TWI342470B - Microlithographic projection exposure apparatus and method - Google Patents

Microlithographic projection exposure apparatus and method Download PDF

Info

Publication number
TWI342470B
TWI342470B TW96130260A TW96130260A TWI342470B TW I342470 B TWI342470 B TW I342470B TW 96130260 A TW96130260 A TW 96130260A TW 96130260 A TW96130260 A TW 96130260A TW I342470 B TWI342470 B TW I342470B
Authority
TW
Taiwan
Prior art keywords
polarization
light
exposure apparatus
projection exposure
pulsed light
Prior art date
Application number
TW96130260A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832073A (en
Inventor
Markus Mengel
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Publication of TW200832073A publication Critical patent/TW200832073A/zh
Application granted granted Critical
Publication of TWI342470B publication Critical patent/TWI342470B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
TW96130260A 2006-08-17 2007-08-16 Microlithographic projection exposure apparatus and method TWI342470B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200610038643 DE102006038643B4 (de) 2006-08-17 2006-08-17 Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren

Publications (2)

Publication Number Publication Date
TW200832073A TW200832073A (en) 2008-08-01
TWI342470B true TWI342470B (en) 2011-05-21

Family

ID=38973206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96130260A TWI342470B (en) 2006-08-17 2007-08-16 Microlithographic projection exposure apparatus and method

Country Status (5)

Country Link
US (1) US8675178B2 (enExample)
JP (1) JP4730675B2 (enExample)
DE (1) DE102006038643B4 (enExample)
TW (1) TWI342470B (enExample)
WO (1) WO2008019936A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102010029339A1 (de) 2010-05-27 2011-12-01 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102010029905A1 (de) 2010-06-10 2011-12-15 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102011076434A1 (de) 2011-05-25 2012-11-29 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102011079777A1 (de) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren
DE102011085334A1 (de) 2011-10-27 2013-05-02 Carl Zeiss Smt Gmbh Optisches System in einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102012200370A1 (de) 2012-01-12 2013-08-01 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines polarisationsbeeinflussenden optischen Elements, sowie polarisationsbeeinflussendes optisches Element
DE102012203944A1 (de) 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
DE102012205045A1 (de) 2012-03-29 2013-10-02 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
WO2013143594A1 (en) 2012-03-29 2013-10-03 Carl Zeiss Smt Gmbh Apparatus and method for compensating a defect of a channel of a microlithographic projection exposure system
DE102012206148A1 (de) 2012-04-16 2013-10-17 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zur Justage eines optischen Systems
DE102012206154A1 (de) 2012-04-16 2013-06-06 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012206159A1 (de) 2012-04-16 2013-06-20 Carl Zeiss Smt Gmbh Polarisationsbeeinflussende optische Anordnung
DE102012214052A1 (de) 2012-08-08 2014-02-13 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren, sowie mikrolithographische Projektionsbelichtungsanlage
DE102012214198A1 (de) 2012-08-09 2013-05-29 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102012217769A1 (de) 2012-09-28 2014-04-03 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012223217B9 (de) * 2012-12-14 2014-07-10 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102013200137A1 (de) 2013-01-08 2013-11-14 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage
US8922753B2 (en) 2013-03-14 2014-12-30 Carl Zeiss Smt Gmbh Optical system for a microlithographic projection exposure apparatus
DE102013204453B4 (de) 2013-03-14 2019-11-21 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110722A (ja) * 1986-10-29 1988-05-16 Hitachi Ltd 露光照明装置
JPS63193130A (ja) * 1987-02-05 1988-08-10 Canon Inc 光量制御装置
JP3246615B2 (ja) * 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JP3099933B2 (ja) * 1993-12-28 2000-10-16 株式会社東芝 露光方法及び露光装置
KR0153796B1 (ko) 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
US5442184A (en) * 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
US5652673A (en) 1994-06-24 1997-07-29 Hinds Instruments, Inc. Elimination of modulated interference effects in photoelastic modulators
US5815247A (en) * 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
US5744721A (en) 1995-10-25 1998-04-28 Hinds Instruments, Inc. Electronic control system for an optical assembly
CA2297672A1 (en) 1997-07-28 1999-02-04 Hinds Instruments, Inc. Measurement of waveplate retardation using a photoelastic modulator
US5886810A (en) 1997-09-29 1999-03-23 Hinds Instruments, Inc. Mounting apparatus for an optical assembly of a photoelastic modulator
US6473179B1 (en) 1998-02-20 2002-10-29 Hinds Instruments, Inc. Birefringence measurement system
DE19921795A1 (de) * 1999-05-11 2000-11-23 Zeiss Carl Fa Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie
US6268914B1 (en) 2000-01-14 2001-07-31 Hinds Instruments, Inc. Calibration Process For Birefringence Measurement System
JP2001302255A (ja) * 2000-04-19 2001-10-31 Nikon Corp 光学部材の製造方法、光学部材および投影露光装置
TW571344B (en) * 2001-07-10 2004-01-11 Nikon Corp Manufacturing method for projection optic system
TW554411B (en) * 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
DE10252523A1 (de) 2001-11-16 2003-07-03 Ccs Inc Beleuchtungsvorrichtung zur optischen Prüfung
EP1367446A1 (en) 2002-05-31 2003-12-03 ASML Netherlands B.V. Lithographic apparatus
US7352453B2 (en) * 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
US7289223B2 (en) * 2003-01-31 2007-10-30 Carl Zeiss Smt Ag Method and apparatus for spatially resolved polarimetry
WO2005024516A2 (de) 2003-08-14 2005-03-17 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
JP4717813B2 (ja) 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
JP4323903B2 (ja) 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
US6829040B1 (en) * 2003-11-07 2004-12-07 Advanced Micro Devices, Inc. Lithography contrast enhancement technique by varying focus with wavelength modulation
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
US7158275B2 (en) * 2004-04-13 2007-01-02 Intel Corporation Polarization modulator
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
JP5159027B2 (ja) 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
JP2006005319A (ja) * 2004-06-21 2006-01-05 Canon Inc 照明光学系及び方法、露光装置及びデバイス製造方法
EP1621930A3 (en) * 2004-07-29 2011-07-06 Carl Zeiss SMT GmbH Illumination system for a microlithographic projection exposure apparatus
WO2006040184A2 (en) * 2004-10-15 2006-04-20 Carl Zeiss Smt Ag Illumination system for a microlithographic projection exposure apparatus
US20070058151A1 (en) * 2005-09-13 2007-03-15 Asml Netherlands B.V. Optical element for use in lithography apparatus and method of conditioning radiation beam
US7525642B2 (en) 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006032810A1 (de) 2006-07-14 2008-01-17 Carl Zeiss Smt Ag Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, mikrolithografie-Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithografisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
DE102008009601A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren

Also Published As

Publication number Publication date
US20090040498A1 (en) 2009-02-12
WO2008019936A3 (en) 2008-04-17
WO2008019936A2 (en) 2008-02-21
DE102006038643B4 (de) 2009-06-10
TW200832073A (en) 2008-08-01
JP4730675B2 (ja) 2011-07-20
DE102006038643A1 (de) 2008-02-28
JP2010501113A (ja) 2010-01-14
US8675178B2 (en) 2014-03-18

Similar Documents

Publication Publication Date Title
TWI342470B (en) Microlithographic projection exposure apparatus and method
JP2010501113A5 (enExample)
TW452677B (en) Projection exposure system and an exposure method in microlithography
JP5673785B2 (ja) 露光方法及び装置、並びにデバイス製造方法
TWI307453B (en) Illumination apparatus, exposure apparatus and device manufacturing method
JP6137179B2 (ja) マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
KR101774607B1 (ko) 조명 광학 장치, 조명 방법, 및 노광 방법 및 장치
JP5706519B2 (ja) マイクロリソグラフィ投影露光装置の光学系
US20110063597A1 (en) Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method
CN108351598B (zh) 与偏振无关的量测系统
US8035803B2 (en) Subsystem of an illumination system of a microlithographic projection exposure apparatus
US20140293254A1 (en) Illumination optical device, optical unit, illumination method, and exposure method and device
JP2010161364A (ja) レーザデバイス
JP2016503186A5 (enExample)
JP5928653B2 (ja) マイクロリソグラフィ投影露光装置の光学系
KR20080022193A (ko) 리소그래피 투영 시스템 및 투영 렌즈 편광 센서
TW202301035A (zh) 照明光學系統、曝光裝置及平板顯示器之製造方法
WO2013042679A1 (ja) 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
KR20150092285A (ko) 마이크로리소그래픽 투영 노광 장치의 광학 시스템
WO2013056981A1 (en) Microlithographic exposure method and illumination device
KR20060099698A (ko) Ｅｕｖ 리소그래피 방법 및 장치

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees