TWI267981B - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device Download PDF

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Publication number
TWI267981B
TWI267981B TW091114152A TW91114152A TWI267981B TW I267981 B TWI267981 B TW I267981B TW 091114152 A TW091114152 A TW 091114152A TW 91114152 A TW91114152 A TW 91114152A TW I267981 B TWI267981 B TW I267981B
Authority
TW
Taiwan
Prior art keywords
insulating film
gate
film
conductive layer
transistor
Prior art date
Application number
TW091114152A
Other languages
English (en)
Chinese (zh)
Inventor
Naho Nishioka
Naoki Tsuji
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TWI267981B publication Critical patent/TWI267981B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW091114152A 2002-01-08 2002-06-27 Nonvolatile semiconductor memory device TWI267981B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002001138A JP4225728B2 (ja) 2002-01-08 2002-01-08 不揮発性半導体記憶装置の製造方法

Publications (1)

Publication Number Publication Date
TWI267981B true TWI267981B (en) 2006-12-01

Family

ID=19190577

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091114152A TWI267981B (en) 2002-01-08 2002-06-27 Nonvolatile semiconductor memory device

Country Status (4)

Country Link
US (1) US6657249B2 (enExample)
JP (1) JP4225728B2 (enExample)
KR (1) KR100479399B1 (enExample)
TW (1) TWI267981B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005026380A (ja) * 2003-06-30 2005-01-27 Toshiba Corp 不揮発性メモリを含む半導体装置及びその製造方法
KR100549591B1 (ko) * 2003-11-05 2006-02-08 매그나칩 반도체 유한회사 비휘발성 메모리 소자 및 그의 제조 방법
US7229880B2 (en) * 2003-11-19 2007-06-12 Promos Technologies Inc. Precision creation of inter-gates insulator
KR100564629B1 (ko) * 2004-07-06 2006-03-28 삼성전자주식회사 이이피롬 소자 및 그 제조 방법
JP4583878B2 (ja) * 2004-10-29 2010-11-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2006294751A (ja) * 2005-04-07 2006-10-26 Toshiba Corp 半導体集積回路及びその製造方法
JP4718894B2 (ja) 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US7450431B1 (en) 2005-08-24 2008-11-11 Xilinx, Inc. PMOS three-terminal non-volatile memory element and method of programming
US7687797B1 (en) 2005-08-24 2010-03-30 Xilinx, Inc. Three-terminal non-volatile memory element with hybrid gate dielectric
US7544968B1 (en) 2005-08-24 2009-06-09 Xilinx, Inc. Non-volatile memory cell with charge storage element and method of programming
US7420842B1 (en) 2005-08-24 2008-09-02 Xilinx, Inc. Method of programming a three-terminal non-volatile memory element using source-drain bias
KR100702029B1 (ko) * 2005-09-22 2007-03-30 삼성전자주식회사 플로팅된 드레인측 보조 게이트를 갖는 고전압 모스트랜지스터를 구비하는 비휘발성 메모리 소자들 및 그제조방법들
JP4810392B2 (ja) 2005-11-15 2011-11-09 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP5367755B2 (ja) * 2005-11-15 2013-12-11 株式会社東芝 不揮発性半導体記憶装置の製造方法
US20080150005A1 (en) * 2006-12-21 2008-06-26 Spansion Llc Memory system with depletion gate
JP2007201494A (ja) * 2007-03-26 2007-08-09 Toshiba Corp 不揮発性半導体記憶装置
JP2008244009A (ja) * 2007-03-26 2008-10-09 Fujitsu Ltd 半導体装置およびその製造方法
JP4564511B2 (ja) * 2007-04-16 2010-10-20 株式会社東芝 半導体装置及びその製造方法
US7897514B2 (en) * 2008-01-24 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor contact barrier
US8068370B2 (en) * 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
US20140048888A1 (en) 2012-08-17 2014-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Strained Structure of a Semiconductor Device
US9117525B2 (en) 2012-09-12 2015-08-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
JP2015177187A (ja) * 2014-03-12 2015-10-05 株式会社東芝 不揮発性半導体記憶装置
US9698147B2 (en) 2015-02-25 2017-07-04 Sii Semiconductor Corporation Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03283570A (ja) 1990-03-30 1991-12-13 Fujitsu Ltd 半導体装置及びその製造方法
GB9107952D0 (en) 1991-04-15 1991-05-29 Dow Rheinmuenster Surface crosslinked and surfactant coated absorbent resin particles and method of preparation
KR940009644B1 (ko) * 1991-11-19 1994-10-15 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
KR960012303B1 (ko) * 1992-08-18 1996-09-18 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
US5793081A (en) * 1994-03-25 1998-08-11 Nippon Steel Corporation Nonvolatile semiconductor storage device and method of manufacturing
KR970054103A (ko) * 1995-12-29 1997-07-31 김주용 플래쉬 이이피롬 셀 제조 방법
JP2001210809A (ja) * 2000-01-28 2001-08-03 Toshiba Microelectronics Corp 半導体装置の製造方法
JP4068781B2 (ja) * 2000-02-28 2008-03-26 株式会社ルネサステクノロジ 半導体集積回路装置および半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
KR20030060748A (ko) 2003-07-16
JP2003203999A (ja) 2003-07-18
JP4225728B2 (ja) 2009-02-18
US20030127681A1 (en) 2003-07-10
KR100479399B1 (ko) 2005-03-30
US6657249B2 (en) 2003-12-02

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MM4A Annulment or lapse of patent due to non-payment of fees