TWI267188B - Ferroelectric film, ferroelectric memory, and piezoelectric element - Google Patents

Ferroelectric film, ferroelectric memory, and piezoelectric element

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Publication number
TWI267188B
TWI267188B TW094101569A TW94101569A TWI267188B TW I267188 B TWI267188 B TW I267188B TW 094101569 A TW094101569 A TW 094101569A TW 94101569 A TW94101569 A TW 94101569A TW I267188 B TWI267188 B TW I267188B
Authority
TW
Taiwan
Prior art keywords
ferroelectric
piezoelectric element
ferroelectric film
film
memory
Prior art date
Application number
TW094101569A
Other languages
English (en)
Chinese (zh)
Other versions
TW200531261A (en
Inventor
Takeshi Kijima
Hiromu Miyazawa
Yasuaki Hamada
Original Assignee
Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200531261A publication Critical patent/TW200531261A/zh
Application granted granted Critical
Publication of TWI267188B publication Critical patent/TWI267188B/zh

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    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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    • H10N30/077Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
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TW094101569A 2004-01-20 2005-01-19 Ferroelectric film, ferroelectric memory, and piezoelectric element TWI267188B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004012160A JP4171908B2 (ja) 2004-01-20 2004-01-20 強誘電体膜、強誘電体メモリ、及び圧電素子

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TW200531261A TW200531261A (en) 2005-09-16
TWI267188B true TWI267188B (en) 2006-11-21

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CN1645617A (zh) 2005-07-27
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CN100463180C (zh) 2009-02-18
TW200531261A (en) 2005-09-16

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