KR100947079B1 - 레이저 빔·자외선조사 주변노광장치 및 그 방법 - Google Patents

레이저 빔·자외선조사 주변노광장치 및 그 방법 Download PDF

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Publication number
KR100947079B1
KR100947079B1 KR1020060108023A KR20060108023A KR100947079B1 KR 100947079 B1 KR100947079 B1 KR 100947079B1 KR 1020060108023 A KR1020060108023 A KR 1020060108023A KR 20060108023 A KR20060108023 A KR 20060108023A KR 100947079 B1 KR100947079 B1 KR 100947079B1
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South Korea
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laser beam
substrate
moving
irradiation
peripheral
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English (en)
Korean (ko)
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KR20070048612A (ko
Inventor
하루야스 켄모츠
히로아키 사토
야스히토 이케다
마사토 모리
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가부시키가이샤 오크세이사쿠쇼
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060108023A 2005-11-04 2006-11-02 레이저 빔·자외선조사 주변노광장치 및 그 방법 Expired - Fee Related KR100947079B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00321256 2005-11-04
JP2005321256 2005-11-04
JP2006246265A JP4491444B2 (ja) 2005-11-04 2006-09-12 レーザビーム・紫外線照射周辺露光装置およびその方法
JPJP-P-2006-00246265 2006-09-12

Publications (2)

Publication Number Publication Date
KR20070048612A KR20070048612A (ko) 2007-05-09
KR100947079B1 true KR100947079B1 (ko) 2010-03-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060108023A Expired - Fee Related KR100947079B1 (ko) 2005-11-04 2006-11-02 레이저 빔·자외선조사 주변노광장치 및 그 방법

Country Status (3)

Country Link
JP (1) JP4491444B2 (https=)
KR (1) KR100947079B1 (https=)
TW (1) TW200719102A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011013512A (ja) * 2009-07-03 2011-01-20 Orc Manufacturing Co Ltd 周辺露光装置
CN110716392A (zh) * 2018-07-12 2020-01-21 东莞市多普光电设备有限公司 一种基于可生产大型基板的半自动曝光机

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002223072A (ja) 2001-01-24 2002-08-09 Matsushita Electric Ind Co Ltd 多層プリント配線板の製造方法およびその製造装置
JP2004014670A (ja) 2002-06-05 2004-01-15 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294501A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP2000294500A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP3091460B1 (ja) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 露光装置
JP4342663B2 (ja) * 1999-12-20 2009-10-14 株式会社オーク製作所 周辺露光装置
JP2001201862A (ja) * 2000-01-19 2001-07-27 Nikon Corp 周辺露光装置
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
JP4664102B2 (ja) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 露光装置及び露光方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002223072A (ja) 2001-01-24 2002-08-09 Matsushita Electric Ind Co Ltd 多層プリント配線板の製造方法およびその製造装置
JP2004014670A (ja) 2002-06-05 2004-01-15 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
JP2007148358A (ja) 2007-06-14
TWI324284B (https=) 2010-05-01
JP4491444B2 (ja) 2010-06-30
KR20070048612A (ko) 2007-05-09
TW200719102A (en) 2007-05-16

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