TWI340974B - Sputtering target and manufacturing method therefor, and recordable optical recording medium - Google Patents

Sputtering target and manufacturing method therefor, and recordable optical recording medium

Info

Publication number
TWI340974B
TWI340974B TW096107012A TW96107012A TWI340974B TW I340974 B TWI340974 B TW I340974B TW 096107012 A TW096107012 A TW 096107012A TW 96107012 A TW96107012 A TW 96107012A TW I340974 B TWI340974 B TW I340974B
Authority
TW
Taiwan
Prior art keywords
manufacturing
recording medium
optical recording
sputtering target
method therefor
Prior art date
Application number
TW096107012A
Other languages
English (en)
Other versions
TW200820252A (en
Inventor
Yoshitaka Hayashi
Noboru Sasa
Toshishige Fujii
Masayuki Fujiwara
Hiroshi Miura
Masaki Kato
Takeshi Kibe
Shinya Narumi
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of TW200820252A publication Critical patent/TW200820252A/zh
Application granted granted Critical
Publication of TWI340974B publication Critical patent/TWI340974B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/2432—Oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
TW096107012A 2006-03-01 2007-03-01 Sputtering target and manufacturing method therefor, and recordable optical recording medium TWI340974B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006055120 2006-03-01
JP2006213972A JP4871062B2 (ja) 2006-03-01 2006-08-04 スパッタリングターゲット及びその製造方法、並びに追記型光記録媒体

Publications (2)

Publication Number Publication Date
TW200820252A TW200820252A (en) 2008-05-01
TWI340974B true TWI340974B (en) 2011-04-21

Family

ID=38518185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107012A TWI340974B (en) 2006-03-01 2007-03-01 Sputtering target and manufacturing method therefor, and recordable optical recording medium

Country Status (4)

Country Link
US (2) US7897535B2 (zh)
JP (1) JP4871062B2 (zh)
CN (1) CN101037766B (zh)
TW (1) TWI340974B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101017963B1 (ko) * 2006-08-01 2011-03-02 가부시키가이샤 리코 추기형 광 기록 매체 및 그 기록 방법
JP4764858B2 (ja) 2007-01-30 2011-09-07 株式会社リコー 光記録媒体、スパッタリングターゲット及びその製造方法
JP2008276900A (ja) 2007-04-02 2008-11-13 Ricoh Co Ltd 追記型光記録媒体
US20090022932A1 (en) * 2007-07-04 2009-01-22 Toshishige Fujii Optical recording medium
CN101689548B (zh) * 2008-05-08 2012-06-13 松下电器产业株式会社 非易失性存储元件、非易失性存储装置和向非易失性存储元件的数据写入方法
TWI425643B (zh) 2009-03-31 2014-02-01 Sony Corp 固態攝像裝置及其製造方法、攝像裝置和抗反射結構之製造方法
TWI483247B (zh) * 2009-04-29 2015-05-01 Cmc Magnetics Corp 製備可寫錄光記錄媒體記錄層之濺鍍靶材
US20120044749A1 (en) * 2009-11-02 2012-02-23 Shunsaku Muraoka Variable resistance nonvolatile storage device and method of forming memory cell
KR101079621B1 (ko) 2011-06-30 2011-11-03 박경일 타겟과 백킹 플레이트의 비접착식 체결구조
CN104561908A (zh) * 2014-12-31 2015-04-29 西南技术物理研究所 多波段高反射膜的制备方法
CN109231967B (zh) * 2018-10-15 2021-05-25 桂林理工大学 Bi2O3-B2O3二元体系微波介质陶瓷材料及其制备方法

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JPS5528530A (en) * 1978-08-17 1980-02-29 Matsushita Electric Ind Co Ltd Optical information recording method
JPS598618A (ja) 1982-06-30 1984-01-17 Res Dev Corp Of Japan ビスマス−ホウ素系非晶質化合物及びその製造法
JPH0757692B2 (ja) 1986-12-25 1995-06-21 旭化成工業株式会社 透光性磁性材料
JPH05169819A (ja) * 1990-09-06 1993-07-09 Hitachi Maxell Ltd 光情報記録媒体及び情報の記録再生方法並びに情報記録装置
JPH1192922A (ja) 1997-09-16 1999-04-06 Toshiba Corp 誘電体膜形成用スパッタリングターゲット、その製造方法および強誘電体メモリの製造方法
JP4007702B2 (ja) 1998-10-05 2007-11-14 株式会社フルヤ金属 薄膜形成用スパッタリングターゲット材およびそれを用いて形成されて成る薄膜、および光学記録媒体
JP4307767B2 (ja) 2001-03-07 2009-08-05 株式会社リコー 光情報記録媒体、及びこの媒体の情報記録方法
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JP2006248177A (ja) * 2005-03-14 2006-09-21 Ricoh Co Ltd 追記型光記録媒体
US7488526B2 (en) * 2005-11-22 2009-02-10 Ricoh Company, Ltd. Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor
US7976922B2 (en) * 2006-12-12 2011-07-12 Ricoh Company, Ltd. Optical recording medium
JP4764858B2 (ja) * 2007-01-30 2011-09-07 株式会社リコー 光記録媒体、スパッタリングターゲット及びその製造方法
JP2008276900A (ja) * 2007-04-02 2008-11-13 Ricoh Co Ltd 追記型光記録媒体

Also Published As

Publication number Publication date
US20070218239A1 (en) 2007-09-20
JP4871062B2 (ja) 2012-02-08
US20110143075A1 (en) 2011-06-16
CN101037766A (zh) 2007-09-19
US8124212B2 (en) 2012-02-28
US7897535B2 (en) 2011-03-01
JP2007261247A (ja) 2007-10-11
TW200820252A (en) 2008-05-01
CN101037766B (zh) 2011-03-02

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