TWI304642B - - Google Patents

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Publication number
TWI304642B
TWI304642B TW91103262A TW91103262A TWI304642B TW I304642 B TWI304642 B TW I304642B TW 91103262 A TW91103262 A TW 91103262A TW 91103262 A TW91103262 A TW 91103262A TW I304642 B TWI304642 B TW I304642B
Authority
TW
Taiwan
Prior art keywords
layer
wafers
oxide layer
wafer
thin
Prior art date
Application number
TW91103262A
Other languages
English (en)
Chinese (zh)
Inventor
Zhi-Hao Lin
Pu Fan Chen
Fei-Wen Zheng
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW91103262A priority Critical patent/TWI304642B/zh
Application granted granted Critical
Publication of TWI304642B publication Critical patent/TWI304642B/zh

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW91103262A 2002-02-25 2002-02-25 TWI304642B (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW91103262A TWI304642B (ja) 2002-02-25 2002-02-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW91103262A TWI304642B (ja) 2002-02-25 2002-02-25

Publications (1)

Publication Number Publication Date
TWI304642B true TWI304642B (ja) 2008-12-21

Family

ID=45070983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91103262A TWI304642B (ja) 2002-02-25 2002-02-25

Country Status (1)

Country Link
TW (1) TWI304642B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952153A (zh) * 2020-08-21 2020-11-17 浙江晶科能源有限公司 隧穿氧化层的制备方法、太阳能电池及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952153A (zh) * 2020-08-21 2020-11-17 浙江晶科能源有限公司 隧穿氧化层的制备方法、太阳能电池及其制备方法
CN111952153B (zh) * 2020-08-21 2023-08-22 浙江晶科能源有限公司 隧穿氧化层的制备方法、太阳能电池及其制备方法

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