TWI331814B - - Google Patents
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- TWI331814B TWI331814B TW096105230A TW96105230A TWI331814B TW I331814 B TWI331814 B TW I331814B TW 096105230 A TW096105230 A TW 096105230A TW 96105230 A TW96105230 A TW 96105230A TW I331814 B TWI331814 B TW I331814B
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- Prior art keywords
- light
- emitting
- wafer
- electrode
- adhesive
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000002923 oximes Chemical class 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920002379 silicone rubber Polymers 0.000 claims 1
- 239000004945 silicone rubber Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Γ331.814 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種發光二極體,尤指一種高散熱效能 的發光二極體。 【先前技術】 傳統的發光二極體(LED, light emitting diode)因 體積小、耗電量低、使壽命長,以逐漸取代傳統燈泡,被 廣泛的使用在紅綠燈號t志、汽車方向燈、手電筒、手機、 燈具及大型的戶外看板上。由於傳統單顆發光二極體的發 光允度有限,在運用上必須使用多顆發光二極體組成一個 高亮度的光源。如此一來,將造成製作上的複雜及成本的 增加。 因此,便有了高功率發光二極體的問世,該高功率發 光二極體可以產生極高亮度的光源,在運用上僅需要幾個 發光二極體即可達到照明及顯示時所需之亮度。由於高功 率發光二極體可產生極高亮度的光源,相對也造成有極高 的熱源。所以,在.高功率發光二極體製作時,皆在内部結 合一散熱體,藉由該散熱體將發光晶片所產生之熱源導出 以進行散熱,確保高功率發光二極體的使用壽命。 而目前高功率發光二極體内部結合有散熱體的如美國
專利第 6274924 號之「SURFACE MOUNTABLE LED PACKAGE」發明專利案,該專利案之發光二極體上製作 時,先製作一金屬框架’於金屬框架上成型有一充滿塑料 的座體’該座體中央形成—穿孔,將散熱體上的反射杯插 切 1.814 入該穿孔中’於反射杯内部製作有一絕 黏固-晶片後’再進行晶片與框架間焊接導结座上 座體上封裝一光學透鏡。 門斗接導線,以及再於 :於上述專利案的在發光晶片被點 源由散熱體導出,以達到有效散斤產生的熱 率發光二極體在製作步驟上複雜:且:運:二此種高功 加。 ^時及工序’也造成製作成本增 【發明内容】 本發=出T傳統高功率發光二極體製作上的缺失, 先-極體,且製作成本也大幅降低。敖山的發 目的’本發明之具高散熱之發光二極雜製 先備有一厚料金屬。 架,該支型技術’將厚料金屬成型有複數支 上形成= 電極及一第二電極,在第-電極 穿孔,於承载承载部上形成有一凹陷之凹槽及複數 形成有m ^相連有一導電接腳,該承載部的背面 電接腳部,而第二電極上形成有-焊接部及-導 電接聊^焊接部上具有碰穿孔。 中。將一發光晶片利用不導電黏膠黏固於第一電極之凹槽 將 兩導線焊接於發光晶片上,將兩導線一端分別! I £ 6 Γ331814 架焊接。 將各種膠體點膠於發光晶片、黏膠、導線及支架上。 再利用熱壓成型技術將塑料壓模形成具有封裝發光晶 片、黏膠、導線及支架的座體與透鏡。 【實施方式】 兹有關本發明之技術内容及詳細說明,現配合圖式說 明如下: 請參閱第一圖’係本發明之發光二極體的製作流程示 意圖。如圖所示:本發明之具高散熱之發光二極體製作方 法,首先在步驟10,先備有一厚料金屬。 在步驟20,利用蝕刻或沖壓成型技術,將厚料金屬成 型有複數相連之支架。 在步驟30,將一發光晶片利用黏膠黏固於支架上,以 完成固晶加工。在本圖式中,該黏膠為非導電性或具導電 性(銀膠或散熱膠)之任一種。 在步驟40,將兩導線焊接於發光晶片上,再將兩導線 分別與支架烊接’以完成打線加工。 在步驟50 ’將矽膠點膠於發光晶片上,以保護晶片, 於矽膠表面上點上環氧樹脂(如製作黃光發光二極體)混 合物於發光晶片 '黏膠、導線及支架上。若要製作白光的 發光二極體時,先於發光晶片上點上螢光膠體,再於螢光 膠體上點矽膠,接著以環氧樹脂點膠於矽膠上。 在步驟60,利用熱壓成型技術將混合物壓模形成圓 柱、半圓體或方形等之任一種的座體與透鏡,即完成一發
Claims (1)
1331814 申請專利範圍: 種具高散熱之發光二極體結構,包括有. 極上罝念架其上具有一第-電極及第二電極,該第-電 端ϋ 部’料載部上具有—凹槽,於承載部一 :第導電接聊’在承載部背面形成有-散熱凸部, 焊接部上具有㈣穿孔:導電接腳4承載部及 —黏膠’係設於該凹槽中; 一發光晶片,係固設於該黏膠上; 及,二導線,係與發光晶片及第一、二電極電性連結; 一外包覆體,係具有一 及焊接部之座體,並於該座 其申,在外包覆體包覆 接部後,使第一、二電極背 2、 如申請專利範圍第 架為一厚料金屬。 3、 如申請專利範圍第 膠係以非導電、銀膠或散熱 4、 如申請專利範圍第 包覆體内具有一内包覆體, 導線、黏膠。 5、 如t請專利範圍第 熱凸部係呈一圓形。 包覆承载部、發光晶片、導線 體上承接有一透鏡; 承載部、發光晶片、導線及焊 面外露。 1項所述之結構’其中,該支 1項所述之結構,其中,該黏 膠之任一種。 1項所述之結構,其中,該外 該内包覆體以包覆發光晶片、 1項所述之結構,其中,該散 12 1 9 卜.淳 覆體請專利範圍第1項所述之結構,以,該包 復體為裱氧樹脂混合物。 L如申請專利範圍第i項所述之結構,其中,該發 尤日日片為一發光二極體晶片。 ::如申請專利範圍第i項所述之結構,其中,該發 光阳片與内包覆體間夾設有一層螢光層。 9 : -種用於製作第1項之具高散熱之發光 二極體結 構之方法,該方法包括: a)、備有一厚料金屬; )將厚料金屬成型有第一、二電極之支架,該第一 電極上具有_承载部’該承載部上具有一凹槽及複數穿 :女於承載部一端相連有一導電接腳,且承載部的背面形 j-呈圓形之偏部’第二電極上形成有一焊接部及 導電接腳,於焊接部上具有複數穿孔; C)、在第一電極上塗佈一層黏膠; d) 、將發光晶片黏固黏膠上; 再將兩導線一端分 黏膠、導線及支架 e) 、將兩導線焊接於發光晶片上 別與第一、二電極電性連接; f )、於發光晶片、第一、二電極 上進行點膠; g)、利用熱壓模形成具有封裝發光晶片、黏膠、導線 及支架的薄形座體與透鏡。 10、如申請專利範圍第g項所述之方法,其中,在步 驟b係利用蝕刻或沖壓之任一種成型技術,將厚料金屬成 13 丄丄δ丄4 丄丄δ丄4
型有,一支架。 ^、如申請專利範圍第9項所述之方法, 驟c的黏膠係以非導電、銀膠或散熱膠之任—種。在^ 12、 如_請專·圍第9項所述之方法,其中 驟f的點膠疋於發光晶片點上砂膠以形成内包覆體,接著 於支架、發光晶片及導線及内包覆體表面包覆有—外包覆 體’該外包覆體為環氧樹脂混合物(Ep〇XYC〇Mp〇_),以熱 壓成型技術將混合物成型有一體成型之座體及透鏡。 13、 如申請專利範圍第9項所述之方法,其中,該發 光晶片為一發光二極體晶片。 14、如申請專利範圍第9項所述之方法,其中,在製 作白光之發光二極體時,於發光晶片上點上一螢光膠體, 再於螢光層點上矽膠,接著於支架、發光晶片及導線及矽 膠表面包覆有一環氧樹脂混合物(EPOXY COMPOUND),以熱 愿成型技術將混合物成型有一體成型之座體及透鏡。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096105230A TW200834968A (en) | 2007-02-13 | 2007-02-13 | Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby |
US11/757,356 US20080191235A1 (en) | 2007-02-13 | 2007-06-02 | Light emitting diode structure with high heat dissipation |
US11/757,355 US7749781B2 (en) | 2007-02-13 | 2007-06-02 | Method for manufacturing a light-emitting diode having high heat-dissipating efficiency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096105230A TW200834968A (en) | 2007-02-13 | 2007-02-13 | Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby |
Publications (2)
Publication Number | Publication Date |
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TW200834968A TW200834968A (en) | 2008-08-16 |
TWI331814B true TWI331814B (zh) | 2010-10-11 |
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ID=39685075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW096105230A TW200834968A (en) | 2007-02-13 | 2007-02-13 | Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby |
Country Status (2)
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US (2) | US20080191235A1 (zh) |
TW (1) | TW200834968A (zh) |
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TW200834968A (en) * | 2007-02-13 | 2008-08-16 | Harvatek Corp | Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby |
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TWI483418B (zh) | 2009-04-09 | 2015-05-01 | Lextar Electronics Corp | 發光二極體封裝方法 |
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TW201123412A (en) * | 2009-12-30 | 2011-07-01 | Harvatek Corp | A light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof |
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-
2007
- 2007-02-13 TW TW096105230A patent/TW200834968A/zh unknown
- 2007-06-02 US US11/757,356 patent/US20080191235A1/en not_active Abandoned
- 2007-06-02 US US11/757,355 patent/US7749781B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200834968A (en) | 2008-08-16 |
US20080191235A1 (en) | 2008-08-14 |
US7749781B2 (en) | 2010-07-06 |
US20080194048A1 (en) | 2008-08-14 |
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