CN101176006A - Tft substrate inspecting apparatus - Google Patents
Tft substrate inspecting apparatus Download PDFInfo
- Publication number
- CN101176006A CN101176006A CNA200680016715XA CN200680016715A CN101176006A CN 101176006 A CN101176006 A CN 101176006A CN A200680016715X A CNA200680016715X A CN A200680016715XA CN 200680016715 A CN200680016715 A CN 200680016715A CN 101176006 A CN101176006 A CN 101176006A
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- China
- Prior art keywords
- tft substrate
- tft
- substrate
- inspection chamber
- heating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2862—Chambers or ovens; Tanks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Toxicology (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Liquid Crystal (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
To inspect a substrate in a short time at a high temperature in a TFT substrate inspecting apparatus. The TFT substrate inspecting apparatus (1) is provided with an inspection chamber (4) for inspecting an introduced TFT substrate (9), and a load lock chamber (2) for introducing the TFT substrate into the inspection chamber. The load lock chamber (2) is provided with a heating means (10) for preheating the introduced TFT substrate, and the inspection chamber (4) is provided with a thermal insulating means (11) for keeping the temperature of the TFT substrate introduced from the load lock chamber. The TFT substrate in a high temperature state is introduced into the inspection chamber by preheating the TFT substrate (9) by the heating means (10), thus, substrate inspection is performed without requiring a mechanism for heating the substrate to a high temperature in the inspection chamber nor requiring a time to increase the temperature in the inspection chamber.
Description
Technical field
The present invention is about a kind of TFT base board checking device, particularly the TFT base board checking device about under the condition of high temperature TFT substrate that is directed in the testing fixture being checked.
Background technology
Know, utilize semiconductor-fabricating device, can be under vacuum state substrate of comprising sheathed heater (sheath heater) etc. be heated (please refer to Japanese Patent Laid Open Publication 8-20868 communique).
About the TFT base board checking device, though the TFT inspecting substrate normally carries out at normal temperatures, expectation is by carrying out the TFT inspecting substrate under the condition of high temperature, can be easy to detect be difficult to the TFT base board defect that detects at normal temperatures, and improve the efficient that defective detects.
Above-mentioned when under the condition of high temperature, checking the TFT substrate, can consider heating unit to be set, and the TFT substrate that utilizes heating unit will be directed in the inspection chamber is heated to specified temp at inspection chamber, check afterwards.
When adopting the high temperature heater (HTH) conduct to be arranged at the heating unit of inspection chamber, the TFT substrate can be heated to the specific condition of high temperature with the short time from normal temperature, but high temperature heater (HTH) must have more thermal capacity, therefore need bigger space.Usually, inspecting substrate is to carry out under vacuum state, for this reason, inspection chamber is made as only limited space for shortening evacuation time, and then, in this limited space, be provided with the charged particle electron gun, support the platform mechanism of TFT substrate and utilize light beam irradiates and the various inspection devices such as detector checked for secondary electron of emitting etc. movably from the TFT substrate.Therefore, be difficult in this narrow space, the high temperature heater (HTH) that must have than large space is set.
Suppose, when in inspection chamber, being set with the situation of high temperature heater (HTH), because of the space of inspection chamber extended, therefore inspection chamber needs evacuation time, make the supervision time of TFT substrate prolong, make on the line in the substrate of TFT substrate, when carrying out the TFT inspecting substrate on production line, the output of TFT substrate descends.
Again, when adopting the microheater that for example can be installed on narrow space in the inspection chamber to be made as heating unit, because of the thermal capacity of well heater less, be heated to the condition of high temperature from normal temperature and need the long period being directed into TFT substrate in the inspection chamber, and identical with said circumstances, the TFT substrate is put inspection needs the long time, makes on the line in the substrate of TFT substrate, when carrying out the TFT inspecting substrate on production line, the output of TFT substrate descends.And then the electric field that big electric current produced that circulates in heating unit may impact electron beam.
Therefore, when the TFT substrate was heated to high temperature and carries out inspecting substrate, have following problem: the TFT inspecting substrate needed the long period; The TFT substrate output descends; Perhaps cause the electron beam confusion because of electric field.
Summary of the invention
Therefore, the objective of the invention is to solve above-mentioned previous problem points, utilize the TFT base board checking device, under high temperature, carry out inspecting substrate with the short time.
Again, the objective of the invention is to utilize the TFT board device under high temperature, to carry out inspecting substrate, and its output is descended.
Among the present invention, utilize the TFT base board checking device, prepare heating period at the leading portion that the TFT substrate is directed in the inspection chamber, and only the substrate that has heated is incubated in inspection chamber.Whereby, need not in inspection chamber, to carry out the high temperature heating, can avoid substrate in inspection chamber, to be detained for a long time, therefore can check with the short time.Also can make the well heater miniaturization that is arranged at inspection chamber again.
TFT base board checking device of the present invention constitutes, comprise the TFT substrate that has imported is carried out the inspection chamber of inspecting substrate and in order to the TFT substrate is directed into the load lock (load-lock chamber) in the inspection chamber, wherein load lock comprises the heating unit that the TFT substrate that is imported is prepared heating, and inspection chamber comprises the heat-insulation unit that is incubated from the TFT substrate that load lock imported.
According to above-mentioned formation, owing to utilize the heating unit that is arranged in the load lock that the TFT substrate is prepared heating, and the TFT substrate that is under the condition of high temperature can be directed in the inspection chamber, so can need not to be heated to the mechanism of high temperature in the inspection chamber, again, nothing takes time and can carry out inspecting substrate in order to inspection chamber is heated up.
Again, the formation of the present application, owing in load lock, prepare heating, in to during before being directed into TFT substrate in the inspection chamber and carrying out inspecting substrate, next TFT substrate can be heated to high temperature, therefore, but the adding up of the supervision time that Min. ground control causes because of the preparation heating, when the preparation heating finished in the common supervision time, can use with the identical usually supervision time and at high temperature carry out inspecting substrate.
Again, owing to can under the degree that the substrate temperature that prevents to heat through preparation descends, be incubated in the inspection chamber, thereby small-sized heat-insulation unit is just enough.For this reason, can be controlled in Min. because of the increase that the inspection chamber volume that heat-insulation unit needs will be set.And, can reduce influence to electron beam in the inspection chamber.
Again, the thermal capacity of heating unit is greater than the thermal capacity of heat-insulation unit, but so Fast Heating TFT substrate.
During the TFT substrate was sent to inspection chamber from load lock, the temperature of the TFT substrate of preparation heating descended to some extent in load lock.Heating unit of the present invention can be predicted the temperature slippage that is sent to TFT substrate during the inspection chamber from load lock earlier, and according to this temperature slippage, and the heating setpoint temperature of heating unit is set at the insulation design temperature that is higher than heat-insulation unit.By setting this heating setpoint temperature and insulation design temperature, even when TFT substrate when temperature descends in transmission, owing to only the TFT substrate is incubated in the inspection chamber, so also can carry out the high temperature inspection.
In the TFT base board checking device of the present application, can use heating lamp, again, can use thin film heater or sheathed heater as heat-insulation unit as heating unit.
According to the present invention, utilize the TFT base board checking device, can use the short time under high temperature, to carry out inspecting substrate.Again, utilize the TFT board device, can under high temperature, carry out inspecting substrate and do not reduce its output.
Description of drawings
Fig. 1 is in order to the skeleton diagram of TFT base board checking device of the present invention to be described.
Fig. 2 is the key diagram in order to the configuration example that TFT base board checking device of the present invention is described.
Fig. 3 is the key diagram in order to the configuration example that heating platform of the present invention is described.
Fig. 4 is experimental example graphic of state of temperature in the expression inspection chamber of the present invention.
Fig. 5 is experimental example graphic of state of temperature in the expression inspection chamber of the present invention.
1: base board checking device 2: load lock
2a:IR lamp 2b: gate
3: transfer chamber 3a: transfer robot
3b: supporting arm 4: inspection chamber
4a: well heater 4b: theta stage
4c:XY platform 5: heating platform
5a: seating surface 5b: slot part
9:TFT substrate 9A: the TFT substrate of importing
9B: the TFT substrate 9a of derivation: be positioned at outside TFT substrate
9b: the TFT substrate 9c that is directed into heating unit: the TFT substrate that is directed into inspection chamber
9d: the TFT substrate 9e that remains in the condition of high temperature: the TFT substrate of having finished inspecting substrate
9f: from the TFT substrate 10 that transfer chamber transmitted: heating unit
11: heat-insulation unit
Embodiment
Below, for example of the present invention, described in detail with reference to figure.
Fig. 1 is in order to the skeleton diagram of TFT base board checking device of the present invention to be described.TFT base board checking device 1 comprises the inspection chamber 4 of checking TFT substrate 9, externally and spread out of the load lock (LL chamber) 2 of TFT substrate 9 between the TFT base board checking device 1 and the transfer chamber 3 of transmission TFT substrate 9 between load lock 2 and inspection chamber 4.
Transfer chamber 3 is the unit that transmit TFT substrate 9 between load lock 2 and inspection chamber 4, can use for example transfer robot.Moreover, may not need transfer chamber 3, transfer robot can be arranged in the load lock 2 or in the inspection chamber 4.
Heat-insulation unit 11 is to utilize above-mentioned heating unit 10 to prepare heating, and the TFT substrate 9 that will be heated to high temperature remains in the unit of the condition of high temperature.Heat-insulation unit 11 purposes are to maintain the specific condition of high temperature, therefore, with from normal temperature fast preparation to be heated to high temperature be that the heating unit 9 of purpose is compared, it is just enough that it has littler thermal capacity, for example can use thin film heater or sheathed heater etc.Because it is less that these heat-insulation unit 11 necessary thermal capacity can be, thereby its size can be made as small-sizedly, for example make it be built in the platform of supporting the TFT substrate, then also can easily be configured in the inspection chamber 4 of limited space system.
Secondly, be illustrated with regard to the transmission action of TFT substrate 9 and the preparation heating and the insulation action of TFT substrate.To be arranged in outside TFT substrate 9a ((A) state of Fig. 1) and be directed into load lock 2, and utilize heating unit 10 that the TFT substrate 9b that is imported is prepared apace from normal temperature to be heated to high temperature ((B) state Fig. 1).About the heating-up temperature that this preparation is heated, estimate during transmitting, can descend to some extent by transfer chamber 3, therefore it can be made as the temperature that is higher than the high temperature inspection of carrying out at inspection chamber 4.
Through the TFT substrate 9b of preparation heating, be transferred into inspection chamber 4 via transfer chamber 3 under the condition of high temperature from load lock 2.In the transfer chamber 3, utilize transfer robot, TFT substrate 9c is directed into inspection chamber 4 ((C) state among Fig. 1).
In the inspection chamber 4, carry out inspecting substrate utilizing heat-insulation unit 11 TFT substrate 9d to be remained under the state ((D) state among Fig. 1) of high temperature.
Transfer chamber 3 receives from inspection chamber 4 and has finished the TFT substrate 9e of inspecting substrate, and is sent to load lock 2 ((E) state among Fig. 1).
Fig. 1 (b) expression is with the state of temperature of TFT substrate when load lock 2 is directed into inspection chamber 4 via transfer chamber 3.In load lock 2, utilize heating unit 10 that above-mentioned TFT substrate is quickly heated up to high temperature ((B) state Fig. 1) from normal temperature.The temperature of transfer chamber 3 TFT substrate when transmitting descend to some extent ((C) state among Fig. 1).
Heat about the preparation in the load lock 2, for example, the temperature that expectation causes because of transfer chamber descends, and temperature when temperature is set at importing with inspection chamber 4 and the temperature after the addition of temperature slippage, so that the temperature when being directed into inspection chamber 4 becomes the specific condition of high temperature.
In the inspection chamber 4, the high temperature TFT substrate that is directed into inspection chamber 4 is remained in the specific condition of high temperature.The state of temperature that this is specific, can according to the TFT substrate is carried out high temperature when checking needed temperature set.
Moreover this temperature is set, and can consider to change and set because of the caused temperature deviation in the position of TFT substrate or time.
Fig. 2 is a configuration example of TFT base board checking device 1, and the vertical view of TFT base board checking device is observed in Fig. 2 (a) expression from the top, and the side view of TFT base board checking device is observed in Fig. 2 (b) expression from the side.
TFT base board checking device 1 shown in Fig. 2 is the configuration example that load lock 2 is disposed at lower position and inspection chamber 4 is disposed at the top position of load lock 2; The transfer robot 3a of transfer chamber 3, below load lock 2 and above inspection chamber 4 between transmit the TFT substrate.
Moreover, have gate 2b between load lock 2 and transfer chamber 3 and the inspection chamber 4, can make transfer chamber 3 and the inspection chamber 4 interior vacuum states that keep.
Fig. 3 is the key diagram in order to the configuration example of explanation heating platform
Fig. 3 (a) expression is with heating platform 5 and state after TFT substrate 9 separates.Heating platform 5 comprises a plurality of seating surface 5a that 9 of TFT substrates are held in the top and are arranged in parallel, and is formed at a plurality of slot part 5b between these seating surfaces 5a.And then, be provided with well heater 11a in seating surface 5a.About the formation of this heating platform 5,, also can form one with theta stage 4b except that being arranged at above-mentioned theta stage 4b goes up.
Slot part 5b forms the space in order to the supporting arm 3b (only representing its part among Fig. 3 (a)) that inserts transfer robot.Upload under the state that is equipped with TFT substrate 9 in supporting arm 3b, transfer robot inserts this supporting arm 3b in the slot part 5b, by this, TFT substrate 9 is moved on heating platform 5.
The supporting arm 3b of transfer robot mounting TFT substrate 9 and transmitting on this arm.Transfer robot with TFT substrate 9 mountings in making it under the state on the supporting arm 3b after moving on the heating platform 5, supporting arm 3b is descended, by this with TFT substrate 9 mountings on the seating surface 5a of heating platform 5.Fig. 3 (b) is shown in heating platform 5 and uploads the state that is equipped with TFT substrate 9.Supporting arm 3b with TFT substrate 9 mountings after on the heating platform 5,5b draws back from slot part.Inspecting substrate is to carry out under the state of drawing back supporting arm 3b.
Be arranged at the well heater 11a on the seating surface 5a of heating platform 5, the TFT substrate 9 of institute's mounting remained in the condition of high temperature, and during carrying out inspecting substrate, TFT substrate 9 is maintained the specific condition of high temperature.
Moreover, after the inspecting substrate end, supporting arm 3b is risen afterwards in inserting slot part 5b, and go up the TFT substrate 9 that mounting also supports to have finished inspection, and it is drawn back and spread out of from slot part 5b in supporting arm 3b.
Below, utilize Fig. 4, Fig. 5, the experimental example of the state of temperature of the inspection chamber among expression the present invention.Fig. 4 represents to utilize the preparation heating of heating unit, and the temperature when substrate imported in inspection chamber is made as 120 ℃, and utilizes heat-insulation unit that it is incubated experimental result 120 ℃ the time in inspection chamber; Fig. 5 represents to utilize the preparation heating of heating unit, and the temperature will import substrate in inspection chamber the time is made as 100 ℃, and utilizes heat-insulation unit that it is incubated experimental result in 125 ℃ the time.
Moreover, heat in the heating unit, make the temperature in the exit of load lock 2, the temperature when becoming and the temperature of gained after the temperature slippage addition of transport unit with importing substrate in inspection chamber.
A among each figure, B, C represent that the time of substrate temperature on each point A, B, C on the heating platform changes.Herein, the time " 0 " is that the TFT substrate is directed into moment in the inspection chamber.
According to the experimental result of Fig. 4, Fig. 5, the each several part of TFT substrate in the inspection chamber roughly can be remained in 100 ℃.
Heating unit and heat-insulation unit that TFT base board checking device of the present invention is included are not limited to the TFT substrate, also in the inspection applicable to any semiconductor substrate that carries out under the condition of high temperature.
Claims (4)
1. TFT base board checking device comprises the TFT substrate that is imported is carried out the inspection chamber of inspecting substrate and the TFT substrate is directed into load lock in the above-mentioned inspection chamber, it is characterized in that:
Above-mentioned load lock comprises heating unit, is used for the TFT substrate preparation heating to importing, and
Above-mentioned inspection chamber comprises heat-insulation unit, and the TFT substrate that is used for importing from load lock is incubated.
2. TFT base board checking device as claimed in claim 1, wherein the thermal capacity of above-mentioned heating unit is made as the thermal capacity greater than above-mentioned heat-insulation unit, and above-mentioned heating unit carries out Fast Heating to the TFT substrate.
3. TFT base board checking device as claimed in claim 1 or 2, wherein the heating setpoint temperature of above-mentioned heating unit is higher than the insulation design temperature of above-mentioned heat-insulation unit.
4. TFT base board checking device as claimed in claim 1 or 2, wherein above-mentioned heating unit is a heating lamp, above-mentioned heat-insulation unit is thin film heater or sheathed heater.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005174075 | 2005-06-14 | ||
| JP174075/2005 | 2005-06-14 | ||
| PCT/JP2006/311784 WO2006134888A1 (en) | 2005-06-14 | 2006-06-13 | Tft substrate inspecting apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101176006A true CN101176006A (en) | 2008-05-07 |
| CN101176006B CN101176006B (en) | 2010-09-01 |
Family
ID=37532250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680016715XA Expired - Fee Related CN101176006B (en) | 2005-06-14 | 2006-06-13 | TFT substrate inspecting apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4670870B2 (en) |
| KR (1) | KR20070118137A (en) |
| CN (1) | CN101176006B (en) |
| TW (1) | TWI313142B (en) |
| WO (1) | WO2006134888A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101786797A (en) * | 2009-01-22 | 2010-07-28 | 株式会社爱发科 | Processing device |
| CN102667507A (en) * | 2009-12-10 | 2012-09-12 | 株式会社岛津制作所 | TFT substrate inspection apparatus and tft substrate inspection method |
| CN104795339A (en) * | 2015-03-09 | 2015-07-22 | 昆山龙腾光电有限公司 | Detection device and method for thin-film transistor array substrate |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4863163B2 (en) * | 2006-07-10 | 2012-01-25 | 株式会社島津製作所 | TFT substrate inspection equipment |
| KR100920158B1 (en) * | 2008-06-18 | 2009-10-06 | (주)에이원메카 | Straight type cell aging device of lcd cell line and cell aging method |
| CN105632041A (en) * | 2014-11-26 | 2016-06-01 | 上海宝钢钢材贸易有限公司 | Self-service lading bill printing system and method |
| KR20220009667A (en) | 2020-07-16 | 2022-01-25 | 삼성전자주식회사 | Semiconductor module inspection device with robot |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6249268A (en) * | 1985-08-28 | 1987-03-03 | Toshiba Seiki Kk | Heating and cooling of electronic part |
| JPS6285810A (en) * | 1985-10-11 | 1987-04-20 | Nec Corp | Electron beam length measuring machine |
| JPH08105938A (en) * | 1994-10-06 | 1996-04-23 | Advantest Corp | Ic test handler |
| JP3813334B2 (en) * | 1997-10-24 | 2006-08-23 | 株式会社半導体エネルギー研究所 | Manufacturing method of liquid crystal panel for rear projection TV |
| JP2001013519A (en) * | 1999-06-28 | 2001-01-19 | Matsushita Electric Ind Co Ltd | Active matrix array substrate for liquid crystal display device, method and device for inspecting it, liquid crystal display device and video display device |
-
2006
- 2006-05-17 TW TW095117423A patent/TWI313142B/en not_active IP Right Cessation
- 2006-06-13 WO PCT/JP2006/311784 patent/WO2006134888A1/en active Application Filing
- 2006-06-13 JP JP2007521285A patent/JP4670870B2/en not_active Expired - Fee Related
- 2006-06-13 KR KR1020077024560A patent/KR20070118137A/en not_active Application Discontinuation
- 2006-06-13 CN CN200680016715XA patent/CN101176006B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101786797A (en) * | 2009-01-22 | 2010-07-28 | 株式会社爱发科 | Processing device |
| CN101786797B (en) * | 2009-01-22 | 2014-04-02 | 株式会社爱发科 | Processing device |
| CN102667507A (en) * | 2009-12-10 | 2012-09-12 | 株式会社岛津制作所 | TFT substrate inspection apparatus and tft substrate inspection method |
| CN104795339A (en) * | 2015-03-09 | 2015-07-22 | 昆山龙腾光电有限公司 | Detection device and method for thin-film transistor array substrate |
| CN104795339B (en) * | 2015-03-09 | 2017-10-20 | 昆山龙腾光电有限公司 | The detection means and detection method of thin-film transistor array base-plate |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200644705A (en) | 2006-12-16 |
| TWI313142B (en) | 2009-08-01 |
| JPWO2006134888A1 (en) | 2009-01-08 |
| CN101176006B (en) | 2010-09-01 |
| KR20070118137A (en) | 2007-12-13 |
| WO2006134888A1 (en) | 2006-12-21 |
| JP4670870B2 (en) | 2011-04-13 |
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