TWI326014B - A method for forming a resist pattern and a supercritical processing solvent for lithography process - Google Patents

A method for forming a resist pattern and a supercritical processing solvent for lithography process Download PDF

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Publication number
TWI326014B
TWI326014B TW095103332A TW95103332A TWI326014B TW I326014 B TWI326014 B TW I326014B TW 095103332 A TW095103332 A TW 095103332A TW 95103332 A TW95103332 A TW 95103332A TW I326014 B TWI326014 B TW I326014B
Authority
TW
Taiwan
Prior art keywords
supercritical
film
group
photoresist
forming
Prior art date
Application number
TW095103332A
Other languages
English (en)
Chinese (zh)
Other versions
TW200643646A (en
Inventor
Hideo Namatsu
Mitsuru Sato
Original Assignee
Nippon Telegraph & Telephone
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone, Tokyo Ohka Kogyo Co Ltd filed Critical Nippon Telegraph & Telephone
Publication of TW200643646A publication Critical patent/TW200643646A/zh
Application granted granted Critical
Publication of TWI326014B publication Critical patent/TWI326014B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
TW095103332A 2005-01-27 2006-01-27 A method for forming a resist pattern and a supercritical processing solvent for lithography process TWI326014B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005020451A JP4555698B2 (ja) 2005-01-27 2005-01-27 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200643646A TW200643646A (en) 2006-12-16
TWI326014B true TWI326014B (en) 2010-06-11

Family

ID=36740453

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095103332A TWI326014B (en) 2005-01-27 2006-01-27 A method for forming a resist pattern and a supercritical processing solvent for lithography process

Country Status (4)

Country Link
US (1) US8026047B2 (US08026047-20110927-C00030.png)
JP (1) JP4555698B2 (US08026047-20110927-C00030.png)
TW (1) TWI326014B (US08026047-20110927-C00030.png)
WO (1) WO2006080429A1 (US08026047-20110927-C00030.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5222111B2 (ja) * 2008-11-26 2013-06-26 東京応化工業株式会社 レジスト表面改質液及びこれを利用したレジストパターン形成方法
JP5395012B2 (ja) * 2010-08-23 2014-01-22 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法、フラーレン誘導体
KR101187375B1 (ko) * 2011-01-27 2012-10-05 부경대학교 산학협력단 반도체 기판의 실리콘 산화막의 식각방법
US11720033B2 (en) * 2021-03-05 2023-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Material management method and system

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206989B2 (ja) 1992-11-13 2001-09-10 富士写真フイルム株式会社 ポジ型感光性材料
JPH06230574A (ja) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
KR100234143B1 (ko) 1996-06-07 1999-12-15 미야즈 쥰이치로 레지스트 물질 및 그 제조 방법
JP3515326B2 (ja) 1996-06-07 2004-04-05 日本電信電話株式会社 レジスト組成物
JP2000089477A (ja) 1998-09-11 2000-03-31 Nec Corp レジストパターンの形成方法
JP3063745B2 (ja) * 1998-10-06 2000-07-12 日本電気株式会社 パターン形成されたレジスト膜の処理方法
JP2002341538A (ja) 2001-05-11 2002-11-27 Fuji Photo Film Co Ltd 電子線またはｘ線用ポジ型レジスト組成物
JP2003140359A (ja) * 2001-10-31 2003-05-14 Matsushita Electric Ind Co Ltd パターン形成方法
JP2003224050A (ja) * 2002-01-29 2003-08-08 Matsushita Electric Ind Co Ltd パターン形成方法
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
CN100335969C (zh) 2002-04-12 2007-09-05 东京毅力科创株式会社 减少多孔介电薄膜清洗期间损伤的处理方法
JP2003338452A (ja) * 2002-05-22 2003-11-28 Matsushita Electric Ind Co Ltd パターン形成方法
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
JP2004233953A (ja) 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP2004233954A (ja) 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法およびレジストパターン
JP2005202176A (ja) * 2004-01-16 2005-07-28 Hitachi Ltd パタン形成方法
US20050186515A1 (en) 2004-01-23 2005-08-25 Watkins James J. Structured materials and methods
JP3905890B2 (ja) * 2004-02-05 2007-04-18 日本電信電話株式会社 超臨界処理方法
US20060003271A1 (en) * 2004-06-30 2006-01-05 Clark Shan C Basic supercritical solutions for quenching and developing photoresists
KR100654802B1 (ko) * 2004-12-03 2006-12-08 삼성전자주식회사 잉크젯 프린트헤드 및 그 제조방법

Also Published As

Publication number Publication date
JP2006208735A (ja) 2006-08-10
TW200643646A (en) 2006-12-16
JP4555698B2 (ja) 2010-10-06
US20080124648A1 (en) 2008-05-29
WO2006080429A1 (ja) 2006-08-03
US8026047B2 (en) 2011-09-27

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