TWI311782B - - Google Patents

Download PDF

Info

Publication number
TWI311782B
TWI311782B TW093118870A TW93118870A TWI311782B TW I311782 B TWI311782 B TW I311782B TW 093118870 A TW093118870 A TW 093118870A TW 93118870 A TW93118870 A TW 93118870A TW I311782 B TWI311782 B TW I311782B
Authority
TW
Taiwan
Prior art keywords
frequency
high frequency
mhz
lower electrode
plasma
Prior art date
Application number
TW093118870A
Other languages
English (en)
Chinese (zh)
Other versions
TW200507104A (en
Inventor
Tsutomu Satoyoshi
Original Assignee
Tokyo Electron Limite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limite filed Critical Tokyo Electron Limite
Publication of TW200507104A publication Critical patent/TW200507104A/zh
Application granted granted Critical
Publication of TWI311782B publication Critical patent/TWI311782B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
TW093118870A 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus TW200507104A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003285125A JP3905870B2 (ja) 2003-08-01 2003-08-01 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200507104A TW200507104A (en) 2005-02-16
TWI311782B true TWI311782B (ja) 2009-07-01

Family

ID=34364864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118870A TW200507104A (en) 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus

Country Status (4)

Country Link
JP (1) JP3905870B2 (ja)
KR (1) KR100702726B1 (ja)
CN (1) CN100477104C (ja)
TW (1) TW200507104A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466161B (zh) * 2011-05-23 2014-12-21 Nanya Technology Corp 用以製備高寬深比結構之電漿蝕刻方法及堆疊式電容器之製備方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879185B2 (en) * 2003-12-18 2011-02-01 Applied Materials, Inc. Dual frequency RF match
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4515950B2 (ja) * 2005-03-31 2010-08-04 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法およびコンピュータ記憶媒体
CN100367829C (zh) * 2005-12-08 2008-02-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体激励方法
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
CN101207034B (zh) * 2006-12-20 2010-05-19 北京北方微电子基地设备工艺研究中心有限责任公司 腔室上盖及包含该上盖的反应腔室
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP4905304B2 (ja) * 2007-09-10 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5474291B2 (ja) 2007-11-05 2014-04-16 株式会社アルバック アッシング装置
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
CN102438389B (zh) * 2010-09-29 2013-06-05 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
CN102694525B (zh) * 2011-03-23 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 双频滤波装置及其处理方法和半导体设备
CN103187943B (zh) * 2011-12-28 2017-02-08 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
US10410836B2 (en) * 2017-02-22 2019-09-10 Lam Research Corporation Systems and methods for tuning to reduce reflected power in multiple states
CN111052320B (zh) * 2018-01-29 2023-04-14 株式会社爱发科 反应性离子蚀刻装置
KR102223875B1 (ko) * 2019-10-30 2021-03-05 주식회사 뉴파워 프라즈마 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466161B (zh) * 2011-05-23 2014-12-21 Nanya Technology Corp 用以製備高寬深比結構之電漿蝕刻方法及堆疊式電容器之製備方法

Also Published As

Publication number Publication date
KR20050016012A (ko) 2005-02-21
KR100702726B1 (ko) 2007-04-03
JP2005056997A (ja) 2005-03-03
TW200507104A (en) 2005-02-16
CN100477104C (zh) 2009-04-08
JP3905870B2 (ja) 2007-04-18
CN1581445A (zh) 2005-02-16

Similar Documents

Publication Publication Date Title
TWI311782B (ja)
EP1656694B1 (en) High aspect ratio etch using modulation of rf powers of various frequencies
TWI320945B (ja)
US8513563B2 (en) Plasma processing apparatus and plasma processing method
KR101405175B1 (ko) 플라즈마 에칭 방법
TWI321814B (ja)
EP1840937A1 (en) Plasma processing apparatus and plasma processing method
EP1708241A1 (en) Capacitively coupled plasma processing apparatus and method
KR20090125084A (ko) 가변 전력을 갖는 에지 전극
KR101858324B1 (ko) 플라즈마 에칭 방법
JP2014528642A (ja) エッチング処理条件を回復させる乾式クリーニング方法
KR100894345B1 (ko) 플라즈마 에칭 방법 및 컴퓨터 판독 가능한 기억 매체
KR20080006457A (ko) 플라즈마 에칭 방법 및 컴퓨터 판독 가능한 기억 매체
JP4646880B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
JP5633928B2 (ja) 深溝ライナ除去方法
JPH09129594A (ja) ドライエッチング方法及び装置
TW201842532A (zh) 有機材料的自我限制蝕刻之實行程序
US20070218699A1 (en) Plasma etching method and computer-readable storage medium
EP4192220A1 (en) A method of plasma etching
Edamura et al. A novel plasma etching tool with rf-biased Faraday-shield technology: chamber surface reaction control in the etching of nonvolatile materials
EP4391023A1 (en) Method of plasma etching
JP2000235968A (ja) ドライエッチング装置及びそれを用いたドライエッチング方法