CN100345270C - 依据所检测的电特性控制制造过程的方法与装置 - Google Patents

依据所检测的电特性控制制造过程的方法与装置 Download PDF

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Publication number
CN100345270C
CN100345270C CNB038233703A CN03823370A CN100345270C CN 100345270 C CN100345270 C CN 100345270C CN B038233703 A CNB038233703 A CN B038233703A CN 03823370 A CN03823370 A CN 03823370A CN 100345270 C CN100345270 C CN 100345270C
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China
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parameter
controller
operating
characteristic
target value
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Expired - Lifetime
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CNB038233703A
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Chinese (zh)
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CN1685495A (zh
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R·J·钟
J·王
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • General Factory Administration (AREA)
CNB038233703A 2002-09-30 2003-09-19 依据所检测的电特性控制制造过程的方法与装置 Expired - Lifetime CN100345270C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/262,620 US6912437B2 (en) 2002-09-30 2002-09-30 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic
US10/262,620 2002-09-30

Publications (2)

Publication Number Publication Date
CN1685495A CN1685495A (zh) 2005-10-19
CN100345270C true CN100345270C (zh) 2007-10-24

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CNB038233703A Expired - Lifetime CN100345270C (zh) 2002-09-30 2003-09-19 依据所检测的电特性控制制造过程的方法与装置

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Country Link
US (1) US6912437B2 (enExample)
JP (1) JP5214091B2 (enExample)
KR (1) KR101165791B1 (enExample)
CN (1) CN100345270C (enExample)
AU (1) AU2003270675A1 (enExample)
DE (1) DE10393371T5 (enExample)
GB (1) GB2410377B (enExample)
TW (1) TWI327644B (enExample)
WO (1) WO2004032224A1 (enExample)

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US7117059B1 (en) * 2005-04-18 2006-10-03 Promos Technologies Inc. Run-to-run control system and operating method of the same
KR100735012B1 (ko) * 2006-01-23 2007-07-03 삼성전자주식회사 제품 파라미터들의 통계적 분포 특성을 평가하는 방법
DE102007035833B3 (de) * 2007-07-31 2009-03-12 Advanced Micro Devices, Inc., Sunnyvale Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung
US8338192B2 (en) * 2008-05-13 2012-12-25 Stmicroelectronics, Inc. High precision semiconductor chip and a method to construct the semiconductor chip
US8606379B2 (en) * 2008-09-29 2013-12-10 Fisher-Rosemount Systems, Inc. Method of generating a product recipe for execution in batch processing
US8224475B2 (en) * 2009-03-13 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for advanced process control
US8112168B2 (en) * 2009-07-29 2012-02-07 Texas Instruments Incorporated Process and method for a decoupled multi-parameter run-to-run controller
US20110195636A1 (en) * 2010-02-11 2011-08-11 United Microelectronics Corporation Method for Controlling Polishing Wafer
KR101121858B1 (ko) * 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US8832634B2 (en) * 2012-09-05 2014-09-09 Lsi Corporation Integrated circuit characterization based on measured and static apparent resistances
JP2014053505A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法、半導体ウェーハ及び半導体装置の製造装置
US9405289B2 (en) * 2012-12-06 2016-08-02 Tokyo Electron Limited Method and apparatus for autonomous identification of particle contamination due to isolated process events and systematic trends
US9879968B2 (en) * 2014-10-23 2018-01-30 Caterpillar Inc. Component measurement system having wavelength filtering
TWI553436B (zh) * 2015-06-10 2016-10-11 A control system that monitors and obtains production information through a remote mobile device
KR20170136225A (ko) 2016-06-01 2017-12-11 엘에스산전 주식회사 시뮬레이션 장치
WO2019090122A1 (en) * 2017-11-03 2019-05-09 Tokyo Electron Limited Enhancement of yield of functional microelectronic devices
US11244873B2 (en) * 2018-10-31 2022-02-08 Tokyo Electron Limited Systems and methods for manufacturing microelectronic devices
CN113053767B (zh) * 2021-03-09 2022-09-06 普迪飞半导体技术(上海)有限公司 栅极结构中氮化钛层厚度的确定方法、装置、设备与介质
US11868119B2 (en) 2021-09-24 2024-01-09 Tokyo Electron Limited Method and process using fingerprint based semiconductor manufacturing process fault detection
KR102760991B1 (ko) * 2022-02-25 2025-01-24 포항공과대학교 산학협력단 반도체 파라미터 설정 장치 및 방법

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US5998226A (en) * 1998-04-02 1999-12-07 Lsi Logic Corporation Method and system for alignment of openings in semiconductor fabrication
JP2000182917A (ja) * 1998-12-15 2000-06-30 Toshiba Corp 半導体装置の製造方法、半導体装置の製造システム、半導体装置製造システム用制御プログラムを記録したコンピュ−タ読取り可能な記録媒体及び半導体装置製造システム用制御に用いるデ−タを記録したコンピュ−タ読取り可能な記録媒体
CN1293824A (zh) * 1998-03-19 2001-05-02 株式会社日立制作所 制造半导体器件的方法

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EP0706209A3 (en) * 1994-10-06 1996-12-27 Applied Materials Inc Thin film resistance measurement
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法
JPH10173021A (ja) * 1996-12-12 1998-06-26 Mitsubishi Electric Corp 製造ライン解析方法及び製造ライン解析装置
US6041270A (en) * 1997-12-05 2000-03-21 Advanced Micro Devices, Inc. Automatic recipe adjust and download based on process control window
US5969273A (en) 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
JP3230483B2 (ja) * 1998-03-27 2001-11-19 日本電気株式会社 半導体装置におけるゲート絶縁膜の寿命試験方法
JP2000012638A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd 半導体集積回路装置の製造方法
US6298470B1 (en) * 1999-04-15 2001-10-02 Micron Technology, Inc. Method for efficient manufacturing of integrated circuits
KR100649387B1 (ko) * 1999-06-22 2006-11-27 브룩스 오토메이션 인코퍼레이티드 초소형전자 제조에 사용하기 위한 공정수행 간 제어기
US6284622B1 (en) * 1999-10-25 2001-09-04 Advanced Micro Devices, Inc. Method for filling trenches
JP3910324B2 (ja) * 1999-10-26 2007-04-25 ファブソリューション株式会社 半導体製造装置
JP2002203881A (ja) * 2000-12-28 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハ上のｍｏｓ型半導体装置の酸化膜信頼性特性評価方法
US7201936B2 (en) * 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293824A (zh) * 1998-03-19 2001-05-02 株式会社日立制作所 制造半导体器件的方法
US5998226A (en) * 1998-04-02 1999-12-07 Lsi Logic Corporation Method and system for alignment of openings in semiconductor fabrication
JP2000182917A (ja) * 1998-12-15 2000-06-30 Toshiba Corp 半導体装置の製造方法、半導体装置の製造システム、半導体装置製造システム用制御プログラムを記録したコンピュ−タ読取り可能な記録媒体及び半導体装置製造システム用制御に用いるデ−タを記録したコンピュ−タ読取り可能な記録媒体

Also Published As

Publication number Publication date
GB0505102D0 (en) 2005-04-20
KR20050055729A (ko) 2005-06-13
AU2003270675A1 (en) 2004-04-23
US20040093110A1 (en) 2004-05-13
GB2410377A (en) 2005-07-27
TW200408807A (en) 2004-06-01
DE10393371T5 (de) 2005-10-20
JP5214091B2 (ja) 2013-06-19
CN1685495A (zh) 2005-10-19
JP2006501674A (ja) 2006-01-12
KR101165791B1 (ko) 2012-07-17
US6912437B2 (en) 2005-06-28
GB2410377B (en) 2006-08-16
TWI327644B (en) 2010-07-21
WO2004032224A1 (en) 2004-04-15

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