TWI281162B - Non-volatile memory-element - Google Patents

Non-volatile memory-element Download PDF

Info

Publication number
TWI281162B
TWI281162B TW094132792A TW94132792A TWI281162B TW I281162 B TWI281162 B TW I281162B TW 094132792 A TW094132792 A TW 094132792A TW 94132792 A TW94132792 A TW 94132792A TW I281162 B TWI281162 B TW I281162B
Authority
TW
Taiwan
Prior art keywords
terminal
transistor
data
mos
gate
Prior art date
Application number
TW094132792A
Other languages
English (en)
Chinese (zh)
Other versions
TW200614248A (enExample
Inventor
Gregor Schatzberger
Original Assignee
Austriamicrosystems Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems Ag filed Critical Austriamicrosystems Ag
Publication of TW200614248A publication Critical patent/TW200614248A/zh
Application granted granted Critical
Publication of TWI281162B publication Critical patent/TWI281162B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
TW094132792A 2004-09-27 2005-09-22 Non-volatile memory-element TWI281162B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004046793A DE102004046793B3 (de) 2004-09-27 2004-09-27 Nicht-flüchtiges Speicherelement

Publications (2)

Publication Number Publication Date
TW200614248A TW200614248A (enExample) 2006-05-01
TWI281162B true TWI281162B (en) 2007-05-11

Family

ID=35276175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094132792A TWI281162B (en) 2004-09-27 2005-09-22 Non-volatile memory-element

Country Status (6)

Country Link
US (1) US7602640B2 (enExample)
EP (1) EP1794758B1 (enExample)
JP (1) JP4673893B2 (enExample)
DE (2) DE102004046793B3 (enExample)
TW (1) TWI281162B (enExample)
WO (1) WO2006034782A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080019162A1 (en) * 2006-07-21 2008-01-24 Taku Ogura Non-volatile semiconductor storage device
US8189328B2 (en) * 2006-10-23 2012-05-29 Virident Systems, Inc. Methods and apparatus of dual inline memory modules for flash memory
DE102007030842B4 (de) 2007-07-03 2015-05-21 Austriamicrosystems Ag Speicheranordnung und Verfahren zum Speichern
US7916539B2 (en) * 2009-01-23 2011-03-29 Analog Devices, Inc. Differential, level-shifted EEPROM structures
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
US12218598B2 (en) * 2022-05-31 2025-02-04 Texas Instruments Incorporated Quasi-resonant isolated voltage converter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4132904A (en) * 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4348745A (en) * 1980-10-27 1982-09-07 Hughes Aircraft Company Non-volatile random access memory having non-inverted storage
JPH0562487A (ja) * 1991-09-06 1993-03-12 Toshiba Corp プログラマブル初期動作モード設定回路
JP3450896B2 (ja) * 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US5523971A (en) * 1995-03-16 1996-06-04 Xilinx, Inc. Non-volatile memory cell for programmable logic device
US5648930A (en) * 1996-06-28 1997-07-15 Symbios Logic Inc. Non-volatile memory which is programmable from a power source
US6097242A (en) * 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
US6411545B1 (en) * 1999-11-19 2002-06-25 John Millard And Pamela Ann Caywood 1989 Revokable Living Trust Non-volatile latch
WO2004112047A1 (en) * 2003-06-17 2004-12-23 Koninklijke Philips Electronics N.V. Non-volatile static memory cell

Also Published As

Publication number Publication date
DE102004046793B3 (de) 2006-05-11
TW200614248A (enExample) 2006-05-01
EP1794758A1 (de) 2007-06-13
DE502005005969D1 (de) 2008-12-24
JP4673893B2 (ja) 2011-04-20
WO2006034782A1 (de) 2006-04-06
US20080165583A1 (en) 2008-07-10
EP1794758B1 (de) 2008-11-12
US7602640B2 (en) 2009-10-13
JP2008515122A (ja) 2008-05-08

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