TWI265531B - Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film - Google Patents

Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film

Info

Publication number
TWI265531B
TWI265531B TW092114842A TW92114842A TWI265531B TW I265531 B TWI265531 B TW I265531B TW 092114842 A TW092114842 A TW 092114842A TW 92114842 A TW92114842 A TW 92114842A TW I265531 B TWI265531 B TW I265531B
Authority
TW
Taiwan
Prior art keywords
films
low dielectric
mixtures
processes
film
Prior art date
Application number
TW092114842A
Other languages
English (en)
Chinese (zh)
Other versions
TW200401310A (en
Inventor
Brian Keith Peterson
John Francis Kirner
Scott Jeffrey Weigel
James Edward Macdougall
Thomas Alan Deis
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of TW200401310A publication Critical patent/TW200401310A/zh
Application granted granted Critical
Publication of TWI265531B publication Critical patent/TWI265531B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Insulating Materials (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
TW092114842A 2002-05-30 2003-05-30 Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film TWI265531B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38432102P 2002-05-30 2002-05-30
US10/638,942 US7122880B2 (en) 2002-05-30 2003-05-20 Compositions for preparing low dielectric materials

Publications (2)

Publication Number Publication Date
TW200401310A TW200401310A (en) 2004-01-16
TWI265531B true TWI265531B (en) 2006-11-01

Family

ID=29718525

Family Applications (2)

Application Number Title Priority Date Filing Date
TW092114842A TWI265531B (en) 2002-05-30 2003-05-30 Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film
TW095102894A TWI303834B (en) 2002-05-30 2003-05-30 Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW095102894A TWI303834B (en) 2002-05-30 2003-05-30 Mixtures and processes for preparing low dielectric films, films prepared therefrom and semiconductor devices comprising the film

Country Status (10)

Country Link
US (3) US7122880B2 (https=)
EP (2) EP1852903A3 (https=)
JP (2) JP2004161601A (https=)
KR (1) KR100561884B1 (https=)
CN (1) CN100539037C (https=)
AT (1) ATE365376T1 (https=)
DE (1) DE60314475T2 (https=)
IL (2) IL188790A0 (https=)
SG (1) SG110057A1 (https=)
TW (2) TWI265531B (https=)

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Also Published As

Publication number Publication date
IL156231A0 (en) 2004-01-04
TW200703375A (en) 2007-01-16
KR20030094056A (ko) 2003-12-11
DE60314475T2 (de) 2008-02-28
JP2004161601A (ja) 2004-06-10
KR100561884B1 (ko) 2006-03-17
US7482676B2 (en) 2009-01-27
DE60314475D1 (de) 2007-08-02
EP1376671A1 (en) 2004-01-02
US20060249713A1 (en) 2006-11-09
SG110057A1 (en) 2005-04-28
CN1487567A (zh) 2004-04-07
EP1852903A2 (en) 2007-11-07
JP2010123992A (ja) 2010-06-03
TWI303834B (en) 2008-12-01
EP1376671B1 (en) 2007-06-20
ATE365376T1 (de) 2007-07-15
US7294585B2 (en) 2007-11-13
EP1852903A3 (en) 2008-12-10
IL156231A (en) 2009-02-11
TW200401310A (en) 2004-01-16
US7122880B2 (en) 2006-10-17
US20060249818A1 (en) 2006-11-09
CN100539037C (zh) 2009-09-09
US20040048960A1 (en) 2004-03-11
IL188790A0 (en) 2008-04-13

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