TWI324284B - - Google Patents
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- Publication number
- TWI324284B TWI324284B TW095137694A TW95137694A TWI324284B TW I324284 B TWI324284 B TW I324284B TW 095137694 A TW095137694 A TW 095137694A TW 95137694 A TW95137694 A TW 95137694A TW I324284 B TWI324284 B TW I324284B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- light
- moving
- irradiation
- laser light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 201
- 230000002093 peripheral effect Effects 0.000 claims description 128
- 230000007246 mechanism Effects 0.000 claims description 122
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 46
- 238000005286 illumination Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 230000007723 transport mechanism Effects 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 47
- 230000032258 transport Effects 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000010354 integration Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005321256 | 2005-11-04 | ||
| JP2006246265A JP4491444B2 (ja) | 2005-11-04 | 2006-09-12 | レーザビーム・紫外線照射周辺露光装置およびその方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200719102A TW200719102A (en) | 2007-05-16 |
| TWI324284B true TWI324284B (https=) | 2010-05-01 |
Family
ID=38209772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095137694A TW200719102A (en) | 2005-11-04 | 2006-10-13 | Laser beam/uv irradiation peripheral exposure apparatus, and method therefor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4491444B2 (https=) |
| KR (1) | KR100947079B1 (https=) |
| TW (1) | TW200719102A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011013512A (ja) * | 2009-07-03 | 2011-01-20 | Orc Manufacturing Co Ltd | 周辺露光装置 |
| CN110716392A (zh) * | 2018-07-12 | 2020-01-21 | 东莞市多普光电设备有限公司 | 一种基于可生产大型基板的半自动曝光机 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000294501A (ja) * | 1999-04-09 | 2000-10-20 | Nikon Corp | 周辺露光装置及び方法 |
| JP2000294500A (ja) * | 1999-04-09 | 2000-10-20 | Nikon Corp | 周辺露光装置及び方法 |
| JP3091460B1 (ja) * | 1999-12-10 | 2000-09-25 | 東レエンジニアリング株式会社 | 露光装置 |
| JP4342663B2 (ja) * | 1999-12-20 | 2009-10-14 | 株式会社オーク製作所 | 周辺露光装置 |
| JP2001201862A (ja) * | 2000-01-19 | 2001-07-27 | Nikon Corp | 周辺露光装置 |
| JP3321733B2 (ja) * | 2000-09-20 | 2002-09-09 | 東レエンジニアリング株式会社 | 露光装置 |
| JP2002223072A (ja) | 2001-01-24 | 2002-08-09 | Matsushita Electric Ind Co Ltd | 多層プリント配線板の製造方法およびその製造装置 |
| JP2002365811A (ja) * | 2001-06-08 | 2002-12-18 | Mitsubishi Corp | フォトレジスト塗布基板の露光方法及び装置 |
| JP3547418B2 (ja) * | 2001-10-25 | 2004-07-28 | 三菱商事株式会社 | レーザビームによる液晶パネルのマーキング方法及び装置 |
| JP4014031B2 (ja) | 2002-06-05 | 2007-11-28 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP4664102B2 (ja) * | 2005-03-18 | 2011-04-06 | 東レエンジニアリング株式会社 | 露光装置及び露光方法 |
-
2006
- 2006-09-12 JP JP2006246265A patent/JP4491444B2/ja not_active Expired - Fee Related
- 2006-10-13 TW TW095137694A patent/TW200719102A/zh not_active IP Right Cessation
- 2006-11-02 KR KR1020060108023A patent/KR100947079B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007148358A (ja) | 2007-06-14 |
| JP4491444B2 (ja) | 2010-06-30 |
| KR20070048612A (ko) | 2007-05-09 |
| TW200719102A (en) | 2007-05-16 |
| KR100947079B1 (ko) | 2010-03-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |