I313H 九、發明說明： 【發明所屬之技術領域】 本發明關於一種TFT基板檢查裝置，特別是關於在高 溫狀態下對導入至檢查裝置内的TFT基板進行檢查的TF丁 基板檢查裝置。 【先前技術】 已知悉，利用半導體製造裝置，可在真空狀態下對包 括護套加熱器（sheath heater)的基板等進行加熱（請參照曰 > 本專利早期公開第8 — 20868號公報）。 關於TFT基板檢查裝置，雖然TFT基板檢查通常是 在常溫下進行，但是期待通過在高溫狀態下進行TFT基板 檢查，可易於檢出在常溫下難以檢出的TFT基板缺陷，並 提高缺陷檢出的效率。 上述在高溫狀態下檢查TFT基板時，可考慮在檢查室 設置加熱單元，並利用加熱單元將已導入至檢查室内的 TFT基板加熱到特定温度，之後進行檢查。 | 採用南溫加熱益作為設置於檢查室的加熱單元時，可 將TFT基板以短時間從常溫加熱至特定的高溫狀態，但是 高溫加熱器必須具有較多的熱容量，因此需要較大的空 間。通常，基板檢查是在真空狀態下進行，為此，檢查室 為縮短排氣時間而設為僅有有限的空間，進而，於該有限 的空間内設置有荷電粒子束源、可移動地支持TFT基板的 平臺機構、及利用光束照射而對於從TFT基板所放出的二 次電子等進行檢查的檢出器等各種檢查用裝置。因此，難 6 I3131ffX，loc 以在此狹窄的空間内設置必須具有較大空間的高溫加熱 器。 ‘、 、…假設，於檢查室内設定有高溫加熱器之情形時，因檢 查室的空間被擴大，因此檢查室需要排氣時間，使得 基板的檢查時間延長，於TFT基板的基板製造線上，在生 產線上進行TFT基板檢查時，TFT基板的產量下降。 又，採用例如可安裝於檢查室内狹窄空間的小型加熱 器設為加熱單元時，因加熱器的熱容量較小，將已導入^ 檢查室内的TFT基板從常溫加熱至高溫狀態需要較長時 間，且與上述情形相同，TFT基板置檢查需要較長的時間， 方；TFT基板的基板製造線上，在生產線上進行TFT基板 松查日ί ’ TFT基板的產量下降。進而，济1通於力口熱單元的 大電流所產生的電場可能對電子束造成影響。… 因此’將TFT基板加熱至高溫並進行基板檢查時，存 在以下問題：TFT基板檢查需要較長時間；丁FT基板產量 下降；或者因電場導致電子束混亂。 【發明内容】 因此’本發明之目的在於解決上述先前的問題點，利 用TFT基板檢查裝置，以短時間於高溫下進行基板檢查。 一又’本發明之目的在於利用TFT基板I置於高溫下進 行基板檢查，而不會使其產量下降。 本毛明中’利用TFT基板檢查裝置，在將TFT基板 導入至檢查室内的前段時期進行預備加熱，並且於檢查室 僅對已加熱的基板加以保溫。藉此，無需於檢查室内進行 131 Sil^t^-doc 高溫加熱’可避免基板在檢查室内長時間滯留，因此能夠 以短時間進行檢查。又，亦可使設置於檢查室的加熱器小 型化。 本發明的TFT基板檢查裝置構成為，包括對已導入的 TFT基板進行基板檢查的檢查室、以及用以將TFT基板導 入至檢查室内的加載互鎖真空室（l〇ad_l〇ck chambe〗.），其中 加載互鎖真空室包括對所導入的TFT基板進行預備加熱的 加熱單元’檢查室包括對從加載互鎖真空室所導入的TFT 基板加以保溫的保溫單元。 根據上述構成，由於利用設置於加載互鎖真空室内的 加熱早7L對T F T基板進行預備加熱，而可將處於高溫狀態 I的TFT基板導人至檢查室内，故檢查室内可無需加熱至 门’皿的枝構X ’無需時間用以使檢查室升溫即可進行基 板檢查。 一人，不甲味發明的構成，由於在加載互鎖真空室内進 行預備加熱，於對弁箭道λ /+ a h 无引導入至檢查至内的TFT基板進行基 =Ϊ間，可將下一個丁打基板加熱至高溫，因此，可 :力、備加熱引起的檢查時間的累加，當預 檢查時間在高行:jΓ使用與通常相同的 下降的程二:t 中可在防止經過預備加熱的基板溫度 ，王又σ呆溫，因而小型的保溫單元便足夠。為 此’因要設置保溫單元 约马 在最小而要的知查至谷積的增加可控制 度。而且’可降低對檢查室中電子束的影響。 I313M2f, 又，加熱單元的熱容量大於保溫單元的熱容量，因此 可快速加熱TFT基板。 將TFT基板從加載互鎖真空室傳送至檢查室期間，已 在加載互鎖真空室中預備加熱的TFT基板之溫度有所下 降。本發明之加熱單元’可先預測從加載互鎖真空室傳送 至檢查室期間TFT基板之溫度下降量，並根據此溫度下降 量，將加熱單元的加熱設定溫度設定為高於保溫單元的保 溫設定溫度。藉由設定該加熱設定溫度及保溫設定溫度， 即使當TFT基板在傳送中溫度下降時，由於檢查室内僅對 TFT基板加以保溫，因此亦可進行高溫檢查。 本申請發明的TFT基板檢查裝置中，可使用加熱燈 為加熱單元，又，可使用薄膜加熱器或者護套加熱器 保溫單元。 ，、'、D°乍為 根據本發明，利用TFT基板檢查裝置，可使用短昨 於高溫下進行基板檢查。又，利用TFT基板裝置，可 溫下進行基板檢查而不降低其產量。 、高 【實施方式】 以下，對於本發明的實施形態，參照圖加以詳細說％ 圖1是用以說明本發明所述的TFT基板檢查裝置 ° 各0。TFT基板檢查裝置1包括檢查TFT基板9的檢杳戈 4、在外部與TFT基板檢查裝置1之間傳出傳入τρτ義至 9的加載互鎖真空室（ll室）2、以及在加載互鎖真空·^叛 與檢查室4之間傳送丁FT基板9的傳送室3。 <至2[Technical Field] The present invention relates to a TFT substrate inspection apparatus, and more particularly to a TF substrate inspection apparatus for inspecting a TFT substrate introduced into an inspection apparatus in a high temperature state. [Prior Art] It is known that a substrate or the like including a sheath heater can be heated in a vacuum state by using a semiconductor manufacturing apparatus (refer to Japanese Laid-Open Patent Publication No. 8-20868). In the TFT substrate inspection apparatus, the TFT substrate inspection is usually performed at a normal temperature. However, it is expected that the TFT substrate inspection can be easily performed at a high temperature, and the TFT substrate defects which are difficult to detect at normal temperature can be easily detected, and the defect detection can be improved. effectiveness. When the TFT substrate is inspected at a high temperature, it is conceivable to provide a heating unit in the inspection chamber, and the TFT substrate introduced into the inspection chamber is heated to a specific temperature by a heating unit, and then inspected. When the heating element is installed in the inspection room, the TFT substrate can be heated from a normal temperature to a specific high temperature for a short period of time. However, the high temperature heater must have a large heat capacity, so a large space is required. Usually, the substrate inspection is performed under a vacuum state. For this reason, the inspection chamber is provided with only a limited space for shortening the exhaust time, and further, a charged particle beam source is provided in the limited space, and the TFT is movably supported. Various inspection devices such as a platform mechanism of a substrate and a detector for inspecting secondary electrons emitted from a TFT substrate by irradiation with a light beam. Therefore, it is difficult to set a high temperature heater that must have a large space in this narrow space. ', ,... Assume that when the high temperature heater is set in the inspection room, the space of the inspection room is enlarged, so the inspection chamber needs the exhaust time, so that the inspection time of the substrate is prolonged, on the substrate manufacturing line of the TFT substrate, When the TFT substrate inspection is performed on the production line, the yield of the TFT substrate is lowered. Further, when a small heater that can be mounted in a narrow space in the inspection room is used as the heating unit, it takes a long time to heat the TFT substrate that has been introduced into the inspection chamber from a normal temperature to a high temperature state because the heat capacity of the heater is small. As in the above case, it takes a long time for the TFT substrate to be inspected. On the substrate manufacturing line of the TFT substrate, the TFT substrate is inspected on the production line, and the yield of the TFT substrate is lowered. Furthermore, the electric field generated by the large current flowing through the heat unit of the heat source may affect the electron beam. Therefore, when the TFT substrate is heated to a high temperature and the substrate is inspected, there are problems in that the TFT substrate inspection takes a long time; the FT substrate yield decreases; or the electron beam is disturbed by the electric field. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned problems and to perform substrate inspection in a short time at a high temperature using a TFT substrate inspection apparatus. Further, the object of the present invention is to perform substrate inspection by using the TFT substrate I at a high temperature without degrading the yield. In the present invention, the TFT substrate inspection apparatus performs preliminary heating in a period before the introduction of the TFT substrate into the inspection chamber, and only heats the heated substrate in the inspection chamber. Thereby, it is not necessary to perform 131 Sil^t^-doc high-temperature heating in the inspection room to prevent the substrate from being left in the inspection chamber for a long time, so that the inspection can be performed in a short time. Further, the heater provided in the inspection room can be made smaller. The TFT substrate inspection apparatus of the present invention includes an inspection chamber for performing substrate inspection on the introduced TFT substrate, and a load-locking vacuum chamber for introducing the TFT substrate into the inspection chamber (l〇ad_l〇ck chambe.) The charging unit that loads the interlocking vacuum chamber includes a heating unit that performs preliminary heating on the introduced TFT substrate. The inspection chamber includes an insulating unit that insulates the TFT substrate introduced from the loading interlocking vacuum chamber. According to the above configuration, since the TFT substrate is preliminarily heated by the heating provided in the load lock vacuum chamber 7 L early, the TFT substrate in the high temperature state I can be guided into the inspection chamber, so that it is not necessary to heat the door to the inside of the inspection chamber. The branch structure X' does not require time for the substrate to be inspected by warming the examination chamber. One person, the composition of the invention is not pre-heated in the load-locking vacuum chamber, and the base plate is not guided to the TFT substrate in the inspection arrow λ / + ah. The substrate is heated to a high temperature, so that the accumulation of the inspection time caused by the force and the heating can be performed, and when the pre-inspection time is at a high level: jΓ, the substrate which is subjected to the preliminary heating can be prevented by using the same descending process as the usual two: The temperature, Wang and σ stay warm, so a small insulation unit is enough. For this reason, because of the need to set the insulation unit, the horse is at the minimum and the knowledge is known to increase the controllability of the grain. Moreover, the effect on the electron beam in the examination room can be reduced. I313M2f, in addition, the heat capacity of the heating unit is larger than the heat capacity of the heat insulating unit, so that the TFT substrate can be quickly heated. During the transfer of the TFT substrate from the load lock chamber to the inspection chamber, the temperature of the TFT substrate which has been previously heated in the load lock chamber is lowered. The heating unit of the present invention can first predict the temperature drop of the TFT substrate during transfer from the load lock vacuum chamber to the inspection chamber, and set the heating set temperature of the heating unit to be higher than the heat preservation setting of the heat preservation unit according to the temperature drop amount. temperature. By setting the heating set temperature and the heat retention set temperature, even when the temperature of the TFT substrate is lowered during the transfer, since the TFT substrate is only kept warm in the inspection chamber, the high temperature inspection can be performed. In the TFT substrate inspection apparatus of the present invention, a heating lamp can be used as the heating unit, and a film heater or a sheath heater holding unit can be used. According to the present invention, the substrate inspection can be performed using a TFT substrate inspection apparatus at a high temperature. Further, with the TFT substrate device, the substrate inspection can be performed at a low temperature without lowering the yield. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a view showing the TFT substrate inspection apparatus of the present invention. The TFT substrate inspection apparatus 1 includes a inspection interlocking chamber 4 for inspecting the TFT substrate 9, and a load-locking vacuum chamber (ll chamber) 2 that transmits an incoming τρτ meaning to 9 between the outside and the TFT substrate inspection device 1, and is loaded with each other. The transfer chamber 3 of the FT substrate 9 is transferred between the lock vacuum and the inspection chamber 4. < to 2
I313H 加載互鎖真空室2包括加熱單元10 ,其在外部與傳送 室3之間導出導入TFT基板9、並且對所導入的TFT基板 9進行預備加熱。加熱單元1〇是利用較大熱容量，將導入 至力_口=鎖真空室2内的TFT基板9，從常溫快速加熱至 進行尚脈彳致查日寸所需的特定高溫狀態的加熱元，可使用 例如IR燈。The I313H load lock chamber 2 includes a heating unit 10 which is guided between the outside and the transfer chamber 3 to be introduced into the TFT substrate 9, and the lead TFT substrate 9 is preheated. The heating unit 1A is a heating element that is introduced into the TFT substrate 9 in the force_port=lock vacuum chamber 2 by a large heat capacity, and is heated from a normal temperature to a specific high temperature state required for the inspection of the day. For example, an IR lamp can be used.
傳送室3疋在加載互鎖真空室2與檢查室4之間傳送 TFT基板9的單元，可使用例如傳送卿人^者，未必 需要傳送室3，可將傳送機器人設置於加載直空室2 内或者檢查室4内。 ' 〃 ^ 對基板9進行基板檢查的機 =卜’亦包括將TFT基板保持於高溫狀態的保溫單元 =反為TFT基板檢查裝置通常所_ Γ束料絲子束在TFT純上掃描的 本平臺、利用荷電粒子束的掃描而對從 樣本所放出的二次電子等進行檢出的檢出器等。 保溫單元11是利用上述加熱單元1〇進 而將已加熱至高溫的TFT基板9保持於高溫狀能口/、： ’ 保溫單it 11目的在於轉在特定的高溫㈣早:° 從常溫快速預備加熱至高溫為目的的祕單- /以 ，有更小的熱容量蚊夠，例如可使用薄膜加埶 因而3將其尺寸設為小型，例如使其上了待 的平量，則亦可容易地配置在空間受限制的檢杳室4二反The transfer chamber 3 is configured to transfer the unit of the TFT substrate 9 between the load lock chamber 2 and the inspection chamber 4, for example, a transfer person can be used, and the transfer chamber 3 is not necessarily required, and the transfer robot can be disposed in the load straight chamber 2 Inside or in the examination room 4. ' 〃 ^ The machine that performs the substrate inspection on the substrate 9 also includes the thermal insulation unit that holds the TFT substrate in a high temperature state. The reverse is the TFT substrate inspection device. The Γ bundle of the filament bundle is scanned on the TFT pure platform. A detector for detecting secondary electrons emitted from a sample or the like by scanning of a charged particle beam. The heat retention unit 11 uses the above-described heating unit 1 to further maintain the TFT substrate 9 heated to a high temperature in a high temperature state. /, 'Insulation single it 11 is intended to be rotated at a specific high temperature (four) early: ° Quickly prepare heating from normal temperature The secret list for the purpose of high temperature - /, there is a smaller heat capacity mosquito, for example, the film can be twisted and thus 3 can be made small in size, for example, it can be easily disposed. In the space-restricted inspection room 4
I313Uiif,0C 其次’就TFT基板9的傳送動作與TFT基板的預借 加熱以及保溫動作加以說明。將位於外部的丁基板％ (圖1中的（A)狀悲）導人至加載互鎖真空室2内，並 :用加熱單元10將所導入的TFT基板％從常溫快速地預 至尚溫（圖1令的⑻狀態）。關於此預備加熱 夂σ,、，、溫度，騎在㈣送f 3進行傳送期間會有所下 +因此可將其设為南於在檢查室4進行的高溫檢查之严 度。 —/皿 尚溫狀態下經過預備加熱的TFT基板9b，從加載互鎖 真空室2經由傳送室3而被傳送至檢查室4。傳送室^中，、I313Uiif, 0C will be described next with respect to the transfer operation of the TFT substrate 9, the pre-boring heating of the TFT substrate, and the heat retention operation. The externally located butyl plate % ((A) in FIG. 1) is introduced into the load lock chamber 2, and the introduced TFT substrate % is quickly advanced from normal temperature to the temperature by the heating unit 10. (State of (8) of Figure 1). Regarding this preliminary heating 夂σ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, -/Dish The TFT substrate 9b which has been preheated in the warm state is transferred from the load lock chamber 2 to the inspection chamber 4 via the transfer chamber 3. Transfer room ^,
利用傳达機益人，將TFT基板9c導入至檢查室4 (圖】 中的（C)狀態）。 一U &查室4中，在利用保溫單元㈣抓基板如保持 W溫的狀態（圖i中的（D)狀態）下進行基板檢查。 傳送室3攸檢查室4接收已完成基板檢查的TFT基板 e ’並傳送至加載互鎖真空室2 (圖ι中的⑻狀態）。 加載互鎖真空室2將從傳送室3所傳送的TFT基板9f ⑷中的(F)狀態)搬出至外部(圖}中的⑹狀態）。 固I ( b )表示將tft基板從加載互鎖真空室2經由傳 送室取至檢查室4時的溫度狀態。於加載:鎖真 ^内，利用加熱單元1〇將上述TFT基板從常溫快速加敎至 f溫（圖1中的⑻狀態）。傳送室3在傳送時丁 F 丁基 板的溫度有所下降（圖]中的（C)狀離）。 1313端_ 關方、加載互鎖真空室2中的預備加熱’例如，預計因 傳送室而引起的溫度下降，而將溫度設定為將檢查室4的 導入日ΐ的溫度與溫度下降量相加後的溫度，以使已導入至 檢查t 4時的溫度成為特定的高溫狀態。 核，室4中，將已導入至檢查室4的高溫TFT基板保 持於特疋的南溫狀態。肖特定的溫度狀態，可根據對tft 基板進行高溫檢查時所需要的溫度而設定。 再者，該溫度設定，可考慮因TFT基板的位置所引起 的溫度偏差或時間改變而設定。 圖2是τρΤ基板檢查裝置1的一個構成例，圖2 (a) 表示從上方觀祭TFT基板檢查裝置的俯視圖，圖2 ( b)表 不從側面觀察TFT基板檢查裝置的側視圖。 圖2中所示之TFT基板檢查裝置1，是將加載互鎖真 空至2配置於下方位置、並將檢查室4配置於加載互鎖真 空室2之上方位置的構成例；傳送室3的傳送機器人3a， 在位於下方的加載互鎖真空室2與上方的檢查室4之間傳 送TFT基板。 加載互鎖真空室2包括IR燈（紅外燈）2a，作為對已 導入的TFT基板9A進行預備加熱的加熱單元。再者，於 IR燈2a的上方，配置有已完成基板檢查的TFT基板9b， 並導出至TFT基板檢查裝置的外部。對於導出的TFT基 板9B可根據需要進行加熱，並且從TFr基板檢查裝置] 導出後’當必須以高溫對TFT基板進行處理時，即使將其 12 1313 ί輪f.dD。 從加載互鎖真空室2導出至外部時，亦 行加熱。 且u進 檢查室4包括平臺，其躲由傳送機器人如所傳送的 =溫狀態下的TFT基板加以保持。該平臺包括用以進 Γ周整的+θ平臺4b、以及用明整χ γ # 壯I 6、XY平里4e ’而且’包括用以維持了FT基板之iV® 狀恶的加埶器lla。抖。。u 套加熱器。 lla^使用薄膜加熱器或護 問且Ϊί ’加載互鎖真空室2與傳送室3以及檢查室4之 、於;==傳达室3與檢查室4内保持真空狀態。 於加心5 '、、、十至5上，從而進行預備加熱。 】3是用：說明加熱平臺之構成例 ® 3 (a)表示將加熱 口 態。加熱平臺5包括將TFT至料9=基板9分離後的狀 列的多個支持面5a，以及形^4==方、且平行排 個槽部5b。進而，於支持面^上二=持面％之間的多 該加熱平臺5之構 叹有加熱态l】a。關於 可與e平臺朴形成一趙Γ於上述θ平臺4b上以外，亦 槽部5b形成用，v + (a)中僅表示其—部分^機器人的支持臂3b (圖3 丁FT基板9的狀態下，^ ^間。於支持臂3b上載置有 5b内，藉此，使TFT其 '态人將該支持臂3b插入槽部 '"板9在加熱平臺5上移動。 c I313n 傳送機器人的支持臂3b於該臂上載置TFT基板9並 進行傳送。傳送機器人在將TFT基板9載置於支持臂3b 上的狀態下使其在加熱平臺5上移動後，使支持臂3b下 降’藉此將TFT基板9載置於加熱平臺5的支持面5a上。 圖3 (b)表示於加熱平臺5上載置有TFT基板9的狀態。 支持臂3b在將TFT基板9載置於加熱平臺5上以後，從 槽部5b抽回。基板檢查是在已抽回支持臂3b的狀態下進 行。 •設置於加熱平臺5的支持面5a上的加熱器1 ia，將所 載置的TFT基板9保持於高溫狀態，並在進行基板檢查期 . 間，將TFT基板9維持在特定的高溫狀態。 -再者，於基板檢查結束後，使支持臂3b在插入槽部 5b内之後上升，並於支持臂3b上載置並支持已完成檢查 的TFT基板9，並將其從槽部5b抽回而進行傳出。 以下’利用圖4、圖5，表示本發明中之檢查室的溫度 狀態的實驗例。圖4表示利用加熱單元的預備加熱，而將 • 基板向檢查室内導入時的溫度設為120°C，並於檢查室内 利用保溫單元將其保溫在12〇°c時的實驗結果；圖5表示 利用加熱單元的預備加熱，而將向檢查室内導入基板時的 溫度設為100°C’並利用保溫單元將其保溫於125。〇時的命 驗結果。 寸、貝 再者，加熱單元中進行加熱，使加載互鎖真空室2之 出口處的溫度’成為將向檢查室内導入基板時的溫产 傳送部的溫度下降量相加後所得的溫度。 皿又/、 14 I313l A 圖中的A、B、C表示基板溫度在加熱平臺上各點 B、c上的時間變化。此處，時間是將基板導 至撿查室内的時刻。 、拫據圖4、圖5的實驗結果 的各部分大致保持於 100〇C。 可將檢查室内TFT基板 本發明的TFT基板檢查裝置所包括之加熱單元及保溫 早元，並非限於TFT基板，亦可適用於在高溫狀態下進行 的任意半導體基板的檢查中。 【圖式簡單說明】 圖1是用以說明本發明之TFT基板檢查裝置的概略 圖。 圖2是用以說明本發明之TFT基板檢查裝置之一構成 例的說明圖。 圖3是用以說明本發明之加熱平臺的構成例的說明 圖。 圖4是表示本發明之檢查室中溫度狀態的實驗例的圖 式。 圖5是表示本發明之檢查室中溫度狀態的另一實驗例 的圖式。 、 【主要元件符號說明】 1 :基板檢查裝置 2 ·加載互鎖真空室 2a : IR 燈 2b =閘門The TFT substrate 9c is introduced into the inspection chamber 4 (the state (C) in the figure) by the transmitter. In the U & inspection room 4, the substrate inspection is performed in a state where the substrate is held by the heat retention unit (4) while maintaining the W temperature (the state of (D) in Fig. i). The transfer chamber 3 攸 inspection chamber 4 receives the TFT substrate e ′ which has completed the substrate inspection and transfers it to the load lock vacuum chamber 2 (the state of (8) in Fig. 1). The load-locking vacuum chamber 2 carries out the (F) state in the TFT substrate 9f (4) transported from the transfer chamber 3 to the outside (state (6) in Fig.}). The solid I (b) indicates the temperature state when the tft substrate is taken from the load lock chamber 2 to the inspection chamber 4 via the transfer chamber. In the loading: lock true ^, the above TFT substrate is rapidly twisted from the normal temperature to the f temperature (the state of (8) in Fig. 1) by the heating unit 1?. The temperature of the butyl butyl plate in the transfer chamber 3 was lowered during the transfer ((C) in the figure). 1313 end _ _, the pre-heating in the load lock vacuum chamber 2 ' For example, the temperature drop due to the transfer chamber is expected, and the temperature is set to add the temperature of the introduction chamber of the inspection chamber 4 to the temperature drop amount. The subsequent temperature is such that the temperature that has been introduced to the inspection t 4 becomes a specific high temperature state. In the core, in the chamber 4, the high-temperature TFT substrate that has been introduced into the inspection chamber 4 is maintained in a characteristic south temperature state. The specific temperature state of Xiao can be set according to the temperature required for the high temperature inspection of the tft substrate. Further, this temperature setting can be set in consideration of temperature variation or time change due to the position of the TFT substrate. Fig. 2 is a configuration example of the τρΤ substrate inspection apparatus 1. Fig. 2(a) is a plan view showing the TFT substrate inspection apparatus viewed from above, and Fig. 2(b) is a side view showing the TFT substrate inspection apparatus from the side. The TFT substrate inspection apparatus 1 shown in FIG. 2 is a configuration example in which the load interlocking vacuum is set to the lower position and the inspection chamber 4 is disposed above the load lock chamber 2; the transfer of the transfer chamber 3 The robot 3a transfers the TFT substrate between the lower load lock chamber 2 and the upper inspection chamber 4. The load lock chamber 2 includes an IR lamp (infrared lamp) 2a as a heating unit for preliminary heating of the introduced TFT substrate 9A. Further, above the IR lamp 2a, the TFT substrate 9b on which the substrate inspection has been completed is placed and led out to the outside of the TFT substrate inspection device. The derived TFT substrate 9B can be heated as needed, and is derived from the TFr substrate inspection apparatus]. When the TFT substrate must be processed at a high temperature, even if it is 12 1313 ί, f.dD. When it is discharged from the load lock chamber 2 to the outside, it is also heated. And the entrance chamber 4 includes a platform which is held by the transfer robot as the TFT substrate in the transferred temperature state. The platform includes a +θ platform 4b for circumscribing, and a tuner lla for illuminating γ #6, XY ping 4e 'and 'including the iV®-like evil for maintaining the FT substrate. . shake. . u Set of heaters. Lla^ uses a film heater or a protective device and loads the interlocking vacuum chamber 2 with the transfer chamber 3 and the inspection chamber 4; == the communication chamber 3 and the inspection chamber 4 are maintained in a vacuum state. Prepare heating by adding 5', , and 10 to 5 on the center. 】 3 is used: Explain the structure of the heating platform ® 3 (a) indicates that the heating will be spoken. The heating stage 5 includes a plurality of support faces 5a in a state in which the TFTs 9 are separated from the substrate 9, and a plurality of grooves 5b are formed in parallel. Further, the support surface is on the upper side of the support surface. The heating platform 5 has a heating state l a. Regarding the formation of the e-platform on the θ stage 4b, the groove portion 5b is also formed, and v + (a) only indicates the support arm 3b of the robot - (Fig. 3 of the FT substrate 9 In the state, the support arm 3b is placed in the 5b, thereby causing the TFT to insert the support arm 3b into the groove portion &' the plate 9 moves on the heating platform 5. c I313n transfer robot The support arm 3b mounts and transports the TFT substrate 9 on the arm. The transfer robot moves the support arm 3b to the lower side after moving the TFT substrate 9 on the support arm 3b. This puts the TFT substrate 9 on the support surface 5a of the heating stage 5. Fig. 3(b) shows a state in which the TFT substrate 9 is placed on the heating stage 5. The support arm 3b mounts the TFT substrate 9 on the heating stage 5 After that, it is withdrawn from the groove portion 5b. The substrate inspection is performed in a state where the support arm 3b has been withdrawn. • The heater 1 ia provided on the support surface 5a of the heating stage 5, the TFT substrate 9 to be placed thereon The TFT substrate 9 is maintained at a specific high temperature state while being maintained at a high temperature and during the substrate inspection period. After the substrate inspection is completed, the support arm 3b is lifted after being inserted into the groove portion 5b, and the TFT substrate 9 that has been inspected is supported and supported on the support arm 3b, and is taken back from the groove portion 5b to be transmitted. The following is a description of the experimental example of the temperature state of the examination room in the present invention by using Fig. 4 and Fig. 5. Fig. 4 shows the temperature at the time when the substrate is introduced into the examination room by the preliminary heating by the heating unit. C, the result of the experiment in which the heat insulating unit is kept at 12 ° C in the inspection room; FIG. 5 shows the preheating by the heating unit, and the temperature when the substrate is introduced into the inspection chamber is set to 100 ° C' and utilized. The thermal insulation unit heats it to 125. The results of the test are as follows. In the case of the inch and the shell, the heating in the heating unit is such that the temperature at the outlet of the load lock chamber 2 becomes the temperature at which the substrate is introduced into the inspection chamber. The temperature obtained by adding the temperature drop of the production transfer unit. The dish and /, 14 I313l A The A, B, and C in the figure indicate the time variation of the substrate temperature at each point B, c on the heating platform. Here, time Is to guide the substrate to时刻 捡 室内 室内 室内 室内 室内 各 各 各 各 各 各 各 各 各 各 TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT TFT The present invention is not limited to the TFT substrate, and can be applied to inspection of any semiconductor substrate which is performed in a high temperature state. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view for explaining a TFT substrate inspection apparatus of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is an explanatory view for explaining a configuration example of a heating stage of the present invention. Fig. 4 is a view showing an experimental example of a temperature state in an examination room of the present invention. Fig. 5 is a view showing another experimental example of the temperature state in the examination room of the present invention. [Main component symbol description] 1 : Substrate inspection device 2 · Load interlock vacuum chamber 2a : IR lamp 2b = Gate
I313Wp,d0C _ 3:傳送室 3a :傳送機器人 3b :支持臂 4 :檢查室 4b : Θ平堂 4c : XY平臺 5 :加熱平臺 5a :支持面 • 5b :槽部 9 : TFT基板 - 9A ·導入的TFT基板 9B :導出的TFT基板 9a :位於外部的TFT基板 9b :導入至加熱單元的TFT基板 9c :導入至檢查室的TFT基板 9d :保持於高溫狀態的TFT基板 φ 9e :已完成基板檢查的TFT基板 9f:從傳送室所傳送的TFT基板 10 :加熱單元 11 :保溫單元 11a :加熱器 16I313Wp, d0C _ 3: transfer chamber 3a: transfer robot 3b: support arm 4: inspection chamber 4b: Θ平堂 4c: XY stage 5: heating platform 5a: support surface • 5b: groove portion 9: TFT substrate - 9A · introduction TFT substrate 9B: derived TFT substrate 9a: TFT substrate 9b located outside: TFT substrate 9c introduced to heating unit: TFT substrate 9d introduced into inspection chamber: TFT substrate held at a high temperature state φ 9e : Substrate inspection completed TFT substrate 9f: TFT substrate 10 transferred from the transfer chamber: heating unit 11: heat retention unit 11a: heater 16