JP5107032B2 - チャンバクリーニング処理を制御するための方法 - Google Patents

チャンバクリーニング処理を制御するための方法 Download PDF

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Publication number
JP5107032B2
JP5107032B2 JP2007516472A JP2007516472A JP5107032B2 JP 5107032 B2 JP5107032 B2 JP 5107032B2 JP 2007516472 A JP2007516472 A JP 2007516472A JP 2007516472 A JP2007516472 A JP 2007516472A JP 5107032 B2 JP5107032 B2 JP 5107032B2
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JP
Japan
Prior art keywords
system component
temperature
cleaning process
substrate holder
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2007516472A
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English (en)
Japanese (ja)
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JP2008503089A (ja
JP2008503089A5 (enExample
Inventor
エマニュエル・ギドティ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of JP2008503089A publication Critical patent/JP2008503089A/ja
Publication of JP2008503089A5 publication Critical patent/JP2008503089A5/ja
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2007516472A 2004-06-17 2005-04-14 チャンバクリーニング処理を制御するための方法 Expired - Fee Related JP5107032B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/710,086 2004-06-17
US10/710,086 US20050279384A1 (en) 2004-06-17 2004-06-17 Method and processing system for controlling a chamber cleaning process
PCT/US2005/012804 WO2006006991A1 (en) 2004-06-17 2005-04-14 Method and processing system for controlling a chamber cleaning process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011264748A Division JP2012064970A (ja) 2004-06-17 2011-12-02 チャンバクリーニング処理を制御するための方法及び処理システム

Publications (3)

Publication Number Publication Date
JP2008503089A JP2008503089A (ja) 2008-01-31
JP2008503089A5 JP2008503089A5 (enExample) 2008-05-29
JP5107032B2 true JP5107032B2 (ja) 2012-12-26

Family

ID=34969049

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007516472A Expired - Fee Related JP5107032B2 (ja) 2004-06-17 2005-04-14 チャンバクリーニング処理を制御するための方法
JP2011264748A Pending JP2012064970A (ja) 2004-06-17 2011-12-02 チャンバクリーニング処理を制御するための方法及び処理システム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011264748A Pending JP2012064970A (ja) 2004-06-17 2011-12-02 チャンバクリーニング処理を制御するための方法及び処理システム

Country Status (6)

Country Link
US (1) US20050279384A1 (enExample)
JP (2) JP5107032B2 (enExample)
KR (2) KR101581094B1 (enExample)
CN (1) CN100582299C (enExample)
TW (1) TWI293481B (enExample)
WO (1) WO2006006991A1 (enExample)

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JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US7806126B1 (en) * 2002-09-30 2010-10-05 Lam Research Corporation Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same
US20060154888A1 (en) * 2004-11-09 2006-07-13 Santaris Pharma A/S LNA oligonucleotides and the treatment of cancer
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
EP1866074A4 (en) * 2005-03-16 2017-01-04 Entegris Inc. System for delivery of reagents from solid sources thereof
JP4671355B2 (ja) 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体
EP2021528A4 (en) * 2006-04-26 2011-03-23 Advanced Tech Materials CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
US7879184B2 (en) 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8034181B2 (en) * 2007-02-28 2011-10-11 Hitachi High-Technologies Corporation Plasma processing apparatus
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US20090163033A1 (en) * 2007-12-21 2009-06-25 Guowen Ding Methods for extending chamber component life time
KR20130100339A (ko) * 2010-11-24 2013-09-10 가부시키가이샤 알박 막 형성 장치 및 막 형성 장치의 세정 방법
CN102691050B (zh) * 2012-06-11 2016-04-13 上海华虹宏力半导体制造有限公司 一种钨化学气相沉积系统的清洗方法
JP6055637B2 (ja) 2012-09-20 2016-12-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
JP6347543B2 (ja) * 2014-06-30 2018-06-27 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
US20160056032A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling
US10325789B2 (en) * 2016-01-21 2019-06-18 Applied Materials, Inc. High productivity soak anneal system
JP6524944B2 (ja) * 2016-03-18 2019-06-05 信越半導体株式会社 気相エッチング方法及びエピタキシャル基板の製造方法
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US20210292894A1 (en) * 2016-08-19 2021-09-23 Applied Materials, Inc. Temperature sensor for end point detection during plasma enhanced chemical vapor deposition chamber clean
JP7094131B2 (ja) * 2018-04-03 2022-07-01 東京エレクトロン株式会社 クリーニング方法
WO2020185360A1 (en) * 2019-03-08 2020-09-17 Applied Materials, Inc. Porous showerhead for a processing chamber
JP7267843B2 (ja) * 2019-06-07 2023-05-02 株式会社アルバック プラズマ処理装置
CN113994457B (zh) * 2019-09-20 2025-04-08 株式会社国际电气 半导体器件的制造方法、衬底处理方法、衬底处理装置及记录介质
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
US20230023764A1 (en) * 2019-12-17 2023-01-26 Applied Materials, Inc. Surface profiling and texturing of chamber components
DE102020107518A1 (de) * 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
JP7515420B2 (ja) * 2021-01-12 2024-07-12 東京エレクトロン株式会社 クリーニング方法及び処理装置

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Also Published As

Publication number Publication date
CN100582299C (zh) 2010-01-20
JP2012064970A (ja) 2012-03-29
WO2006006991A1 (en) 2006-01-19
JP2008503089A (ja) 2008-01-31
KR20130093689A (ko) 2013-08-22
TWI293481B (en) 2008-02-11
TW200605210A (en) 2006-02-01
US20050279384A1 (en) 2005-12-22
KR20070026418A (ko) 2007-03-08
CN1942603A (zh) 2007-04-04
KR101581094B1 (ko) 2015-12-30

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