WO2006134888A1

WO2006134888A1 - Tft substrate inspecting apparatus

Info

Publication number: WO2006134888A1
Application number: PCT/JP2006/311784
Authority: WO
Inventors: Yasuo Konishi
Original assignee: Shimadzu Corporation
Priority date: 2005-06-14
Filing date: 2006-06-13
Publication date: 2006-12-21
Also published as: TW200644705A; JPWO2006134888A1; CN101176006A; CN101176006B; KR20070118137A; JP4670870B2; TWI313142B

Abstract

[PROBLEMS] To inspect a substrate in a short time at a high temperature in a TFT substrate inspecting apparatus. [MEANS FOR SOLVING PROBLEMS] The TFT substrate inspecting apparatus (1) is provided with an inspection chamber (4) for inspecting an introduced TFT substrate (9), and a load lock chamber (2) for introducing the TFT substrate into the inspection chamber. The load lock chamber (2) is provided with a heating means (10) for preheating the introduced TFT substrate, and the inspection chamber (4) is provided with a thermal insulating means (11) for keeping the temperature of the TFT substrate introduced from the load lock chamber. The TFT substrate in a high temperature state is introduced into the inspection chamber by preheating the TFT substrate (9) by the heating means (10), thus, substrate inspection is performed without requiring a mechanism for heating the substrate to a high temperature in the inspection chamber nor requiring a time to increase the temperature in the inspection chamber.

Description

Specification

TFT substrate inspection equipment

Technical field

The present invention relates to a TFT substrate inspection apparatus, and more particularly to a TFT substrate inspection apparatus that inspects a TFT substrate introduced into the inspection apparatus in a high temperature state.

Background art

A semiconductor manufacturing apparatus is known that includes a sheathed heater and heats a substrate or the like in a vacuum state (for example, Patent Document 1).

[0003] In general, TFT substrate inspection equipment is inspected at room temperature, but it is difficult to detect at normal temperature by inspecting the TFT substrate at high temperature. It is expected that these defects are easily detected and the efficiency of defect detection is improved. Patent Document 1: JP-A-8-20868

Disclosure of the invention

Problems to be solved by the invention

[0004] Thus, in order to inspect a TFT substrate in a high temperature state, a heating means is installed in the inspection room, and the TFT substrate introduced into the inspection room is heated to a predetermined temperature by the heating means and then inspected. Can be considered.

[0005] When a high temperature heater is used as a heating means installed in the examination room, the TFT substrate can be heated from normal temperature to a predetermined high temperature in a short time, but the high temperature heater requires a large amount of heat capacity. In order to do so, a large space is required. Usually, the substrate inspection is performed in a vacuum state, and the inspection room for that purpose is a limited space for shortening the exhaust time, and the charged particle beam source and the TFT substrate can be moved in this limited space. There are various inspection devices such as a stage mechanism that supports the detector and a detector that detects secondary electrons emitted from the TFT substrate by beam irradiation. Therefore, it is difficult to provide a high-temperature heater that requires a large space in this narrow space.

[0006] If a high-temperature heater is set in the inspection room, the inspection room space becomes wider, so it takes time S to exhaust the inspection room and the inspection time of the TFT substrate becomes longer. Substrate board If inspection is performed inline on the substrate manufacturing line, the throughput of the TFT substrate will be reduced.

[0007] When a small heater that can be installed in a narrow space in the examination room is used as the heating means to be installed, the heat capacity of the heater is small, so that the TFT substrate introduced into the examination room It takes a long time to heat the substrate from room temperature to a high temperature. As in the case described above, the inspection time of the TFT substrate becomes longer, and when the substrate inspection of the TFT substrate is performed inline on the substrate manufacturing line, The throughput of the TFT substrate will be reduced. Furthermore, the electric field generated by a large current flowing through the heating means may affect the electron beam.

[0008] Therefore, when performing substrate inspection by heating the TFT substrate to a high temperature, it takes a long time to detect the TFT substrate, a problem that the throughput of the TFT substrate is low, or an electron beam caused by an electric field. There is a problem of disturbance.

In view of the above, an object of the present invention is to solve the above-described conventional problems and to perform a substrate inspection at a high temperature in a short time in a TFT substrate inspection apparatus.

[0010] Another object of the present invention is to perform substrate inspection at a high temperature without reducing throughput in a TFT substrate device.

Means for solving the problem

[0011] In the TFT substrate inspection apparatus according to the present invention, preheating is performed before the TFT substrate is introduced into the inspection chamber, and only the heated substrate is kept warm in the inspection chamber. This eliminates the need for high-temperature heating in the inspection chamber and prevents the substrate from staying in the inspection chamber for a long time, thus enabling inspection in a short time. In addition, the heater provided in the examination room can also be used as a J / mould.

[0012] The TFT substrate inspection apparatus of the present invention has an inspection room for performing substrate inspection of the introduced TFT substrate, and a load lock chamber for introducing the TFT substrate into the inspection chamber, and the load lock chamber is introduced. A heating means for preheating the TFT substrate is provided, and the inspection room is provided with a heat retaining means for retaining the TFT substrate introduced from the load lock chamber.

[0013] With this configuration, since the TFT substrate is preheated by the heating means provided in the load lock chamber, the TFT substrate brought into a high temperature state can be introduced into the inspection chamber. A mechanism for heating to a high temperature in the room can be dispensed with, and substrate inspection can be performed without requiring time to raise the temperature in the inspection room.

[0014] Further, in the configuration of the present invention, since preheating is performed in the load lock chamber, the next TFT substrate is heated to a high temperature while the TFT substrate previously introduced in the inspection chamber is inspected. Therefore, the addition of inspection time due to preheating can be minimized, and when preheating is completed within the normal inspection time, the substrate inspection at a high temperature can be performed at the same inspection time. You can make a trap.

[0015] In addition, in the examination room, it is sufficient to keep the temperature to a level that prevents the temperature of the preheated substrate from being lowered, so that a small temperature keeping means is sufficient. For this reason, the increase in the volume of the examination room required for installing the heat insulation means can be minimized. In addition, the influence on the electronic beam in the examination room can be reduced.

[0016] In addition, the TFT substrate can be rapidly heated by making the heat capacity of the heating means larger than the heat capacity of the heat retaining means.

[0017] While the TFT substrate is transported from the load lock chamber to the inspection chamber, the temperature of the TFT substrate preheated in the load lock chamber decreases. The heating means of the present invention anticipates the temperature decrease amount of the TFT substrate that decreases while being transported from the load lock chamber to the inspection room, and based on the temperature decrease amount, the heating setting temperature of the heating means is maintained by the heat retention means. Set the temperature higher than the set temperature. Even if the temperature drops during the transfer of the TFT substrate due to the setting of the heating set temperature and the temperature setting temperature, the high temperature inspection can be performed simply by keeping the temperature of the TFT substrate in the inspection room.

In the TFT substrate inspection apparatus of the present invention, a lamp heater can be used as the heating means, and a film heater or a sheath heater can be used as the heat retaining means.

The invention's effect

According to the present invention, it is possible to perform a substrate inspection at a high temperature in a short time in a TFT substrate inspection apparatus. In addition, TFT substrate devices can perform substrate inspection at high temperatures without reducing throughput.

Brief Description of Drawings FIG. 1 is a schematic diagram for explaining a TFT substrate inspection apparatus of the present invention.

FIG. 2 is a diagram for explaining a configuration example of a TFT substrate inspection apparatus of the present invention.

FIG. 3 is a diagram for explaining a configuration example of a heating stage of the present invention.

FIG. 4 is a diagram showing an experimental example of the temperature state in the examination room according to the present invention.

FIG. 5 is a diagram showing an experimental example of the temperature state in the examination room according to the present invention.

Explanation of symbols

[0021] 1 ... Board inspection device, 2 ... Load, lock chamber, 2a "'IR lamp, 2b ... Gate, 3 ... Transfer chamber, 3a ... Transfer robot, 3b ... Support arm, 4 ... Inspection chamber, 4a ... Heater, 4b---Θ stage, 4c ••• XY stage, 5 ... Caro heat stage, 5a ... Support surface, 5b ... Groove, 9---TFT substrate, 10 ... Heating means, 11 ... Heat retention means.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic view for explaining a TFT substrate inspection apparatus 1 of the present invention. The TFT substrate inspection device 1 includes a detection chamber 4 for detecting the TFT substrate 9, a load lock chamber (LL chamber) 2 for carrying the TFT substrate 9 between the outside and the TFT substrate inspection device 1, A transfer chamber 3 for transferring the TFT substrate 9 between the load lock chamber 2 and the inspection chamber 4 is provided.

[0024] The load lock chamber 2 includes a heating unit 10 that guides the TFT substrate 9 between the outside and the transfer chamber 3, and preheats the introduced TFT substrate 9. The heating means 10 is a means for rapidly heating the TFT substrate 9 introduced into the load lock chamber 2 with a large heat capacity from room temperature to a predetermined high temperature state. For example, an IR lamp can be used. .

The transfer chamber 3 is a means for transferring the TFT substrate 9 between the load lock chamber 2 and the inspection chamber 4, and for example, a transfer robot can be used. The transfer chamber 3 may be configured such that a transfer robot that is not necessarily required is installed in the load lock chamber 2 or the inspection chamber 4.

[0026] In addition to the mechanism for inspecting the TFT substrate 9, the inspection chamber 4 includes a heat retaining means 11 for holding the TFT substrate in a high temperature state. The substrate inspection mechanism can be a mechanism that is normally provided in a TFT substrate inspection apparatus. For example, a charged particle beam source that scans a charged particle beam such as an electron beam on a TFT substrate, a sample stage, or a charged particle beam By spear Sample force Equipped with a detector that detects secondary electrons emitted.

The heat retaining means 11 is means for retaining the TFT substrate 9 heated to a high temperature by the preheating by the heating means 10 as described above in a high temperature state. Since the heat retaining means 11 is intended to maintain a predetermined high temperature state, a heat capacity smaller than the heating means 9 intended to rapidly preheat from room temperature to a high temperature is sufficient. For example, a film heater or a sheath heater The first class can be used. Since the heat capacity required by the heat retaining means 11 can be small, the size can be reduced. For example, it can be incorporated in a stage that supports the TFT substrate, so that it can be used in the examination room 4 where space is limited. Even if it exists, it can arrange | position easily.

[0028] Next, the transfer operation of the TFT substrate 9 and the preheating and heat retention operations of the TFT substrate will be described. An external TFT substrate 9a (state (A) in FIG. 1) is introduced into the load lock chamber 2, and the introduced TFT substrate 9b is rapidly preheated from room temperature to high temperature by the heating means 10 (FIG. 1). Inside (B) state). The heating temperature by this preheating can be set higher than the temperature of the high temperature inspection performed in the inspection room 4 in anticipation of the temperature drop during the transfer in the transfer room 3.

The preheated TFT substrate 9b in a high temperature state is transferred from the load lock chamber 2 to the inspection chamber 4 through the transfer chamber 3. In transfer chamber 3, the TFT substrate 9c is introduced into inspection chamber 4 by the transfer robot (state (C) in Fig. 1).

[0030] In the examination room 4, the TFT substrate 9d is kept at a high temperature by the heat retaining means 11 ((

Perform board inspection in the state of D).

[0031] The transfer chamber 3 receives the TFT substrate 9e for which the substrate inspection has been completed from the inspection chamber 4, and transfers it to the load lock chamber 2 (state (E) in FIG. 1).

[0032] The load lock chamber 2 carries out the TFT substrate 9f (state (F) in FIG. 1) transferred from the transfer chamber 3 to the outside (state (G) in FIG. 1).

FIG. 1 (b) shows a temperature state when the TFT substrate is introduced from the load lock chamber 2 through the transfer chamber 3 into the inspection chamber 4. In the load lock chamber 2, the heating means 10 rapidly heats from room temperature to high temperature (state (B) in Fig. 1). In transfer chamber 3, the temperature of the TFT substrate drops during transfer (state (C) in Fig. 1).

[0034] Preheating in the load lock chamber 2 is performed, for example, in anticipation of a temperature drop due to the transfer chamber. The temperature when introduced into the chamber 4 is set to a temperature obtained by adding a temperature drop to the temperature at the introduction of the examination chamber 4 so that the temperature becomes a predetermined high temperature state.

In the inspection room 4, the high-temperature TFT substrate introduced into the inspection room 4 is maintained at a predetermined high temperature state. This predetermined temperature state is set based on the temperature required for high-temperature inspection of the TFT substrate.

Note that this temperature setting is set in consideration of a temperature deviation due to the position of the TFT substrate and a time variation.

[0037] Fig. 2 is a configuration example of the TFT substrate inspection apparatus 1, Fig. 2 (a) shows a plan view of the TFT substrate inspection apparatus from above, and Fig. 2 (b) shows the TFT substrate. A side view of the inspection device viewed from the side is shown.

A TFT substrate inspection apparatus 1 shown in FIG. 2 is a configuration example in which the load lock chamber 2 is disposed at a lower position and the inspection chamber 4 is disposed at an upper position of the load lock chamber 2. The transfer robot 3a transfers the TFT substrate between the lower load lock chamber 2 and the upper inspection chamber 4.

The load lock chamber 2 includes an IR lamp (infrared lamp) 2a as heating means for preheating the introduced TFT substrate 9A. Above the IR lamp 2a, the TFT substrate 9B that has been subjected to the substrate inspection is disposed and led out of the TFT substrate inspection apparatus. The derived TFT substrate 9 B can be heated as necessary. If a high temperature is required in the process applied to the TFT substrate after being derived from the TFT substrate inspection device 1, the load lock chamber 2 force external Even when it is led out, it can be heated by the IR lamp 2a.

[0040] The inspection room 4 includes a stage that holds the high-temperature TFT substrate transported by the transport robot 3a. This stage includes a Θ stage 4b for adjusting the angle, an XY stage 4c for adjusting the X-axis direction and the Y-axis direction, and a heater 11a for maintaining the high temperature state of the TFT substrate. The heater 11a can use a film heater or a sheath heater.

[0041] A gate 2b is provided between the load lock chamber 2, the transfer chamber 3, and the inspection chamber 4, so that the inside of the transfer chamber 3 and the inspection chamber 4 can be in a vacuum state.

In the inspection chamber 4 in the TFT substrate inspection apparatus, the TFT substrate 9 is preheated by being placed on the heating stage 5. FIG. 3 is a diagram for explaining a configuration example of the heating stage.

FIG. 3A shows the heating stage 5 and the TFT substrate 9 separated from each other. The heating stage 5 includes a plurality of support surfaces 5a arranged in parallel and supporting the TFT substrate 9 upward, and a plurality of grooves 5b formed between the support surfaces 5a. Further, a heater 11a is provided on the support surface 5a. The heating stage 5 can be formed integrally with the Θ stage 4b in addition to the configuration of being installed on the Θ stage 4b.

The groove 5b forms a space for inserting the support arm 3b (only part of which is shown in FIG. 3 (a)) of the transfer robot. The transfer robot moves the TFT substrate 9 onto the heating stage 5 by inserting the support arm 3b into the groove 5b while the TFT substrate 9 is placed on the support arm 3b.

The support arm 3b of the transfer robot performs transfer by placing the TFT substrate 9 on the arm.

The transfer robot moves the TFT substrate 9 on the support arm 3b and moves it onto the heating stage 5, and then lowers the support arm 3b to bring the TFT substrate 9 onto the support surface 5a of the heating stage 5. Place. FIG. 3 (b) shows a state where the TFT substrate 9 is placed on the heating stage 5. The support arm 3b is pulled out of the groove 5b after the TFT substrate 9 is placed on the heating stage 5. The substrate inspection is performed with the support arm 3b removed.

[0047] The heater 11a provided on the support surface 5a of the heating stage 5 holds the placed TFT substrate 9 in a high temperature state and maintains the TFT substrate 9 in a predetermined high temperature state during the substrate inspection. .

[0048] After the substrate inspection is completed, the support arm 3b is inserted into the groove 5b and then lifted, and the inspected TFT substrate 9 is placed on the support arm 3b to be supported, and is pulled out from the groove 5b and carried out. I do.

[0049] Hereinafter, an experimental example of the temperature state in the examination room according to the present invention will be described with reference to Figs.

Fig. 4 shows the experimental results when the temperature at the time of introduction into the examination room is 120 ° C by preheating the heating means, and the temperature is kept at 120 ° C by the heat keeping means in the examination room. This is the experimental result when the temperature at the time of introduction into the examination room is 100 ° C by preheating the heating means and the temperature is kept at 125 ° C by the heat retaining means.

[0050] In the heating means, the heating is performed so that the temperature force S at the outlet of the load lock chamber 2 and the temperature at the time of introduction into the inspection chamber plus the temperature drop in the transfer section are added. . [0051] A, B, and C in each figure indicate the time variation of the substrate temperature at each point A, B, and C on the heating stage. Here, time “0” is the time when the TFT substrate is introduced into the inspection room.

[0052] According to the experimental results of Figs. 4 and 5, the force S can be maintained to keep each part of the TFT substrate in the examination room at approximately 100 ° C.

Industrial applicability

The heating means and the heat retaining means provided in the TFT substrate inspection apparatus of the present invention are not limited to the TFT substrate, and can be applied to inspection of any semiconductor substrate performed in a high temperature state.

Claims

The scope of the claims

[1] In a TFT substrate inspection apparatus comprising an inspection room for substrate inspection of the introduced TFT substrate and a load lock chamber for introducing the TFT substrate into the inspection chamber,

The load lock chamber is provided with a heating means for preheating the introduced TFT substrate, and the inspection chamber is provided with a heat retaining means for keeping the TFT substrate introduced from the load lock chamber.

[2] The heat capacity of the heating means is larger than the heat capacity of the heat retaining means, and the heating means is TF

2. The TFT substrate inspection apparatus according to claim 1, wherein the T substrate is rapidly heated.

[3] The TFT substrate inspection device according to [1] or [2], wherein the heating setting temperature of the heating means is higher than the temperature setting temperature of the heat holding means.

4. The TFT substrate inspection apparatus according to claim 1, wherein the heating means is a lamp heater, and the heat retaining means is a film heater or a sheath heater.