TWI309867B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI309867B
TWI309867B TW095128496A TW95128496A TWI309867B TW I309867 B TWI309867 B TW I309867B TW 095128496 A TW095128496 A TW 095128496A TW 95128496 A TW95128496 A TW 95128496A TW I309867 B TWI309867 B TW I309867B
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TW
Taiwan
Prior art keywords
semiconductor device
resin
straight line
semiconductor substrate
substrate
Prior art date
Application number
TW095128496A
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English (en)
Other versions
TW200721334A (en
Inventor
Shuichi Tanaka
Original Assignee
Seiko Epson Corp
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200721334A publication Critical patent/TW200721334A/zh
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Publication of TWI309867B publication Critical patent/TWI309867B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

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1309867 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種半導體裝置。 【先前技術】 已知有於配線基板上構裝半導體裝置（例如參照日本特 開平2-272737號公報）之型式的電子模組。為了製造高可靠 f的電子模組’電性連接線基板之配線圖案與半導體裝 置之電性連接部之事相當重要。 、 、 【發明内容】 本發月之目的在於提供一種高構裝性的半導體裝置。 [解決問題之方法] (1)本發明之半導體裝置，包含： 半導體基板，其形成有複數之電極而成；
複數之樹脂突起’其形成於前述半導體基板上，並卜一 直線排列而成；及 Q 複數之電性連接部，其形成於前突起上，並電性 連接於前述電極； ^*1 交之方向延 前述複數之樹脂突起係形成朝與前述直_ 伸的形狀。 根據本發月可以提供構裝性優越的半導體裝置。 (2) 於該半導體裴置中 ^ 士 别述樹脂突起亦可以形成為以鱼 刖述直線斜向相交之方式延伸之形狀。 ” (3) 於該半導體裴置中，访、^ -W ^ ^ He- 則述樹脂突起亦可以形成為以i 則述直線正父之方式延伸之形狀。 认、 113447.doc 13〇9867 . (4)於該半導體裝4中，t述半導體基板可為半導體晶 片，前述直線可沿前述半導體基板之前述電極的形成面: 邊延伸。 β ⑺於該半導體裝置中，前述半導體基板之前述電極的形 成面可為長方形’前述直線可沿前述長方形的長邊延伸。 (6)於該半導體裝置中，於各個前述樹脂突起上可形成有 複數之前述電性連接部。 ^ 【實施方式】 以下，參照圖面說明適用本發明之實施形態。然而，本 發明並不限定於以下的實施形態。此外’本發明係包含任 意組合以下之實施形態及變形例者。 、 圖1(A)〜圖3係用於說明有關適用本發明之實施形態的半 - $體裝置的圖。於此’圖Μ)係有關適用本發明之實施形 態的半導體裝置1的上視圖。惟，於圖i(A)中，為了說 明，省略電極丨4及電性連接部3〇 (配線32)。此外，圖i(b) • 係圖1(A)的部分放大圖，圖UC)係圖1(B)之IC-IC線剖面 圖。 有關本實施形態的半導體裝置，包含半導體基板10。半 導體基板10可以是例如矽晶片。半導體基板1〇亦可以如圖 1(A)所示般，成為晶片狀。亦即，半導體基板1〇亦可以是 半導體晶片。或者，半導體基板1〇亦可以是晶圓狀（未圖 不）。此時，半導體基板1〇亦可以包含成為複數之半導體 晶片（半導體裝置）之區域。亦可以於半導體基板1〇上形成 積體電路12 (參照圖1(c))。積體電路12之構成並沒有特定 113447.doc !3〇9867 的限制’惟亦可以包含例如電晶體等主動元件或電阻、線 圈、電容等被動元件。半導體基板10為晶片狀之情形，半 導體基板10之積體電路12的形成面（主動面）亦可以成為長 方形（參照圖1(A))。惟，半導體基板10之主動面亦可以形 成正方形（未圖示）。 於半導體基板10上，如圖1(B)及圖1(c)所示般，形成複 數之電極14。電極14例如形成於半導體基板1〇之積體電路 φ 12的形成面（主動面）亦可。電極14亦可以沿著半導體基板 10之一邊排列。電極14亦可以沿著半導體基板1〇之複數邊 排列。半導體基板1〇之主動面為長方形之情形，電極14亦 可以（僅）沿著其2個長邊排列。惟，半導體裝置亦可再進一 ' 步包含沿著半導體基板10之主動面之短邊排列之電極（未 - 圖示）。電極14亦可以沿著半導體基板10之一邊排列成一 行。惟，電極14亦可以沿著一邊排列成複數行（未圖示）。 電極14亦可以與積體電路12電性連接。或者，包含未電 • 性連接於積體電路12之導體，亦可稱為電極14。電極14亦 可以疋半導體基板之内部配線（電極）之一部分。電極14亦 可以以鋁或銅等之金屬形成。 如圖1(c)所示般，半導體基板1〇亦可以具有鈍化膜16。 鈍化膜16可以以使電極14露出之方式形成。鈍化膜^亦可 以具有使電極14露出之開口。鈍化膜亦可以是例如以〇2或
SiN等無機絕緣膜。或者，鈍化膜16亦可以是聚酿亞胺樹 脂等之有機絕緣膜。 有關本實施形態之半導體裝置，係如圖1(八)〜圖1(C)所 113447.doc 1309867
示般’包含複數之樹脂突起20。樹脂突起2〇形成於半導體 基板10上而成。複數之樹脂突起2〇沿著一直線ι〇〇排列而 成。亦即，有關本實施形態之半導體裝置，亦可以說是包 含可以分成沿著一直線1 00排列之群組的複數之樹脂突起 20。此時’樹脂突起2〇亦可以設置成可以分為1個或複數 個群組。此外，直線1〇〇亦可以是沿著半導體基板1〇(半導 體晶片）之外形的1個邊延伸的直線。半導體基板1〇之電極 1 4形成之面的外形為長方形之情形，直線1 〇 〇亦可以是沿 著其長邊延伸的直線。亦即，複數之樹脂突起2〇亦可以沿 著半導體晶片之長邊排列。再者，複數之脂突起“亦可以 隔著間隔排列。 樹脂突起20分別為朝與直線1〇〇相交之方向延伸之形 狀。樹脂突起20係如圖1(A)及圖1(B)所示般，亦可以呈與 直線100斜向相交般延伸之形狀。樹脂突起2〇亦可以是沿 著例如由半導體基板丨〇 (半導體晶片）之中心呈放射狀延伸 的直線而延伸的形狀。 樹脂突起20的材料沒有特別的限定，可以適用已經周知 的任一種材料。例如樹脂突起2〇，亦可以以聚醯亞胺、矽 改質聚酿亞胺樹腊、環氧樹脂、發改質環氧樹脂、苯環丁 烯（BCB; benzocycIobutene)、聚苯并噁唑㈣〇; PO丨ybenzoxazole)、酚樹脂等之樹脂形成。 ， 有關本實施形態之半導體裝置 包含複數之電性連接部 30。電性連接部30形成於樹脂突起⑼上而成。此時，於工 個樹脂突起20上，形成複數之電性連接部％亦可（參照圖 113447.doc 1309867 WB))。或者，於i個樹脂突起2〇上，僅形成1個電性連接部 3〇亦可（未圖示）。電性連接部30，亦可以分別與電極14電 性連接。例如’電性連接部30亦可以指由電極14引出至樹 月曰犬起20上而形成之配線32的一部分（與樹脂突起20重疊 之區域）。此時’電性連接部3〇，亦可以指配線32中之作 為外。卩端子使用之部分。再者，配線32亦可以在樹脂突起 20之兩側，與半導體基板1〇 (鈍化膜16)相接觸地形成。此 外’配線32於與直線1〇〇相交之方向延伸亦可。 配線32 (電性連接部3〇)之構造及材料並無特別的限定。 例如，配線32以單層形成亦可。或者，配線32以複數層形 成亦可。此時，配線32包含由鈦鎢形成之第1層、及由金 形成之第2層亦可（未圖示）。 有關本實施形態之半導體裝置1，亦可私為以上之構 成。根據半導體裝置1，可以提供構裝性優越的半導體裝 置。亦即，根據半導體裝置！，可以有效率的製造高可靠 性的電子模組1〇〇〇 (參照圖3)。以下，說明有關此效果。 構裝半導體裝置1於配線基板4〇之方法並無特別限定， 惟參照圖2(A)〜圖2(C)，說明其一例。首先，說明有關配 線基板40。配線基板40亦可以包含底部基板42及配線圖案 44。底部基板42之材料並無特別限定，可以是有機系或無 機系之任一者之材料，亦可以是此等之複合構造所構成 者。作為底部基板42，亦可以使用由無機系之材料所形成 之基板。此時，底部基板42亦可以是陶瓷基板或玻璃基 板。底部基板42為玻璃基板之情形，配線基板4〇亦可以是 113447.doc 1309867 電性光學面板（液晶面板、電致發光面板等）之一部份。配 線圖案44亦可以藉由ITO (氧化銦錫）、〜、八丨等之金屬 膜、金屬化合物膜、或該等之複合膜形成。此時，配線圖 .案44亦可以電性連接於驅動液晶的電極（掃描電極、訊號 電極、相對電極等）。或者，底部基板42亦可以是由聚 苯二曱酸乙二酯（PET)所構成之基板或薄膜。或者，亦可 使用由聚醯亞胺樹脂所構成之軟性基板作為底部基板42。 亦了以使用FPC (軟性印刷電路板）、或於TAB (捲帶式自 動接合）技術中使用之捲帶作為軟性基板。此時，配線圖 案44亦可以積層例如銅（Cu)、鉻（Cr)、鈦（叫、鎳 (N〇、鈦鎢（Ti_W)中之任一者而形成。然後，配線圖案料 包含電性連接部45。電性連接部45係配線圖案44中，利用 作為與其他構件電性連接之部分。此外，配線圖案44亦可 以其部分通到底部基板42之内侧之方式形成（未圖 示）。 以下，說明有關搭載半導體裝置i於配線基板4〇之步 驟。首先，如圖2 (A)所示般，將半導體裝置丄配置於配線 基板40上，以半導體裝置1之電性連接部3〇 (樹脂突起2⑼ 與配線基板40之配線圖案44 (電性連接部45)相對之方式， 進行對位。此時，於半導體裝置！與配線基板4〇之間預先 設置接著劑50亦可。接著劑50亦可以使用例如薄臈狀之接 著劑。或者，亦可利用糊狀之接著劑作為接著劑5〇。接著 劑50亦可以是絕緣性之接著劑。接著劑5〇亦可以是樹脂系 接著劑。其後，如圖2(B)所示般，加壓半導體裝置！與配 113447.doc -10- 1309867 線基板40。於本步财，藉由樹腊突起2q，使接著劑观 H ® 2(B)) 〇 ‘然後’使電性連接部％與配線圖案 44 (電性連接部45)接觸（參照圖2(c》。本步驟亦可以於加 熱環境下進行。藉此，可以提高接著劑5()之流動性。再 者’於本步驟巾，藉^半導體基板1G與喊基板4G壓潰樹 脂突起20,使樹脂突起2〇彈性變形亦可(參照圖聊。藉 此’由於藉由樹脂突起20之彈力，可以壓緊電性連接部3〇 與電性連接部45 (配線圖案44)’故可以製造電性連接可靠 性尚的電子模、组。然後’如圖2(c)般使接著劑5〇硬化，形 成接著層52亦可^藉由接著層52維持半導體基板ι〇與配線 基板40之間隔亦可。亦即，亦可以藉由接著層52，維持樹 脂突起2G彈性變形之狀態。例如，再壓潰樹脂突起2〇之狀 態下使接著劑50硬化，可維持樹脂突起2〇彈性變形之狀 態。 藉由以上之步驟，構裝半導體裝置1於配線基板40亦 可。再者，經由檢查步驟等，亦可以製造圖3所示之電子 模組1000。電子模組1000亦可以是顯示元件。顯示元件亦 可以是例如液晶顯示元件或EL (電致發光）顯示元件。然 後，半導體裝置1 (半導體基板10)亦可以是控制顯示元件 之驅動1C。 如先前已說明，在構裝半導體裝置i於配線基板40之步 驟中，預先於半導體裝置1與配線基板40之間設置接著劑 50之情形，藉由樹脂突起20 (電性連接部3〇)使接著劑5〇流 動。此時，為了電性連接半導體裝置！之電性連接部3〇與 113447.doc -11- 1309867 配線圖案44 (電性連接部45)，使接著劑5〇不要殘留於電性 連接部30與電性連接部45之間地，進行半導體裝置i之構 裝步驟s重要的m，於構裝半導體裝置冰配線基 板40之步驟中，若能夠有效率的使接著劑5〇從電性連接部 30與電性連接部45之間排出，就可以有效率的製造高可靠 性的電子模組。亦即，若能夠有效率的使接著劑5〇在半導 體裝置1與配線基板40之間流動，就可以有效率的製造高 可靠性的電子模組。 ^ 然而，如先前所說明般，半導體裝置1包含沿著—直線 100排列之複數的樹脂突起20。然後，樹脂突起2〇為朝與 直線100相交之方向延伸的形狀。因此，根據半導體裝置 1，可以使接著劑50變得容易在與直線1〇〇相交之方向流 動。詳細來說，根據半導體裝置丨，接著劑5〇可以在相$ 的2個樹脂突起20之間流動。亦即，接著劑5〇經由樹脂突 起20之間，可以流動於與直線1〇〇相交之方向。此外，樹 • 脂突起2〇為朝與直線100相交之方向延伸的形狀。因此， 接著劑50在與直線100相交之方向流動的情形，接著劑5〇 係沿著樹脂突起20流動。亦即，藉由樹脂突起汕，可控制 接著劑50之流動方向。由此，根據半導體裝置i，可以降 低構裝時之接著劑50之流動阻力。因此，根據半導體裝置 1 ’構裝時，接著劑50變得不易殘留於樹脂突㈣與配線 基板40 (電性連接部45)之間，可以確實㈣性連接電性連 接部30與電性連接部45。此外，由於接著劑5〇之流動阻力 變小，故可以有效率地構裝半導體裝置i。 113447.doc -12· 1309867 亦即，根據本實施形態之半導體裝置，可以提供能有效 率地製造高可靠性之電子模組的半導體裝置。 圖4及圖5係用於說明有關適用本發明之實施形態的變形 例之半導體裝置的圖。 圖4所示之例中，樹脂突起21為與直線100正交地延伸的 /狀此外圖4所示之例中，電極丨4亦可以並列於與直 線1〇0相交之方向。換言之’電極14亦可以配置成可分成 延伸於與直線100相交之方向的複數之群組。此時，該群 、且亦可以藉由與樹脂突起21平行排列之複數電極14構成。 圖5所示之例中，樹脂突起22係為沿著中心與半導體基 板之對角線的交點一致的假想圓或橢圓（未圖示）之接線 方向延伸之形狀。 藉由此等的半導體裝置’亦可得到與半導體裝置1相同 效果。因此，可以有效率的製造可靠性高的電子模組。 再者，本發明並不限定於上述之實施形態者，可以做各 種的變化。例如，本發明包含與實施形態中說明之構成實 質上相同的構成（例如功能、方法及結果相同之構成，或 者目的及效果相同之構成此外，本發明包含替換實施 形逋中說明之構成之非本質的部份。此外，本發明包含可 發揮與實施形態中說明之構成相同的作用效果之構成或可 以達成相同目的之構成。此外，本發明包含於實施形態中 說明之構成上添加周知技術之構成。 【圖式簡單說明】 圖UA)〜圖1(C)係用於說明有關適用本發明之實施形態 113447.doc -13- 1309867 的半導體裝置之圖。 之實施形態 的半導體裝 之變形例的 之變形例的 圖2(A)〜圖2(C)係用於說明有關適用本發明 的半導體装置之圖。 圖3係用於說明有關適用本發明之實施形態 置之圖。 圖4係用於說明有關適用本發明之實施形態 半導體裝置之圖。 圖5係用於說明有關適用本發明之實施形態 半導體裝置之圖。 【主要元件符號說明】 1 半導體裝置 10 半導體基板 12 積體電路 14 電極 16 鈍化膜 20 樹脂突起 21 樹脂突起 22 樹脂突起 30 電性連接部 32 配線 40 配線基板 42 底部基板 44 配線圖案 45 電性連接部 113447.doc -14- 1309867 50 接著劑 52 接著層 100 直線
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Claims (1)

130鄉獅2_號專利申請案
中文申請專利範圍替換本(9'7年12月） 十、申請專利範圍： 1. 一種半導體裝置，包含： 半導體基板，其形成有複數之電極； - 純化膜’其係於前述半導體基板上，以使前述複數之 電極露出之方式形成； 複數之樹脂突起，其形成於前述鈍化膜上，並沿一直 線排列；及 • 複數之電性連接部，其形成於各個前述複數之樹脂突 起上，並電性連接於前述複數之電極； 月’j述複數之樹脂突起係形成為與前述直線斜向相交之 方式延伸的形狀， 月1j述複數之樹脂突起之長邊方向係對前述直線斜向相 交， 月’j述複數之電極係沿著前述直線排列， 前述直線係沿著前述半導體基板之前述複數之電極所 寒形成面之邊延伸， 各個前述複數之電性連接部係由各個前述複數之電極 上引出至各個前述複數之樹脂突起上而形成之配線的一 部分， 月'j述配線係於各個前述複數之樹脂突起之兩側與前述 純化膜接觸之方式形成。 2·如請求項1之半導體裝置，其中前述半導體基板為半導 體晶片。 3.如請求項1或2之半導體裝置，其中前述半導體基板之前 113447-971231.d〇( 1309867 述電極的形成面為長方形，前述直線係沿前述長方形的 長邊延伸。
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