TWI268512B - A device and method to read a 2-transistor flash memory cell - Google Patents

A device and method to read a 2-transistor flash memory cell

Info

Publication number
TWI268512B
TWI268512B TW091135961A TW91135961A TWI268512B TW I268512 B TWI268512 B TW I268512B TW 091135961 A TW091135961 A TW 091135961A TW 91135961 A TW91135961 A TW 91135961A TW I268512 B TWI268512 B TW I268512B
Authority
TW
Taiwan
Prior art keywords
voltage
memory cell
flash memory
transistor
read
Prior art date
Application number
TW091135961A
Other languages
English (en)
Other versions
TW200410259A (en
Inventor
Anthonie Meindert Herman Ditewig
Franciscus Petrus Widdershoven
Roger Cuppens
Original Assignee
Koninl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninl Philips Electronics Nv filed Critical Koninl Philips Electronics Nv
Publication of TW200410259A publication Critical patent/TW200410259A/zh
Application granted granted Critical
Publication of TWI268512B publication Critical patent/TWI268512B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW091135961A 2001-12-13 2002-12-12 A device and method to read a 2-transistor flash memory cell TWI268512B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01204846 2001-12-13

Publications (2)

Publication Number Publication Date
TW200410259A TW200410259A (en) 2004-06-16
TWI268512B true TWI268512B (en) 2006-12-11

Family

ID=8181412

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091135961A TWI268512B (en) 2001-12-13 2002-12-12 A device and method to read a 2-transistor flash memory cell

Country Status (7)

Country Link
US (1) US6980472B2 (zh)
EP (1) EP1459322A2 (zh)
JP (1) JP2005512268A (zh)
KR (1) KR20040070218A (zh)
AU (1) AU2002366683A1 (zh)
TW (1) TWI268512B (zh)
WO (1) WO2003050813A2 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1597733B1 (de) * 2003-02-27 2009-12-02 Infineon Technologies AG Verfahren zum auslesen von uniform-channel-program-flash memory zellen
US7178930B2 (en) * 2005-02-23 2007-02-20 Steve Damrau Illuminating necklace
JP4885743B2 (ja) 2006-07-28 2012-02-29 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置
US7593259B2 (en) 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
US20080074922A1 (en) * 2006-09-21 2008-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. 2-transistor nonvolatile memory cell
US7706180B2 (en) * 2007-09-25 2010-04-27 Cypress Semiconductor Corporation Method and apparatus for reduction of bit-line disturb and soft-erase in a trapped-charge memory
US8045373B2 (en) * 2007-10-02 2011-10-25 Cypress Semiconductor Corporation Method and apparatus for programming memory cell array
US8355287B2 (en) * 2009-08-25 2013-01-15 Aplus Flash Technology, Inc. Method and apparatus for operation of a NAND-like dual charge retaining transistor NOR flash memory device
US8531885B2 (en) 2010-05-28 2013-09-10 Aplus Flash Technology, Inc. NAND-based 2T2b NOR flash array with a diode connection to cell's source node for size reduction using the least number of metal layers
US8917551B2 (en) * 2011-01-11 2014-12-23 Aplus Flash Technology, Inc. Flexible 2T-based fuzzy and certain matching arrays
US8493794B2 (en) * 2011-07-15 2013-07-23 Vanguard International Semiconductor Corporation Non-volatile memory cell and methods for programming, erasing and reading thereof
JP7070032B2 (ja) 2018-04-25 2022-05-18 ユナイテッド・セミコンダクター・ジャパン株式会社 不揮発性半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
US5914514A (en) * 1996-09-27 1999-06-22 Xilinx, Inc. Two transistor flash EPROM cell
EP0936629B1 (de) * 1998-02-12 2006-09-13 Infineon Technologies AG EEPROM und Verfahren zur Ansteuerung eines EEPROM
KR100701716B1 (ko) * 1999-07-29 2007-03-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 비휘발성 반도체 메모리 디바이스
US6307781B1 (en) * 1999-09-30 2001-10-23 Infineon Technologies Aktiengesellschaft Two transistor flash memory cell
US6757196B1 (en) * 2001-03-22 2004-06-29 Aplus Flash Technology, Inc. Two transistor flash memory cell for use in EEPROM arrays with a programmable logic device

Also Published As

Publication number Publication date
KR20040070218A (ko) 2004-08-06
TW200410259A (en) 2004-06-16
WO2003050813A3 (en) 2003-11-27
US20050018500A1 (en) 2005-01-27
EP1459322A2 (en) 2004-09-22
WO2003050813A2 (en) 2003-06-19
JP2005512268A (ja) 2005-04-28
AU2002366683A1 (en) 2003-06-23
AU2002366683A8 (en) 2003-06-23
US6980472B2 (en) 2005-12-27

Similar Documents

Publication Publication Date Title
DE69914746D1 (de) Halbleiter-schaltsstromvorrichtung mit betriebsverstärker und verfahren zur herstellung
ATE459964T1 (de) Halbleiterspeicherzelle und speicherarray mit einem durchbruchsphänomen in einem ultradünnen dielektrikum
TW541535B (en) Higher program VT and faster programming rates based on improved erase methods
TWI268512B (en) A device and method to read a 2-transistor flash memory cell
KR950004284A (ko) 반도체 집적회로
TWI268623B (en) Semiconductor integrated circuit device and method of manufacturing the same reading memory information at high speed from the transistor-carried nonvolatile memory cell transistor
KR950002049A (ko) 반도체 기억장치
KR880009380A (ko) 불휘발성 반도체메모리
ATE366983T1 (de) Stromarme programmiertechnik für einen schwebkörper-speichertransistor, speicherzelle und speichermatrix
WO2003012878A1 (en) Semiconductor device
KR950027845A (ko) 반도체 메모리장치
WO2002045090A3 (de) Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden auslesen von mram-speicherzellen
CN100447899C (zh) 具有稳定源线不考虑位线耦合及加载效应的快闪存储设备
KR20090020594A (ko) 스위치 소자를 갖춘 메모리 시스템
TW200516760A (en) Nonvolatile semiconductor memory device
EP0347909A3 (en) Nonvolatile memory circuit device performing stable operation in wide range of power source voltage level
US5912840A (en) Memory cell architecture utilizing a transistor having a dual access gate
WO2002080182A3 (en) Method, apparatus, and system to enhance negative voltage switching
CN101149966B (zh) 半导体存储器件及电子器件
KR880009379A (ko) 불휘발성 반도체메모리
EP0377839A3 (en) Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
US7292464B2 (en) Ferroelectric memory device
KR920006986A (ko) 불휘발성 반도체메모리
CN1639873A (zh) 沙漏随机访问存储器
US6424568B2 (en) Code addressable memory cell in flash memory device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees