TWI281713B - Wafer edge etching apparatus and method - Google Patents

Wafer edge etching apparatus and method Download PDF

Info

Publication number
TWI281713B
TWI281713B TW093115127A TW93115127A TWI281713B TW I281713 B TWI281713 B TW I281713B TW 093115127 A TW093115127 A TW 093115127A TW 93115127 A TW93115127 A TW 93115127A TW I281713 B TWI281713 B TW I281713B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
edge
electrode
wafer
insulating plate
Prior art date
Application number
TW093115127A
Other languages
English (en)
Chinese (zh)
Other versions
TW200501256A (en
Inventor
Chang-Won Choi
Tae-Ryong Kim
Jong-Baum Kim
Jung-Woo Seo
Chang-Ju Byun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030033844A external-priority patent/KR100585089B1/ko
Priority claimed from KR1020030070634A external-priority patent/KR100604826B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200501256A publication Critical patent/TW200501256A/zh
Application granted granted Critical
Publication of TWI281713B publication Critical patent/TWI281713B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
TW093115127A 2003-05-27 2004-05-27 Wafer edge etching apparatus and method TWI281713B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020030033844A KR100585089B1 (ko) 2003-05-27 2003-05-27 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
KR1020030070634A KR100604826B1 (ko) 2003-10-10 2003-10-10 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치 및그 플라즈마 처리방법
US10/762,526 US20040238488A1 (en) 2003-05-27 2004-01-23 Wafer edge etching apparatus and method

Publications (2)

Publication Number Publication Date
TW200501256A TW200501256A (en) 2005-01-01
TWI281713B true TWI281713B (en) 2007-05-21

Family

ID=34108610

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115127A TWI281713B (en) 2003-05-27 2004-05-27 Wafer edge etching apparatus and method

Country Status (4)

Country Link
JP (1) JP2005005701A (https=)
CN (1) CN1595618A (https=)
DE (1) DE102004024893A1 (https=)
TW (1) TWI281713B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570763B (zh) * 2013-05-17 2017-02-11 佳能安內華股份有限公司 蝕刻裝置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
US20070068623A1 (en) * 2005-09-27 2007-03-29 Yunsang Kim Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
US7909960B2 (en) 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device
WO2009124060A1 (en) 2008-03-31 2009-10-08 Memc Electronic Materials, Inc. Methods for etching the edge of a silicon wafer
EP2359390A1 (en) 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
CN101930480B (zh) * 2009-06-19 2012-03-07 中芯国际集成电路制造(上海)有限公司 优化cmos图像传感器版图的方法
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
CN103715049B (zh) * 2012-09-29 2016-05-04 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法
KR102116474B1 (ko) 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP2022143889A (ja) 2021-03-18 2022-10-03 キオクシア株式会社 半導体製造装置及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570763B (zh) * 2013-05-17 2017-02-11 佳能安內華股份有限公司 蝕刻裝置
US11195700B2 (en) 2013-05-17 2021-12-07 Canon Anelva Corporation Etching apparatus

Also Published As

Publication number Publication date
DE102004024893A1 (de) 2005-04-14
JP2005005701A (ja) 2005-01-06
TW200501256A (en) 2005-01-01
CN1595618A (zh) 2005-03-16

Similar Documents

Publication Publication Date Title
TWI281713B (en) Wafer edge etching apparatus and method
US11658043B2 (en) Selective anisotropic metal etch
US6962879B2 (en) Method of plasma etching silicon nitride
CN100405551C (zh) 在双掺杂栅应用中改进轮廓控制和提高n/p负载的方法
US20040238488A1 (en) Wafer edge etching apparatus and method
JP2019533910A (ja) 高アスペクト比の構造体のための除去方法
KR102304163B1 (ko) 에칭 방법
JP2022116000A (ja) 空隙を形成するためのシステム及び方法
US6391148B2 (en) Cobalt silicide etch process and apparatus
KR20220022458A (ko) 산소 펄싱을 이용하여 구조들을 에칭하기 위한 방법들
JP2023535388A (ja) ホウ素がドープされたシリコン材料を利用した集積プロセス
TW201203354A (en) Methods for etching silicon-based antireflective layers
US20240096641A1 (en) In-situ carbon liner for high aspect ratio features
CN117678057A (zh) 金属氧化物定向移除
TW202437385A (zh) 改良經蝕刻之含矽鍺材料表面粗糙度之加工方法
JP7819184B2 (ja) 誘電性シーズニング膜を用いた静電チャックのシーズニングシステム及び方法
US20030109138A1 (en) Method of etching tantalum
TW202514790A (zh) 有提升的表面純度之含矽及鍺材料之選擇性蝕刻
JP2006080355A (ja) 半導体装置の製造方法
US11658042B2 (en) Methods for etching structures and smoothing sidewalls
JP3597721B2 (ja) エッチング方法および半導体装置の製造方法
TW202603847A (zh) 在高深寬比特徵中金屬蝕刻的啟動步驟
TW202449911A (zh) 改善經蝕刻的含矽及鍺材料表面粗糙度之處理
CN117597769A (zh) 过渡金属氮化物材料的选择性移除
TW556285B (en) Etching method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees