KR101165791B1 - 측정된 전기적 특성에 기초한 제조 공정 제어 방법 및 장치 - Google Patents

측정된 전기적 특성에 기초한 제조 공정 제어 방법 및 장치 Download PDF

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KR101165791B1
KR101165791B1 KR1020057005288A KR20057005288A KR101165791B1 KR 101165791 B1 KR101165791 B1 KR 101165791B1 KR 1020057005288 A KR1020057005288 A KR 1020057005288A KR 20057005288 A KR20057005288 A KR 20057005288A KR 101165791 B1 KR101165791 B1 KR 101165791B1
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electrical performance
recipe
feature
operating
forming
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KR20050055729A (ko
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로버트 제이. 총
진 왕
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • General Factory Administration (AREA)
KR1020057005288A 2002-09-30 2003-09-19 측정된 전기적 특성에 기초한 제조 공정 제어 방법 및 장치 Expired - Lifetime KR101165791B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/262,620 US6912437B2 (en) 2002-09-30 2002-09-30 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic
US10/262,620 2002-09-30
PCT/US2003/029037 WO2004032224A1 (en) 2002-09-30 2003-09-19 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic

Publications (2)

Publication Number Publication Date
KR20050055729A KR20050055729A (ko) 2005-06-13
KR101165791B1 true KR101165791B1 (ko) 2012-07-17

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KR1020057005288A Expired - Lifetime KR101165791B1 (ko) 2002-09-30 2003-09-19 측정된 전기적 특성에 기초한 제조 공정 제어 방법 및 장치

Country Status (9)

Country Link
US (1) US6912437B2 (enExample)
JP (1) JP5214091B2 (enExample)
KR (1) KR101165791B1 (enExample)
CN (1) CN100345270C (enExample)
AU (1) AU2003270675A1 (enExample)
DE (1) DE10393371T5 (enExample)
GB (1) GB2410377B (enExample)
TW (1) TWI327644B (enExample)
WO (1) WO2004032224A1 (enExample)

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DE102004009516B4 (de) * 2004-02-27 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System zum Steuern eines Produktparameters eines Schaltungselements
US7117059B1 (en) * 2005-04-18 2006-10-03 Promos Technologies Inc. Run-to-run control system and operating method of the same
KR100735012B1 (ko) * 2006-01-23 2007-07-03 삼성전자주식회사 제품 파라미터들의 통계적 분포 특성을 평가하는 방법
DE102007035833B3 (de) * 2007-07-31 2009-03-12 Advanced Micro Devices, Inc., Sunnyvale Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung
US8338192B2 (en) * 2008-05-13 2012-12-25 Stmicroelectronics, Inc. High precision semiconductor chip and a method to construct the semiconductor chip
US8606379B2 (en) * 2008-09-29 2013-12-10 Fisher-Rosemount Systems, Inc. Method of generating a product recipe for execution in batch processing
US8224475B2 (en) * 2009-03-13 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for advanced process control
US8112168B2 (en) * 2009-07-29 2012-02-07 Texas Instruments Incorporated Process and method for a decoupled multi-parameter run-to-run controller
US20110195636A1 (en) * 2010-02-11 2011-08-11 United Microelectronics Corporation Method for Controlling Polishing Wafer
KR101121858B1 (ko) * 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US8832634B2 (en) * 2012-09-05 2014-09-09 Lsi Corporation Integrated circuit characterization based on measured and static apparent resistances
JP2014053505A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法、半導体ウェーハ及び半導体装置の製造装置
US9405289B2 (en) * 2012-12-06 2016-08-02 Tokyo Electron Limited Method and apparatus for autonomous identification of particle contamination due to isolated process events and systematic trends
US9879968B2 (en) * 2014-10-23 2018-01-30 Caterpillar Inc. Component measurement system having wavelength filtering
TWI553436B (zh) * 2015-06-10 2016-10-11 A control system that monitors and obtains production information through a remote mobile device
KR20170136225A (ko) 2016-06-01 2017-12-11 엘에스산전 주식회사 시뮬레이션 장치
WO2019090122A1 (en) * 2017-11-03 2019-05-09 Tokyo Electron Limited Enhancement of yield of functional microelectronic devices
US11244873B2 (en) * 2018-10-31 2022-02-08 Tokyo Electron Limited Systems and methods for manufacturing microelectronic devices
CN113053767B (zh) * 2021-03-09 2022-09-06 普迪飞半导体技术(上海)有限公司 栅极结构中氮化钛层厚度的确定方法、装置、设备与介质
US11868119B2 (en) 2021-09-24 2024-01-09 Tokyo Electron Limited Method and process using fingerprint based semiconductor manufacturing process fault detection
KR102760991B1 (ko) * 2022-02-25 2025-01-24 포항공과대학교 산학협력단 반도체 파라미터 설정 장치 및 방법

Citations (1)

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Publication number Priority date Publication date Assignee Title
KR100332187B1 (ko) 1998-02-12 2002-04-12 포만 제프리 엘 공정의 모니터링 방법 및 그 장치

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EP0706209A3 (en) * 1994-10-06 1996-12-27 Applied Materials Inc Thin film resistance measurement
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法
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JP2000012638A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP3897922B2 (ja) 1998-12-15 2007-03-28 株式会社東芝 半導体装置の製造方法、及びコンピュ−タ読取り可能な記録媒体
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Also Published As

Publication number Publication date
GB0505102D0 (en) 2005-04-20
KR20050055729A (ko) 2005-06-13
AU2003270675A1 (en) 2004-04-23
US20040093110A1 (en) 2004-05-13
GB2410377A (en) 2005-07-27
TW200408807A (en) 2004-06-01
DE10393371T5 (de) 2005-10-20
JP5214091B2 (ja) 2013-06-19
CN1685495A (zh) 2005-10-19
JP2006501674A (ja) 2006-01-12
US6912437B2 (en) 2005-06-28
GB2410377B (en) 2006-08-16
TWI327644B (en) 2010-07-21
CN100345270C (zh) 2007-10-24
WO2004032224A1 (en) 2004-04-15

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