化合物及びその製法、並びに当該化合物を充填した気相成長用有機金属化合物充填装置 |
| JP5431649B2 (ja) * | 2006-03-15 | 2014-03-05 | 宇部興産株式会社 | 気相成長用担体担持有機金属化合物充填装置、気相成長用担体担持有機金属化合物の製法および気相成長用担体担持有機金属化合物の供給方法 |
| CN103350905A (zh) * | 2006-05-30 | 2013-10-16 | 宇部兴产株式会社 | 有机金属化合物的供给装置 |
| JP5045062B2 (ja) * | 2006-10-30 | 2012-10-10 | 住友化学株式会社 | 固体有機金属化合物の供給方法 |
| GB2444143B (en) * | 2006-11-27 | 2009-10-28 | Sumitomo Chemical Co | Apparatus of supplying organometallic compound |
| CN105063570A (zh) * | 2015-08-31 | 2015-11-18 | 清远先导材料有限公司 | 一种提高三甲基铟利用率的方法 |
| KR102027179B1 (ko) * | 2018-05-08 | 2019-10-02 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
| KR102208303B1 (ko) * | 2019-09-25 | 2021-01-28 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
| CN114059038B (zh) * | 2020-08-07 | 2024-02-09 | 吕宝源 | 固态金属有机化合物转态方法及其转态系统 |
| JP6879607B1 (ja) | 2020-10-30 | 2021-06-02 | 株式会社三秀 | 転造加工装置 |
| KR102407768B1 (ko) * | 2021-07-01 | 2022-06-10 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
| FI130131B (en) | 2021-09-07 | 2023-03-09 | Picosun Oy | Precursor container |
| KR102692080B1 (ko) * | 2021-10-28 | 2024-08-06 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
| KR102692082B1 (ko) * | 2021-10-28 | 2024-08-06 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
| KR102692081B1 (ko) * | 2021-10-28 | 2024-08-06 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720561A (en) * | 1984-03-26 | 1988-01-19 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Preparation of metal alkyls |
| JPS6464314A (en) * | 1987-09-04 | 1989-03-10 | Mitsubishi Electric Corp | Sublimator |
| JPH01168331A (ja) * | 1987-12-24 | 1989-07-03 | Mitsui Toatsu Chem Inc | 有機金属化合物の飽和方法 |
| JP2651530B2 (ja) * | 1988-04-15 | 1997-09-10 | 住友化学工業株式会社 | 気相成長用有機金属化合物供給装置 |
| JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
| US5989305A (en) * | 1995-03-09 | 1999-11-23 | Shin-Etsu Chemical Co., Ltd. | Feeder of a solid organometallic compound |
| JP2964313B2 (ja) * | 1995-03-09 | 1999-10-18 | 信越化学工業株式会社 | 固体有機金属化合物供給装置及びその製造方法 |
| JPH10223540A (ja) * | 1997-02-03 | 1998-08-21 | Sony Corp | 有機金属気相成長装置 |
| EP1079001B1 (en) * | 1999-08-20 | 2005-06-15 | Morton International, Inc. | Dual fritted bubbler |
| JP3932874B2 (ja) * | 2001-11-27 | 2007-06-20 | 三菱マテリアル株式会社 | 有機金属化学蒸着法用ルテニウム化合物及び該化合物により得られたルテニウム含有薄膜 |
-
2003
- 2003-07-11 JP JP2003273784A patent/JP4585182B2/ja not_active Expired - Fee Related
-
2004
- 2004-02-10 TW TW093103076A patent/TW200503080A/zh not_active IP Right Cessation
- 2004-02-12 KR KR1020040009277A patent/KR101072108B1/ko active IP Right Grant
- 2004-07-09 CN CN2004100638127A patent/CN1590583B/zh not_active Expired - Fee Related
-
2011
- 2011-08-12 KR KR1020110080409A patent/KR101358204B1/ko active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI617764B (zh) * | 2017-06-06 | 2018-03-11 | 江蘇南大光電材料股份有限公司 | 固體金屬有機化合物的封裝容器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110099079A (ko) | 2011-09-06 |
| KR101072108B1 (ko) | 2011-10-10 |
| KR101358204B1 (ko) | 2014-02-05 |
| CN1590583B (zh) | 2010-04-28 |
| KR20050008456A (ko) | 2005-01-21 |
| CN1590583A (zh) | 2005-03-09 |
| TW200503080A (en) | 2005-01-16 |
| JP2005033146A (ja) | 2005-02-03 |
| JP4585182B2 (ja) | 2010-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI345263B (ko) | ||
| CN101405433B (zh) | 用于减少沉积系统中粒子污染的方法和设备 | |
| US7547363B2 (en) | Solid organometallic compound-filled container and filling method thereof | |
| US20070218200A1 (en) | Method and apparatus for reducing particle formation in a vapor distribution system | |
| KR101104058B1 (ko) | 반도체 처리 장치를 위한 프리커서를 생성하는 방법 및장치 | |
| US7524374B2 (en) | Method and apparatus for generating a precursor for a semiconductor processing system | |
| US6905541B2 (en) | Method and apparatus of generating PDMAT precursor | |
| TWI352745B (en) | Delivery device | |
| US8168001B2 (en) | Film-forming apparatus and film-forming method | |
| EP2418300B1 (en) | Delivery device and method of use thereof | |
| KR20070083865A (ko) | 금속 카르보닐 전구체로부터 금속 층이 증착하는 속도를증가시키는 방법 및 증착 시스템 | |
| KR20070083871A (ko) | 금속 카르보닐 전구체로부터 금속 층이 증착하는 속도를증가시키는 방법 | |
| TW201139726A (en) | Solid precursor delivery assemblies and related methods | |
| TW201925047A (zh) | 固體材料容器及於該固體材料容器填充有固體材料之固體材料製品 | |
| TWI273643B (en) | Solid organometallic compound-filled container and filling method thereof | |
| JP6237882B2 (ja) | 有機金属化合物含有ガスの供給装置 | |
| JP2003303772A (ja) | 固体有機金属化合物用充填容器およびその充填方法 | |
| JPH03116739A (ja) | 気相エピタキシャル成長用蒸発器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |