TWI272653B - Method for exposing a semiconductor wafer - Google Patents
Method for exposing a semiconductor wafer Download PDFInfo
- Publication number
- TWI272653B TWI272653B TW090126744A TW90126744A TWI272653B TW I272653 B TWI272653 B TW I272653B TW 090126744 A TW090126744 A TW 090126744A TW 90126744 A TW90126744 A TW 90126744A TW I272653 B TWI272653 B TW I272653B
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- wafer
- range
- semiconductor wafer
- parameters
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 86
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000001015 X-ray lithography Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 48
- 238000005530 etching Methods 0.000 abstract description 5
- 238000005137 deposition process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005363 electrowinning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/946—Step and repeat
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00124564A EP1205806A1 (en) | 2000-11-09 | 2000-11-09 | Method for exposing a semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI272653B true TWI272653B (en) | 2007-02-01 |
Family
ID=8170335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090126744A TWI272653B (en) | 2000-11-09 | 2001-10-29 | Method for exposing a semiconductor wafer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6887722B2 (enExample) |
| EP (2) | EP1205806A1 (enExample) |
| JP (1) | JP4139216B2 (enExample) |
| KR (1) | KR100540778B1 (enExample) |
| TW (1) | TWI272653B (enExample) |
| WO (1) | WO2002039188A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873938B1 (en) * | 2003-09-17 | 2005-03-29 | Asml Netherlands B.V. | Adaptive lithographic critical dimension enhancement |
| DE102004022329B3 (de) * | 2004-05-06 | 2005-12-29 | Infineon Technologies Ag | Verfahren zur dynamischen Dosisanpassung in einem lithographischen Projektionsapparat und Projektionsapparat |
| US20060183025A1 (en) * | 2005-02-14 | 2006-08-17 | Micron Technology, Inc. | Methods of forming mask patterns, methods of correcting feature dimension variation, microlithography methods, recording medium and electron beam exposure system |
| JP4682734B2 (ja) * | 2005-07-29 | 2011-05-11 | 凸版印刷株式会社 | フォトマスクのパターン描画方法 |
| JP2008071838A (ja) * | 2006-09-12 | 2008-03-27 | Nec Electronics Corp | 半導体装置の製造方法 |
| JP2008091793A (ja) * | 2006-10-04 | 2008-04-17 | Tohoku Univ | 露光方法及び露光装置 |
| CN101086627B (zh) * | 2007-04-29 | 2010-10-06 | 上海微电子装备有限公司 | 凸点光刻机的曝光方法 |
| US9046788B2 (en) * | 2008-05-19 | 2015-06-02 | International Business Machines Corporation | Method for monitoring focus on an integrated wafer |
| CN102037550B (zh) * | 2008-05-21 | 2012-08-15 | 恪纳腾公司 | 使工具与工艺效果分离的衬底矩阵 |
| JP4683163B2 (ja) * | 2010-10-29 | 2011-05-11 | 凸版印刷株式会社 | フォトマスクのパターン描画方法 |
| CN102200696B (zh) * | 2011-05-27 | 2014-10-22 | 上海华虹宏力半导体制造有限公司 | 利用聚焦与曝光量矩阵确定最佳光刻工艺参数的方法 |
| CN103076722B (zh) * | 2013-01-11 | 2016-03-09 | 无锡华润上华科技有限公司 | 一种用于减少晶片边缘区域曝光散焦的曝光方法及光刻工艺 |
| US9715180B2 (en) | 2013-06-11 | 2017-07-25 | Cymer, Llc | Wafer-based light source parameter control |
| CN111312608B (zh) * | 2020-02-25 | 2022-09-02 | 上海华虹宏力半导体制造有限公司 | 晶圆参数的修调方法 |
| CN111273520B (zh) * | 2020-03-05 | 2023-08-11 | 浙江晶引电子科技有限公司 | 一种改善蚀刻均匀性的曝光方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5851514A (ja) * | 1981-09-22 | 1983-03-26 | Toshiba Corp | ウエハ露光方法及びその装置 |
| JPS58156938A (ja) * | 1982-03-12 | 1983-09-19 | Hitachi Ltd | 露光装置 |
| JPH03211820A (ja) * | 1990-01-17 | 1991-09-17 | Canon Inc | 自動現像装置 |
| US5646870A (en) * | 1995-02-13 | 1997-07-08 | Advanced Micro Devices, Inc. | Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers |
| JP2000100701A (ja) * | 1998-09-24 | 2000-04-07 | Sony Corp | パターンの疎密差評価方法 |
| TW396433B (en) | 1998-11-27 | 2000-07-01 | Vanguard Int Semiconduct Corp | A multi-exposure process that raises microlithography margin |
| JP2003532306A (ja) * | 2000-05-04 | 2003-10-28 | ケーエルエー・テンコール・テクノロジーズ・コーポレーション | リソグラフィ・プロセス制御のための方法およびシステム |
-
2000
- 2000-11-09 EP EP00124564A patent/EP1205806A1/en not_active Withdrawn
-
2001
- 2001-10-23 WO PCT/EP2001/012237 patent/WO2002039188A1/en not_active Ceased
- 2001-10-23 EP EP01980511A patent/EP1332407A1/en not_active Withdrawn
- 2001-10-23 KR KR1020037006280A patent/KR100540778B1/ko not_active Expired - Fee Related
- 2001-10-23 JP JP2002541450A patent/JP4139216B2/ja not_active Expired - Fee Related
- 2001-10-29 TW TW090126744A patent/TWI272653B/zh not_active IP Right Cessation
-
2003
- 2003-05-09 US US10/435,449 patent/US6887722B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030051787A (ko) | 2003-06-25 |
| US6887722B2 (en) | 2005-05-03 |
| EP1205806A1 (en) | 2002-05-15 |
| US20040029027A1 (en) | 2004-02-12 |
| EP1332407A1 (en) | 2003-08-06 |
| KR100540778B1 (ko) | 2006-01-11 |
| WO2002039188A1 (en) | 2002-05-16 |
| JP2004513528A (ja) | 2004-04-30 |
| JP4139216B2 (ja) | 2008-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |