TWI300969B - - Google Patents

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Publication number
TWI300969B
TWI300969B TW091109211A TW91109211A TWI300969B TW I300969 B TWI300969 B TW I300969B TW 091109211 A TW091109211 A TW 091109211A TW 91109211 A TW91109211 A TW 91109211A TW I300969 B TWI300969 B TW I300969B
Authority
TW
Taiwan
Prior art keywords
layer
pattern
mask
opening
forming
Prior art date
Application number
TW091109211A
Other languages
English (en)
Chinese (zh)
Inventor
Shr-Chi Shiu
Original Assignee
Nanya Plastics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Plastics Corp filed Critical Nanya Plastics Corp
Priority to TW091109211A priority Critical patent/TWI300969B/zh
Priority to US10/255,176 priority patent/US6858377B2/en
Application granted granted Critical
Publication of TWI300969B publication Critical patent/TWI300969B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/0882—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures wherein the dual damascene structure is in a photoresist layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW091109211A 2002-05-03 2002-05-03 TWI300969B (https=)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW091109211A TWI300969B (https=) 2002-05-03 2002-05-03
US10/255,176 US6858377B2 (en) 2002-05-03 2002-09-24 Dual damascene process using a single photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091109211A TWI300969B (https=) 2002-05-03 2002-05-03

Publications (1)

Publication Number Publication Date
TWI300969B true TWI300969B (https=) 2008-09-11

Family

ID=29268322

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091109211A TWI300969B (https=) 2002-05-03 2002-05-03

Country Status (2)

Country Link
US (1) US6858377B2 (https=)
TW (1) TWI300969B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10301291B3 (de) * 2003-01-15 2004-08-26 Infineon Technologies Ag Verfahren zum Einbringen von eine unterschiedliche Dimensionierung aufweisenden Strukturen in ein Substrat
TW200418716A (en) * 2003-03-21 2004-10-01 Hon Hai Prec Ind Co Ltd A cavity and the method for fabricating the same
KR100552816B1 (ko) * 2004-07-13 2006-02-21 동부아남반도체 주식회사 포토 마스크 및 그 제조방법과 포토 마스크를 이용한반도체 소자의 배선 형성방법
KR100691964B1 (ko) * 2004-12-29 2007-03-09 동부일렉트로닉스 주식회사 반도체 소자의 듀얼 다마신 식각 방법
TWI257177B (en) * 2005-07-27 2006-06-21 Quanta Display Inc Manufacturing processes for a thin film transistor and a pixel structure
KR100698102B1 (ko) * 2005-10-05 2007-03-23 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
US8017517B2 (en) * 2007-06-07 2011-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene process
CN110544671A (zh) * 2019-08-26 2019-12-06 上海新微技术研发中心有限公司 半导体结构的形成方法
CN110993561A (zh) * 2019-11-28 2020-04-10 福建省福联集成电路有限公司 一种防止金属连接线断连的方法
WO2022000478A1 (zh) * 2020-07-03 2022-01-06 欧菲光集团股份有限公司 线路板制作方法及线路板
US12230535B2 (en) * 2022-03-23 2025-02-18 Nanya Technology Corporation Method for fabricating semiconductor device with damascene structure
US12142518B2 (en) * 2022-03-23 2024-11-12 Nanya Technology Corporation Method for fabricating semiconductor device with damascene structure by using etch stop layer
US12159790B2 (en) * 2022-03-23 2024-12-03 Nanya Technology Corporation Method for fabricating semiconductor device with damascene structure by using etch stop layer
US12283518B2 (en) * 2022-05-25 2025-04-22 Nanya Technology Corporation Method for fabricating semiconductor device with contact structure
US12417982B2 (en) 2022-05-25 2025-09-16 Nanya Technology Corporation Semiconductor device with contact structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976968A (en) * 1997-10-14 1999-11-02 Industrial Technology Research Institute Single-mask dual damascene processes by using phase-shifting mask
US20030027419A1 (en) * 2001-08-02 2003-02-06 International Business Machines Corporation Tri-tone photomask to form dual damascene structures

Also Published As

Publication number Publication date
US20030207180A1 (en) 2003-11-06
US6858377B2 (en) 2005-02-22

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