TWI302908B - Additives to prevent degradation of alkyl-hydrogen siloxanes - Google Patents

Additives to prevent degradation of alkyl-hydrogen siloxanes Download PDF

Info

Publication number
TWI302908B
TWI302908B TW92125785A TW92125785A TWI302908B TW I302908 B TWI302908 B TW I302908B TW 92125785 A TW92125785 A TW 92125785A TW 92125785 A TW92125785 A TW 92125785A TW I302908 B TWI302908 B TW I302908B
Authority
TW
Taiwan
Prior art keywords
linear
methylphenyl
methyl
group
decane
Prior art date
Application number
TW92125785A
Other languages
English (en)
Chinese (zh)
Other versions
TW200404769A (en
Inventor
Daniel J Teff
Gregory B Smith
John L Chagolla
Tim S Andreyka
Original Assignee
Fujifilm Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials filed Critical Fujifilm Electronic Materials
Publication of TW200404769A publication Critical patent/TW200404769A/zh
Application granted granted Critical
Publication of TWI302908B publication Critical patent/TWI302908B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/05Alcohols; Metal alcoholates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402Reduction of impurities in the source gas
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/13Phenols; Phenolates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/12Polysiloxanes containing silicon bound to hydrogen
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane
TW92125785A 2002-09-18 2003-09-18 Additives to prevent degradation of alkyl-hydrogen siloxanes TWI302908B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41165102P 2002-09-18 2002-09-18

Publications (2)

Publication Number Publication Date
TW200404769A TW200404769A (en) 2004-04-01
TWI302908B true TWI302908B (en) 2008-11-11

Family

ID=32030703

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92125785A TWI302908B (en) 2002-09-18 2003-09-18 Additives to prevent degradation of alkyl-hydrogen siloxanes

Country Status (6)

Country Link
US (3) US7129311B2 (US20040127070A1-20040701-C00015.png)
EP (1) EP1573086A4 (US20040127070A1-20040701-C00015.png)
JP (1) JP2006516302A (US20040127070A1-20040701-C00015.png)
KR (1) KR20050089147A (US20040127070A1-20040701-C00015.png)
TW (1) TWI302908B (US20040127070A1-20040701-C00015.png)
WO (1) WO2004027110A2 (US20040127070A1-20040701-C00015.png)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7456488B2 (en) 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7101948B2 (en) 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
US20080042105A1 (en) * 2001-12-21 2008-02-21 Air Products And Chemicals, Inc. Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane
RU2319786C2 (ru) * 2002-06-28 2008-03-20 Смс Демаг Акциенгезелльшафт Применение разделяющего газа при непрерывном нанесении покрытия погружением в расплав
US7646081B2 (en) 2003-07-08 2010-01-12 Silecs Oy Low-K dielectric material
JP4539131B2 (ja) * 2004-03-16 2010-09-08 住友化学株式会社 有機ケイ素系化合物、及びその製造方法
JP2005294333A (ja) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置
JP3788624B1 (ja) * 2005-01-18 2006-06-21 旭電化工業株式会社 シロキサン化合物及びフェノール化合物を含有してなる組成物
EP2256123B1 (en) * 2005-01-31 2013-08-14 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
US8513448B2 (en) 2005-01-31 2013-08-20 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
US7871536B2 (en) 2005-09-12 2011-01-18 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
WO2007033123A2 (en) * 2005-09-12 2007-03-22 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
US7883639B2 (en) * 2005-09-12 2011-02-08 Fujifilm Electronic Materials, U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
JP4641933B2 (ja) * 2005-11-28 2011-03-02 三井化学株式会社 薄膜形成方法
JP2007157870A (ja) * 2005-12-02 2007-06-21 Renesas Technology Corp 半導体装置及びその製造方法
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20080141901A1 (en) * 2006-12-18 2008-06-19 American Air Liquide, Inc. Additives to stabilize cyclotetrasiloxane and its derivatives
DE102006060355A1 (de) * 2006-12-20 2008-06-26 Wacker Chemie Ag Verfahren zur Herstellung von Tetramethylcyclotetrasiloxan
ES2426666T3 (es) * 2007-01-12 2013-10-24 Utilx Corporation Composición y procedimiento para restaurar un cable eléctrico e inhibir la corrosión en el núcleo conductor de aluminio
US8173213B2 (en) 2008-05-28 2012-05-08 Air Products And Chemicals, Inc. Process stability of NBDE using substituted phenol stabilizers
TWI490363B (zh) * 2009-02-06 2015-07-01 Nat Inst For Materials Science 絕緣膜材料、使用該絕緣膜材料的成膜方法及絕緣膜
WO2015157202A1 (en) 2014-04-09 2015-10-15 Corning Incorporated Device modified substrate article and methods for making
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US11014819B2 (en) 2013-05-02 2021-05-25 Pallidus, Inc. Methods of providing high purity SiOC and SiC materials
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
US10046542B2 (en) 2014-01-27 2018-08-14 Corning Incorporated Articles and methods for controlled bonding of thin sheets with carriers
KR102573207B1 (ko) 2015-05-19 2023-08-31 코닝 인코포레이티드 시트와 캐리어의 결합을 위한 물품 및 방법
CN107810168A (zh) 2015-06-26 2018-03-16 康宁股份有限公司 包含板材和载体的方法和制品
JP6621226B2 (ja) * 2016-02-15 2019-12-18 国立研究開発法人産業技術総合研究所 シロキサン及びその製造方法
TW201825623A (zh) 2016-08-30 2018-07-16 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
WO2019118660A1 (en) 2017-12-15 2019-06-20 Corning Incorporated Method for treating a substrate and method for making articles comprising bonded sheets
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
CN113801155B (zh) * 2020-06-15 2023-10-31 中国石油化工股份有限公司 适用于制备石英砂防吸附亲水涂层的化学剂及其制备和应用
CN113030295B (zh) * 2021-02-08 2023-02-03 广州海关技术中心 一种气相色谱-质谱/质谱法同时测定硅橡胶制品中21种硅氧烷类化合物的残留量的方法
KR102567948B1 (ko) * 2021-09-23 2023-08-21 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제
CN116355007A (zh) * 2023-03-31 2023-06-30 京东方科技集团股份有限公司 六元杂环结构的有机化合物、电致发光器件及显示装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998865A (en) * 1975-03-12 1976-12-21 General Electric Company Process for the stabilization of hexamethyl-cyclotrisiloxane and the stabilized compositions resulting therefrom
US4234441A (en) * 1979-04-27 1980-11-18 Olin Corporation Silicone oil compositions containing silicate cluster compounds
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
DE4123423A1 (de) * 1991-07-15 1993-01-21 Wacker Chemie Gmbh Alkenylgruppen aufweisende siloxancopolymere, deren herstellung und verwendung
US5177142A (en) * 1991-08-22 1993-01-05 General Electric Company Silicone release coating compositions
FR2686091B1 (fr) * 1992-01-15 1994-06-10 Flamel Tech Sa Composition a base de polysilane (s).
US5470800A (en) * 1992-04-03 1995-11-28 Sony Corporation Method for forming an interlayer film
JP2938734B2 (ja) * 1993-11-26 1999-08-25 信越化学工業株式会社 低分子量ポリメチルシクロポリシロキサンの安定化方法
ES2210506T3 (es) * 1996-11-08 2004-07-01 Rhodia Chimie Composiciones reticulables que contienen aceites de siliconas funcionalizados y utilizacion de estas composiciones para preparar peliculas de poliuretanos.
EP0978539A4 (en) * 1997-04-24 2000-04-12 Kaneka Corp IMPACT RESISTANT THERMOPLASTIC RESIN COMPOSITION
US5783719A (en) * 1997-05-13 1998-07-21 Lexmark International, Inc. Method for making silicone copolymers
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7101948B2 (en) * 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
US6858697B2 (en) 2001-12-21 2005-02-22 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
TWI317749B (en) * 2002-02-15 2009-12-01 Kaneka Corp Graft copolymers and impact-resistant flame-retardant resin compositions containing the same
AU2003228495A1 (en) * 2002-04-11 2003-10-27 Honeywell International Inc. Thermally conductive coating compositions, methods of production and uses thereof
KR20040106396A (ko) * 2002-04-30 2004-12-17 카네카 코포레이션 폴리오르가노실록산 함유 그래프트 공중합체 조성물

Also Published As

Publication number Publication date
EP1573086A4 (en) 2012-10-03
US7531590B2 (en) 2009-05-12
EP1573086A2 (en) 2005-09-14
TW200404769A (en) 2004-04-01
KR20050089147A (ko) 2005-09-07
WO2004027110A3 (en) 2006-04-06
US20040127070A1 (en) 2004-07-01
JP2006516302A (ja) 2006-06-29
US20060270787A1 (en) 2006-11-30
WO2004027110A2 (en) 2004-04-01
US20060159861A1 (en) 2006-07-20
US7129311B2 (en) 2006-10-31

Similar Documents

Publication Publication Date Title
TWI302908B (en) Additives to prevent degradation of alkyl-hydrogen siloxanes
TWI286155B (en) Composition for film formation, method of film formation, and silica-based film
TWI232468B (en) Composition for film formation and material for insulating film formation
TW494131B (en) Coating solution for low dielectric constant silica film forming and substrate with the low dielectric constant film
JP2010065039A (ja) シクロテトラシロキサンを重合に対し安定化する方法及び組成物
EP1321469B1 (en) Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxanes
TW201000558A (en) Composition and fabrication method thereof, porous material and forming method thereof, interlayer insulation film, semiconductor material, semiconductor device, and low refractive surface protecting film
TW200404742A (en) Method for modifying porous film, modified porous film and use of same
US11739220B2 (en) Perhydropolysilazane compositions and methods for forming oxide films using same
EP1650250A1 (en) Silicon-containing polymer, process for rpoducing the same, heat-resistant resin composition, and heat-resistant film
TW200300435A (en) A stable composition, method for stabilizing a polysilica resin, and method for manufacturing an electronic device
TWI411639B (zh) 防止環烯烴衍生物降解之添加劑(一)
TW200927726A (en) Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor
US20210102092A1 (en) Perhydropolysilazane compositions and methods for forming nitride films using same
JP2010150656A (ja) コバルトカルボニル錯体組成物及びコバルト膜の形成方法
JP5583529B2 (ja) 金属化合物及び薄膜形成用原料
US11377359B2 (en) Process for producing liquid polysilanes and isomer enriched higher silanes
US20230279030A1 (en) Cyclosiloxanes and films made therewith
TW201237070A (en) A kit for producing a cured product, a composition for producing a cured product, a cured product and semiconductor light-emitting device
TW201000445A (en) Improved process stability of NBDE using substituted phenol stabilizers
JP2021147457A (ja) ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法
TWI278357B (en) Composition of coating precursor
TW201736261A (zh) 經摻雜之組成物及其製造方法與用途
TW200840865A (en) Photoresist cleaning agent with low etching rate and method of using the same

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent