TWI271012B - Semiconductor light-source device - Google Patents

Semiconductor light-source device Download PDF

Info

Publication number
TWI271012B
TWI271012B TW92118807A TW92118807A TWI271012B TW I271012 B TWI271012 B TW I271012B TW 92118807 A TW92118807 A TW 92118807A TW 92118807 A TW92118807 A TW 92118807A TW I271012 B TWI271012 B TW I271012B
Authority
TW
Taiwan
Prior art keywords
photodiode
light
semiconductor light
semiconductor
monitor
Prior art date
Application number
TW92118807A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403906A (en
Inventor
Yoshimaro Fujii
Hiroshi Oguri
Kouji Okamoto
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200403906A publication Critical patent/TW200403906A/zh
Application granted granted Critical
Publication of TWI271012B publication Critical patent/TWI271012B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
TW92118807A 2002-07-11 2003-07-10 Semiconductor light-source device TWI271012B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002203073A JP4012776B2 (ja) 2002-07-11 2002-07-11 半導体光源装置

Publications (2)

Publication Number Publication Date
TW200403906A TW200403906A (en) 2004-03-01
TWI271012B true TWI271012B (en) 2007-01-11

Family

ID=30112656

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92118807A TWI271012B (en) 2002-07-11 2003-07-10 Semiconductor light-source device

Country Status (4)

Country Link
JP (1) JP4012776B2 (ja)
AU (1) AU2003281004A1 (ja)
TW (1) TWI271012B (ja)
WO (1) WO2004008548A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130302132A1 (en) 2012-05-14 2013-11-14 Kiva Systems, Inc. System and Method for Maneuvering a Mobile Drive Unit
WO2008088018A1 (ja) * 2007-01-18 2008-07-24 Nec Corporation 半導体受光素子
JP6084401B2 (ja) * 2012-08-30 2017-02-22 浜松ホトニクス株式会社 側面入射型のフォトダイオードの製造方法
JP6397460B2 (ja) * 2016-11-04 2018-09-26 浜松ホトニクス株式会社 半導体ウエハ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035593A (ja) * 1984-06-29 1985-02-23 Hitachi Ltd 半導体装置
JPH02260680A (ja) * 1989-03-31 1990-10-23 Sharp Corp 波長安定型半導体レーザ装置
JP3238823B2 (ja) * 1993-03-19 2001-12-17 富士通株式会社 受光素子
JP2833438B2 (ja) * 1993-09-17 1998-12-09 日立電線株式会社 単一波長受光素子
JPH08148756A (ja) * 1994-11-16 1996-06-07 Mitsubishi Electric Corp 半導体レーザ装置
JPH0964383A (ja) * 1995-08-22 1997-03-07 Hitachi Ltd 光電子装置
JP2002314120A (ja) * 2001-04-18 2002-10-25 Hamamatsu Photonics Kk ホトダイオード

Also Published As

Publication number Publication date
AU2003281004A1 (en) 2004-02-02
WO2004008548A1 (ja) 2004-01-22
JP2004047728A (ja) 2004-02-12
TW200403906A (en) 2004-03-01
JP4012776B2 (ja) 2007-11-21

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MM4A Annulment or lapse of patent due to non-payment of fees