TWI327644B - Method and apparatus for controlling a fabrication process based on a measured electrical characteristic - Google Patents
Method and apparatus for controlling a fabrication process based on a measured electrical characteristic Download PDFInfo
- Publication number
- TWI327644B TWI327644B TW092126782A TW92126782A TWI327644B TW I327644 B TWI327644 B TW I327644B TW 092126782 A TW092126782 A TW 092126782A TW 92126782 A TW92126782 A TW 92126782A TW I327644 B TWI327644 B TW I327644B
- Authority
- TW
- Taiwan
- Prior art keywords
- parameter
- controller
- electrical
- tool
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 132
- 230000008569 process Effects 0.000 title claims description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000005498 polishing Methods 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 9
- 238000004886 process control Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims 3
- 239000003792 electrolyte Substances 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000513 principal component analysis Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JPKMSBNEOSCLEX-UHFFFAOYSA-N 1,2,3,4-tetraethyl-9h-fluorene Chemical compound C1=CC=C2C3=C(CC)C(CC)=C(CC)C(CC)=C3CC2=C1 JPKMSBNEOSCLEX-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002405 diagnostic procedure Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- General Factory Administration (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/262,620 US6912437B2 (en) | 2002-09-30 | 2002-09-30 | Method and apparatus for controlling a fabrication process based on a measured electrical characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200408807A TW200408807A (en) | 2004-06-01 |
| TWI327644B true TWI327644B (en) | 2010-07-21 |
Family
ID=32068258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092126782A TWI327644B (en) | 2002-09-30 | 2003-09-29 | Method and apparatus for controlling a fabrication process based on a measured electrical characteristic |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6912437B2 (enExample) |
| JP (1) | JP5214091B2 (enExample) |
| KR (1) | KR101165791B1 (enExample) |
| CN (1) | CN100345270C (enExample) |
| AU (1) | AU2003270675A1 (enExample) |
| DE (1) | DE10393371T5 (enExample) |
| GB (1) | GB2410377B (enExample) |
| TW (1) | TWI327644B (enExample) |
| WO (1) | WO2004032224A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004009516B4 (de) * | 2004-02-27 | 2010-04-22 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System zum Steuern eines Produktparameters eines Schaltungselements |
| US7117059B1 (en) * | 2005-04-18 | 2006-10-03 | Promos Technologies Inc. | Run-to-run control system and operating method of the same |
| KR100735012B1 (ko) * | 2006-01-23 | 2007-07-03 | 삼성전자주식회사 | 제품 파라미터들의 통계적 분포 특성을 평가하는 방법 |
| DE102007035833B3 (de) * | 2007-07-31 | 2009-03-12 | Advanced Micro Devices, Inc., Sunnyvale | Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung |
| US8338192B2 (en) * | 2008-05-13 | 2012-12-25 | Stmicroelectronics, Inc. | High precision semiconductor chip and a method to construct the semiconductor chip |
| US8606379B2 (en) * | 2008-09-29 | 2013-12-10 | Fisher-Rosemount Systems, Inc. | Method of generating a product recipe for execution in batch processing |
| US8224475B2 (en) * | 2009-03-13 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for advanced process control |
| US8112168B2 (en) * | 2009-07-29 | 2012-02-07 | Texas Instruments Incorporated | Process and method for a decoupled multi-parameter run-to-run controller |
| US20110195636A1 (en) * | 2010-02-11 | 2011-08-11 | United Microelectronics Corporation | Method for Controlling Polishing Wafer |
| KR101121858B1 (ko) * | 2010-04-27 | 2012-03-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US8832634B2 (en) * | 2012-09-05 | 2014-09-09 | Lsi Corporation | Integrated circuit characterization based on measured and static apparent resistances |
| JP2014053505A (ja) * | 2012-09-07 | 2014-03-20 | Toshiba Corp | 半導体装置の製造方法、半導体ウェーハ及び半導体装置の製造装置 |
| US9405289B2 (en) * | 2012-12-06 | 2016-08-02 | Tokyo Electron Limited | Method and apparatus for autonomous identification of particle contamination due to isolated process events and systematic trends |
| US9879968B2 (en) * | 2014-10-23 | 2018-01-30 | Caterpillar Inc. | Component measurement system having wavelength filtering |
| TWI553436B (zh) * | 2015-06-10 | 2016-10-11 | A control system that monitors and obtains production information through a remote mobile device | |
| KR20170136225A (ko) | 2016-06-01 | 2017-12-11 | 엘에스산전 주식회사 | 시뮬레이션 장치 |
| WO2019090122A1 (en) * | 2017-11-03 | 2019-05-09 | Tokyo Electron Limited | Enhancement of yield of functional microelectronic devices |
| US11244873B2 (en) * | 2018-10-31 | 2022-02-08 | Tokyo Electron Limited | Systems and methods for manufacturing microelectronic devices |
| CN113053767B (zh) * | 2021-03-09 | 2022-09-06 | 普迪飞半导体技术(上海)有限公司 | 栅极结构中氮化钛层厚度的确定方法、装置、设备与介质 |
| US11868119B2 (en) | 2021-09-24 | 2024-01-09 | Tokyo Electron Limited | Method and process using fingerprint based semiconductor manufacturing process fault detection |
| KR102760991B1 (ko) * | 2022-02-25 | 2025-01-24 | 포항공과대학교 산학협력단 | 반도체 파라미터 설정 장치 및 방법 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0706209A3 (en) * | 1994-10-06 | 1996-12-27 | Applied Materials Inc | Thin film resistance measurement |
| US5935877A (en) * | 1995-09-01 | 1999-08-10 | Applied Materials, Inc. | Etch process for forming contacts over titanium silicide |
| JP3727103B2 (ja) * | 1996-04-05 | 2005-12-14 | 三菱電機株式会社 | 半導体素子の試験方法 |
| JPH10173021A (ja) * | 1996-12-12 | 1998-06-26 | Mitsubishi Electric Corp | 製造ライン解析方法及び製造ライン解析装置 |
| US6041270A (en) * | 1997-12-05 | 2000-03-21 | Advanced Micro Devices, Inc. | Automatic recipe adjust and download based on process control window |
| US5969273A (en) | 1998-02-12 | 1999-10-19 | International Business Machines Corporation | Method and apparatus for critical dimension and tool resolution determination using edge width |
| JP4006081B2 (ja) * | 1998-03-19 | 2007-11-14 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP3230483B2 (ja) * | 1998-03-27 | 2001-11-19 | 日本電気株式会社 | 半導体装置におけるゲート絶縁膜の寿命試験方法 |
| US5998226A (en) | 1998-04-02 | 1999-12-07 | Lsi Logic Corporation | Method and system for alignment of openings in semiconductor fabrication |
| JP2000012638A (ja) * | 1998-06-22 | 2000-01-14 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP3897922B2 (ja) | 1998-12-15 | 2007-03-28 | 株式会社東芝 | 半導体装置の製造方法、及びコンピュ−タ読取り可能な記録媒体 |
| US6298470B1 (en) * | 1999-04-15 | 2001-10-02 | Micron Technology, Inc. | Method for efficient manufacturing of integrated circuits |
| KR100649387B1 (ko) * | 1999-06-22 | 2006-11-27 | 브룩스 오토메이션 인코퍼레이티드 | 초소형전자 제조에 사용하기 위한 공정수행 간 제어기 |
| US6284622B1 (en) * | 1999-10-25 | 2001-09-04 | Advanced Micro Devices, Inc. | Method for filling trenches |
| JP3910324B2 (ja) * | 1999-10-26 | 2007-04-25 | ファブソリューション株式会社 | 半導体製造装置 |
| JP2002203881A (ja) * | 2000-12-28 | 2002-07-19 | Shin Etsu Handotai Co Ltd | 半導体ウエーハ上のｍｏｓ型半導体装置の酸化膜信頼性特性評価方法 |
| US7201936B2 (en) * | 2001-06-19 | 2007-04-10 | Applied Materials, Inc. | Method of feedback control of sub-atmospheric chemical vapor deposition processes |
-
2002
- 2002-09-30 US US10/262,620 patent/US6912437B2/en not_active Expired - Lifetime
-
2003
- 2003-09-19 GB GB0505102A patent/GB2410377B/en not_active Expired - Lifetime
- 2003-09-19 JP JP2004541555A patent/JP5214091B2/ja not_active Expired - Lifetime
- 2003-09-19 AU AU2003270675A patent/AU2003270675A1/en not_active Abandoned
- 2003-09-19 KR KR1020057005288A patent/KR101165791B1/ko not_active Expired - Lifetime
- 2003-09-19 DE DE10393371T patent/DE10393371T5/de not_active Ceased
- 2003-09-19 CN CNB038233703A patent/CN100345270C/zh not_active Expired - Lifetime
- 2003-09-19 WO PCT/US2003/029037 patent/WO2004032224A1/en not_active Ceased
- 2003-09-29 TW TW092126782A patent/TWI327644B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB0505102D0 (en) | 2005-04-20 |
| KR20050055729A (ko) | 2005-06-13 |
| AU2003270675A1 (en) | 2004-04-23 |
| US20040093110A1 (en) | 2004-05-13 |
| GB2410377A (en) | 2005-07-27 |
| TW200408807A (en) | 2004-06-01 |
| DE10393371T5 (de) | 2005-10-20 |
| JP5214091B2 (ja) | 2013-06-19 |
| CN1685495A (zh) | 2005-10-19 |
| JP2006501674A (ja) | 2006-01-12 |
| KR101165791B1 (ko) | 2012-07-17 |
| US6912437B2 (en) | 2005-06-28 |
| GB2410377B (en) | 2006-08-16 |
| CN100345270C (zh) | 2007-10-24 |
| WO2004032224A1 (en) | 2004-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |