TWI331814B - - Google Patents

Download PDF

Info

Publication number
TWI331814B
TWI331814B TW096105230A TW96105230A TWI331814B TW I331814 B TWI331814 B TW I331814B TW 096105230 A TW096105230 A TW 096105230A TW 96105230 A TW96105230 A TW 96105230A TW I331814 B TWI331814 B TW I331814B
Authority
TW
Taiwan
Prior art keywords
light
emitting
wafer
electrode
adhesive
Prior art date
Application number
TW096105230A
Other languages
English (en)
Other versions
TW200834968A (en
Inventor
Bily Wang
Jonnie Chuang
Original Assignee
Harvatek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvatek Corp filed Critical Harvatek Corp
Priority to TW096105230A priority Critical patent/TW200834968A/zh
Priority to US11/757,356 priority patent/US20080191235A1/en
Priority to US11/757,355 priority patent/US7749781B2/en
Publication of TW200834968A publication Critical patent/TW200834968A/zh
Application granted granted Critical
Publication of TWI331814B publication Critical patent/TWI331814B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

Γ331.814 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種發光二極體,尤指一種高散熱效能 的發光二極體。 【先前技術】 傳統的發光二極體(LED, light emitting diode)因 體積小、耗電量低、使壽命長,以逐漸取代傳統燈泡,被 廣泛的使用在紅綠燈號t志、汽車方向燈、手電筒、手機、 燈具及大型的戶外看板上。由於傳統單顆發光二極體的發 光允度有限,在運用上必須使用多顆發光二極體組成一個 高亮度的光源。如此一來,將造成製作上的複雜及成本的 增加。 因此,便有了高功率發光二極體的問世,該高功率發 光二極體可以產生極高亮度的光源,在運用上僅需要幾個 發光二極體即可達到照明及顯示時所需之亮度。由於高功 率發光二極體可產生極高亮度的光源,相對也造成有極高 的熱源。所以,在.高功率發光二極體製作時,皆在内部結 合一散熱體,藉由該散熱體將發光晶片所產生之熱源導出 以進行散熱,確保高功率發光二極體的使用壽命。 而目前高功率發光二極體内部結合有散熱體的如美國
專利第 6274924 號之「SURFACE MOUNTABLE LED PACKAGE」發明專利案,該專利案之發光二極體上製作 時,先製作一金屬框架’於金屬框架上成型有一充滿塑料 的座體’該座體中央形成—穿孔,將散熱體上的反射杯插 切 1.814 入該穿孔中’於反射杯内部製作有一絕 黏固-晶片後’再進行晶片與框架間焊接導结座上 座體上封裝一光學透鏡。 門斗接導線,以及再於 :於上述專利案的在發光晶片被點 源由散熱體導出,以達到有效散斤產生的熱 率發光二極體在製作步驟上複雜:且:運:二此種高功 加。 ^時及工序’也造成製作成本增 【發明内容】 本發=出T傳統高功率發光二極體製作上的缺失, 先-極體,且製作成本也大幅降低。敖山的發 目的’本發明之具高散熱之發光二極雜製 先備有一厚料金屬。 架,該支型技術’將厚料金屬成型有複數支 上形成= 電極及一第二電極,在第-電極 穿孔,於承载承载部上形成有一凹陷之凹槽及複數 形成有m ^相連有一導電接腳,該承載部的背面 電接腳部,而第二電極上形成有-焊接部及-導 電接聊^焊接部上具有碰穿孔。 中。將一發光晶片利用不導電黏膠黏固於第一電極之凹槽 將 兩導線焊接於發光晶片上,將兩導線一端分別! I £ 6 Γ331814 架焊接。 將各種膠體點膠於發光晶片、黏膠、導線及支架上。 再利用熱壓成型技術將塑料壓模形成具有封裝發光晶 片、黏膠、導線及支架的座體與透鏡。 【實施方式】 兹有關本發明之技術内容及詳細說明,現配合圖式說 明如下: 請參閱第一圖’係本發明之發光二極體的製作流程示 意圖。如圖所示:本發明之具高散熱之發光二極體製作方 法,首先在步驟10,先備有一厚料金屬。 在步驟20,利用蝕刻或沖壓成型技術,將厚料金屬成 型有複數相連之支架。 在步驟30,將一發光晶片利用黏膠黏固於支架上,以 完成固晶加工。在本圖式中,該黏膠為非導電性或具導電 性(銀膠或散熱膠)之任一種。 在步驟40,將兩導線焊接於發光晶片上,再將兩導線 分別與支架烊接’以完成打線加工。 在步驟50 ’將矽膠點膠於發光晶片上,以保護晶片, 於矽膠表面上點上環氧樹脂(如製作黃光發光二極體)混 合物於發光晶片 '黏膠、導線及支架上。若要製作白光的 發光二極體時,先於發光晶片上點上螢光膠體,再於螢光 膠體上點矽膠,接著以環氧樹脂點膠於矽膠上。 在步驟60,利用熱壓成型技術將混合物壓模形成圓 柱、半圓體或方形等之任一種的座體與透鏡,即完成一發

Claims (1)

1331814 申請專利範圍: 種具高散熱之發光二極體結構,包括有. 極上罝念架其上具有一第-電極及第二電極,該第-電 端ϋ 部’料載部上具有—凹槽,於承載部一 :第導電接聊’在承載部背面形成有-散熱凸部, 焊接部上具有㈣穿孔:導電接腳4承載部及 —黏膠’係設於該凹槽中; 一發光晶片,係固設於該黏膠上; 及,二導線,係與發光晶片及第一、二電極電性連結; 一外包覆體,係具有一 及焊接部之座體,並於該座 其申,在外包覆體包覆 接部後,使第一、二電極背 2、 如申請專利範圍第 架為一厚料金屬。 3、 如申請專利範圍第 膠係以非導電、銀膠或散熱 4、 如申請專利範圍第 包覆體内具有一内包覆體, 導線、黏膠。 5、 如t請專利範圍第 熱凸部係呈一圓形。 包覆承载部、發光晶片、導線 體上承接有一透鏡; 承載部、發光晶片、導線及焊 面外露。 1項所述之結構’其中,該支 1項所述之結構,其中,該黏 膠之任一種。 1項所述之結構,其中,該外 該内包覆體以包覆發光晶片、 1項所述之結構,其中,該散 12 1 9 卜.淳 覆體請專利範圍第1項所述之結構,以,該包 復體為裱氧樹脂混合物。 L如申請專利範圍第i項所述之結構,其中,該發 尤日日片為一發光二極體晶片。 ::如申請專利範圍第i項所述之結構,其中,該發 光阳片與内包覆體間夾設有一層螢光層。 9 : -種用於製作第1項之具高散熱之發光 二極體結 構之方法,該方法包括: a)、備有一厚料金屬; )將厚料金屬成型有第一、二電極之支架,該第一 電極上具有_承载部’該承載部上具有一凹槽及複數穿 :女於承載部一端相連有一導電接腳,且承載部的背面形 j-呈圓形之偏部’第二電極上形成有一焊接部及 導電接腳,於焊接部上具有複數穿孔; C)、在第一電極上塗佈一層黏膠; d) 、將發光晶片黏固黏膠上; 再將兩導線一端分 黏膠、導線及支架 e) 、將兩導線焊接於發光晶片上 別與第一、二電極電性連接; f )、於發光晶片、第一、二電極 上進行點膠; g)、利用熱壓模形成具有封裝發光晶片、黏膠、導線 及支架的薄形座體與透鏡。 10、如申請專利範圍第g項所述之方法,其中,在步 驟b係利用蝕刻或沖壓之任一種成型技術,將厚料金屬成 13 丄丄δ丄4 丄丄δ丄4
型有,一支架。 ^、如申請專利範圍第9項所述之方法, 驟c的黏膠係以非導電、銀膠或散熱膠之任—種。在^ 12、 如_請專·圍第9項所述之方法,其中 驟f的點膠疋於發光晶片點上砂膠以形成内包覆體,接著 於支架、發光晶片及導線及内包覆體表面包覆有—外包覆 體’該外包覆體為環氧樹脂混合物(Ep〇XYC〇Mp〇_),以熱 壓成型技術將混合物成型有一體成型之座體及透鏡。 13、 如申請專利範圍第9項所述之方法,其中,該發 光晶片為一發光二極體晶片。 14、如申請專利範圍第9項所述之方法,其中,在製 作白光之發光二極體時,於發光晶片上點上一螢光膠體, 再於螢光層點上矽膠,接著於支架、發光晶片及導線及矽 膠表面包覆有一環氧樹脂混合物(EPOXY COMPOUND),以熱 愿成型技術將混合物成型有一體成型之座體及透鏡。
TW096105230A 2007-02-13 2007-02-13 Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby TW200834968A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW096105230A TW200834968A (en) 2007-02-13 2007-02-13 Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby
US11/757,356 US20080191235A1 (en) 2007-02-13 2007-06-02 Light emitting diode structure with high heat dissipation
US11/757,355 US7749781B2 (en) 2007-02-13 2007-06-02 Method for manufacturing a light-emitting diode having high heat-dissipating efficiency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096105230A TW200834968A (en) 2007-02-13 2007-02-13 Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby

Publications (2)

Publication Number Publication Date
TW200834968A TW200834968A (en) 2008-08-16
TWI331814B true TWI331814B (zh) 2010-10-11

Family

ID=39685075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105230A TW200834968A (en) 2007-02-13 2007-02-13 Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby

Country Status (2)

Country Link
US (2) US20080191235A1 (zh)
TW (1) TW200834968A (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405147B2 (en) * 2004-01-30 2008-07-29 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
TW200834968A (en) * 2007-02-13 2008-08-16 Harvatek Corp Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby
KR100998233B1 (ko) * 2007-12-03 2010-12-07 서울반도체 주식회사 슬림형 led 패키지
US20090191669A1 (en) * 2008-01-24 2009-07-30 Peng Yu-Kang Method of encapsulating an electronic component
TW200939869A (en) * 2008-03-05 2009-09-16 Harvatek Corp An LED chip package structure with a high-efficiency heat-dissipating substrate and packaging method thereof
TWI483418B (zh) 2009-04-09 2015-05-01 Lextar Electronics Corp 發光二極體封裝方法
US8089075B2 (en) * 2009-04-17 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LFCC package with a reflector cup surrounded by a single encapsulant
US8101955B2 (en) * 2009-04-17 2012-01-24 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC package with a reflector cup surrounded by an encapsulant
US20100270580A1 (en) * 2009-04-22 2010-10-28 Jason Loomis Posselt Substrate based light source package with electrical leads
TW201123412A (en) * 2009-12-30 2011-07-01 Harvatek Corp A light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof
CN102130266B (zh) * 2010-01-20 2013-08-28 光宝电子(广州)有限公司 封装结构及发光二极管封装结构
TW201210087A (en) * 2010-08-17 2012-03-01 Lextar Electronics Corp Point light source and light source module using the same
EP2466655A1 (en) * 2010-12-14 2012-06-20 Liang Meng Plastic Share Co. Ltd. LED package structure and manufacturing method for the same
CN103022275B (zh) * 2011-09-23 2015-05-20 赛恩倍吉科技顾问(深圳)有限公司 发光二极管的封装方法
US8563337B2 (en) * 2011-10-24 2013-10-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Simultaneous silicone dispension on coupler
CN103187409A (zh) * 2011-12-31 2013-07-03 刘胜 基于引线框架的led阵列封装光源模块
CN103378252B (zh) 2012-04-16 2016-01-06 展晶科技(深圳)有限公司 发光二极管模组
JP6303738B2 (ja) * 2013-04-12 2018-04-04 日亜化学工業株式会社 発光装置
CN106328642A (zh) * 2016-10-18 2017-01-11 深圳成光兴光电技术股份有限公司 一种混合光源贴片led
CN108538989A (zh) * 2018-06-23 2018-09-14 江苏罗化新材料有限公司 一种高光效单面发光csp led灯珠及其制造方法
CN112635646B (zh) * 2021-01-14 2021-10-01 深圳市科润光电股份有限公司 一种应用于低热阻的晶圆级led封装结构
CN114038978B (zh) * 2021-09-15 2023-07-07 深圳市华笙光电子有限公司 一种圆片级玻璃型腔的硅通孔led封装结构

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962971A (en) * 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
KR100425566B1 (ko) * 1999-06-23 2004-04-01 가부시키가이샤 시티즌 덴시 발광 다이오드
JP2001144331A (ja) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
US6299498B1 (en) * 1999-10-27 2001-10-09 Shin Lung Liu White-light emitting diode structure and manufacturing method
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
US7268479B2 (en) * 2001-02-15 2007-09-11 Integral Technologies, Inc. Low cost lighting circuits manufactured from conductive loaded resin-based materials
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
JP4114331B2 (ja) * 2001-06-15 2008-07-09 豊田合成株式会社 発光装置
US6924596B2 (en) * 2001-11-01 2005-08-02 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
US6917057B2 (en) * 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
DE112004000155B4 (de) * 2003-01-16 2019-06-19 Panasonic Intellectual Property Management Co., Ltd. Anschlussrahmen für ein Halbleiterbauelement
US6841934B2 (en) * 2003-02-26 2005-01-11 Harvatek Corporation White light source from light emitting diode
JP4029843B2 (ja) * 2004-01-19 2008-01-09 豊田合成株式会社 発光装置
EP1605028B1 (en) * 2003-03-13 2016-12-07 Nichia Corporation Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device
TW594950B (en) * 2003-03-18 2004-06-21 United Epitaxy Co Ltd Light emitting diode and package scheme and method thereof
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
EP1693904B1 (en) * 2005-02-18 2020-03-25 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
WO2007058514A1 (en) * 2005-11-21 2007-05-24 Seoul Semiconductor Co., Ltd. Light emitting element
TW200834968A (en) * 2007-02-13 2008-08-16 Harvatek Corp Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby
US20080246397A1 (en) * 2007-04-04 2008-10-09 Bily Wang Manufacturing method of white light led and structure thereof

Also Published As

Publication number Publication date
TW200834968A (en) 2008-08-16
US20080191235A1 (en) 2008-08-14
US7749781B2 (en) 2010-07-06
US20080194048A1 (en) 2008-08-14

Similar Documents

Publication Publication Date Title
TWI331814B (zh)
TWI332067B (zh)
US7679099B2 (en) Low thermal resistance high power LED
EP2107620B1 (en) Light emitting device with LED chip
JP5503760B1 (ja) 光源装置およびこれを備える照明装置、光源装置の製造方法
CN201363572Y (zh) 一种led光源模块
JP4802304B2 (ja) 半導体発光モジュール、およびその製造方法
JP2007049167A (ja) 一体型のレンズを備えるplccパッケージ及びそのパッケージを作製するための方法
JP2007214522A (ja) 光源装置及びこれを用いた照明装置
TW200832752A (en) Light emitting diode package and manufacturing method thereof
JP2011071242A (ja) 発光装置及び照明装置
CN111457260A (zh) 发光组件及制作方法
TW200843135A (en) Method of packaging light emitting diode with high heat-dissipating efficiency and the structure thereof
CN201868429U (zh) 一种内嵌式发光二极管封装结构
CN102064247A (zh) 一种内嵌式发光二极管封装方法及封装结构
TW201123562A (en) A light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof
TW201236137A (en) Multi-dimensional solid state lighting device array system and associated methods and structures
TWI452742B (zh) 發光二極體封裝結構及其製造方法
US9209373B2 (en) High power plastic leaded chip carrier with integrated metal reflector cup and direct heat sink
KR100699161B1 (ko) 발광 소자 패키지 및 그의 제조 방법
WO2019148934A1 (zh) 灯具、直插式led灯珠及制造方法
TW200905912A (en) Light emitting diode packaging structure and manufacturing method thereof
TW201403870A (zh) 發光二極體元件及其封裝方法
TW201123411A (en) A light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof
TW201244056A (en) Light emitting diode module package structure