TWI343764B - - Google Patents
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- Publication number
- TWI343764B TWI343764B TW096102449A TW96102449A TWI343764B TW I343764 B TWI343764 B TW I343764B TW 096102449 A TW096102449 A TW 096102449A TW 96102449 A TW96102449 A TW 96102449A TW I343764 B TWI343764 B TW I343764B
- Authority
- TW
- Taiwan
- Prior art keywords
- microwave
- generating
- plasma
- workpiece
- waveguide
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 7
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- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 239000007789 gas Substances 0.000 description 41
- 239000004020 conductor Substances 0.000 description 26
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- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101100313266 Mus musculus Tead1 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- 238000010891 electric arc Methods 0.000 description 1
- 238000009297 electrocoagulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 230000001902 propagating effect Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
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- 239000007921 spray Substances 0.000 description 1
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- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006042197A JP4699235B2 (ja) | 2006-02-20 | 2006-02-20 | プラズマ発生装置およびそれを用いるワーク処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200742505A TW200742505A (en) | 2007-11-01 |
| TWI343764B true TWI343764B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2011-06-11 |
Family
ID=38426875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096102449A TW200742505A (en) | 2006-02-20 | 2007-01-23 | Plasma generation apparatus and work process apparatus |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI387041B (zh) * | 2007-10-16 | 2013-02-21 | Dainippon Screen Mfg | Substrate cooling method and substrate cooling device |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7562638B2 (en) * | 2005-12-23 | 2009-07-21 | Lam Research Corporation | Methods and arrangement for implementing highly efficient plasma traps |
| TW200930158A (en) * | 2007-12-25 | 2009-07-01 | Ind Tech Res Inst | Jet plasma gun and plasma device using the same |
| KR20100025249A (ko) * | 2008-08-27 | 2010-03-09 | (주)쎄미시스코 | 공정챔버의 리크 검출 방법 |
| US8808456B2 (en) * | 2008-08-29 | 2014-08-19 | Tokyo Electron Limited | Film deposition apparatus and substrate process apparatus |
| US9297072B2 (en) * | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
| US8841629B2 (en) * | 2012-06-27 | 2014-09-23 | Applied Materials, Inc. | Microwave excursion detection for semiconductor processing |
| US9284210B2 (en) * | 2014-03-31 | 2016-03-15 | Corning Incorporated | Methods and apparatus for material processing using dual source cyclonic plasma reactor |
| US10079135B1 (en) * | 2018-04-18 | 2018-09-18 | Consolidated Nuclear Security, LLC | Gas-sealed stub tuner for microwave systems |
| JP7043608B2 (ja) * | 2018-08-23 | 2022-03-29 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、基板処理方法及びプログラム |
| KR20210147031A (ko) * | 2019-04-05 | 2021-12-06 | 파이로웨이브 인크 | 마이크로파 열분해 시스템을 위한 커플러 |
| DE112019008000T5 (de) * | 2019-12-24 | 2022-10-27 | Fuji Corporation | Plasmavorrichtung |
| CN112844949A (zh) * | 2020-12-31 | 2021-05-28 | 上海爱声生物医疗科技有限公司 | 一种医用导管涂层涂覆设备 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5378170A (en) * | 1976-12-22 | 1978-07-11 | Toshiba Corp | Continuous processor for gas plasma etching |
| CN2064507U (zh) * | 1990-03-17 | 1990-10-24 | 地方国营宿迁无线电厂 | 微波泄漏检测器 |
| US5645796A (en) * | 1990-08-31 | 1997-07-08 | Abtox, Inc. | Process for plasma sterilizing with pulsed antimicrobial agent treatment |
| FR2691035B1 (fr) * | 1992-05-07 | 1994-06-17 | France Telecom | Dispositif et machine a plasma de traitement chimique et procede utilisant ce dispositif. |
| JPH06244140A (ja) * | 1992-10-28 | 1994-09-02 | Nec Kyushu Ltd | ドライエッチング装置 |
| JPH07135196A (ja) * | 1993-06-29 | 1995-05-23 | Nec Kyushu Ltd | 半導体基板アッシング装置 |
| JP3137810B2 (ja) * | 1993-07-29 | 2001-02-26 | キヤノン株式会社 | マイクロ波プラズマ放電停止検知方法、マイクロ波プラズマ処理方法及びマイクロ波プラズマ処理装置 |
| JP4044397B2 (ja) | 2001-10-15 | 2008-02-06 | 積水化学工業株式会社 | プラズマ表面処理装置 |
| JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
| US20060057016A1 (en) * | 2002-05-08 | 2006-03-16 | Devendra Kumar | Plasma-assisted sintering |
| AU2003230267A1 (en) * | 2002-05-08 | 2003-11-11 | Dana Corporation | Plasma-assisted enhanced coating |
| US6769288B2 (en) * | 2002-11-01 | 2004-08-03 | Peak Sensor Systems Llc | Method and assembly for detecting a leak in a plasma system |
| JP4233348B2 (ja) * | 2003-02-24 | 2009-03-04 | シャープ株式会社 | プラズマプロセス装置 |
| CN2704179Y (zh) | 2004-05-14 | 2005-06-08 | 徐仁本 | 微波炉安全防护罩 |
| US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
| US7806077B2 (en) | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
| US20060021980A1 (en) | 2004-07-30 | 2006-02-02 | Lee Sang H | System and method for controlling a power distribution within a microwave cavity |
| CN100456898C (zh) * | 2004-11-11 | 2009-01-28 | 南开大学 | 具有在线实时显示微波泄漏的微波协助化学反应谐振腔 |
| JP4022590B2 (ja) * | 2005-03-25 | 2007-12-19 | 株式会社エーイーティー | マイクロ波プラズマ発生装置 |
-
2006
- 2006-02-20 JP JP2006042197A patent/JP4699235B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-23 TW TW096102449A patent/TW200742505A/zh not_active IP Right Cessation
- 2007-01-29 KR KR1020070008811A patent/KR100884663B1/ko not_active Expired - Fee Related
- 2007-02-06 US US11/703,038 patent/US7682482B2/en not_active Expired - Fee Related
- 2007-02-08 CN CN2007100028736A patent/CN101026920B/zh not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI387041B (zh) * | 2007-10-16 | 2013-02-21 | Dainippon Screen Mfg | Substrate cooling method and substrate cooling device |
Also Published As
| Publication number | Publication date |
|---|---|
| US7682482B2 (en) | 2010-03-23 |
| CN101026920B (zh) | 2010-10-06 |
| JP2007220586A (ja) | 2007-08-30 |
| KR20070083176A (ko) | 2007-08-23 |
| US20070193516A1 (en) | 2007-08-23 |
| CN101026920A (zh) | 2007-08-29 |
| JP4699235B2 (ja) | 2011-06-08 |
| KR100884663B1 (ko) | 2009-02-18 |
| TW200742505A (en) | 2007-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |