TWI268535B - Substrate heating apparatus and manufacturing method for the same - Google Patents
Substrate heating apparatus and manufacturing method for the sameInfo
- Publication number
- TWI268535B TWI268535B TW094118168A TW94118168A TWI268535B TW I268535 B TWI268535 B TW I268535B TW 094118168 A TW094118168 A TW 094118168A TW 94118168 A TW94118168 A TW 94118168A TW I268535 B TWI268535 B TW I268535B
- Authority
- TW
- Taiwan
- Prior art keywords
- heating apparatus
- manufacturing
- same
- substrate heating
- substrate
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000919 ceramic Substances 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Surface Heating Bodies (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004178659A JP2006005095A (ja) | 2004-06-16 | 2004-06-16 | 基板加熱装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200603231A TW200603231A (en) | 2006-01-16 |
| TWI268535B true TWI268535B (en) | 2006-12-11 |
Family
ID=35598364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094118168A TWI268535B (en) | 2004-06-16 | 2005-06-02 | Substrate heating apparatus and manufacturing method for the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7247818B2 (zh) |
| JP (1) | JP2006005095A (zh) |
| KR (1) | KR100672802B1 (zh) |
| TW (1) | TWI268535B (zh) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4689425B2 (ja) * | 2005-09-30 | 2011-05-25 | 株式会社Ｉｈｉ | マイクロコンバスタ |
| JP4751742B2 (ja) * | 2006-03-13 | 2011-08-17 | 株式会社リコー | 撮影レンズ駆動制御装置 |
| JP2008108703A (ja) * | 2006-09-28 | 2008-05-08 | Covalent Materials Corp | 面状ヒータ及びこのヒータを備えた半導体熱処理装置 |
| KR100867191B1 (ko) * | 2006-11-02 | 2008-11-06 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
| JP5112091B2 (ja) * | 2007-01-31 | 2013-01-09 | 太平洋セメント株式会社 | 静電チャック及びそれを用いた被吸着物の加熱処理方法 |
| US20090031955A1 (en) * | 2007-07-30 | 2009-02-05 | Applied Materials, Inc. | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
| KR101237529B1 (ko) * | 2012-05-31 | 2013-02-26 | (주)씨엠코리아 | 반도체 제조장치용 히터의 표면손상부위 처리방법 및 샤프트 본딩방법 |
| US9799548B2 (en) * | 2013-03-15 | 2017-10-24 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
| JP6119430B2 (ja) * | 2013-05-31 | 2017-04-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
| DE102014202302B4 (de) * | 2013-07-03 | 2015-02-19 | Technische Universität Dresden | Vorrichtung zum Beheizen von Vorformkörpern |
| JP6212434B2 (ja) * | 2014-05-13 | 2017-10-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| KR102348108B1 (ko) * | 2015-10-05 | 2022-01-10 | 주식회사 미코세라믹스 | 온도 편차 특성이 개선된 기판 가열 장치 |
| JP6195029B1 (ja) * | 2016-07-20 | 2017-09-13 | Toto株式会社 | 静電チャック |
| US10679873B2 (en) * | 2016-09-30 | 2020-06-09 | Ngk Spark Plug Co., Ltd. | Ceramic heater |
| WO2018230408A1 (ja) * | 2017-06-14 | 2018-12-20 | 住友電気工業株式会社 | 半導体基板加熱用基板載置台および半導体基板加熱ヒータ |
| KR102078157B1 (ko) | 2018-04-16 | 2020-02-17 | 세메스 주식회사 | 기판 가열 유닛 및 이를 갖는 기판 처리 장치 |
| JP6627936B1 (ja) * | 2018-08-30 | 2020-01-08 | 住友大阪セメント株式会社 | 静電チャック装置および静電チャック装置の製造方法 |
| CN110544646B (zh) * | 2018-09-03 | 2022-06-14 | 北京北方华创微电子装备有限公司 | 加热基座、工艺腔室及退火方法 |
| WO2020170514A1 (ja) * | 2019-02-20 | 2020-08-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
| TWI811307B (zh) * | 2019-03-12 | 2023-08-11 | 鴻創應用科技有限公司 | 陶瓷電路複合結構及其製造方法 |
| JP7249901B2 (ja) * | 2019-07-16 | 2023-03-31 | 日本特殊陶業株式会社 | 保持装置の製造方法 |
| KR102232654B1 (ko) * | 2019-08-05 | 2021-03-26 | 주식회사 에이치에스하이테크 | 엘이디 스핀척 |
| JP7348877B2 (ja) * | 2020-04-20 | 2023-09-21 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
| KR102343346B1 (ko) * | 2020-06-05 | 2021-12-24 | 울산과학기술원 | 전자 소자 및 전자 소자 제어 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
| JP2002134484A (ja) * | 2000-10-19 | 2002-05-10 | Asm Japan Kk | 半導体基板保持装置 |
| JP3897563B2 (ja) | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | 加熱装置 |
| US6730175B2 (en) * | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
| US20040011780A1 (en) | 2002-07-22 | 2004-01-22 | Applied Materials, Inc. | Method for achieving a desired process uniformity by modifying surface topography of substrate heater |
-
2004
- 2004-06-16 JP JP2004178659A patent/JP2006005095A/ja not_active Abandoned
-
2005
- 2005-06-02 TW TW094118168A patent/TWI268535B/zh active
- 2005-06-09 US US11/149,080 patent/US7247818B2/en active Active
- 2005-06-16 KR KR1020050051817A patent/KR100672802B1/ko active IP Right Review Request
Also Published As
| Publication number | Publication date |
|---|---|
| TW200603231A (en) | 2006-01-16 |
| KR100672802B1 (ko) | 2007-01-24 |
| KR20060049615A (ko) | 2006-05-19 |
| JP2006005095A (ja) | 2006-01-05 |
| US20060011610A1 (en) | 2006-01-19 |
| US7247818B2 (en) | 2007-07-24 |
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