TWI323943B - Highly uniform group iii nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates - Google Patents

Highly uniform group iii nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates Download PDF

Info

Publication number
TWI323943B
TWI323943B TW095112665A TW95112665A TWI323943B TW I323943 B TWI323943 B TW I323943B TW 095112665 A TW095112665 A TW 095112665A TW 95112665 A TW95112665 A TW 95112665A TW I323943 B TWI323943 B TW I323943B
Authority
TW
Taiwan
Prior art keywords
layer
wafer
substrate
semiconductor structure
nitride
Prior art date
Application number
TW095112665A
Other languages
English (en)
Chinese (zh)
Other versions
TW200727478A (en
Inventor
Adam William Saxler
Edward Lloyd Hutchins
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200727478A publication Critical patent/TW200727478A/zh
Application granted granted Critical
Publication of TWI323943B publication Critical patent/TWI323943B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095112665A 2005-06-10 2006-04-10 Highly uniform group iii nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates TWI323943B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/149,664 US7405430B2 (en) 2005-06-10 2005-06-10 Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates

Publications (2)

Publication Number Publication Date
TW200727478A TW200727478A (en) 2007-07-16
TWI323943B true TWI323943B (en) 2010-04-21

Family

ID=36741324

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112665A TWI323943B (en) 2005-06-10 2006-04-10 Highly uniform group iii nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates

Country Status (5)

Country Link
US (2) US7405430B2 (enExample)
EP (1) EP1889297A1 (enExample)
JP (2) JP2008544486A (enExample)
TW (1) TWI323943B (enExample)
WO (1) WO2006135477A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501670B2 (en) * 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
DE102007026298A1 (de) * 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall
EP2045374A3 (en) * 2007-10-05 2011-02-16 Sumitomo Electric Industries, Ltd. Method of manufacturing a GaN substrate and a GaN epitaxial wafer
JP5018423B2 (ja) * 2007-11-20 2012-09-05 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶基板および半導体デバイス
JP5045388B2 (ja) * 2007-11-20 2012-10-10 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶の成長方法およびｉｉｉ族窒化物半導体結晶基板の製造方法
US8603243B2 (en) * 2008-07-31 2013-12-10 The United States Of America, As Represented By The Secretary Of The Navy Tracking carbon to silicon ratio in situ during silicon carbide growth
JP5404135B2 (ja) * 2009-03-31 2014-01-29 株式会社ブリヂストン 支持基板、貼り合わせ基板、支持基板の製造方法、及び貼り合わせ基板の製造方法
US8470652B1 (en) * 2011-05-11 2013-06-25 Hrl Laboratories, Llc Monolithic integration of group III nitride enhancement layers
US9057790B2 (en) 2011-09-30 2015-06-16 Saint-Gobain Ceramics & Plastics, Inc. Scintillation detection device with pressure sensitive adhesive interfaces
JP6158190B2 (ja) 2011-09-30 2017-07-05 サン‐ゴバン、クリストー、エ、デテクトゥールＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｒｉｓｔａｕｘ ＆ Ｄｅｔｅｃｔｅｕｒｓ 基板の形成方法
US8603898B2 (en) 2012-03-30 2013-12-10 Applied Materials, Inc. Method for forming group III/V conformal layers on silicon substrates
JP6322890B2 (ja) 2013-02-18 2018-05-16 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法
WO2014057748A1 (ja) * 2012-10-12 2014-04-17 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法
JP6154604B2 (ja) * 2012-12-07 2017-06-28 住友化学株式会社 窒化物半導体エピタキシャルウェハ
JP2014130951A (ja) * 2012-12-28 2014-07-10 Sumitomo Electric Ind Ltd 半導体装置
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
TWI549007B (zh) * 2013-02-07 2016-09-11 先知科技股份有限公司 製程參數的搜尋與分析方法及其電腦程式產品
US9923063B2 (en) 2013-02-18 2018-03-20 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
JP6136731B2 (ja) * 2013-08-06 2017-05-31 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
JP2023508691A (ja) * 2019-12-27 2023-03-03 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
US11942919B2 (en) * 2021-01-11 2024-03-26 Raytheon Company Strain compensated rare earth group III-nitride heterostructures
CN115662878A (zh) * 2022-10-14 2023-01-31 中环领先半导体材料有限公司 一种改善超重掺b衬底外延后warp的工艺方法
WO2024095448A1 (ja) * 2022-11-04 2024-05-10 住友電気工業株式会社 窒化ガリウム単結晶基板およびその製造方法
US20250257454A1 (en) * 2024-02-14 2025-08-14 Applied Materials, Inc. Side blocks for gas activation, and related processing chambers, process kits, and methods

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176772A (en) 1981-04-23 1982-10-30 Fujitsu Ltd Semiconductor device and manufacture thereof
US5196358A (en) 1989-12-29 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers
JP3376849B2 (ja) * 1997-03-17 2003-02-10 松下電器産業株式会社 半導体薄膜の製造方法
JP3372470B2 (ja) 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP2000082671A (ja) * 1998-06-26 2000-03-21 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法
JP2000174334A (ja) * 1998-12-02 2000-06-23 Mitsubishi Cable Ind Ltd ＧａＮ系半導体素子の製造方法
JP2001057463A (ja) * 1999-06-07 2001-02-27 Sharp Corp 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP3833431B2 (ja) * 2000-02-14 2006-10-11 独立行政法人科学技術振興機構 ＧａＮ／ＡｌＧａＮまたはＡｌＧａＮ／ＡｌＧａＮ量子井戸構造の形成方法
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
EP2400046A1 (en) * 2001-03-30 2011-12-28 Technologies and Devices International Inc. Method and apparatus for growing submicron group III nitride structures utilizing HVPE techniques
JP2002334843A (ja) * 2001-05-10 2002-11-22 Fuji Photo Film Co Ltd 半導体素子用基板の製造方法および半導体素子用基板ならびに半導体素子
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
JP3946969B2 (ja) * 2001-05-31 2007-07-18 日本碍子株式会社 電界効果トランジスタ、及びヘテロ接合型バイポーラトランジスタ
JP4183931B2 (ja) * 2001-06-11 2008-11-19 独立行政法人科学技術振興機構 無クラックＡｌＮまたはＡｌＧａＮの結晶成長方法。
CA2454269C (en) 2001-07-24 2015-07-07 Primit Parikh Insulating gate algan/gan hemt
JP2003059845A (ja) * 2001-08-20 2003-02-28 Osaka Gas Co Ltd 半導体素子および半導体成長方法
JP5013238B2 (ja) * 2001-09-11 2012-08-29 信越半導体株式会社 半導体多層構造
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP2003218127A (ja) * 2002-01-22 2003-07-31 Hitachi Cable Ltd 電界効果トランジスタ用エピタキシャルウェハ及び電界効果トランジスタ並びにその製造方法
JP2004096077A (ja) * 2002-07-08 2004-03-25 Sumitomo Chem Co Ltd 化合物半導体発光素子用エピタキシャル基板及びその製造方法並びに発光素子
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
JP2004200188A (ja) * 2002-12-16 2004-07-15 Shin Etsu Handotai Co Ltd ヘテロエピタキシャルウエーハおよびその製造方法
US7786503B2 (en) * 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer

Also Published As

Publication number Publication date
US20060278891A1 (en) 2006-12-14
EP1889297A1 (en) 2008-02-20
TW200727478A (en) 2007-07-16
US7662682B2 (en) 2010-02-16
US20080302298A1 (en) 2008-12-11
WO2006135477A1 (en) 2006-12-21
JP2008544486A (ja) 2008-12-04
US7405430B2 (en) 2008-07-29
JP2012142629A (ja) 2012-07-26

Similar Documents

Publication Publication Date Title
TWI323943B (en) Highly uniform group iii nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US10211296B2 (en) P-doping of group-III-nitride buffer layer structure on a heterosubstrate
US7253454B2 (en) High electron mobility transistor
US8415690B2 (en) Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
US20230290873A1 (en) High electron mobility transistor structure and method of manufacturing the same
WO2004066393A1 (ja) 半導体装置及びその製造方法
EP2290696B1 (en) Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
CN101517715A (zh) 半导体外延结晶基板的制造方法
CN103066103A (zh) 硅衬底上的iii族氮化物的衬底击穿电压改进方法
JP6173493B2 (ja) 半導体素子用のエピタキシャル基板およびその製造方法
TWI882241B (zh) 磊晶結構及其製造方法
TWI903105B (zh) 磊晶結構及其製造方法
TW202431379A (zh) 磊晶基板的製造方法及磊晶基板
WO2023109866A1 (zh) 半导体器件的外延结构及其制备方法、半导体器件
CN116936339A (zh) 半导体结构及其制备方法
CN120980910A (zh) 外延结构及其制备方法、半导体器件
WO2022177503A1 (en) Semiconductor apparatus and method for fabricating thereof
JP2023039743A (ja) 窒化物半導体基板の製造方法