TWI263692B - Copper or copper alloy target/copper alloy backing plate assembly - Google Patents

Copper or copper alloy target/copper alloy backing plate assembly

Info

Publication number
TWI263692B
TWI263692B TW093137901A TW93137901A TWI263692B TW I263692 B TWI263692 B TW I263692B TW 093137901 A TW093137901 A TW 093137901A TW 93137901 A TW93137901 A TW 93137901A TW I263692 B TWI263692 B TW I263692B
Authority
TW
Taiwan
Prior art keywords
copper alloy
copper
backing plate
plate assembly
target
Prior art date
Application number
TW093137901A
Other languages
English (en)
Other versions
TW200521257A (en
Inventor
Takeo Okabe
Hirohito Miyashita
Original Assignee
Nippon Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co filed Critical Nippon Mining Co
Publication of TW200521257A publication Critical patent/TW200521257A/zh
Application granted granted Critical
Publication of TWI263692B publication Critical patent/TWI263692B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C25/00—Alloys based on beryllium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/10—Alloys based on copper with silicon as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW093137901A 2003-12-25 2004-12-08 Copper or copper alloy target/copper alloy backing plate assembly TWI263692B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003428520 2003-12-25

Publications (2)

Publication Number Publication Date
TW200521257A TW200521257A (en) 2005-07-01
TWI263692B true TWI263692B (en) 2006-10-11

Family

ID=34736277

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093137901A TWI263692B (en) 2003-12-25 2004-12-08 Copper or copper alloy target/copper alloy backing plate assembly

Country Status (6)

Country Link
US (1) US9472383B2 (zh)
EP (2) EP1715077A4 (zh)
JP (1) JP4331727B2 (zh)
KR (1) KR100762084B1 (zh)
TW (1) TWI263692B (zh)
WO (1) WO2005064036A1 (zh)

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CN100396812C (zh) * 2001-12-19 2008-06-25 日矿金属株式会社 连接磁性靶和背衬板的方法以及磁性靶
WO2003064722A1 (fr) * 2002-01-30 2003-08-07 Nikko Materials Company, Limited Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible
JP4794802B2 (ja) * 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
KR100700885B1 (ko) * 2003-03-17 2007-03-29 닛코킨조쿠 가부시키가이샤 동합금 스퍼터링 타겟트 및 그 제조방법 과 반도체 소자배선
WO2005041290A1 (ja) * 2003-10-24 2005-05-06 Nikko Materials Co., Ltd. ニッケル合金スパッタリングターゲット及びニッケル合金薄膜
DE602005021535D1 (de) * 2004-11-17 2010-07-08 Nippon Mining Co Trägerplattenanordnung für sputtertargets und filmabscheidungssystem
JP2007084928A (ja) * 2005-08-26 2007-04-05 Hitachi Cable Ltd 銅合金製バッキングプレートおよび該銅合金の製造方法
CN101479400B (zh) * 2006-06-29 2011-06-22 Jx日矿日石金属株式会社 溅射靶/背衬板接合体
WO2008030368A1 (en) * 2006-09-08 2008-03-13 Tosoh Smd, Inc. Copper sputtering target with fine grain size and high electromigration resistance and methods of making the same
KR101070185B1 (ko) * 2006-10-03 2011-10-05 Jx닛코 닛세끼 킨조쿠 가부시키가이샤 구리-망간 합금 스퍼터링 타겟트 및 반도체 배선
US9677170B2 (en) * 2007-02-09 2017-06-13 Jx Nippon Mining & Metals Corporation Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same
JP5676429B2 (ja) * 2008-04-21 2015-02-25 ハネウェル・インターナショナル・インコーポレーテッド Ｄｃマグネトロンスパッタリングシステムの設計および使用
US20110123389A1 (en) 2008-09-30 2011-05-26 Jx Nippon Mining & Metals Corporation High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
EP3128039B1 (en) * 2008-09-30 2019-05-01 JX Nippon Mining & Metals Corp. High-purity copper sputtering target or high-purity copper alloy sputtering target
KR20140129250A (ko) 2009-11-20 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃-백킹 플레이트 접합체 및 그 제조 방법
KR101031293B1 (ko) 2010-06-16 2011-04-29 이구산업 주식회사 고온에서도 우수한 강도, 전기전도도를 갖는 전기, 전자부품용 고기능성 동합금 및 그 제조방법
US10006117B2 (en) 2010-10-27 2018-06-26 Jx Nippon Mining & Metals Corporation Sputtering target-backing plate assembly and method for producing same
CN103547701B (zh) 2011-09-14 2016-10-05 吉坤日矿日石金属株式会社 高纯度铜锰合金溅射靶
JPWO2013047199A1 (ja) 2011-09-30 2015-03-26 Jx日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
US9165750B2 (en) 2012-01-23 2015-10-20 Jx Nippon Mining & Metals Corporation High purity copper—manganese alloy sputtering target
JP5638697B2 (ja) 2012-01-25 2014-12-10 Jx日鉱日石金属株式会社 高純度銅クロム合金スパッタリングターゲット
FR3009428B1 (fr) * 2013-08-05 2015-08-07 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage temporaire via des couches metalliques
EP2960356B1 (en) 2013-11-06 2017-08-23 JX Nippon Mining & Metals Corporation Sputtering target/backing plate assembly
US9761420B2 (en) * 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
WO2017014990A1 (en) * 2015-07-17 2017-01-26 Honeywell International Inc. Heat treatment methods for metal and metal alloy preparation
US20170287685A1 (en) * 2016-04-01 2017-10-05 Honeywell International Inc. Sputtering target assembly having a graded interlayer and methods of making
JP6271798B2 (ja) * 2016-07-13 2018-01-31 住友化学株式会社 スパッタリングターゲットの製造方法
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
US10685821B2 (en) 2017-08-18 2020-06-16 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
JP6854306B2 (ja) 2019-02-12 2021-04-07 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体

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JPH10195649A (ja) 1996-12-27 1998-07-28 Sony Corp マグネトロンスパッタ装置および半導体装置の製造方法
JPH10330929A (ja) 1997-05-28 1998-12-15 Japan Energy Corp スパッタリングタ−ゲット用バッキングプレ−ト及びスパッタリングタ−ゲット／バッキングプレ−ト組立体
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Also Published As

Publication number Publication date
WO2005064036A1 (ja) 2005-07-14
KR100762084B1 (ko) 2007-10-01
EP1715077A1 (en) 2006-10-25
US20070051624A1 (en) 2007-03-08
EP2626444A3 (en) 2013-10-16
EP2626444A2 (en) 2013-08-14
KR20060126723A (ko) 2006-12-08
TW200521257A (en) 2005-07-01
JPWO2005064036A1 (ja) 2007-07-19
JP4331727B2 (ja) 2009-09-16
US9472383B2 (en) 2016-10-18
EP1715077A4 (en) 2010-09-29

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