TWI315809B - Method for forming a lithograohy pattern - Google Patents

Method for forming a lithograohy pattern

Info

Publication number
TWI315809B
TWI315809B TW095129897A TW95129897A TWI315809B TW I315809 B TWI315809 B TW I315809B TW 095129897 A TW095129897 A TW 095129897A TW 95129897 A TW95129897 A TW 95129897A TW I315809 B TWI315809 B TW I315809B
Authority
TW
Taiwan
Prior art keywords
lithograohy
pattern
forming
lithograohy pattern
Prior art date
Application number
TW095129897A
Other languages
English (en)
Other versions
TW200707083A (en
Inventor
Ching-Yu Chang
Chin-Hsiang Lin
Burn-Jeng Lin
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200707083A publication Critical patent/TW200707083A/zh
Application granted granted Critical
Publication of TWI315809B publication Critical patent/TWI315809B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095129897A 2005-08-15 2006-08-15 Method for forming a lithograohy pattern TWI315809B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70820805P 2005-08-15 2005-08-15
US11/426,233 US7482280B2 (en) 2005-08-15 2006-06-23 Method for forming a lithography pattern

Publications (2)

Publication Number Publication Date
TW200707083A TW200707083A (en) 2007-02-16
TWI315809B true TWI315809B (en) 2009-10-11

Family

ID=37737782

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129897A TWI315809B (en) 2005-08-15 2006-08-15 Method for forming a lithograohy pattern

Country Status (3)

Country Link
US (1) US7482280B2 (zh)
CN (1) CN100489665C (zh)
TW (1) TWI315809B (zh)

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US7759253B2 (en) * 2006-08-07 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and material for forming a double exposure lithography pattern
US7767570B2 (en) 2006-03-22 2010-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy vias for damascene process
US20080160459A1 (en) * 2006-12-28 2008-07-03 Benjamin Szu-Min Lin Method of forming a pattern
US7759242B2 (en) 2007-08-22 2010-07-20 Qimonda Ag Method of fabricating an integrated circuit
WO2009036192A1 (en) * 2007-09-13 2009-03-19 Applied Precision, Inc. Method of dispersing immersion liquid on a specimen substrate for high resolution imaging and lithographie
US8530147B2 (en) * 2007-11-21 2013-09-10 Macronix International Co., Ltd. Patterning process
US8048616B2 (en) 2008-03-12 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench in photolithography
WO2010010928A1 (ja) * 2008-07-24 2010-01-28 日産化学工業株式会社 コーティング組成物及びパターン形成方法
US8357617B2 (en) 2008-08-22 2013-01-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of patterning a metal gate of semiconductor device
JP4892025B2 (ja) * 2008-09-26 2012-03-07 株式会社東芝 インプリント方法
JP5275093B2 (ja) * 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
JP5275094B2 (ja) * 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
US8822347B2 (en) * 2009-04-27 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Wet soluble lithography
US8304179B2 (en) * 2009-05-11 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device using a modified photosensitive layer
US8101530B2 (en) * 2009-09-25 2012-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography patterning method
EP2608247A1 (en) 2011-12-21 2013-06-26 Imec EUV photoresist encapsulation
KR101903477B1 (ko) * 2012-01-11 2018-10-02 삼성전자주식회사 반도체 장치의 제조 방법
US8759220B1 (en) * 2013-02-28 2014-06-24 Shin-Etsu Chemical Co., Ltd. Patterning process
CA3171807A1 (en) * 2013-12-19 2015-06-25 Illumina, Inc. Substrates comprising nano-patterning surfaces and methods of preparing thereof
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US9281212B1 (en) 2014-10-17 2016-03-08 International Business Machines Corporation Dielectric tone inversion materials
US20160196968A1 (en) * 2015-01-06 2016-07-07 Macronix International Co., Ltd. Patterning method
KR102435855B1 (ko) * 2015-08-06 2022-08-25 삼성전자주식회사 하드 마스크 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US9941125B2 (en) 2015-08-31 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR20180058125A (ko) * 2016-11-23 2018-05-31 에스케이하이닉스 주식회사 임프린트 공정을 이용한 패턴 형성 방법
JP6800779B2 (ja) * 2017-03-06 2020-12-16 Hoya株式会社 転写用マスクの製造方法、および半導体デバイスの製造方法
US20180308687A1 (en) * 2017-04-24 2018-10-25 Lam Research Corporation Euv photopatterning and selective deposition for negative pattern mask
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN108417531A (zh) * 2018-03-02 2018-08-17 武汉新芯集成电路制造有限公司 一种接触孔的刻蚀方法
US10978301B2 (en) * 2018-08-31 2021-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Morphology of resist mask prior to etching
US11022885B2 (en) * 2018-08-31 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photosensitive middle layer
US10658190B2 (en) 2018-09-24 2020-05-19 International Business Machines Corporation Extreme ultraviolet lithography patterning with directional deposition
US11360384B2 (en) 2018-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating and servicing a photomask
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US10943791B2 (en) * 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern formation method and method for manufacturing a semiconductor device
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
US11215918B2 (en) * 2019-07-30 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of critical dimension control by oxygen and nitrogen plasma treatment in EUV mask
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CN113138530B (zh) * 2020-01-20 2024-06-04 苏州维业达科技有限公司 一种具有高深宽比的母版的制作方法、母版及其应用

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Also Published As

Publication number Publication date
TW200707083A (en) 2007-02-16
CN100489665C (zh) 2009-05-20
CN1916767A (zh) 2007-02-21
US7482280B2 (en) 2009-01-27
US20070037410A1 (en) 2007-02-15

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees