doc/g I2835434twf. 九、發明說明： ^ 【發明所屬之技術領域】 本發明是有關於一種主動驅動之顯示器的製造方 法，且特別是有關於一種主動式有機電激發光顯示器與薄 膜電晶體陣列基板的製造方法。 【先前技術】 隨著高科技之發展，數位化之影像裝置已經成為在一 般曰常生活中所常見的產品，而目前在這些數位化之影像 鲁裝置中最受注目的當屬於以薄膜電晶體作為驅動元件的液 晶顯示器（Liquid Crystal Display，LCD)與有機電激發 光顯示器（organic electro-luminescence display，OELD)，其 中這些薄膜電晶體是形成於一薄膜電晶體陣列基板上。 圖1A至圖1E繪示為習知薄膜電晶體陣列基板製造流 程的剖面示意圖。請參照圖1A，習知是先在基板1〇〇上形 成多個薄膜電晶體110以及與其電性連接之掃瞄線(scan line)(未繪示）與資料線(date line)(未纟會示），然後在基 • 板1〇〇上形成保護層102覆蓋這些薄膜電晶體110、掃瞄 線與資料線。請參照圖1B，接著進行微影及蝕刻製程，以 於保遵層102中形成多個接觸窗開口（c〇nta(^ h〇ie)i〇4。其 中，這些接觸窗開口 104是暴露出薄膜電晶體11()的汲極 金屬層112。之後，請參照圖lc，在保護層1〇2上形成一 透明導電層106,且透明導電層1〇6是填入接觸窗開口 1〇4 而與薄膜電晶體110的汲極金屬層112電性連接。請失昭 圖1〇，在透明導電層1〇6上形成正型光阻層用' 128354¾ 4twf.doc/g 光罩120進行微影及触刻製程，以圖案化透明導電層·。 明參照圖1E，之後再移除光阻層⑽，即可在基板1〇〇上 定義出多個畫素電極13〇。 以一般的液晶顯示器來說，在形成圖1E之結構後， 即，致元成其薄膜電晶體陣列基板的製作。熟習此技藝者 應口亥知運’上㈣膜電晶體陣列基板的製程至少需要使用 五道光罩。然而，在主動式有機電激發光顯示器的製程中， 除I上述製程所使用的五道光罩以外，其必須再使用另一 道光罩來形成畫素隔離層(Pixel define layer，PDL)14〇，如 圖IF所示，以便於定義出後續有機電激發光層i5〇的配 置位置。換言之，在胃知主動式錢f激發光顯示器之薄 膜電晶體陣列基板的製程中，至少需要使用六道光罩，製 程相當複雜且成本花費不貲。 【發明内容】 本發明的目的就是在提供一種膜層的圖案化方法，此 圖案，方法可以節省-道黃絲程，進而降低製程成本。 =明的另-目的是提供一種薄膜電晶體陣列基板的 tr方法可節省至少—道黃光製程，進而降低製 程成本。 干哭2 目的是提供—種主動式有機電激發光顯 此樹節樹—道黃光製程，進而 本發㈣出—種朗的随化方法，此方法是先提供 -基板，且此基板上已形成有m接著，在此第 12835I^4twf.doc/g 一膜層中形成多個具有底切輪廓的凹槽與多個開口。然 後，在第一膜層上形成一第二膜層，且此第二膜層是填入 這些開口内，並在凹槽處自動分離，而於第一膜層上形成 多個圖案。 依知、本發明的較佳實施例所述，形成上述開口與凹槽 的方法例如是先在第一膜層上形成一光阻層，之後以一光 罩為罩幕，對此光阻層進行微影製程，以使光阻層暴露出 預定形成上述凹槽之處的部分第一膜層。其中，此光罩具 有遮光區、-透光區與一半透光區，而半透光區是對應 ^預疋I成上述這些開σ之處。然後，移除暴露出之部分 …膜層以及半透光區所對應之部分光阻層與第一膜層， 以形成上述之凹槽與上述之開σ。之後，移除此光阻層。 …依照本發明的較佳實施例所述，上述這些凹槽之預定 第7臈層以及半透光區所對應的部分光阻層 例如疋措由同一蝕刻製程來移除。 依知本發明的較佳實施例所述，移除上 一 層而凹槽的方法包括濕式姓刻或乾式么 方法是缚膜電晶體陣列基板的製造方法，此 個薄膜電S體且此基板上已形成有—保護層與多 各個薄膜ί⑽保護層是覆蓋於薄膜電晶體上，而 之薄膜電:的：丄而各接觸窗開口是暴露出其所對應 ㈣電日日體的雜金屬層。然後，在保護層 7 128354i^4twf.d〇c/g 明導電層，此透明導電層是填入這些接觸窗開口而與没極 - 金屬層電性連接。而且，透明導電層在這些凹槽處自動分 離，而形成多個畫素電極。 本發明提出一種主動式有機電激發光顯示器的製造方 法，此方法是先提供一基板，且此基板上已形成有一=護 層與多個薄膜電晶體。其中，保護層是覆蓋於薄膜電晶體 上，而各個薄膜電晶體包括一源極金屬層與一沒極:屬 層。接著，在保護層中形成多個接觸窗開口以及多個凹槽。 • 其中，各凹槽具有底切輪廓，而各接觸窗開口是暴露出曰其 所對應之溥膜電晶體的汲極金屬層。之後，在保護層上形 成-透明導電層，此透明導電層是填入這些接觸窗^口^ 與没極金屬層電性連接。而且，透明導電層在這些凹槽處 自動^離’而形成多個畫素電極。然後，形成—畫素二離 層覆蓋於基板上，且此畫素隔離層是暴露出各晝素電極的 -部分:之後再於暴露出之這些晝素電極上形成有機發光 層，接者在基板上全面性地形成陰極層，以覆蓋住有機發 Φ 光層。 x 依照本發明的較佳實施例所述，形成上述接觸窗開口 與凹槽的方法例如是先在保護層上形成一光阻層，之後以 -光罩為罩幕’對此光阻層進行微影製程，以錢阻層暴 冑出預定形成上述凹槽之處的部分該保護層。其中，此光 罩具有-遮光區、-透光區與一半透光區，而^透光區是 對應於預定形成上述這些接觸窗開口之處。然後，移除此 灰阻屉。 8Doc/g I2835434twf. IX. Description of the invention: ^ Technical Field of the Invention The present invention relates to a method for manufacturing an actively driven display, and more particularly to an active organic electroluminescent display and a thin film transistor array. A method of manufacturing a substrate. [Prior Art] With the development of high technology, digital imaging devices have become a common product in ordinary life, and currently the most noticeable in these digital imaging devices is the use of thin film transistors. A liquid crystal display (LCD) of a driving element and an organic electro-luminescence display (OELD), wherein the thin film transistors are formed on a thin film transistor array substrate. 1A to 1E are schematic cross-sectional views showing a manufacturing process of a conventional thin film transistor array substrate. Referring to FIG. 1A, it is conventional to form a plurality of thin film transistors 110 on a substrate 1 and a scan line (not shown) and a date line electrically connected thereto. A protective layer 102 is formed over the substrate 1 to cover the thin film transistors 110, the scan lines and the data lines. Referring to FIG. 1B, a lithography and etching process is then performed to form a plurality of contact window openings (c〇nta(^h〇ie)i〇4) in the protective layer 102. wherein the contact window openings 104 are exposed to the film. The gate metal layer 112 of the transistor 11 (). Thereafter, referring to FIG. 1c, a transparent conductive layer 106 is formed on the protective layer 1〇2, and the transparent conductive layer 1〇6 is filled in the contact opening 1〇4. It is electrically connected to the gate metal layer 112 of the thin film transistor 110. Please form a positive photoresist layer on the transparent conductive layer 1〇6, and use the '1283543⁄4 4twf.doc/g mask 120 for lithography. And a etch process to pattern the transparent conductive layer. Referring to FIG. 1E, after removing the photoresist layer (10), a plurality of pixel electrodes 13 定义 can be defined on the substrate 1 〇. For example, after forming the structure of FIG. 1E, that is, the fabrication of the thin film transistor array substrate, it is necessary to use at least five masks for the process of the above-mentioned (four) film transistor array substrate. However, in the process of the active organic electroluminescent display, except for the above process In addition to the five masks used, it is necessary to use another mask to form a Pixel define layer (PDL) 14〇, as shown in Figure IF, in order to define the subsequent organic electroluminescent layer i5〇. In the process of configuring the thin film transistor array substrate of the active display device, at least six photomasks are required, and the process is quite complicated and costly. [Invention] The object of the present invention is Providing a film layer patterning method, the method can save the yellow line process, thereby reducing the process cost. The other purpose is to provide a thin film transistor array substrate tr method to save at least - yellow light Process, and thus reduce the cost of the process. Dry crying 2 is to provide a kind of active organic electro-optic light to show the tree-tree-dao Huangguang process, and then the hair (4) out of the species-language method, this method is provided first a substrate on which a m has been formed, and in which a plurality of grooves having an undercut profile and a plurality of openings are formed in a film layer of 12835I^4twf.doc/g. A second film layer is formed on a film layer, and the second film layer is filled in the openings, and is automatically separated at the groove, and a plurality of patterns are formed on the first film layer. In a preferred embodiment, the method for forming the opening and the recess is to form a photoresist layer on the first film layer, and then use a mask as a mask to perform a lithography process on the photoresist layer. Exposing the photoresist layer to a portion of the first film layer where the recess is formed. The reticle has a light-shielding region, a light-transmitting region and a half-light-transmissive region, and the semi-transmissive region is corresponding to The above-mentioned σ is formed. Then, the exposed portion of the film layer and the partial photoresist layer corresponding to the semi-transmissive region and the first film layer are removed to form the above-mentioned groove and the above-mentioned opening σ. After that, the photoresist layer is removed. In accordance with a preferred embodiment of the present invention, the predetermined seventh layer of the recesses and a portion of the photoresist layer corresponding to the semi-transmissive regions are removed by the same etching process. According to a preferred embodiment of the present invention, the method of removing the upper layer and the recess includes wet-type or dry-type method, which is a method for manufacturing a bonded-film array substrate, the thin-film electric S-body and the substrate A protective layer and a plurality of individual films are formed thereon. The protective layer is overlying the thin film transistor, and the thin film is electrically: and the opening of each contact window is exposed to the corresponding (four) electric metal layer of the solar cell. . Then, a conductive layer is formed on the protective layer 7 128354i^4twf.d〇c/g, and the transparent conductive layer is filled in the contact window openings to be electrically connected to the gate electrode-metal layer. Moreover, the transparent conductive layer is automatically separated at these grooves to form a plurality of pixel electrodes. The present invention provides a method of fabricating an active organic electroluminescent display by first providing a substrate on which a protective layer and a plurality of thin film transistors have been formed. Wherein, the protective layer is covered on the thin film transistor, and each of the thin film transistors comprises a source metal layer and a immersion: genus layer. Next, a plurality of contact opening and a plurality of grooves are formed in the protective layer. • wherein each groove has an undercut profile and each contact opening is a layer of a drain metal that exposes the corresponding enamel transistor. Thereafter, a transparent conductive layer is formed on the protective layer, and the transparent conductive layer is filled in the contact openings to be electrically connected to the electrodeless metal layer. Moreover, the transparent conductive layer is automatically separated from these grooves to form a plurality of pixel electrodes. Then, a pixel-forming dichroic layer is coated on the substrate, and the pixel isolation layer exposes a portion of each of the halogen electrodes: an organic light-emitting layer is formed on the exposed halogen electrodes, and the A cathode layer is formed on the substrate in a comprehensive manner to cover the organic light-emitting layer. x According to a preferred embodiment of the present invention, the method for forming the contact opening and the recess is formed by first forming a photoresist layer on the protective layer, and then using the mask as a mask to perform the photoresist layer. In the lithography process, a portion of the protective layer is formed by a portion of the recess that is intended to form the recess. Wherein, the reticle has a light-shielding region, a light-transmitting region and a half-light-transmitting region, and the light-transmitting region corresponds to a predetermined opening of the contact window. Then, remove the gray blocker. 8
I28354v^4twf.d〇c/g 依照本發明的較佳實施例所述，上述這些凹 形成處的部分保護層以及半透光區所對 如是藉由同-_製程來移除。 4阻層例 依照本發_較佳實關賴，半透光區所對應 7刀光阻層例如是藉由灰化的方式移除。 ^ ° 依照本發明的較佳實施例所述，移除上述部分 而形成這些凹槽的枝包括献制或乾式㈣。θ 、本發明是在習知形成開口的微影製程中，使用具 透光區的光罩來進行曝光，續於同時形成具有底切輪廓 的凹f與開D。如此-來，後續在具有開口之第—膜層上 f成第二膜層時，此第三膜層會在凹槽處自動分離，:在 第一膜層上形成多個圖案。換言之，本發明與習知相較之 下，可以節省一道圖案化第二膜層的光罩，進而節 成本與時間。 、 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳细說 明如下。 '' 口 【實施方式】 本發明是以同一道光罩在第一膜層中形成具有底切 (under-cut)輪廓的凹槽及原結構所需之開口，以便於後續 在=第一膜層上形成第二膜層時，第二膜層可在凹槽處自 動分離，因而在第一膜層上形成多個圖案。換言之，本發 明無須對第二膜層進行微影及餘刻製程，即可完成第二膜 層的圖案化製程，因此可以節省許多製程成本與時間。以 9 ；4twf.doc/g 下實施例將以薄膜電晶體陣列基板及主動式有機電激發光 顯示态之製造流程為例做說明，但其並非用以限定本發 明。沾習此技藝者應该知道，本發明適用於圖案化任何膜 層。 圖2A至圖2C繪示為本發明之一較佳實施例中薄膜電 晶體陣列基板之製造流程的剖面示意圖。請參照圖2a，首 先提供一基板200，且基板200上已區分有多個畫素區域 202。接著在基板200上形成多個薄膜電晶體2丨〇 ,然後再 形成保護層204覆蓋這些薄膜電晶體21〇。其中，每一薄 膜電晶體210包括一源極金屬層212與一汲極金屬層2M。 熟習此技藝者應該知道，在形成薄膜電晶體21〇之閘 極216的製程中，亦會同時在基板2〇〇上形成與這些閘極 216電性連接的多條掃目苗線(scan une)(未繪示）。另一方 面，在形成源極金屬層212與沒極金屬層214的製程中， 則會同日守在基板200上形成與汲極金屬層214電性連接的 多條資料線(data line)(未繪示）。而且，晝素區域2〇2即 是藉由這些掃瞄線與資料線而相隔。 请參照圖2B’在保護層204中形成多個凹槽206與接 觸窗開口 208。其中，這些凹槽206具有底切(unde卜cm) 輪廓，且其例如是對應於上述掃瞄線與資料線的上方，而 接觸窗開口 208則是暴露出薄膜電晶體210的汲極金屬層 214。 9 凹槽206與接觸窗開口 208的形成方法例如是圖3A 至圖3E所繪示之流程。請參照圖3A，首先在保護層2〇4 12835· twf.doc/g 上形成光阻層220,然後如圖3B所示，以光 對光阻層220進行曝光製程。其中，光罩 说、半透光區234與透光區236。先罩23G具有遮光區 在此，本實施例之光阻層22()例如是正型光阻 j照圖3B ’需要注意的是，由於光阻層220對應半透光 區234的部分與對應透光區236的部分 光製程中所受到的光線照射強度較 /、在+ =後，如圖-示，光=對應= = 移除，而對應半透光區-的= 仍曰殘4在保4層204上，並不會被完全移除。 的部分保護層204,進㈣成且層23G所暴露出 中，凹梓20“IP 成有輪廓的凹槽施。其 值得一^的3 由乾式或濕式#刻的方式而形成。 的部分絲層22G。當然，在其他實施 : = = =製程來移除此部分的光阻層 的方式來Ϊ除 的光阻層220例如是以灰化㈣㈣ 請參照圖3Ε ’在移除圖3Β中對應半透光區234的部 i tit挪之後’即可再次以光阻層220為罩幕對保護 & /、行钮刻製以移除暴露出的部分保護層204， 八！1!2夕個接觸囪開口 208，而這些接觸窗開口 208是 暴露出各個薄膜電晶體210的没極金屬層2 w之後， 1283 54i^4twf.d〇c/g 移除光阻層220，即可完成圖2B所繪示之結構。 請參照圖2C，在保護層204上形成一透明導電層。其 中三透明導電層是填入保護層204中的接觸窗開口 2〇8而 與薄膜電晶體210的汲極金屬層214電性連接。牿別的县， 透明導電層會在凹槽206處自動分離，因而在每一畫素區 域2〇2内形成一畫素電極250。 一 值件注意的疋，雖然在圖式中，兩相鄰之畫素區域202 間僅繪示有一凹槽206,但實際上本發明並未限定兩相鄰 之畫素區域202間的凹槽206之數量。在其他實施例中， 也可以是如圖4所示，兩相鄰之晝素區域2〇2間具有多個 凹槽206。另外，雖然本實施例是在保護層2〇4中形成凹 槽206來自動圖案化晝素電極250，但在其他實施例中， 本發明也可以用以圖案化源極金屬層212與汲極金屬層 =4或是閘極216,熟習此技藝者可自行依據實際狀況來決 定欲將本發明應用於哪一膜層的製程中。 在形成晝素電極250之後，大致上已完成薄膜電晶體 陣列基板的製作，而後續其他製程則與一般薄膜電晶體陣 列基板相同，此處不再贅述。 本發明可以應用在液晶顯示器或有機電激發光顯示器 中。以液晶顯示器來說，其在分別形成彩色濾光片（c〇1〇r fllter)(未繪示）與上述薄膜電晶體陣列基板之後，接著即 是組立兩基板以及在兩基板之間形成液晶層。而在有機電 激發光顯示器的製程中，以上述實施例所述之製程完成圖 2C之結構之後，如圖5A所示，接著即是在基板上形 12 128354^4twf.doc/g 成畫素隔離層260。其中，纟素隔離層篇是在每一畫素 區域202内暴露出部分的晝素電極25〇。 然後’再如圖5B所示，在暴露出的晝素電極25〇上 形成有機發光@ 270，之後再於基才反2〇〇上全面性地形成 陰極層，此即大致完成有機電激發光顯示器的製作。 其中’於暴露出之畫素電極25〇上形成有機發光層27〇的 方法包括噴墨等。熟習此技藝者應該知道其詳細製程步 练上所述，本發明是在習知接觸窗開口的微影製程 中，使用具有半透絲的光罩來進行曝光，讀於同時形 膜層上形成第二膜層時，此第二膜 口内，而得以與對應之導電層電性 重力分_，進而在第一膜層上形成多 成具有底切輪廓的凹槽與接觸窗籣口。如此一來，後 具有接觸窗開口之筮—HL K上、# _ _。^ 層不但會填入接觸窗開口内， 連接，更會在凹槽處自動分離 • _然本發明已以較佳實施例揭露如卜，•”I28354v^4twf.d〇c/g According to a preferred embodiment of the present invention, the partial protective layer and the semi-transmissive region of the recesses are removed by the same process. 4 Resistive layer example According to the present invention, the 7-knife photoresist layer corresponding to the semi-transmissive region is removed by, for example, ashing. ^ ° In accordance with a preferred embodiment of the present invention, the branches that form the grooves to form the grooves include either a provision or a dry (four). θ. In the present invention, in a conventional lithography process for forming an opening, a photomask having a light transmitting region is used for exposure, and a concave f and an opening D having an undercut contour are simultaneously formed. In this way, when the second film layer is subsequently formed on the first film layer having the opening, the third film layer is automatically separated at the groove: a plurality of patterns are formed on the first film layer. In other words, the present invention can save a mask for patterning the second film layer in comparison with the conventional one, thereby saving cost and time. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the appended claims. The present invention is to form a groove having an undercut profile and an opening required for the original structure in the first film layer by the same reticle, so as to be subsequently in the first film layer. When the second film layer is formed thereon, the second film layer can be automatically separated at the groove, thereby forming a plurality of patterns on the first film layer. In other words, the present invention can complete the patterning process of the second film layer without performing lithography and engraving processes on the second film layer, thereby saving a lot of process cost and time. The manufacturing process of the thin film transistor array substrate and the active organic electroluminescence display state will be described by way of example in the following example; however, it is not intended to limit the present invention. It will be appreciated by those skilled in the art that the present invention is suitable for patterning any film layer. 2A to 2C are schematic cross-sectional views showing a manufacturing process of a thin film transistor array substrate in accordance with a preferred embodiment of the present invention. Referring to FIG. 2a, a substrate 200 is first provided, and a plurality of pixel regions 202 are distinguished on the substrate 200. A plurality of thin film transistors 2 are then formed on the substrate 200, and then a protective layer 204 is formed to cover the thin film transistors 21A. Each of the thin film transistors 210 includes a source metal layer 212 and a gate metal layer 2M. Those skilled in the art will appreciate that in the process of forming the gate 216 of the thin film transistor 21, a plurality of sweeping lines (scan une) electrically connected to the gates 216 are simultaneously formed on the substrate 2A. ) (not shown). On the other hand, in the process of forming the source metal layer 212 and the electrodeless metal layer 214, a plurality of data lines electrically connected to the gate metal layer 214 are formed on the substrate 200 on the same day (not Painted). Moreover, the pixel region 2〇2 is separated from the data line by these scanning lines. Referring to Figure 2B', a plurality of recesses 206 and contact window openings 208 are formed in the protective layer 204. Wherein, the recesses 206 have an undercut (cm) contour, and for example, corresponding to the upper of the scan line and the data line, and the contact window opening 208 is a drain metal layer exposing the thin film transistor 210. 214. 9 The method of forming the groove 206 and the contact opening 208 is, for example, the flow shown in FIGS. 3A to 3E. Referring to Fig. 3A, a photoresist layer 220 is first formed on the protective layer 2〇4 12835· twf.doc/g, and then the photoresist layer 220 is exposed to light as shown in Fig. 3B. Wherein, the photomask says the semi-transmissive region 234 and the light transmissive region 236. The reticle 23G has a light-shielding region. The photoresist layer 22 of the present embodiment is, for example, a positive-type photoresist. Referring to FIG. 3B, it should be noted that the portion of the photoresist layer 220 corresponding to the semi-transmissive region 234 is correspondingly transparent. The intensity of the light received by part of the optical process of the optical zone 236 is /, after + =, as shown in the figure - light = corresponding = = removed, and the corresponding semi-transparent zone - is still 曰 4 On layer 4 204, it will not be completely removed. A portion of the protective layer 204, which is formed into a layer (4) and exposed by the layer 23G, is formed into a contoured groove. The portion of the groove 20 is formed by a dry or wet pattern. Silk layer 22G. Of course, in other implementations: = = = process to remove the photoresist layer of this part to remove the photoresist layer 220, for example, to ash (four) (four) Please refer to Figure 3 Ε 'In the removal of Figure 3Β After the portion i of the semi-transmissive region 234 is moved, the photoresist layer 220 can be used as a mask to protect the & /, button to remove the exposed portion of the protective layer 204, 八!1!2 The contact opening 208 is contacted, and after the contact opening 208 is exposed to the non-polar metal layer 2 w of each of the thin film transistors 210, the photoresist layer 220 is removed by 1283 54i^4twf.d〇c/g. 2B, a transparent conductive layer is formed on the protective layer 204. The three transparent conductive layers are filled with the contact opening 2〇8 of the protective layer 204 and the thin film transistor 210. The gate metal layer 214 is electrically connected. In the other counties, the transparent conductive layer is automatically separated at the groove 206, and thus in each pixel A pixel electrode 250 is formed in the area 2〇2. Note that in the figure, only one groove 206 is shown between the two adjacent pixel regions 202, but the invention is not limited in practice. The number of the grooves 206 between the two adjacent pixel regions 202. In other embodiments, as shown in Fig. 4, there are a plurality of grooves 206 between the two adjacent pixel regions 2〇2. Although the present embodiment forms the recess 206 in the protective layer 2〇4 to automatically pattern the halogen electrode 250, in other embodiments, the present invention can also be used to pattern the source metal layer 212 and the drain metal. Layer = 4 or gate 216, those skilled in the art can decide which process layer to apply the invention to according to the actual situation. After forming the halogen electrode 250, the thin film transistor array is substantially completed. The substrate is fabricated, and the subsequent processes are the same as those of the general thin film transistor array substrate, and will not be described herein. The present invention can be applied to a liquid crystal display or an organic electroluminescent display. In the case of a liquid crystal display, the color is separately formed. Filter (c〇1〇r After flelter) (not shown) and the above-mentioned thin film transistor array substrate, then two substrates are assembled and a liquid crystal layer is formed between the two substrates. In the process of the organic electroluminescent display, as described in the above embodiments After the process completes the structure of FIG. 2C, as shown in FIG. 5A, a 12128354^4 twf.doc/g pixel-forming spacer layer 260 is formed on the substrate, wherein the pixel isolation layer is in each pixel region. A portion of the halogen electrode 25 is exposed in 202. Then, as shown in Fig. 5B, an organic light emission @270 is formed on the exposed halogen electrode 25, and then comprehensively on the base. The cathode layer is formed, which is to substantially complete the fabrication of the organic electroluminescent display. The method of forming the organic light-emitting layer 27 on the exposed pixel electrode 25A includes inkjet or the like. Those skilled in the art should be aware of the detailed process steps described above. In the lithography process of the conventional contact window opening, the present invention uses a photomask having a semi-transparent wire for exposure, and is formed on the simultaneous film layer. In the second film layer, the second film opening is separated from the corresponding conductive layer by electrical gravity, thereby forming a plurality of grooves and contact window openings having an undercut profile on the first film layer. In this way, there is a contact window opening 筮 HL K, # _ _. ^ The layer will not only fill in the contact window opening, but also connect automatically, and will automatically separate at the groove. - The present invention has been disclosed in the preferred embodiment,
圖2A至圖2(：：繪 示為本發明之一較佳實施例中薄膜電 圖料之，本發知相較之下，可以節省一道 • >、 、—^層的光罩，以節省製程成本與時間。 13 1283 54i74twf-d〇c/g 晶體陣列基板之製造流程的剖面示意圖。 圖3A至圖3E繪示為圖2B之凹槽與接觸窗開口之製 造流程的剖面示意圖。 圖4繪示為本發明之一較佳實施例中薄膜電晶體陣列 基板的局部俯視示意圖。 圖5A至圖5B繪示為本發明之一較佳實施例中有機電 激發光顯示器之部分製造流程的剖面示意圖。 【主要元件符號說明】 100、200 :基板 102、204 :保護層 104、208 :接觸窗開口 106 :透明導電層 108、220 :光阻層 110、210 :薄膜電晶體 112、214 :汲極金屬層 120、230 :光罩 130、250 :畫素電極 202 ··畫素區域 206 :凹槽 212 :源極金屬層 216 :閘極 232 :遮光區 234 ·半透光區 236 ·透光區 14 1283 54i?4twfd〇c/g 260 :畫素隔離層 270 :有機發光層 280 :陰極層2A to 2(:: illustrates a thin film electrographic material according to a preferred embodiment of the present invention, which can save a mask of >, Saving process cost and time. 13 1283 54i74twf-d〇c/g Schematic diagram of the manufacturing process of the crystal array substrate. Fig. 3A to Fig. 3E are schematic cross-sectional views showing the manufacturing process of the groove and the contact window opening of Fig. 2B. 4 is a partial top plan view of a thin film transistor array substrate according to a preferred embodiment of the present invention. FIGS. 5A-5B illustrate a partial manufacturing process of an organic electroluminescent display according to a preferred embodiment of the present invention. Schematic diagram of the main components: 100, 200: substrate 102, 204: protective layer 104, 208: contact window opening 106: transparent conductive layer 108, 220: photoresist layer 110, 210: thin film transistor 112, 214: Bipolar metal layer 120, 230: reticle 130, 250: pixel electrode 202 · pixel region 206: groove 212: source metal layer 216: gate 232: opaque region 234 · semi-transmissive region 236 Light zone 14 1283 54i? 4twfd〇c/g 260: pixel isolation layer 270: Yes The light emitting layer 280: a cathode layer