TWI272653B - Method for exposing a semiconductor wafer - Google Patents

Method for exposing a semiconductor wafer Download PDF

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Publication number
TWI272653B
TWI272653B TW090126744A TW90126744A TWI272653B TW I272653 B TWI272653 B TW I272653B TW 090126744 A TW090126744 A TW 090126744A TW 90126744 A TW90126744 A TW 90126744A TW I272653 B TWI272653 B TW I272653B
Authority
TW
Taiwan
Prior art keywords
exposure
wafer
range
semiconductor wafer
parameters
Prior art date
Application number
TW090126744A
Other languages
English (en)
Chinese (zh)
Inventor
Thorsten Schedel
Torsten Seidel
Original Assignee
Infineon Technologies Sc300
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Sc300 filed Critical Infineon Technologies Sc300
Application granted granted Critical
Publication of TWI272653B publication Critical patent/TWI272653B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW090126744A 2000-11-09 2001-10-29 Method for exposing a semiconductor wafer TWI272653B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00124564A EP1205806A1 (en) 2000-11-09 2000-11-09 Method for exposing a semiconductor wafer

Publications (1)

Publication Number Publication Date
TWI272653B true TWI272653B (en) 2007-02-01

Family

ID=8170335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090126744A TWI272653B (en) 2000-11-09 2001-10-29 Method for exposing a semiconductor wafer

Country Status (6)

Country Link
US (1) US6887722B2 (https=)
EP (2) EP1205806A1 (https=)
JP (1) JP4139216B2 (https=)
KR (1) KR100540778B1 (https=)
TW (1) TWI272653B (https=)
WO (1) WO2002039188A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873938B1 (en) * 2003-09-17 2005-03-29 Asml Netherlands B.V. Adaptive lithographic critical dimension enhancement
DE102004022329B3 (de) * 2004-05-06 2005-12-29 Infineon Technologies Ag Verfahren zur dynamischen Dosisanpassung in einem lithographischen Projektionsapparat und Projektionsapparat
US20060183025A1 (en) * 2005-02-14 2006-08-17 Micron Technology, Inc. Methods of forming mask patterns, methods of correcting feature dimension variation, microlithography methods, recording medium and electron beam exposure system
JP4682734B2 (ja) * 2005-07-29 2011-05-11 凸版印刷株式会社 フォトマスクのパターン描画方法
JP2008071838A (ja) * 2006-09-12 2008-03-27 Nec Electronics Corp 半導体装置の製造方法
JP2008091793A (ja) * 2006-10-04 2008-04-17 Tohoku Univ 露光方法及び露光装置
CN101086627B (zh) * 2007-04-29 2010-10-06 上海微电子装备有限公司 凸点光刻机的曝光方法
US9046788B2 (en) * 2008-05-19 2015-06-02 International Business Machines Corporation Method for monitoring focus on an integrated wafer
KR101504504B1 (ko) * 2008-05-21 2015-03-20 케이엘에이-텐코어 코오포레이션 툴 및 프로세스 효과들을 분리하기 위한 기판 매트릭스
JP4683163B2 (ja) * 2010-10-29 2011-05-11 凸版印刷株式会社 フォトマスクのパターン描画方法
CN102200696B (zh) * 2011-05-27 2014-10-22 上海华虹宏力半导体制造有限公司 利用聚焦与曝光量矩阵确定最佳光刻工艺参数的方法
CN103076722B (zh) * 2013-01-11 2016-03-09 无锡华润上华科技有限公司 一种用于减少晶片边缘区域曝光散焦的曝光方法及光刻工艺
US9715180B2 (en) 2013-06-11 2017-07-25 Cymer, Llc Wafer-based light source parameter control
CN111312608B (zh) * 2020-02-25 2022-09-02 上海华虹宏力半导体制造有限公司 晶圆参数的修调方法
CN111273520B (zh) * 2020-03-05 2023-08-11 浙江晶引电子科技有限公司 一种改善蚀刻均匀性的曝光方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851514A (ja) * 1981-09-22 1983-03-26 Toshiba Corp ウエハ露光方法及びその装置
JPS58156938A (ja) * 1982-03-12 1983-09-19 Hitachi Ltd 露光装置
JPH03211820A (ja) * 1990-01-17 1991-09-17 Canon Inc 自動現像装置
US5646870A (en) * 1995-02-13 1997-07-08 Advanced Micro Devices, Inc. Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers
JP2000100701A (ja) * 1998-09-24 2000-04-07 Sony Corp パターンの疎密差評価方法
TW396433B (en) 1998-11-27 2000-07-01 Vanguard Int Semiconduct Corp A multi-exposure process that raises microlithography margin
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム

Also Published As

Publication number Publication date
JP2004513528A (ja) 2004-04-30
US6887722B2 (en) 2005-05-03
KR100540778B1 (ko) 2006-01-11
US20040029027A1 (en) 2004-02-12
EP1205806A1 (en) 2002-05-15
EP1332407A1 (en) 2003-08-06
JP4139216B2 (ja) 2008-08-27
WO2002039188A1 (en) 2002-05-16
KR20030051787A (ko) 2003-06-25

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MM4A Annulment or lapse of patent due to non-payment of fees