TWI303420B - High density read only optical disc - Google Patents

High density read only optical disc Download PDF

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Publication number
TWI303420B
TWI303420B TW093129965A TW93129965A TWI303420B TW I303420 B TWI303420 B TW I303420B TW 093129965 A TW093129965 A TW 093129965A TW 93129965 A TW93129965 A TW 93129965A TW I303420 B TWI303420 B TW I303420B
Authority
TW
Taiwan
Prior art keywords
layer
dielectric layer
read
optical disc
density
Prior art date
Application number
TW093129965A
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English (en)
Other versions
TW200514077A (en
Inventor
In-Oh Hwang
Joo-Ho Kim
Hyun-Ki Kim
Original Assignee
Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200514077A publication Critical patent/TW200514077A/zh
Application granted granted Critical
Publication of TWI303420B publication Critical patent/TWI303420B/zh

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    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • G11INFORMATION STORAGE
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    • G11B7/004Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/005Reproducing
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    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403Layers; Shape, structure or physical properties thereof
    • G11B7/24035Recording layers
    • G11B7/24038Multiple laminated recording layers
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    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24314Metals or metalloids group 15 elements (e.g. Sb, Bi)
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    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • GPHYSICS
    • G11INFORMATION STORAGE
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    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25713Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
    • GPHYSICS
    • G11INFORMATION STORAGE
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    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
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    • G11B7/2534Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
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    • G11B7/259Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Description

1303420 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種光碟,且特別是有關於一種高密 度唯讀光碟,係允許不超過雷射光束之讀取辨^率 (Resolution)限制之標記(孔洞)的讀取,藉由使用在光碟内 部之超解析(Super-Resolution)近場架構。 【先前技術】 依據光碟的特性,可以區分為唯讀記憶(RQM)光碟、 一次讀寫記憶(WORM)光碟、一次寫入多次讀取式光碟 (WORM)和重複可讀寫光碟。其中,唯讀記憶光碟僅允許 讀取燒錄在光碟上的資訊,一次寫入多次讀取式讀寫光碟 $許將資訊燒錄在光碟上一次,而重複可讀寫光碟則允許 資訊多次的燒錄和抹除。 ,可重錄式光碟(CD-R)係一種一次寫入多次讀取式讀 j光碟,其具有記錄層(Recording Layer),係包括了例如青 監色、花青色或類似顏色的有機染料。為了使有機層分解, 可以使用-種具有78Gnm之波長的燒錄赫照射在記錄 層,並且可以讀取到lmW或更低之功率的記錄訊號。可 重錄式光碟具有大約65隨的錄製容量,因此被廣泛的 用於燒錄和讀取不同資料的類型,例如文字、音樂、影像 或類似的資料。 ^例如可重錄式辆或是可重複寫式光碟(⑶請)的光 子:己錄媒財利用波長為78Gnm的燒錄雷射,然:而此種燒 錄雷射光束並不適合用於誠影像的錄製,因而無法使用 14894 pif.doc 1303420
間爯 。具有2·6-4·7〇β的容量的數位視訊光碟,係使 用630-680之較短波長的雷射光束。而數位視訊光碟也可 以區分為唯讀式DVD(DVD),一次寫入多次讀出式 DVD(DVD R)和可抹除式 , 種燒錄雷射知在記錄層上,以轉摘 料。而以 DVD-RA1V[和 DVD-RW 變而改變光學特性來燒錄資料。由) DVD RW)就-次寫入多次讀出式dvd而言,係利用一
以轉換和分解記錄層來燒錄資 D-RW而言,係藉由相位的改 料。由於 DVD-R 就 DVD-ROM 種燒鐮雷射照、 一,,八 I, 叫々、V JL^-IV ^ ^ V JL^-IVWIVl 之相容性、價格和容解方面而論,與其他儲存媒體相較 下有,多的優勢’因此目前的研究發展都集中在D.r。 最近。午夕儲存媒體的發展,都為了解決一個最大的問 題,就是儲存舰的容量,並且已經有許多增加儲存容量 ,方去被研九出來。在習知的技術巾,資訊被燒錄在唯讀 二光,上係在基板上形成_個孔洞。當要讀取資訊時,係 取I置產生雷射光束來照射光碟,紐湘光感測 =來置測經由孔洞所反射之光束的強弱。例如,當有孔洞 ^ ’其反射光束係_,而當沒有孔哺,狀射光束為 夕=、、燒錄在唯-式柄上之資訊的容量,係主要依據有 取和微小的孔洞精確地形成在固定的區域上,以 用^胃取孔洞之雷射光束的準確度來決定。雖然由雷射 2體所產生的树可—由物縣焦,但是由於繞射的 〜曰,以及獅成的光束會具有有限的寬度,因此不會集 14894 pif.doc 1303420
Limit) 〇 f,i (Diffra〇ti〇n 鏡增加,都可以增加燒錄的容量 飞的數值孔 術,是無法提供更短波長_@, 错鸱合佔制、土从山丄 田耵亚且增加物鏡的數值孔 、見將_使衣k的成本上升。此外,當物 ;=;為舆讀寫頭彼此碰撞而造成損壞’並進而造成 一般來說’紅光雷射係較常被使用在此技術中。假設 雷射的波長為635nm ’而物鏡的數值孔鏡為〇. 6,則讀取辨 識率的限制為265nm。 、、 一圖1係繪不一種在基板上形成鍍銀反射層之習知唯讀 光碟,孔洞長度與載波對雜訊比(以下簡稱⑽)的關係 圖。請參照@ 1,當孔洞長度不小於㈣nm時,⑽係不小 於40dB,並且如孔洞的燒錄資訊係平滑地被讀取。但是, 當孔洞的長度小於300 nm時,CNR會急速的下降,並且當 孔洞長度不大於250 nm時,CNR會接近〇。 為了要克服項取辨識率的限制,一種具有超解析 (Super-reso 1 u t i on )近場(Near-F i e 1 d )結構(請參照下述 的超解析結構〃)的光碟在最近已經被研究出來。以超解 析結構而言,一種特殊罩幕層係形成在光碟中,並且當讀 取資訊時,表面電漿(Surface Plasmon)會被產生在所使用 14894 pif.doc 7 1303420 的罩幕相。例如’假設在—光彻具有氧化銀的罩幕層, 二銀離子和氧離子,並且被解離的“ 產生表面電漿。藉由表面電漿的近場讀取是可能 、’亚且可以克服讀取辨識率限獅問 的燒錄標記可以被讀取。 双於非吊小 ,2絲示習知具有由氧化銀所組成之罩幕層。的可 G例1、構和原理。請參照圖2,可燒錄光碟100 匕括例如ZnS-S^所組成的介 成的罩幕屬11,而义為_不餘:列如由罐所組 的介電層14、例如由GeSbT二例如由ZnS—Si〇2所組成 所组赤66入帝® η 跖仏所組成的記錄層12、ZnS~Si〇2 在基板ioV*。曰、以及反射層13,係彼此依照順序堆疊 上,10 15mW的雷射光束係照射在記錄層12 的動作。在這個例子中,氧化銀會被 候,這些細小的微小銀教早H。在進行讀取動作的時 而,如果在唯讀光碟上,次^每在表面上形成電漿。然 基板10上而錢砂胃δΚ如軸孔_型式燒錄在 銀離子和氧氣的過程It序時,就不會發生氧化銀解離成 而使得在_低功率ϋ如何選擇光碟㈣構和材質’ 與具有超解析的姓槿:丄"束對唯讀光碟進行燒錄時,會 【發明内容】 光碟有相同的效率,是非常困難的。 碟,目的就是在提供—種高密度唯讀光 〜有Α辨識率架構之光碟具有同樣之資訊燒 14894 pif.doc 1303420 錄的效率。 本發明的再一目的就是在提供一 唯讀光碟上之資訊的方法。’、〶取“在高密度 本發明的又一目的就是在提供一 唯讀光碟上之資訊的裳置。仏種噴取燒錄在高密度 本發明的觀點’本發明係提 賣 碟,包括··一基板,孫1古力、门L 搜回在度唯續尤 取協助層;一第一介電;.以上;-結晶狀讀 物所組成。 θ ’及—罩幕層,係由金屬氧化 度唯g碑:^ ’本發明係提供—種讀取燒錄在高密 的裝置’係藉由具有超解析架構之電 易懂上Ϊ和其他目的、特徵和優點能更明顯 明如下。,牛較佳貫施例,並配合所附圖式,作詳細說 【實施方式】 仲=係洋細敛述本發明之實施例,而在每個實施例所 不中’類似的構件會使用相同的標號。以下的實 把例係配合圖示來解釋本發明。 、 200 係緣不依照本發明之一較佳實施例的—種光碟 =t 目。請參照圖3 ’在光碟200中,具有結晶狀 助層5〇、第—介電層2Q和罩幕層u,係依照順序 /成在具有孔洞結構的透明基板1〇上。 基板10所選擇之材質,係具有對燒錄雷射之波長範圍 14894 pif.doc !303420 =勺南透明度、等效電阻、熱電阻、環境電阻以及類似 <勺 > 數來挑選,並且要能夠由一般基板的製造方法來製 作,例如注入成形(Injecti〇nM〇lding)的方法。而這些材料 包括了聚碳酸酯、異丁稀酸、環氧化物、聚酯、非晶聚烯 烴以及類似的化合物。 址古結晶狀的讀取協助層50係形成用來在讀取資訊上提 $兩反射比時,能夠增加超解析架構的效果。如上所述, 二使用在光碟上由金屬氧化物所組成的罩幕層I〗,以形成 ^面^水的方式來維持超解析架構的效果時,此金屬氧化 成細小的金屬粒子和氧氣。當在讀取週期間所使 合之雷射功率的能量不適合解離金屬氧化物時,則可能不 二:Ϊ ί面電漿。然而,少量的金屬粒子會以還原(Reduced: 可二:ί於罩幕層11中,並且這種金屬粒子還原的功能 做表面電漿源。此時,讀取協助層5 G可以增強罩幕 g U之超解析架構的效果。 =罩幕層u為金屬氧化物時,則罩幕層Η的反射比 Γ匕’讀取協助層5〇也有反射層的功能。也就是 的/Β彳上助層5。係結晶狀的’以用來消除在起始階段中 ;二sll。換句話說…般使用在反射層或讀取協助
Ag-in_sb_Te的合金在形成薄膜之後,會 於第一 狀’因此第—次讀取期間的反射比,會不同 4=,期_反射比。為了解決這_題,在製作 ===立刻需要進行—個初始的程序。在此程序 内非s曰層會在光碟製作完畢後,立刻轉變為結晶狀,但 14894 pif.doc 1303420 疋化就會增加額外的成本和製程數。然而,若是使用 日協助層二則在其形成的時候就是結晶的狀態,因此在本發 〜、二了 X省略上述的初始程序。本發明並沒有特別限 疋,於、纟口日日狀讀取協助層的材料,例如可以使用包括% 的單一材料,歧個混合了 Te和包括了 Sb、Sn、Pb、 Bi Ge和As至少其中之一的材料。而一般來說,本發明 或是Sb2Te3。—般的情況下,本發明會藉由例 二工’儿積、電子束或是濺鍍的方式來形成5-50nm厚度 的項取協助層,以確保其具有足夠的反射比和可靠度。 用於罩幕層11的金屬氧化物可以是PtOx、PdOx、 ^ιιΟγ Ag〇x或是上述材料混合物,其中X為正數,並且 最好=0.1-2.5之間的數目。罩幕層係例如用濺鍍的方式形 f4—二利用Pt〇x、氬和氧形成罩幕層時,係將其投入至真 二今裔中,並且利用白金當作目標進行濺鍍,因此所形成 之罩幕層的厚度大約只有1·5·10·0ηηι。 ^在依據本發明之較佳實施例的光碟内,第一介電層14 ,形成在讀取協助層50和罩幕層11之間,以絲當做擴 而在本實施例中,本發明所提出光碟結構更包 、弟一介電層30,係位於讀取協助層50和基板1〇之間, 並可以包括第三介電層40,係位於罩幕層11上。第 、":層30可以保護基板由於熱所產生的損壞,並且也可 以保護罩幕層11。圖4係會是本發明第四實施例的一種光 碟300的結構圖。 介電層的材料為ZnS-Si02、SiOx、SiNx、A10x或是 14894 pif.doc 11 130342ο ΑΐΝχ,其中x為正整數。 式光碟另—實施例之讀取燒錄在高贿唯讀 卜在超解射在 來娜繞錄在光碟上之讀取資訊。^表面電襞’以用 式切本=^—實闕來讀取_在轉度唯讀 、超解析架構資訊燒錄’並且也可 例來更詳細地敘述本發明。而以下的實 明本㈣之目的,並不料限定本發明。 上,开Γ成係3Γ殘,的方式在厚度為0.6mm的聚石炭酸醋基板 而聚碳H 層,以#做結晶狀的讀取協助層, ttr亚且在聚碳_基板上形成多數個孔洞。缺後, ί二層上,係透過麵的方式以 成弟一介電層。接著,注入氬氣和氧到真空容器内, 二。ίΐ白金當作目標來濺鍍,以形成厚度為3.5nm的 X 1。同時,氬氣的流量為15sccm,而氧係的流量 貝J為9Sccm,並且沉積壓力為3 8mT〇rr。 复;實施例 當做讀取協助 本貫施例的唯讀式光碟除了使用sb2丁& 層外,其餘的條件都與第一實施例相同。 蓋三實施例 、 14894 pif.doc 1303420 -實施例相同 第四實施例 本實施例的唯讀式光碟除了在基板和讀取協助層之間 另外形成25nm$度的ZnS_Si〇2之外,其餘 本實施例的唯讀式光碟除了在罩幕層上另外再 50nm厚度_ ZnS_Si〇2之外,其餘的條件都與第三實 例相同。 '
I 在軌距為0.74,而厚度為〇.6mm的聚碳酸醋基板 上’以濺鍍的方式形成一銀層以當做反射層,並且在聚碳 酸酯基板上形成多數個孔洞,因此,本實施例所揭露的^ 讀式光碟不具有罩幕層。 比較實施例2 在軌距為0·74μπι而厚度為0·6ηυη的聚碳酸酯基板 上,依序形成厚度為25nm的介電層和厚度為3 5nm的罩 幕層,並且在聚碳酸酯基板上形成多數個孔洞,因此本實 施例所揭露的唯讀式光碟不具有讀取協助層。 只 實驗例1 由第一實施例到第四實施例以及比較實施例丨和2中 之光碟,在具有波長為635nm和讀取頭之數值孔徑為〇 6〇 的DVD讀取裝置上的表現進行評價。其尹,線速度(Line Speed)為3m/s,而讀取功率為3mW。其表現結果係如圖5 所示。在圖5中,標示E係代表上述的實施例,而標示cE 則代表對比實施例。此外,本實施例中的讀取辨識率限制 14894 pif.doc 13 1303420 (λ/4ΝΑ)為 265nm,而在 DVn 她m。再對比實施例!中:⑷、的孔洞長度為 和200mn時係益法取m的先碟’在孔润長度* 250nm 讀取辨識率(即265nm):在=訊比(⑽’因而小於 或是更低的載波對雜訊二獲= 實施例中,在孔洞長度為抑+在本1^狀弟—幻弟四 更高的載波_概。在第獲得幼綱或是 等級是有實用價值的對相比,這種載波對雜訊比的 照本㈣之—她實施_—種燒錄和 /或稷4置之方塊圖。請參照圖6,此种 imr早塌1會將資料傳送至碟片或· ^,/、為柄明之實施例中所提供的資訊儲存媒體。而栌 據圖3到4所述之内容,而由碟片· 综上所述,本發明之實施例所提供的高密 碟不需要短波長㈣以及Α數值孔徑的物鏡。^ 可以藉由使用結晶狀的讀取協助層;: 同效率的反射比,而可以增進超解析架構的效能,並且 ?:=需要用於結晶化的起始程序,因而無論對成本或 疋製程數的降低都有很大的優勢。 一 雖然本發明已以較佳實施例揭露如上,然1、、, 限定本發明,任何熟習此技藝者,在不脫離ϊ發:之精= 14894 pif.doc 14 130342ο $圍内’當可作些許之更動與_,因此本發明之保護 已圍當視後附之申請專利範圍所界定者為準。 〃 【圖式簡單說明】 ” 圖1躲^齡基板均賴 先碟之孔洞長度與載波對雜訊比率 3准項 圖。 凡比半(以下間稱CNR)的關係 圖2係纟會示習知具有由冑 燒錄光碟觸的架構和原理减銀軌成之罩幕層11的可 圖3係繪示依照本發明 構示意圖。 較锃貫施例的一種光碟架 圖4係繪示本發明第四實 圖。 例的一種光碟300的結構 實施例和比較實施例 實施例的一種燒錄和 圖5係繪示本發明之第一至第 1和2之表現的評價結果圖表。四 圖6係繪示依照本發明之— /或複製裝置之方塊圖。 又土 【主要元件符號說明】 10 •基板 11 :罩幕層 12 記錄層 13 反射層 14 介電層 15 金屬粒子 20 : 第一介電層 14894 pif.doc 15 1303420 30 :第二介電層 40 :第三介電層 50 :讀取協助層 100、200、300 :光碟 14894 pif.doc

Claims (1)

1303420 爲第93129965號中文專利範圍無劃線修正本 %年(〇月如修正本j 修正日期:9ό年1〇月26日 十、申請專利範圍: 1·一種高密度唯讀光碟,包括·· 一基板,係具有多數個孔洞; 一結晶狀頃取協助層; 一第一介電層;以及 -罩幕層,係由金屬氧化物所組成, 其中該結晶狀讀取協助層、該第一 係依序堆疊於該基板上。該弟"電層和該罩幕層 中該結晶狀讀取協助層包括錄(Sb) ^度唯項光碟,其 3·如申請專利範圍第丨項所述之古二)或二者之混合。 中該結晶狀讀取協助層包括Sb、或密度唯讀光碟,其 4·如申請專利範圍第i項所述之2 =。 中該金屬氧化物包括氧化鉑、氧化鈀、° 度唯讀光碟,其 四者之混合物。 美化金、氧化銀或 5. 如申請專利範圍第1項所述之言汽 包括一第二介電層,係配置於該基板唯讀光碟,更 層之間。 邊、、、°晶狀讀取協助 6. 如申請專利範圍第Ϊ項所述之古$ 中該金屬氧化物係由氧化鉑所組成。阿杳度唯讀光碟,其 7. 如申請翔簡第〗項所述之高 包括一第三介電層,係配置於該罩幕層*度唯讀光碟,更 8. 如申請專利範圍第丨項所述之言汽 中該第一介電層包括硫化鋅_二氧化石夕^二度唯讀光碟,其 氧化矽、氮化矽、 14894 pif.doc 17 1303420 氧化銘和氮化銘其申之^一。 。9·如申請專利範圍第5項所述之高密度唯讀光碟,其 中該第一介電層和該第二介電層包括硫化鋅_二氧化矽、& 化矽、氮化矽、氧化鋁和氮化鋁其甲之一。 羊 10·如申請專利範圍第5項所述之高密度唯讀光碟,其 中該第一介電層、該第二介電層和該第三介電層包括硫& 鋅_二氧化矽、氧化矽、氮化矽、氧化鋁和氮化鋁其中之一。 11·如申請專利範圍第丨項所述之高密度唯讀光碟,其 :該^板包括一材質,其具有對一燒錄雷射之波長範圍^ a的咼透明度、一等效電阻、熱電阻、環境電阻和可能 該基板造成影響的因素。 、 12·如申請專利範圍第丨項所述之高密度唯讀光碟,其 中該基板係聚碳酸g旨、異了稀目1、環氧化物、聚酯 聚烯烴或五者之混合物。 曰曰 13·如申請專利範圍第丨項所述之高密度唯讀光碟,盆 中该罩幕層包括感應之金屬粒子。 14·如申請專利範㈣1項所述之高密度唯讀光碟,立 中該罩幕層之厚度大約在15至则nm之間。 〜 15·如申轉利範圍第i項所述之高密度 中該基板具有大約〇.74//m之執距。 磲^ 取燒錄在如中請專利範圍第1項所述之高 資訊的方法,係藉由具有超解析結構之; 14894 pif.doc 18 1303420 七、 指定代表圖: (一) 本案指定代表圖為:圖(4 )。 (二) 本代表圖之元件符號簡單說明: 10 :基板 11 :罩幕層 20 :第一介電層 30 :第二介電層 40 :第三介電層 50 :讀取協助層 300 :光碟 八、 本案若有化學式時,請揭示最能顯示發明特徵 的化學式: 無 14894 pif.doc 4
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