TWI271803B - Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films - Google Patents

Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films Download PDF

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Publication number
TWI271803B
TWI271803B TW094122815A TW94122815A TWI271803B TW I271803 B TWI271803 B TW I271803B TW 094122815 A TW094122815 A TW 094122815A TW 94122815 A TW94122815 A TW 94122815A TW I271803 B TWI271803 B TW I271803B
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Taiwan
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film
gas
depositing
nitrogen
substrate
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TW094122815A
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English (en)
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TW200610057A (en
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Raymond Joe
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Tokyo Electron Ltd
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds

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  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)

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1271803 九、發明說明： 【發明所屬之技術領域】 含石夕種基板處理技術，且尤關於-種基板之上的 加強辦餘沈積方法。 膜=半導體產業之中的大量應用。含_薄膜包 =ΐϊ rtr ΐ夕（多晶⑴與蟲日⑽、销晶片（SiGe)、 礙切⑽）、氮切_、碳氮化石夕 積技術各種物理及/或化學沉 :=4ί; Ϊ2ί性質、正在製造之裳置所引起的物 積方法:所及衣造處理有關的成本因素而決練佳的沉 本考量之可為—種能夠滿足恰當的技術要求與成 材料學，沈積（cvd)為積體電路製造時用以沉積 1 ίΓ 物質輸制基板表面且經由-個或更多個 肩ΐ反°。故形成固態膜。典型地選擇有利於產生化學反 子具有足以轉游離碰撞量，因此，選 件(例如處理錢力、氣體流量等等）下的特Ϊ 、、、且氣“產生翻於正在處理室之㈣行的特定之處理的一 5 1271803 群帶電物質與化學反應性物質。 電漿激發通常使薄膜形成反應得以在遠低於 CVD形成類似的薄膜時典型所需之溫度的低溫狀;= 敖發的 外，電漿激發能夠啟動薄膜形成的化學'：^。此 f為能量偏轴力傾向。·，可之中 PECVD膜之化學與物理性質在相當大的範圍内變化处。里多數而使 SiN已廣泛地用於半導體裝置而作為鈍化膜 (SiH4) ^3；ί?ΐνηί 使用一虱矽甲烷（SlH2Cl2)與的熱cvd 次 f t，SiH4的爆炸性與腿必的腐谢生，故i須1對處二 .進嚴格的控制且必須小心地處理廢液。又只「广”,木 ’而這與先進裝置處 的=並，。雖然為了沉積SiN膜而以j 二= 基酸)石夕，AS)與六氯二魏(Hc=^ f置性心’::要替代的沉積方法，其必須能夠提供較佳的 衣置、|父小的熱預鼻、及較少的處理系統 【發明内容】 统盘int—i基板之上的含石夕氮膜之低溫電漿加強沉積系 漿社t激發反應氣體、隨後，使被激體ϊ ，體此合、及在化學氣相沈積處理之中從被激發的氣 體〜合物將含矽氮膜沉積在基板之上。 、W j本發明之一實施例中，提供一種基板之上的SiCNH膜之低 j水加強沉積方法。本方法係包括在處理室之中設置基板、在 二二,電浆源之中激發含氮的反應氣體、隨後，使被激發的反應 ^體與魏烧_氣體混合、及在化學氣相沈積處理之中從被激 ^的氣體混合物將SiCNH膜沉積在基板之上。含氮的反應氣體包 括N2、NH3、、NO、或Να、或其中兩個或更多個的組合。 在本發明之另一實施例中，提供一種基板之上的siCN〇H膜 6 1271803 之低溫電漿加強沉積方法。本方法係包括在處理室之中設置美 板、在隔開的電漿源之中激發含氧的反應氣體、隨後，彳2被& 的反應氣體與石夕氨烧前驅氣體混合、及在化學氣相沈積處理之 從被激發的氣體混合物將SiCNOH膜沉積在基板之上。'含氣= 應氣體包括〇2、〇3、氏〇2、氏0、NO、或KO、或其中兩個或更 多個的組合。 ^發明之其它㈣及優點可參照以下之詳細說日狀圖示 『寸圖而更加清楚。在圖式中，相似的參考符號指“ 【實施方式】 圖1顯示根據本發明之一實施例的基板之上 強沉積的批次型處理系統之簡化方塊圖 括，室10與位在其中之處理管25，而處理管^則ί ί ，25將氣體排除到真^玆 ^隔咖斜此t 在垂 係设在旋韓a 26夕l I» 士土 中基板托木35 烈所驅動^軸21之上=/^ ^在貫穿蓋子27且由馬達 高薄膜整體的均勻性、或^在處理_進行旋轉而提 應管25 以將基板托架35傳送進及傳送出反 歧管2的開口端。在、取上端的位置時，就利用蓋子27封閉 r壁部之中形⑶的 7 1271803 批次型處理系統1係包括氣體輸送系統，其包括氣體供應管 線45。使氣體供應管線45連接至石夕氨院氣體源95與隔開^聚 源94。隔開的電漿源係代表位在與處理室遠離之位置處的電漿 源，亦即受處理的基板所在之處理室的外部，故在之後必須將二 激發的氣體輸送到處理室。矽氨烷氣體源95包括液體輸送盥 矽氨烷源。使用液體質流控制器控制流入氣化器之中的熊矽騎' 烧前驅物質材料之流量’而在其中進—步使氣化的 質材料與例如氬（A〇等惰性載子氣體混合。又，若 的蒸氣㈣高的話，則可以利用發泡系統取代惰性载 P高開的電漿源94形成為從反應氣體源96激發反應氣體:= 電漿源94為’例如，微波電襞源，其中微波功率在、約5〇〇 、 至約5,000W之間。微波頻率為，例如，2 45GHz或8 3gHz。 j被激發的反應氣體與來自隔開的電漿源94之下游 ，官線45之中的氣體源95之魏烧前驅氣體混合。接著开; 土^被激，的氣體混合物流人處理室丨。的反應管25之 反本是：在將被激發喊體混合物通入 f ?先使來自隔開的電漿源94之被激發的反應氣 -/、來自_但位在處理室1()内部的電漿源94之下^ 統所示的實施例中，氣體輸^系、 且流，基板彳。之上，私在基板⑽之上崎體混合物 其能夠高達每β、20=;ί二久?咖，包括乾式真空泵浦， ^由麗2調整處理壓力。_器84從處^ 未反應的前驅物質材料與反應副產物。 收木 處理監測系、统92係包含感測器75，能夠進行即 ’歹’如，包含質譜儀（MS)或傅立葉轉換紅外線光譜儀(ϋ)二 8 1271803 與處理系統〗監着理緣1之細、更足以 體源95 * 96、fT門;以啟動。又’使控制器9〇轉合於氣 20 ：15 65 ?7〇^ ' ^ 28'^ ^ ^ 訊。可以將㈣,“η # ^真空泵浦系統88，並能夠與其交換資 精密工作站—成美國制奥斯汀市之_公司的戴爾 低、、^ifr根據本發明之另—實施_基板之上的切氮膜之 100皿圓處理系統之簡化方塊圖。處理系統 使基ifuiti處理室110 ’用以安裝支撐基板125且 205 if，自上應上體:應源145的反應氣體流入隔開的電⑽ 隔開的· μ 細彡成為產生激發反應氣體所f的電漿。 為]如’微波電漿源’其中微波功率在約· J —至約5，G(K)W之間。微波頻率為，例如，2.45GHz或 ^雜在隔開的電漿源施之下游，氣體源刚係供應梦氨烧 體與被激發的反應氣體在氣體供應 吕線175的軋體輸达系統之中混合。類似地，如同圖丨所示， 體源⑽係包括液體輸送系統或發泡⑽。接著使所形成之被激 發的氣體混合物215流入處理室π〇之中。使用更包括氧 以未圖示）、-組擋板（未圖示）與多孔之蓮蓬頭氣體注入 之軋體輸迗系統而將被激發的氣體混合物215通入到處理室ιι〇 之中的處理區160。雖然未詳細圖示，但本發明亦可以是：在將被 激發的氣體混合物215通入處理區160之前、就先使來自隔開的 電漿源205之被激發的反應氣體與來自隔開的電漿源2〇5之下游 但位在處理室110内部的氣體源14〇之矽氨烷前驅氣體混合。將 處理室110連接至真空泵浦系統150，其包括渦輪分子真空泵浦 (TMP) ’能夠具有高達約每秒5,〇〇〇公升（及更大）之抽真空速 9 1271803 度、及閘閥，用以控制氣體壓力。 當藉由安裝在基板托架120之内的基板升降銷（未圖示）接 收到基板且藉由安裝在其中之裝置機械性地調動之後，就藉由機 械手臂的基板傳送系統210而經由槽閥（未圖示）及處理室進料 部、(,未圖示）將基板125傳送進及傳送出處理室n〇。一旦從基板 傳送系統210接收到基板125之後，就將基板降低到基板托架12〇 的上表面。
藉由靜電夾鉗（未圖示）將基板125固定在基板托架120。又， ，板托架120係包括加熱器元件13〇且基板托架12〇更包括冷卻 系統1括從基板托架120吸熱且放熱到熱交換系統（未圖示） =再循環的冷媒越。又，將氣體輸送到基板的背面而提高基板 5與基板托架12〇之間的氣隙熱傳導率。在升高或降低基板的溫 度而需要進行溫度控制時，就可以利用此種系統。 控制器155係包括微處理器、記憶體、及能夠產生控制電壓 ^丈位I/O戈皐’而此控制電壓不僅足以監測處理系、統議之輸 ，、更足以與處理系統100之輸人軌並純啟動。又，使控制 Γΐ55^合於處理室110、氣體源140與145、隔開的電漿源205、 ΰ。二、°，根據儲存的處理配方而利用儲存在記憶體 、、私式控制刚迷處理系、统1〇〇之元件。控制器⑸之一實例 為吳國德州奥斯、;Τ市之戴爾公司的_精密玉作站61qTM。、 ㈣:祕特定硬體的許多變化樣態皆可驗實現本 又士 且讀變化樣態為具備本項技藝之-般知識的 盘二二二絲故圖1與圖2之處理系統純屬例示性。圖1 200 5 ^ ^ 200mm基板、3G()mm基板、甚至更大的基板。 圖3為根據本舍明之一實施例的基 心 處理至之中。處理至為，例如，圖1與圖2分別所示之處理室i 1271803 或100的其中一個。基板為，例如，半導體基板，例如Si基板、 含Ge的Si基板、Ge基板、或化合物半導體基板，且包括各種主 動裝置及/或隔離區。 在步驟312，使反應氣體流入隔開的電漿源之中且被激發。在 本土月之κ知例中’反應氣體包括含氮的氣體。在本發明之另 -貫施例中，反應氣體包括含氧的氣體。在步驟314，使被電聚激 應氣體與隔’電漿源之下游㈣氨烧前驅氣體混合。在 ^^16,在化學氣概積處理之巾從被㈣軌體混合物 氮膜沉積在處理室中的基板之上。 之實施例’在隔開的電漿源之中的被激發的反應 if 發的反應氣體與含碎的魏烧前驅氣體之實 ί 進行。此種分開進行對沉積處理、含魏膜的成份、 其7^具有更大的控制。被激發的反應氣體係包括自由 ^冗产而f⑪魏前驅氣體混合時，其得以使基 及控制沉積的含矽氮膜之中的碳含 板妳ΐίίίίΐΐϊ，其使所有的氣體暴露於電漿源，且使基 盆ΐ含珍:本發明之實施例係利用隔開的電漿源， 體並不直接接觸電漿源，而是使與隔開 ϊίΐΐ發的反應氣體混合。因此，基板並不 JStf’，縣係可能對_的_造成破壞。 可雜由錢實驗及，或實驗設計 ΐϊ 整的處理參數包含，例如，隔開的電漿功率、 ί體Ξι。" 1力、反應氣體的種類與梦氨烧氣體、及相關的 含石夕氣膜中’反應氣體包括含氮的氣體且沉積的 ，、_、或其中兩個或更)多==== 11 1271803 吞氣的氣脰之氣體流量在，例如，約sccm至約5 ，前使用_CVD · pe⑽處理所= 造之中的其它薄膜而言，對 “ 二，=由改變處理條件可以調整含魏膜 二ίΐ::力率、基板溫度、處理壓力、反應氣體的種類盥 矽虱j：兀乳體、及相關的氣體流量。 、… 別含例中’沉積的Sic顺膜之中的碳與氫之個 之中的石夕與氮之個別含量。在本發明之另-每 與叙㈣销敵組合含量制、於薄膜i 的含石夕/知例中’反應氣體包括含氧的氣體且沉積 2 02 〇 i ί Ϊ ^氧、及氫（亦即SiCN0H)。含氧的氣體包 合。流到‘將人。二0、或_、或其中兩個或更多個的組 ^ S_H膜係具有作為低k值之層間膜的應 用低的熱預狀與基板的其它_相容之特性。 ，本务明之一實施例中，沉積的&C =係小於薄膜之中⑽與氧之個別含量膜:== 中或^ ί的ί 處理條件包括在約10 mT⑽至約4町⑽ 處理條件更包括在約丨观至約_。〇之間的 石夕氨烧前驅物質係包括_結構單元。有機魏院前驅物質 12 1271803 更包括鍵結到Si原子（或多個Si原子）之至少一個烷基。烷基為， 例如甲基、乙基、丙基、或丁基、或其組合。又，烷基為環烴基， 例如本基。此外’烧基可以是乙烯基。根據本發明之一實施例， 石夕氣烧氣體流量在約1 seem至約500 seem之間。表格1顯示根據 ^發明之實施例的用於沉積含矽氮膜之矽氨烧與有機石夕氨烧化人 表格1 三乙基矽氨烷 三丙基矽氨烷 三苯基矽氨烷 四曱基二矽氨烷 六曱基二矽氨烷 六乙基二石夕氨烧 六苯基二石夕氨烧 七曱基二矽氨烷 二丙基-四甲基二矽氨烷 二-η-丁基-四曱基二石夕氨烧 二-η-辛基-四甲基二矽氨烷 一^基"二曱基壤二碎氨烧 六曱基環三石夕氨烧 六乙基環三矽氨烷 六苯基環三石夕氨烧 八曱基環四矽氨烷 八乙基環四矽氨烧 四乙基_四曱基環四石夕氨烧 氰丙基曱基矽氨烷 四苯基二甲基二矽氨烷 亡苯基-四曱基二矽氨烷 二乙烯-三曱基環三矽氨烷
SiC6H17NS1C9H23N SiC18H17NSi2C4Hi5]S[ ^Ϊ2〇12Η31ΚSi2C36H31isf 8ΐ2〇7Η21Ν Si2C10H27K
^ί2〇2〇Η47ΚS12C9H27N3 ^13〇6Η2ιΝ3Si3Ci2H33K[3Si3C36H33N3 Si4C8H28K4Si4C16H44K4 Si4C12H36H4SiC5H10N2 Si2C26H27K Si2C16H23H Si3C9H21N3 13 上271803 四四甲基環四石夕氨烧 甲基二矽氨烷
si4C12H28N4 Si2C8H19N 膜之低溫電板之上的含石夕氮 厨驅物質
B
OH c H3〜一s卜一沖一 g [
CH 及三前驅物㈣包括Si_N_Si結構單元 2〇 Torr H f基°前驅物質為在2叱具有約 用於半導體製造之中係f為處理氣體而已 性而降低底層氧化層的含水量ΓΗΜΠ$ 由提商表面斥水 與處理;有以下優點··獅s前驅物質 且其產=、二 1:易處理，觸前驅物質為低成本， 麻虽f然以上已詳細說明本發明之特定例示性實施例，作孰朵本 3 ti人士應清楚理解：只要在不脫離本發明之‘的教= 、月況下，可以對上述例示性實施例進 y 本發明之觀射包括财可能之樣能。"口此 【圖式簡單說明】 ~ 批―加剌基板之上的含魏膜之低 / 皿电I加強》儿積的批次型處理系統之簡化方塊圖。 低基板之上的切氮膜之 低/皿电水加強此和的早一晶圓處理系統之簡化方塊圖。 圖3為根據本發明之一實施例的基板之上的含石夕氮膜之低溫 14 1271803 電聚加強沉積的流程圖。 【主要元件符號說明】 1 批次型處理系統 10、110 處理室 15、20、65、70 加熱器 100 處理系統 105 基座 120、35 基板托架 125 > 40 基板（或晶圓） 130 加熱器元件 140、145、95、96 氣體源 150 真空泵浦系統 155、90 控制器 160 處理區 165 氣體注入板 175、45 氣體供應管線 2 歧管 21 轉軸 22 升降器 23 上端 24 下端 25 處理管 26 旋轉台 27 蓋子 28 馬達 205、94 電漿源 210 基板傳送系統 215 氣體混合物 30 熱反射器 15 1271803 300 沉積方法 310、 312、314、316 步驟 46 氣體注入系統 47 孔部 75 感測器 80 排氣管 82 自動壓力控制器 (APC) 84 陷阱器 86 真空泵浦 88 真空栗浦系統 92 處理監測系統 16

Claims (1)

1271803 十、申請專利範圍： 1.一種含矽氮膜的沉積方法，包含以下步驟： 一基板的設置步驟，在一處理室之中設置一其板. 一反應氣體的激發步驟，在與處理室^開的^漿源之中激發 一反應氣體； 混合倾、，在反應氣體崎發步驟之後，使被激發的反應 氣體兵-石錢烧前驅氣體混合而形成_被激發的氣體混合物；及 ->儿積步驟，在-化學氣相沈積處理中，從被激發的氣體混 • 合物將一含矽氮膜沉積在處理室之中的該基板之上。 • 2·如申請專利範圍第丨項之含魏膜的沉積方法，其中該基板係包 含Si基板、含Ge的Si基板、Ge基板、或化合物半導體基板。 3·如申請專利範圍第1項之含矽氮膜的沉積方法，其中該反應氣體 係包含一含氮的氣體，包括N2、NH3、AH2、NO、或N20、或其 中兩個或更多個的組合。 ^ 4·如申請專利範圍第3項之含矽氮膜的沉積方法，其中該沉積的膜 之中的碳與氫之個別含量係小於膜中的石夕與氮之個別含量。 •籲 5.如申請專利範圍第3項之含矽氮膜的沉積方法，其中該沉積的膜 • 之中的碳與氫之組合含量係小於膜之中的石夕與氮之組合含量。 6·如申請專利範圍第3項之含矽氮膜的沉積方法，更包含一含氮的 氣體的輸送步驟，將流量在約10 seem至約5,000 seem之間的一 含氮的氣體輸送到電漿源。 7·如申請專利範圍第1項之含矽氮膜的沉積方法，其中反應氣體係 包含一含氧的氣體，包括〇2、〇3、H202、H2〇、NO、或n2〇、或 17 1271803 其中兩個或更多個的組合。 8·如申晴專利範圍第7項之含矽氮膜的沉積方法，豆 之中的碳與氫之個別含量係小於薄膜之中的石夕與氧之姻联
10.如申請專利範圍第7項之含矽氮膜的沉積方法，更包含一人— 的氣體的輸送步驟，將流量在約10sccm至約5,〇〇〇sccm之7 一含氧的氣體輸送到電漿源。 B勺 =·如申請專利範圍第1項之含矽氮膜的沉積方法，其中該矽 前驅氣體係包含一有機矽氨烷前驅物質。 * 70 =·如申請專利範圍第1項之含矽氮膜的沉積方法，其中該矽氨户 剞驅氣體係包含三乙基石夕氨烧、三丙基石夕氨烧、三苯基石夕氨垸、 氨烷、四曱基二矽氨烷、六曱基二矽氨烷、六乙基二矽氨烷、 /、本基—石夕氨烧、七曱基二石夕氨烧、二丙基_四曱基二石夕氨烧、二 _ _n_丁基_四曱基二矽氨烷、二-η-辛基_四甲基二矽氨烷、三乙基三 曱基環三矽氨烷、六曱基環三矽氨烷、六乙基環三矽氨烷、六^ 基環三矽氨烷、八曱基環四矽氨烷、八乙基環四矽氨烷、四乙基 四甲基環四矽氨烷、氰丙基甲基矽氨烷、四苯基二甲基二矽氨燒 二苯基四甲基二矽氨烷、三乙烯三曱基環三矽氨烷、四乙烯_四甲 基環四石夕氣烧、或二乙烯四甲基二石夕氨烧、或其中兩個或更多個 的組合。 13·如申請專利範圍第1項之含矽氮膜的沉積方法，其中使矽氨烷 氣體與流量在約1 sccm至約500 seem之間的被激發的反應氣體混 18 1271803 合0 14·如申請專利範圍第1項之含矽氮膜的沉積方法，更包含一操作 步驟，在約lOmTorr至約400Torr之間的氣體壓力下操作該^理 15.如申請專利範圍第1項之含矽氮膜的沉積方法，更包含一加熱 步驟’將基板加熱到約150°C至約600。〇之間。
16·如申請專利範圍第1項之含矽氮膜的沉積方法 氣體混合物更包含一惰性氣體。 ’其中被激發的 Π.如申請專利範圍第16項之含矽氮膜的沉積方法，其中輸量 在約5 seem至約20,000 seem之間的惰性氣體。 、 I8·如申請專利範圍第1項之含石夕氮膜的沉積方法， 置步驟係包含在-批次型處理室之中放置片之間土的基板。 19.如申請專利翻第i項之含魏臈的沉積方法，i 置步驟係包含在單一晶圓處理室之中放置一基板。，、土板勺口又 2〇.如申請專概圍第1項之含魏_沉積 人 =含舰激反錢雜賴社下_錢鮮 ’其中含矽氮膜 ’其中反應氣體 21·如申請專利範圍第丨項之含矽氮膜的沉積 為側壁膜、阻障膜、钱刻終止膜、或低k值膜。 22·如申請專利範圍第1項之含矽氮膜的沉積方法 19 1271803 的激發步_包含在_的微波鎌源之巾以電漿激發反應氣 體0 23·—種SiCNH膜的沉積方法，包含以下步驟： 一基板的设置步驟，在一處理室之中設置一基板； 一含氮的反應氣體的激發步驟，在與處理室隔開的電漿源之 中激發一含氮的反應氣體； 一，合步驟，在含氮的反應氣體的激發步驟之後，使被激發 的反應氣體與’氨烧前驅氣體混合而形成—被激發的氣體混合 物；及
一沉積步驟，在一化學氣相沈積處理中 合物將一 SiCNH膜沉積在基板之上。 ，從被激發的氣體混 24·如申請專利範圍第23項之SiCNH膜的沉積方法，豆中SiCNH ，之中的碳與氫之個別含量係小於薄膜之中的矽與氮^個別含
26. 如申請專利範圍第μ項之Sic丽膜的沉積方法， 包括N2、丽3、耶2、N0、或N20、或其中兩個:戈更 27. ，申請專利範圍第23;貝之沉丽膜的沉積方法，其 j胰之中的碳與氫之組合含量係小於該膜中的矽與氮之組合含貝 28.如申請專利範圍第23項之SiCNH膜的沉積方法，更包含一含 20 1271803 氮的反應氣體的輸送步驟，將流量在約1〇sccm至約5，⑻〇sccm 之間的一含氮的反應氣體輸送到電漿源。 29j〇申請專利範圍第a項之沉而膜的沉積方法，其中該石夕氨 烧鈿驅氣體係包含一有機石夕氨烧前驅物質。 30f申請專利範圍第23項之沉顺膜的沉積方法，其中該 烧前㈣包含三乙基梦魏、三丙基魏烧、三苯基梦氨烧、 烧、四曱基二石夕氨烧、六甲基二魏烧、六乙基二石夕氨燒、 八本基一矽氨烷、七甲基二矽氨烷、二丙基-四甲基二矽氨烷、二 -η-丁，-四甲基二矽氨烷、二_n_辛基_四甲基二矽氨垸、三乙基三 Ιί環，ί燒、六甲基環三魏烧、六乙基環三發氨炫、六苯 基衣二矽虱烷、八甲基環四矽氨烷、八乙基環四矽氨烷、四乙 四四魏烧、氰丙基甲基魏烧、四苯基二甲基二石夕氨炫、 j基·四甲基二魏烧、三乙烯三甲基環三魏垸、四乙稀四甲 四魏烧、或二乙烯四曱基二碎氨烧、或其中兩個或更多個 3^^申請專利範圍第23項之SiCNH膜的沉積方法’其中使該矽 ,· $燒氣體與流量在約丨secm^，⑺咖之間的被激發的反應氣 體混合。 32·如申請專利範圍第；23項之SiCNH膜的沉積方法，更包含一操 作f驟，在約l〇mTorr至約400T〇rr之間的氣體壓力下操作該^ 理室。 33·如申請專利範圍第23項之SiCNH膜的沉積方法，更包含一力π 熱步驟’將基板加熱到約150°C至約600°C之間。 21 1271803 34·如申請專利範圍第23項之SiCNH膜的沉積方法，其中該被激 号X的氣體混合物更包含一惰性氣體。 =·如申請專利範圍第34項之SiCNH膜的沉積方法，其中該惰性 氣體係以約5 seem至約20,000 seem之間的流量被輸送。 36·如申請專利範圍第23項之siCNH膜的沉積方法，其中該基板 的設置步驟係包含在一批次型處理室之中放置〗至2〇〇片的基板。 m 37.如申請專利範圍第23項之SiCNH膜的沉積方法，其中該基板 售的設置步驟係包含在單一晶圓處理室中放置一基板。 38·如申請專利範圍第23項之SiCNH膜的沉積方法，其中該混合 步驟係包含使被激發的反應氣體與電漿源之下游的矽氨烷氣體混 合。 ” 3j·如申請專利範圍第23項之SiCNH膜的沉積方法，其中該含矽 氮膜為侧壁膜、阻障膜、钱刻終止膜、或低k值膜。 肇40.—種SiCNOH膜的沉積方法，包含以下步驟： 一基板的設置步驟，在一處理室之中設置一基板； • 一含氧的反應氣體的激發步驟，在與處理室隔開的電漿源之 中激發一含氧的反應氣體； -混合步驟，在含氧的反聽體的激發㈣之後，使被激發 的反應氣體與-石夕氨烧前驅氣體混合而形成一被激發的氣體混合 物；及 -沉積步驟’在-化學氣相沈積處理巾，從被激發的氣體混 合物將一 SiCNOH膜沉積在基板之上。 22 1271803 41.如申請專利範圍第4〇項之SiCNOH膜的沉積方法，其中該基 板包含Si基板、含Ge的Si基板、Ge基板、或化合物半導體基 42_如申請專利範圍第40項之SiCN0H膜的沉積方法，豆中該反 應氣體包含-含氧的氣體，包括〇2、〇3、H2〇2、h2〇 /N〇 :"或 N2〇、或其中兩個或更多個的組合。 ’ 43. 如=請專利範圍第40項之siCN〇H膜的沉積方法，其中該沉 積的膜之中的碳與氫之個別含量係小於該膜之中的矽盥氧之個別 ’ 含量。 睿 44. 如，請專利範圍第4〇項之SiCNOH膜的沉積方法，其中該沉 積^膜之中的碳與氫之組合含量係小於該膜之中的矽與氧之组人 含量。 /、 '> cr 申請專利範圍第40項之siCN〇H膜的沉積方法，更包含一 含氧的反應氣體的輸送步驟，將流量在約1〇 sccm至約5,〇〇〇 sccm 之間的一含氧的反應氣體輸送到電漿源。 ’ ，鲁請專利範圍第40項之sicN〇H膜的沉積方法，其中該矽 氦烷刖驅氣體包含一有機矽氨烷前驅物質。 t7·^!請專利範圍第40項之SiCN〇H膜的沉積方法，其中該矽 ，烧禮物質係包括三乙基魏烧、三丙基魏烧、三苯基石夕氨 ，二二矽氨烷、四曱基二矽氨烷、六甲基二矽氨烷、六乙基二矽 ，烷二六苯基二矽氨烷、七曱基二矽氨烷、二丙基·四曱基二矽氨 少元 11 丁基-四甲基二石夕氨烧、二辛基_四甲基二梦氨烧、三 二I，環三石夕氨烧、六曱基環三石夕氨烧、六乙基環三石夕氨烧、 八本基環二矽氨烷、八曱基環四矽氨烷、八乙基環四矽氨烷、四 23 1271803 乙基四甲基環四矽氨烷、氰丙基T基矽氨烷、四苯基二甲美一 氨烷、二苯基-四甲基二矽氨烷、三乙烯三甲基環三矽氨烧= 烯-四甲基環四矽氨烷、或二乙烯四甲基二矽氨烷、或其中兩個 更多個的組合。 >Λ ^ 48.如申請專利範圍第40項之SiCNOH膜的沉積方法，其中使該 石夕氣烧氣體與流量在約1 seem至約500 seem之間的被激發的反應 氣體混合。 • 49·如申請專利範圍第40項之SiCNOH膜的沉積方法，更包含一 •φ操作步驟，在約lOmTorr至約400Torr之間的氣體壓力下操作該 處理室。 μ 50·如申請專利範圍第40項之SiCNOH膜的沉積方法，更包含一 加熱步驟，將基板加熱到約15〇°C至約600°C之間。 51·如申請專利範圍第4〇項之SiCNOH膜的沉積方法，其中該被 激發的氣體混合物更包含一惰性氣體。 52=申請專利範圍第51項之SiCNOH膜的沉積方法，其中該惰 ' 性氣體在約5 seem至約20,000 seem之間的流量被輸送。 53·如申請專利範圍第4〇項之siCN〇H膜的沉積方法，其中該基 板的設置步驟係包含在一批次型處理室之中放置1至2〇〇片之間 的基板。 54·如申請專利範圍第4〇項之siCN〇H膜的沉積方法，其中該基 板的設置步驟係包含在單一晶圓處理室之中放置一基板。 24 1271803 55·如申請專利範圍第40項之SiCNOH膜的沉積方法，其中該混 合步驟係包含使被激發的反應氣體與電漿源之下游的石夕氨烧氣 混合。 兀氺-=如申請專利範圍第40項之SiCN0H 膜為阻障膜、钱刻終止膜、或低k=。
25
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