KR100540778B1 - 반도체웨이퍼를 노광하는 방법 - Google Patents

반도체웨이퍼를 노광하는 방법 Download PDF

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Publication number
KR100540778B1
KR100540778B1 KR1020037006280A KR20037006280A KR100540778B1 KR 100540778 B1 KR100540778 B1 KR 100540778B1 KR 1020037006280 A KR1020037006280 A KR 1020037006280A KR 20037006280 A KR20037006280 A KR 20037006280A KR 100540778 B1 KR100540778 B1 KR 100540778B1
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KR
South Korea
Prior art keywords
exposure
wafer
areas
regions
semiconductor wafer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020037006280A
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English (en)
Korean (ko)
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KR20030051787A (ko
Inventor
쉐델토르스텐
사이델토르스텐
Original Assignee
인피네온 테크놀로지즈 에스시300 게엠베하 운트 코. 카게
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Publication of KR20030051787A publication Critical patent/KR20030051787A/ko
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Publication of KR100540778B1 publication Critical patent/KR100540778B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020037006280A 2000-11-09 2001-10-23 반도체웨이퍼를 노광하는 방법 Expired - Fee Related KR100540778B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00124564.6 2000-11-09
EP00124564A EP1205806A1 (en) 2000-11-09 2000-11-09 Method for exposing a semiconductor wafer
PCT/EP2001/012237 WO2002039188A1 (en) 2000-11-09 2001-10-23 Method for exposing a semiconductor wafer

Publications (2)

Publication Number Publication Date
KR20030051787A KR20030051787A (ko) 2003-06-25
KR100540778B1 true KR100540778B1 (ko) 2006-01-11

Family

ID=8170335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037006280A Expired - Fee Related KR100540778B1 (ko) 2000-11-09 2001-10-23 반도체웨이퍼를 노광하는 방법

Country Status (6)

Country Link
US (1) US6887722B2 (https=)
EP (2) EP1205806A1 (https=)
JP (1) JP4139216B2 (https=)
KR (1) KR100540778B1 (https=)
TW (1) TWI272653B (https=)
WO (1) WO2002039188A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873938B1 (en) * 2003-09-17 2005-03-29 Asml Netherlands B.V. Adaptive lithographic critical dimension enhancement
DE102004022329B3 (de) * 2004-05-06 2005-12-29 Infineon Technologies Ag Verfahren zur dynamischen Dosisanpassung in einem lithographischen Projektionsapparat und Projektionsapparat
US20060183025A1 (en) * 2005-02-14 2006-08-17 Micron Technology, Inc. Methods of forming mask patterns, methods of correcting feature dimension variation, microlithography methods, recording medium and electron beam exposure system
JP4682734B2 (ja) * 2005-07-29 2011-05-11 凸版印刷株式会社 フォトマスクのパターン描画方法
JP2008071838A (ja) * 2006-09-12 2008-03-27 Nec Electronics Corp 半導体装置の製造方法
JP2008091793A (ja) * 2006-10-04 2008-04-17 Tohoku Univ 露光方法及び露光装置
CN101086627B (zh) * 2007-04-29 2010-10-06 上海微电子装备有限公司 凸点光刻机的曝光方法
US9046788B2 (en) * 2008-05-19 2015-06-02 International Business Machines Corporation Method for monitoring focus on an integrated wafer
KR101504504B1 (ko) * 2008-05-21 2015-03-20 케이엘에이-텐코어 코오포레이션 툴 및 프로세스 효과들을 분리하기 위한 기판 매트릭스
JP4683163B2 (ja) * 2010-10-29 2011-05-11 凸版印刷株式会社 フォトマスクのパターン描画方法
CN102200696B (zh) * 2011-05-27 2014-10-22 上海华虹宏力半导体制造有限公司 利用聚焦与曝光量矩阵确定最佳光刻工艺参数的方法
CN103076722B (zh) * 2013-01-11 2016-03-09 无锡华润上华科技有限公司 一种用于减少晶片边缘区域曝光散焦的曝光方法及光刻工艺
US9715180B2 (en) 2013-06-11 2017-07-25 Cymer, Llc Wafer-based light source parameter control
CN111312608B (zh) * 2020-02-25 2022-09-02 上海华虹宏力半导体制造有限公司 晶圆参数的修调方法
CN111273520B (zh) * 2020-03-05 2023-08-11 浙江晶引电子科技有限公司 一种改善蚀刻均匀性的曝光方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851514A (ja) * 1981-09-22 1983-03-26 Toshiba Corp ウエハ露光方法及びその装置
JPS58156938A (ja) * 1982-03-12 1983-09-19 Hitachi Ltd 露光装置
JPH03211820A (ja) * 1990-01-17 1991-09-17 Canon Inc 自動現像装置
US5646870A (en) * 1995-02-13 1997-07-08 Advanced Micro Devices, Inc. Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers
JP2000100701A (ja) * 1998-09-24 2000-04-07 Sony Corp パターンの疎密差評価方法
TW396433B (en) 1998-11-27 2000-07-01 Vanguard Int Semiconduct Corp A multi-exposure process that raises microlithography margin
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム

Also Published As

Publication number Publication date
JP2004513528A (ja) 2004-04-30
US6887722B2 (en) 2005-05-03
US20040029027A1 (en) 2004-02-12
EP1205806A1 (en) 2002-05-15
EP1332407A1 (en) 2003-08-06
TWI272653B (en) 2007-02-01
JP4139216B2 (ja) 2008-08-27
WO2002039188A1 (en) 2002-05-16
KR20030051787A (ko) 2003-06-25

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