TWI275566B - A diamond substrate and the process method of the same - Google Patents

A diamond substrate and the process method of the same Download PDF

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TWI275566B
TWI275566B TW094113548A TW94113548A TWI275566B TW I275566 B TWI275566 B TW I275566B TW 094113548 A TW094113548 A TW 094113548A TW 94113548 A TW94113548 A TW 94113548A TW I275566 B TWI275566 B TW I275566B
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layer
substrate
diamond
stone
tantalum carbide
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TW200637793A (en
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Hsiao-Kuo Chang
Jen-Hsuan Huang
Chih-Peng Chen
Na-Ling Chen
Shih-Pang Wen
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Kinik Co
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Priority to US11/380,356 priority patent/US7510906B2/en
Priority to KR1020060037500A priority patent/KR20060113450A/ko
Priority to JP2006122110A priority patent/JP2006306719A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
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  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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  • Chemical Vapour Deposition (AREA)

Description

1275566 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種鑽石基板及其製作方法，特別是一 鑽石/碳化矽複合層結構之鑽石基板及其製作方法。久裡/、有 【先前技術】 具有+極佳特性，如：深紫外光到遠紅外線的 佳、隶咼表面聲波速、最高熱傳導率、最高物理硬度、 抗能力、良好化學惰性及優異絕緣性特性等，已被廣泛; 統的切削工具及研磨材料。近來，隨著化學氣相沉、積^¥]〇傳 Ch_cal Vapor Deposition )技術的發展，使得鑽的庫 JJ通訊產業、光電產業的散熱元件與光學元J以 ^JiH5I^R^^LightEmittingDi〇de;LED) 研九到現在已有二十多年之歷史，紅光綠光盥黃 3已逐漸研發成功。但技光發光二極體發極， ΐ材製程Λ善下，藍/白光發光二極體亮著改 i，並Jίϊί 石£曰圓(Sapphire Wafer)為蟲晶承載基 再於)缓（SingleciystalA1N)薄膜來作為緩衝層， ίίίΐίΐίίίί^ ^ ^ - 有許思㉟需^分二因此到目前-直 配板/巧:雖^鐵石與氮化鎵的晶格尺寸匹 伽歸與紐I触力（thermal 鑽石膜▲、非當〜陷所造成之内應力㈤咖以腦），造成 題點。、曰 谷易產生涊曲或破裂，這些都形成了難以突破的問 【發明内容】 係利題’本發明提供—種_基板及其製作方法， i體層的ιΐ曰，ί降低鑽石膜層的魅曲變形量，以及提高半 、θ 、、°日曰效果，稭以大體上解決先前技術所存在之問題。 6 1275566 層、石體目二2日月2露之鑽石基板是由鑽石膜 晶格不其巧與糊層之 可選自氮她=結f巧化石夕，而半導體層 ，、積體電路、有機二極體^=導=表面可以製作電子 表面聲波傳遞用基板或化學檢測^件。」▲—極體發光元件、 j，提供-基H?石含下列步驟:首 ㈣層不匹配性’而可直接於碳 巧體本sri鐵另：層鑽溫^^^^ γ防均謂層產生__，而半 化石夕層則可選自單晶結構、多晶結構或非社曰曰曰，石膜，石反 ί型ii2l膜層掺雜有第V族元素所形成之n ϊίίΐί ? 丨型ίί”p型半導體層之鑽石基板表面皆 學檢‘元件ί太ί ίΐϊίϊ先70件、無機二喻光元件、化 «： ίί 1275566 板’㈣她基板將其優 解，明ί?:特徵、及其功能有進-步的瞭 【實施方式】 範圍板的尺寸 ^所構成’且鑽石膜層12G形成於碳化石夕層130上， 以3=;層尸產生_變形，半導體層⑽ 結晶/品ΐ導體層之晶格不匹配性，而可提高半導體層刚的 卿ίΐ制?參考「第2α圖」至「第沈圖」，其為本發明第-的^衣拉方法流程示意圖，其步驟包含：首先，提供一美材 2Β円(i m然後，形成碳化石夕層130於基材1101方土(才第 2$圖），再形成鑽石膜層120於碳化矽層13〇 \弟
Jt；；t3f ；i1〇r 2D ®} ^ ： ® ^ κ ϋ130 I方（弟2Ε圖），即構成此鑽石基板100。 的外《】、中疑产實例^鑽石基板100亦可以利用雷射加工成適當 其二叉如，鑽石基板100可以為圓形、方形或多邊形等，且 構:Γ =選擇可為矽晶材料，鑽石膜層120可為單晶鑽石膜或 ^化f層3則可選自單晶結構、多晶結構或非、ί 化？7，至於半導體層140則可選自氮化铭（Α1Ν)、氮 氮化鎵銘/A1GaN)與氮化鎵（GaN)等氮化物。 乃於圖示’本發明之第二實施例之鑽石基板2〇〇， +導體層240表面設置有電子元件25G，且電子元 3 f 體電路、有機二極_光元件、無機二極體發光元 件、气面，波傳遞用基板或化學檢測元件。 匕嫁半導體層之鑽石基板為例，由於氮化鎵具有快速 移率以及不錯的導熱率等特性，可應用於藍、綠光的發 下一代的短波長雷射二極體及白光照明，還有高功率 及被波通訊兀件，而氮化鎵也具有壓電特性、高表面聲波波速 1275566 用去除步驟，製作成無基材之鑽石基板，以下僅以後者為 i」所示’本發明之第四實施例，此錢石基板= ί二碳化石夕層430與半導體層440所構成，且鑽 f g層產生通曲變形’而半導體層440則形成於鑽石膜層42〇 的f ii方^^程·圖·^「第7E圖」’為本發明第四實施例 7αΪ3 ίΐ 驟包含:首*，提供一基材41〇 (第 i开ϊ鑽ΐί厗石夕層430於基材410上方（第7Β圖〕， ί K ^圖)2上（第7D圖），最後，將基材410 ί 13 i k即構成此無基材之鑽石基板_。 上，如「第8 石廣泛J1用於各類的電子元件 乃於半導體層f施例之鑽石基板5〇〇， 係由鑽石膜層520經過推550 ’其中，半導體層540 體層，且電子元件55〇可為 ^之j半導體層或P型半導 機二㈣發光元件、化^機二極體發光元件、無 發明。在不脫離本發明之如上，然其並非用以限定本 屬本發明之專利保護範圍所為之更動與潤飾，均 所附之申請專利範圍。關於本發明所界定之保護範圍請參考 【圖式簡單說明】 苐1圖’係本發明之篆—^ ^ 第2A圖至第2E圖，例ί錢石基板之示意圖； 示意圖； 係本魯明之苐—實施例的製造方法流程 第3圖，係本發明之第一每 第4圖，係本發明之第二J，列之鑽石基板之示意圖； 第5Α圖至第5D圖，在$^例之鑽石基板之示意圖； 程示意圖； 係本每明之第三實施例的製造方法流 第6圖，係本發明之第 一第7Α圖至第7Ε圖，倍太^二彳之鑽石基板之示意圖； 示意圖；及 ’、务月之第四實施例的製造方法流程 10 1275566 第8圖，係本發明之第五實施例之鑽石基板之示意圖 【主要元件符號說明】 100 鑽石基板 110 基材 120 鑽石膜層 130 碳化矽層 140 半導體層 200 鑽石基板 240 半導體層 250 電子元件 300 鑽石基板 310 基材 320 鑽石膜層 330 碳化矽層 340 半導體層 400 鑽石基板 410 基材 420 鑽石膜層 430 碳化矽層 440 半導體層 500 鑽石基板 520 鑽石膜層 540 半導體層 550 電子元件 /λ) 11

Claims (1)

1275566 十、申請專利範圍： 1. 一種鑽石基板，包括有： 一碳化石夕層； 鑽减碳切層上’以減财層防止該 祕碳切層緩 其中該鑽石膜層係選 .自3所$之鑽石基板，其中該半導體層係選 鎵（GaN)之群組、【合删ΒΝ)、氮化鎵銘（A1GaN)與氮化 6.-種^作絲，料驟包含： 巧成一碳化矽層於該基材上； 石膜碳化石夕層上’以該碳化石夕層防止該鑽 去除該基材；及 7去工ΪΪ⑵藉由該碳酬缓和 6項所述之鑽石基板之製作方法，其中該基 =係選自 ^ 賴 12 1275566 與氮化鎵（GaN)之群組組合。 11· 一種鑽石基板，包括有·· 一碳化矽層； 鑽石膜ί產S曲15於》碳化矽層上’以該碳化矽層防止該 成於該碳化矽層之下方：之鑽石基板，更包括一基材，形 利細第12項所述，石基板，其中該基材係為秒 14·如申請專利範圍第u項所 晶鑽石該鐵石膜層係 自單晶結構、6多晶i1 構 1 戶基板，其中該碳化矽係選 係由該鑽石膜層摻雜有士 基板’其中該半導體層係 认如申請專利蠶= 有項弟所7义，成之/型半導體層。 尺寸範圍為2英吁〜8英忖述鑽基板’其中該鑽石基板之 19. -種，石基板之製作方法，其步驟包含： 從供一基材； 形成一碳化矽層於該基材上； 石膜層童生2:溫,2石反化石夕層上’以該石炭化石夕層防止該鑽 %如申‘於該鑽石膜層上。 19項所述之鑽石基板之製作方法，盆中兮 儿说述之更二一板去之除#方材#之步驟广 基材係為石夕晶H 鑽基板之製作方法，其中該 22m專利範圍第19項所述之鑽石基板之製作方法，盆㈣ 23 Ϊ申晶鑽石膜與多晶鑽石膜之群組組合。一 甲明專利乾圍幻9項所述之鑽石基板之製作方法，其中該 13 1275566
碳化矽係選自單晶結構、多晶結構與非結晶結構之群組組合之 碳化矽。 24. 如申請專利範圍第19項所述之鑽石基板之製作方法，其中該 形成該半導體層之步驟，係於該鑽石膜層上摻雜有第ΠΙ族元 素而形成該p型半導體層。 25. 如申請專利範圍第19項所述之鑽石基板之製作方法，其中該 形成該半導體層之步驟，係於該鑽石膜層上摻雜有第V族元 素而形成該η型半導體層。
14
TW094113548A 2005-04-27 2005-04-27 A diamond substrate and the process method of the same TWI275566B (en)

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TW094113548A TWI275566B (en) 2005-04-27 2005-04-27 A diamond substrate and the process method of the same
US11/380,356 US7510906B2 (en) 2005-04-27 2006-04-26 Diamond substrate and method for fabricating the same
KR1020060037500A KR20060113450A (ko) 2005-04-27 2006-04-26 다이아몬드 기판 및 이의 제조 방법
JP2006122110A JP2006306719A (ja) 2005-04-27 2006-04-26 ダイヤモンド基板とその製造方法

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US7799599B1 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Single crystal silicon carbide layers on diamond and associated methods
GB201509766D0 (en) * 2015-06-05 2015-07-22 Element Six Technologies Ltd Method of fabricating diamond-semiconductor composite substrates
US10128107B1 (en) * 2017-08-31 2018-11-13 Rfhic Corporation Wafers having III-Nitride and diamond layers
SG10201905013VA (en) 2018-06-11 2020-01-30 Skyworks Solutions Inc Acoustic wave device with spinel layer
CN110828293A (zh) * 2018-08-13 2020-02-21 西安电子科技大学 基于SiC/金刚石复合衬底层的半导体器件及其制备方法
US12063027B2 (en) 2018-11-21 2024-08-13 Skyworks Solutions, Inc. Acoustic wave device with ceramic substrate
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