TWI293481B - Method and processing system for controlling a chamber cleaning process - Google Patents

Method and processing system for controlling a chamber cleaning process Download PDF

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Publication number
TWI293481B
TWI293481B TW094118174A TW94118174A TWI293481B TW I293481 B TWI293481 B TW I293481B TW 094118174 A TW094118174 A TW 094118174A TW 94118174 A TW94118174 A TW 94118174A TW I293481 B TWI293481 B TW I293481B
Authority
TW
Taiwan
Prior art keywords
chamber
cleaning process
processing
control method
temperature
Prior art date
Application number
TW094118174A
Other languages
English (en)
Chinese (zh)
Other versions
TW200605210A (en
Inventor
Emmanuel P Guidotti
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200605210A publication Critical patent/TW200605210A/zh
Application granted granted Critical
Publication of TWI293481B publication Critical patent/TWI293481B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW094118174A 2004-06-17 2005-06-02 Method and processing system for controlling a chamber cleaning process TWI293481B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/710,086 US20050279384A1 (en) 2004-06-17 2004-06-17 Method and processing system for controlling a chamber cleaning process

Publications (2)

Publication Number Publication Date
TW200605210A TW200605210A (en) 2006-02-01
TWI293481B true TWI293481B (en) 2008-02-11

Family

ID=34969049

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118174A TWI293481B (en) 2004-06-17 2005-06-02 Method and processing system for controlling a chamber cleaning process

Country Status (6)

Country Link
US (1) US20050279384A1 (enExample)
JP (2) JP5107032B2 (enExample)
KR (2) KR101581094B1 (enExample)
CN (1) CN100582299C (enExample)
TW (1) TWI293481B (enExample)
WO (1) WO2006006991A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI713677B (zh) * 2016-01-21 2020-12-21 美商應用材料股份有限公司 高生產力浸泡退火系統

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US7806126B1 (en) * 2002-09-30 2010-10-05 Lam Research Corporation Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same
US20060154888A1 (en) * 2004-11-09 2006-07-13 Santaris Pharma A/S LNA oligonucleotides and the treatment of cancer
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
EP1866074A4 (en) * 2005-03-16 2017-01-04 Entegris Inc. System for delivery of reagents from solid sources thereof
JP4671355B2 (ja) 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体
EP2021528A4 (en) * 2006-04-26 2011-03-23 Advanced Tech Materials CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
US7879184B2 (en) 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8034181B2 (en) * 2007-02-28 2011-10-11 Hitachi High-Technologies Corporation Plasma processing apparatus
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US20090163033A1 (en) * 2007-12-21 2009-06-25 Guowen Ding Methods for extending chamber component life time
KR20130100339A (ko) * 2010-11-24 2013-09-10 가부시키가이샤 알박 막 형성 장치 및 막 형성 장치의 세정 방법
CN102691050B (zh) * 2012-06-11 2016-04-13 上海华虹宏力半导体制造有限公司 一种钨化学气相沉积系统的清洗方法
JP6055637B2 (ja) 2012-09-20 2016-12-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
JP6347543B2 (ja) * 2014-06-30 2018-06-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
US20160056032A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
JP6524944B2 (ja) * 2016-03-18 2019-06-05 信越半導体株式会社 気相エッチング方法及びエピタキシャル基板の製造方法
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US20210292894A1 (en) * 2016-08-19 2021-09-23 Applied Materials, Inc. Temperature sensor for end point detection during plasma enhanced chemical vapor deposition chamber clean
JP7094131B2 (ja) * 2018-04-03 2022-07-01 東京エレクトロン株式会社 クリーニング方法
WO2020185360A1 (en) * 2019-03-08 2020-09-17 Applied Materials, Inc. Porous showerhead for a processing chamber
JP7267843B2 (ja) * 2019-06-07 2023-05-02 株式会社アルバック プラズマ処理装置
CN113994457B (zh) * 2019-09-20 2025-04-08 株式会社国际电气 半导体器件的制造方法、衬底处理方法、衬底处理装置及记录介质
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
US20230023764A1 (en) * 2019-12-17 2023-01-26 Applied Materials, Inc. Surface profiling and texturing of chamber components
DE102020107518A1 (de) * 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
JP7515420B2 (ja) * 2021-01-12 2024-07-12 東京エレクトロン株式会社 クリーニング方法及び処理装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI713677B (zh) * 2016-01-21 2020-12-21 美商應用材料股份有限公司 高生產力浸泡退火系統

Also Published As

Publication number Publication date
CN100582299C (zh) 2010-01-20
JP2012064970A (ja) 2012-03-29
WO2006006991A1 (en) 2006-01-19
JP2008503089A (ja) 2008-01-31
JP5107032B2 (ja) 2012-12-26
KR20130093689A (ko) 2013-08-22
TW200605210A (en) 2006-02-01
US20050279384A1 (en) 2005-12-22
KR20070026418A (ko) 2007-03-08
CN1942603A (zh) 2007-04-04
KR101581094B1 (ko) 2015-12-30

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