JP5214091B2 - 測定で求めた電気的特性に基づいて製造プロセスを制御するための方法および装置 - Google Patents

測定で求めた電気的特性に基づいて製造プロセスを制御するための方法および装置 Download PDF

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JP5214091B2
JP5214091B2 JP2004541555A JP2004541555A JP5214091B2 JP 5214091 B2 JP5214091 B2 JP 5214091B2 JP 2004541555 A JP2004541555 A JP 2004541555A JP 2004541555 A JP2004541555 A JP 2004541555A JP 5214091 B2 JP5214091 B2 JP 5214091B2
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recipe
operation recipe
electrical performance
parameter
target value
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JP2006501674A (ja
JP2006501674A5 (enExample
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ジェイ． チョン ロバート
ワン ジン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • General Factory Administration (AREA)
JP2004541555A 2002-09-30 2003-09-19 測定で求めた電気的特性に基づいて製造プロセスを制御するための方法および装置 Expired - Lifetime JP5214091B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/262,620 US6912437B2 (en) 2002-09-30 2002-09-30 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic
US10/262,620 2002-09-30
PCT/US2003/029037 WO2004032224A1 (en) 2002-09-30 2003-09-19 Method and apparatus for controlling a fabrication process based on a measured electrical characteristic

Publications (3)

Publication Number Publication Date
JP2006501674A JP2006501674A (ja) 2006-01-12
JP2006501674A5 JP2006501674A5 (enExample) 2009-01-15
JP5214091B2 true JP5214091B2 (ja) 2013-06-19

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JP2004541555A Expired - Lifetime JP5214091B2 (ja) 2002-09-30 2003-09-19 測定で求めた電気的特性に基づいて製造プロセスを制御するための方法および装置

Country Status (9)

Country Link
US (1) US6912437B2 (enExample)
JP (1) JP5214091B2 (enExample)
KR (1) KR101165791B1 (enExample)
CN (1) CN100345270C (enExample)
AU (1) AU2003270675A1 (enExample)
DE (1) DE10393371T5 (enExample)
GB (1) GB2410377B (enExample)
TW (1) TWI327644B (enExample)
WO (1) WO2004032224A1 (enExample)

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DE102007035833B3 (de) * 2007-07-31 2009-03-12 Advanced Micro Devices, Inc., Sunnyvale Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung
US8338192B2 (en) * 2008-05-13 2012-12-25 Stmicroelectronics, Inc. High precision semiconductor chip and a method to construct the semiconductor chip
US8606379B2 (en) * 2008-09-29 2013-12-10 Fisher-Rosemount Systems, Inc. Method of generating a product recipe for execution in batch processing
US8224475B2 (en) * 2009-03-13 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for advanced process control
US8112168B2 (en) * 2009-07-29 2012-02-07 Texas Instruments Incorporated Process and method for a decoupled multi-parameter run-to-run controller
US20110195636A1 (en) * 2010-02-11 2011-08-11 United Microelectronics Corporation Method for Controlling Polishing Wafer
KR101121858B1 (ko) * 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US8832634B2 (en) * 2012-09-05 2014-09-09 Lsi Corporation Integrated circuit characterization based on measured and static apparent resistances
JP2014053505A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法、半導体ウェーハ及び半導体装置の製造装置
US9405289B2 (en) * 2012-12-06 2016-08-02 Tokyo Electron Limited Method and apparatus for autonomous identification of particle contamination due to isolated process events and systematic trends
US9879968B2 (en) * 2014-10-23 2018-01-30 Caterpillar Inc. Component measurement system having wavelength filtering
TWI553436B (zh) * 2015-06-10 2016-10-11 A control system that monitors and obtains production information through a remote mobile device
KR20170136225A (ko) 2016-06-01 2017-12-11 엘에스산전 주식회사 시뮬레이션 장치
WO2019090122A1 (en) * 2017-11-03 2019-05-09 Tokyo Electron Limited Enhancement of yield of functional microelectronic devices
US11244873B2 (en) * 2018-10-31 2022-02-08 Tokyo Electron Limited Systems and methods for manufacturing microelectronic devices
CN113053767B (zh) * 2021-03-09 2022-09-06 普迪飞半导体技术(上海)有限公司 栅极结构中氮化钛层厚度的确定方法、装置、设备与介质
US11868119B2 (en) 2021-09-24 2024-01-09 Tokyo Electron Limited Method and process using fingerprint based semiconductor manufacturing process fault detection
KR102760991B1 (ko) * 2022-02-25 2025-01-24 포항공과대학교 산학협력단 반도체 파라미터 설정 장치 및 방법

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US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法
JPH10173021A (ja) * 1996-12-12 1998-06-26 Mitsubishi Electric Corp 製造ライン解析方法及び製造ライン解析装置
US6041270A (en) * 1997-12-05 2000-03-21 Advanced Micro Devices, Inc. Automatic recipe adjust and download based on process control window
US5969273A (en) 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
JP4006081B2 (ja) * 1998-03-19 2007-11-14 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3230483B2 (ja) * 1998-03-27 2001-11-19 日本電気株式会社 半導体装置におけるゲート絶縁膜の寿命試験方法
US5998226A (en) 1998-04-02 1999-12-07 Lsi Logic Corporation Method and system for alignment of openings in semiconductor fabrication
JP2000012638A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP3897922B2 (ja) 1998-12-15 2007-03-28 株式会社東芝 半導体装置の製造方法、及びコンピュ−タ読取り可能な記録媒体
US6298470B1 (en) * 1999-04-15 2001-10-02 Micron Technology, Inc. Method for efficient manufacturing of integrated circuits
KR100649387B1 (ko) * 1999-06-22 2006-11-27 브룩스 오토메이션 인코퍼레이티드 초소형전자 제조에 사용하기 위한 공정수행 간 제어기
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JP3910324B2 (ja) * 1999-10-26 2007-04-25 ファブソリューション株式会社 半導体製造装置
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Also Published As

Publication number Publication date
GB0505102D0 (en) 2005-04-20
KR20050055729A (ko) 2005-06-13
AU2003270675A1 (en) 2004-04-23
US20040093110A1 (en) 2004-05-13
GB2410377A (en) 2005-07-27
TW200408807A (en) 2004-06-01
DE10393371T5 (de) 2005-10-20
CN1685495A (zh) 2005-10-19
JP2006501674A (ja) 2006-01-12
KR101165791B1 (ko) 2012-07-17
US6912437B2 (en) 2005-06-28
GB2410377B (en) 2006-08-16
TWI327644B (en) 2010-07-21
CN100345270C (zh) 2007-10-24
WO2004032224A1 (en) 2004-04-15

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