TWI267188B - Ferroelectric film, ferroelectric memory, and piezoelectric element - Google Patents
Ferroelectric film, ferroelectric memory, and piezoelectric elementInfo
- Publication number
- TWI267188B TWI267188B TW094101569A TW94101569A TWI267188B TW I267188 B TWI267188 B TW I267188B TW 094101569 A TW094101569 A TW 094101569A TW 94101569 A TW94101569 A TW 94101569A TW I267188 B TWI267188 B TW I267188B
- Authority
- TW
- Taiwan
- Prior art keywords
- ferroelectric
- piezoelectric element
- ferroelectric film
- film
- memory
- Prior art date
Links
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
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- Organic Chemistry (AREA)
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- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Semiconductor Memories (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
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- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004012160A JP4171908B2 (ja) | 2004-01-20 | 2004-01-20 | 強誘電体膜、強誘電体メモリ、及び圧電素子 |
Publications (2)
Publication Number | Publication Date |
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TW200531261A TW200531261A (en) | 2005-09-16 |
TWI267188B true TWI267188B (en) | 2006-11-21 |
Family
ID=34631885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094101569A TWI267188B (en) | 2004-01-20 | 2005-01-19 | Ferroelectric film, ferroelectric memory, and piezoelectric element |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050167712A1 (ja) |
EP (1) | EP1557481A3 (ja) |
JP (1) | JP4171908B2 (ja) |
KR (1) | KR100598747B1 (ja) |
CN (1) | CN100463180C (ja) |
TW (1) | TWI267188B (ja) |
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US7008669B2 (en) | 2001-06-13 | 2006-03-07 | Seiko Epson Corporation | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element |
US20050156217A1 (en) * | 2004-01-13 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method for fabricating the same |
US7497962B2 (en) * | 2004-08-06 | 2009-03-03 | Canon Kabushiki Kaisha | Method of manufacturing liquid discharge head and method of manufacturing substrate for liquid discharge head |
JP4462432B2 (ja) | 2005-08-16 | 2010-05-12 | セイコーエプソン株式会社 | ターゲット |
JP4396857B2 (ja) | 2005-08-30 | 2010-01-13 | セイコーエプソン株式会社 | 絶縁性ターゲット材料の製造方法 |
JP4553137B2 (ja) * | 2005-09-05 | 2010-09-29 | セイコーエプソン株式会社 | 複合酸化物積層体の製造方法 |
JP2007088147A (ja) * | 2005-09-21 | 2007-04-05 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4859098B2 (ja) * | 2005-10-07 | 2012-01-18 | 株式会社高純度化学研究所 | ニオブテトラアルコキシジイソブチリルメタネートおよびそれを用いたPb(Zr,Ti,Nb)O3膜形成用原料溶液 |
JP4826744B2 (ja) * | 2006-01-19 | 2011-11-30 | セイコーエプソン株式会社 | 絶縁性ターゲット材料の製造方法 |
JP2007314368A (ja) * | 2006-05-25 | 2007-12-06 | Fujifilm Corp | ペロブスカイト型酸化物、強誘電素子、圧電アクチュエータ、及び液体吐出装置 |
JP4501917B2 (ja) * | 2006-09-21 | 2010-07-14 | セイコーエプソン株式会社 | アクチュエータ装置及び液体噴射ヘッド |
EP1973177B8 (en) | 2007-03-22 | 2015-01-21 | FUJIFILM Corporation | Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device |
JP2008266771A (ja) * | 2007-03-22 | 2008-11-06 | Fujifilm Corp | 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
JP5344143B2 (ja) | 2008-12-11 | 2013-11-20 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
JP2009293130A (ja) * | 2009-08-26 | 2009-12-17 | Fujifilm Corp | ペロブスカイト型酸化物、強誘電体膜、強誘電体素子、及び液体吐出装置 |
JP5381614B2 (ja) * | 2009-10-26 | 2014-01-08 | セイコーエプソン株式会社 | 複合酸化物積層体、複合酸化物積層体の製造方法、デバイス |
CN102245513B (zh) | 2010-01-21 | 2015-10-14 | 友技科株式会社 | Pbnzt强电介质膜、溶胶凝胶溶液、成膜方法及强电介质膜的制造方法 |
GB2503435A (en) * | 2012-06-25 | 2014-01-01 | Johannes Frantti | Ferroelectric memory devices comprising lead zirconate titanate |
JP6182968B2 (ja) | 2012-08-14 | 2017-08-23 | 株式会社リコー | 電気機械変換素子、液滴吐出ヘッド、画像形成装置及び電気機械変換素子の製造方法 |
WO2016031134A1 (ja) | 2014-08-29 | 2016-03-03 | 富士フイルム株式会社 | 圧電体膜とその製造方法、圧電素子、及び液体吐出装置 |
JP6575743B2 (ja) * | 2015-01-30 | 2019-09-18 | セイコーエプソン株式会社 | 液体噴射ヘッドの駆動方法及び圧電素子並びに液体噴射ヘッド |
US20170345831A1 (en) * | 2016-05-25 | 2017-11-30 | Micron Technology, Inc. | Ferroelectric Devices and Methods of Forming Ferroelectric Devices |
CN107481751B (zh) * | 2017-09-06 | 2020-01-10 | 复旦大学 | 一种铁电存储集成电路 |
CN110021371A (zh) * | 2017-12-04 | 2019-07-16 | 北京有色金属研究总院 | 一种有机-无机钙钛矿材料的筛选方法 |
KR102703724B1 (ko) * | 2019-08-08 | 2024-09-05 | 삼성전자주식회사 | 유전체 물질층을 포함하는 박막 구조체 및 이를 구비하는 전자소자 |
CN112993198B (zh) * | 2021-01-26 | 2022-02-08 | 浙江大学 | 锗基钙钛矿光电材料、应用、制备方法和器件及制备方法 |
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EP0111568B1 (en) * | 1982-05-28 | 1986-10-15 | Matsushita Electric Industrial Co., Ltd. | Thin film electric field light-emitting device |
US5762816A (en) * | 1995-11-14 | 1998-06-09 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic composition |
JP2001181034A (ja) * | 1999-12-28 | 2001-07-03 | Tdk Corp | 圧電セラミック組成物 |
US6518609B1 (en) * | 2000-08-31 | 2003-02-11 | University Of Maryland | Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film |
JP2002316871A (ja) * | 2001-02-19 | 2002-10-31 | Murata Mfg Co Ltd | 圧電磁器組成物およびこれを用いた圧電素子 |
JP4259030B2 (ja) * | 2001-10-23 | 2009-04-30 | 株式会社村田製作所 | 積層型圧電体セラミック素子およびそれを用いた積層型圧電体電子部品 |
JP2003146660A (ja) * | 2001-11-13 | 2003-05-21 | Fuji Electric Co Ltd | 強誘電体および誘電体薄膜コンデンサ、圧電素子 |
JP4230720B2 (ja) * | 2002-05-28 | 2009-02-25 | 日本化学工業株式会社 | 誘電体セラミック原料粉末の製造方法 |
JP3791614B2 (ja) * | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
JP4720969B2 (ja) * | 2003-03-28 | 2011-07-13 | セイコーエプソン株式会社 | 強誘電体膜、圧電体膜、強誘電体メモリ及び圧電素子 |
JP2005159308A (ja) * | 2003-11-05 | 2005-06-16 | Seiko Epson Corp | 強誘電体膜、強誘電体キャパシタ、および強誘電体メモリ |
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2004
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2005
- 2005-01-14 US US11/035,129 patent/US20050167712A1/en not_active Abandoned
- 2005-01-19 TW TW094101569A patent/TWI267188B/zh active
- 2005-01-19 KR KR1020050004837A patent/KR100598747B1/ko active IP Right Grant
- 2005-01-20 CN CNB2005100025230A patent/CN100463180C/zh active Active
- 2005-01-20 EP EP05001099A patent/EP1557481A3/en not_active Withdrawn
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EP1557481A2 (en) | 2005-07-27 |
JP2005209722A (ja) | 2005-08-04 |
US20050167712A1 (en) | 2005-08-04 |
KR20050076654A (ko) | 2005-07-26 |
CN1645617A (zh) | 2005-07-27 |
KR100598747B1 (ko) | 2006-07-13 |
JP4171908B2 (ja) | 2008-10-29 |
EP1557481A3 (en) | 2006-09-20 |
CN100463180C (zh) | 2009-02-18 |
TW200531261A (en) | 2005-09-16 |
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