JP4491444B2 - レーザビーム・紫外線照射周辺露光装置およびその方法 - Google Patents

レーザビーム・紫外線照射周辺露光装置およびその方法 Download PDF

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Publication number
JP4491444B2
JP4491444B2 JP2006246265A JP2006246265A JP4491444B2 JP 4491444 B2 JP4491444 B2 JP 4491444B2 JP 2006246265 A JP2006246265 A JP 2006246265A JP 2006246265 A JP2006246265 A JP 2006246265A JP 4491444 B2 JP4491444 B2 JP 4491444B2
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JP
Japan
Prior art keywords
laser beam
substrate
irradiation
moving
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006246265A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007148358A (ja
Inventor
晴康 劔持
博明 佐藤
泰人 池田
昌人 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orc Manufacturing Co Ltd
Original Assignee
Orc Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orc Manufacturing Co Ltd filed Critical Orc Manufacturing Co Ltd
Priority to JP2006246265A priority Critical patent/JP4491444B2/ja
Priority to TW095137694A priority patent/TW200719102A/zh
Priority to KR1020060108023A priority patent/KR100947079B1/ko
Publication of JP2007148358A publication Critical patent/JP2007148358A/ja
Application granted granted Critical
Publication of JP4491444B2 publication Critical patent/JP4491444B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006246265A 2005-11-04 2006-09-12 レーザビーム・紫外線照射周辺露光装置およびその方法 Expired - Fee Related JP4491444B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006246265A JP4491444B2 (ja) 2005-11-04 2006-09-12 レーザビーム・紫外線照射周辺露光装置およびその方法
TW095137694A TW200719102A (en) 2005-11-04 2006-10-13 Laser beam/uv irradiation peripheral exposure apparatus, and method therefor
KR1020060108023A KR100947079B1 (ko) 2005-11-04 2006-11-02 레이저 빔·자외선조사 주변노광장치 및 그 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005321256 2005-11-04
JP2006246265A JP4491444B2 (ja) 2005-11-04 2006-09-12 レーザビーム・紫外線照射周辺露光装置およびその方法

Publications (2)

Publication Number Publication Date
JP2007148358A JP2007148358A (ja) 2007-06-14
JP4491444B2 true JP4491444B2 (ja) 2010-06-30

Family

ID=38209772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006246265A Expired - Fee Related JP4491444B2 (ja) 2005-11-04 2006-09-12 レーザビーム・紫外線照射周辺露光装置およびその方法

Country Status (3)

Country Link
JP (1) JP4491444B2 (https=)
KR (1) KR100947079B1 (https=)
TW (1) TW200719102A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011013512A (ja) * 2009-07-03 2011-01-20 Orc Manufacturing Co Ltd 周辺露光装置
CN110716392A (zh) * 2018-07-12 2020-01-21 东莞市多普光电设备有限公司 一种基于可生产大型基板的半自动曝光机

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294501A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP2000294500A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP3091460B1 (ja) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 露光装置
JP4342663B2 (ja) * 1999-12-20 2009-10-14 株式会社オーク製作所 周辺露光装置
JP2001201862A (ja) * 2000-01-19 2001-07-27 Nikon Corp 周辺露光装置
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP2002223072A (ja) 2001-01-24 2002-08-09 Matsushita Electric Ind Co Ltd 多層プリント配線板の製造方法およびその製造装置
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
JP4014031B2 (ja) 2002-06-05 2007-11-28 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4664102B2 (ja) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 露光装置及び露光方法

Also Published As

Publication number Publication date
JP2007148358A (ja) 2007-06-14
TWI324284B (https=) 2010-05-01
KR20070048612A (ko) 2007-05-09
TW200719102A (en) 2007-05-16
KR100947079B1 (ko) 2010-03-10

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