TWI300868B - - Google Patents
Download PDFInfo
- Publication number
- TWI300868B TWI300868B TW93109978A TW93109978A TWI300868B TW I300868 B TWI300868 B TW I300868B TW 93109978 A TW93109978 A TW 93109978A TW 93109978 A TW93109978 A TW 93109978A TW I300868 B TWI300868 B TW I300868B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- electrode
- gate
- insulating layer
- signal line
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 1010
- 239000010408 film Substances 0.000 claims description 177
- 239000000758 substrate Substances 0.000 claims description 168
- 239000011347 resin Substances 0.000 claims description 159
- 229920005989 resin Polymers 0.000 claims description 159
- 239000004973 liquid crystal related substance Substances 0.000 claims description 157
- 229910052732 germanium Inorganic materials 0.000 claims description 144
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 144
- 229910052751 metal Inorganic materials 0.000 claims description 132
- 239000002184 metal Substances 0.000 claims description 132
- 230000001681 protective effect Effects 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 114
- 239000004065 semiconductor Substances 0.000 claims description 104
- 239000012535 impurity Substances 0.000 claims description 81
- 230000008569 process Effects 0.000 claims description 67
- 238000004519 manufacturing process Methods 0.000 claims description 66
- 230000015572 biosynthetic process Effects 0.000 claims description 56
- 239000011241 protective layer Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 32
- 239000011159 matrix material Substances 0.000 claims description 18
- 238000010030 laminating Methods 0.000 claims description 16
- 238000007743 anodising Methods 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 7
- 239000004576 sand Substances 0.000 claims description 7
- 210000003298 dental enamel Anatomy 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims 2
- 239000005300 metallic glass Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 description 48
- 238000002161 passivation Methods 0.000 description 41
- 238000005530 etching Methods 0.000 description 35
- 229910004205 SiNX Inorganic materials 0.000 description 27
- 238000003860 storage Methods 0.000 description 27
- 239000010409 thin film Substances 0.000 description 27
- 238000007687 exposure technique Methods 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 24
- 229910052782 aluminium Inorganic materials 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 239000010936 titanium Substances 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 18
- 229910052715 tantalum Inorganic materials 0.000 description 13
- 238000004380 ashing Methods 0.000 description 12
- 230000003068 static effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 230000005611 electricity Effects 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 210000002858 crystal cell Anatomy 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 238000009832 plasma treatment Methods 0.000 description 10
- 238000002048 anodisation reaction Methods 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000005459 micromachining Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 150000003304 ruthenium compounds Chemical class 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000013039 cover film Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 229910000043 hydrogen iodide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000007965 phenolic acids Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NRZHJVXFHRINCD-UHFFFAOYSA-K triphenoxybismuthane Chemical compound [Bi+3].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 NRZHJVXFHRINCD-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003109730A JP2004317685A (ja) | 2003-04-15 | 2003-04-15 | 液晶表示装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200500762A TW200500762A (en) | 2005-01-01 |
| TWI300868B true TWI300868B (enrdf_load_stackoverflow) | 2008-09-11 |
Family
ID=33470775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093109978A TW200500762A (en) | 2003-04-15 | 2004-04-09 | Liquid crystal display device and its manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004317685A (enrdf_load_stackoverflow) |
| TW (1) | TW200500762A (enrdf_load_stackoverflow) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405194C (zh) * | 2004-11-29 | 2008-07-23 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| CN100543569C (zh) * | 2004-11-29 | 2009-09-23 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| CN100416389C (zh) * | 2004-11-29 | 2008-09-03 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| CN100357817C (zh) * | 2004-11-29 | 2007-12-26 | 广辉电子股份有限公司 | 液晶显示装置及其制造方法 |
| JP2006267877A (ja) * | 2005-03-25 | 2006-10-05 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
| US7982215B2 (en) | 2005-10-05 | 2011-07-19 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for manufacturing TFT substrate |
| CN101336485B (zh) | 2005-12-02 | 2012-09-26 | 出光兴产株式会社 | Tft基板及tft基板的制造方法 |
| CN102244103A (zh) | 2006-01-31 | 2011-11-16 | 出光兴产株式会社 | Tft基板 |
| JP2007212699A (ja) | 2006-02-09 | 2007-08-23 | Idemitsu Kosan Co Ltd | 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法 |
| WO2008136505A1 (ja) | 2007-05-08 | 2008-11-13 | Idemitsu Kosan Co., Ltd. | 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法 |
| JP5306784B2 (ja) | 2008-11-18 | 2013-10-02 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN101957530B (zh) | 2009-07-17 | 2013-07-24 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
| JP5575451B2 (ja) * | 2009-10-08 | 2014-08-20 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
| JP5662114B2 (ja) | 2010-11-17 | 2015-01-28 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2003
- 2003-04-15 JP JP2003109730A patent/JP2004317685A/ja active Pending
-
2004
- 2004-04-09 TW TW093109978A patent/TW200500762A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200500762A (en) | 2005-01-01 |
| JP2004317685A (ja) | 2004-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI258219B (en) | Liquid crystal display | |
| US7894009B2 (en) | Liquid crystal display device and a manufacturing method of the same | |
| TWI287161B (en) | Liquid crystal display device and manufacturing method thereof | |
| TWI300868B (enrdf_load_stackoverflow) | ||
| JP4646539B2 (ja) | 液晶表示装置とその製造方法 | |
| KR20020003224A (ko) | 액정표시장치용의 절연게이트형 트랜지스터와 그 제조방법 | |
| TWI281999B (en) | LCD device and manufacturing method thereof | |
| JP2005283690A (ja) | 液晶表示装置とその製造方法 | |
| TWI305288B (enrdf_load_stackoverflow) | ||
| TWI247158B (en) | Liquid crystal display device and its manufacturing method | |
| TWI300873B (enrdf_load_stackoverflow) | ||
| JP2005017669A (ja) | 液晶表示装置とその製造方法 | |
| CN100545726C (zh) | 液晶显示装置及其制造方法 | |
| CN100543569C (zh) | 液晶显示装置及其制造方法 | |
| JP3391304B2 (ja) | 液晶画像表示装置と画像表示装置用半導体装置の製造方法 | |
| CN100416389C (zh) | 液晶显示装置及其制造方法 | |
| JP3995903B2 (ja) | 液晶画像表示装置 | |
| JP4538218B2 (ja) | 液晶表示装置とその製造方法 | |
| JP5342731B2 (ja) | 液晶表示装置とその製造方法 | |
| JP4538219B2 (ja) | 液晶表示装置とその製造方法 | |
| CN100501549C (zh) | 液晶显示装置及其制造方法 | |
| JP2005215276A (ja) | 液晶表示装置とその製造方法 | |
| JP2002184992A (ja) | 液晶画像表示装置と画像表示装置用半導体装置の製造方法 | |
| CN100357817C (zh) | 液晶显示装置及其制造方法 | |
| CN100405194C (zh) | 液晶显示装置及其制造方法 |