TWI263117B - Negative type photosensitive resin composition containing a phenol-biphenylene resin - Google Patents

Negative type photosensitive resin composition containing a phenol-biphenylene resin

Info

Publication number
TWI263117B
TWI263117B TW093101931A TW93101931A TWI263117B TW I263117 B TWI263117 B TW I263117B TW 093101931 A TW093101931 A TW 093101931A TW 93101931 A TW93101931 A TW 93101931A TW I263117 B TWI263117 B TW I263117B
Authority
TW
Taiwan
Prior art keywords
phenol
resin
type photosensitive
negative type
biphenylene
Prior art date
Application number
TW093101931A
Other languages
English (en)
Other versions
TW200426502A (en
Inventor
Kei Arao
Makoto Nomura
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200426502A publication Critical patent/TW200426502A/zh
Application granted granted Critical
Publication of TWI263117B publication Critical patent/TWI263117B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093101931A 2003-02-06 2004-01-29 Negative type photosensitive resin composition containing a phenol-biphenylene resin TWI263117B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003029930A JP4397601B2 (ja) 2003-02-06 2003-02-06 フェノール−ビフェニレン樹脂を含むネガ型感光性樹脂組成物

Publications (2)

Publication Number Publication Date
TW200426502A TW200426502A (en) 2004-12-01
TWI263117B true TWI263117B (en) 2006-10-01

Family

ID=32956970

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093101931A TWI263117B (en) 2003-02-06 2004-01-29 Negative type photosensitive resin composition containing a phenol-biphenylene resin

Country Status (5)

Country Link
US (1) US7195858B2 (zh)
JP (1) JP4397601B2 (zh)
KR (1) KR101013187B1 (zh)
CN (1) CN1550895B (zh)
TW (1) TWI263117B (zh)

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JP4251612B2 (ja) * 2003-01-30 2009-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エポキシ含有物質を含むネガ型感光性樹脂組成物
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
JP4662793B2 (ja) * 2005-03-01 2011-03-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エポキシ含有物質を含むネガ型感光性樹脂組成物
JP4633500B2 (ja) * 2005-03-01 2011-02-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エポキシ含有物質を含むネガ型感光性樹脂組成物
US20080280230A1 (en) * 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
KR20100026740A (ko) * 2008-09-01 2010-03-10 삼성전자주식회사 포토레지스트 조성물, 이를 사용한 박막 패턴 형성 방법 및박막 트랜지스터 표시판의 제조 방법
US8304179B2 (en) * 2009-05-11 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device using a modified photosensitive layer
JP5859257B2 (ja) * 2010-09-15 2016-02-10 旭化成イーマテリアルズ株式会社 フェノール樹脂組成物並びに硬化レリーフパターン及び半導体の製造方法
JP6026097B2 (ja) * 2010-11-17 2016-11-16 旭化成株式会社 半導体素子表面保護膜又は層間絶縁膜用の感光性樹脂組成物
CN107329367B (zh) * 2011-12-09 2021-03-23 旭化成株式会社 感光性树脂组合物、固化浮雕图案的制造方法、半导体装置及显示体装置
CN103421272A (zh) * 2012-05-22 2013-12-04 汉高华威电子有限公司 一种电子封装用环氧树脂组合物及其制备方法
JP6167016B2 (ja) * 2013-10-31 2017-07-19 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
CN106104380B (zh) 2014-03-20 2020-03-06 日本瑞翁株式会社 放射线敏感性树脂组合物及电子部件
CN104330958B (zh) * 2014-10-25 2019-02-22 江阴市化学试剂厂有限公司 正胶显影液制备方法

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US4231951A (en) * 1978-02-08 1980-11-04 Minnesota Mining And Manufacturing Company Complex salt photoinitiator
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JPS56150741A (en) 1980-04-25 1981-11-21 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition
JPS6026943A (ja) 1983-07-25 1985-02-09 Hitachi Chem Co Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
US5300380A (en) * 1986-08-06 1994-04-05 Ciba-Geigy Corporation Process for the production of relief structures using a negative photoresist based on polyphenols and epoxy compounds or vinyl ethers
US5210155A (en) * 1990-08-24 1993-05-11 Exxon Chemical Patents Inc. Phenol terminated diester compositions derived from dicarboxylic acids, polyester polymers or alkyd polymers, and curable compositions containing same
US5312715A (en) * 1991-03-04 1994-05-17 Shipley Company Inc. Light-sensitive composition and process
JPH06102662A (ja) 1991-10-14 1994-04-15 Sannopuko Kk 感光性樹脂組成物
US5262280A (en) * 1992-04-02 1993-11-16 Shipley Company Inc. Radiation sensitive compositions
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AU660881B1 (en) * 1994-01-25 1995-07-06 Morton International, Inc. Waterborne photoresists having binders neutralized with amino acrylates
AU661438B1 (en) * 1994-01-25 1995-07-20 Morton International, Inc. Waterborne photoresists having polysiloxanes
US5877229A (en) * 1995-07-26 1999-03-02 Lockheed Martin Energy Systems, Inc. High energy electron beam curing of epoxy resin systems incorporating cationic photoinitiators
JPH0987362A (ja) 1995-09-21 1997-03-31 Nippon Kayaku Co Ltd 樹脂組成物及びその硬化物
JPH09132623A (ja) 1995-11-09 1997-05-20 Nippon Kayaku Co Ltd ノボラック型樹脂、エポキシ樹脂、エポキシ樹脂組成物及びその硬化物
JPH09309944A (ja) 1996-05-22 1997-12-02 Ajinomoto Co Inc 感光性樹脂組成物
US5858618A (en) * 1996-12-02 1999-01-12 Nan Ya Plastics Corporation Photopolymerizable resinous composition
JPH11269349A (ja) * 1998-03-23 1999-10-05 Hitachi Chem Co Ltd 半導体封止用エポキシ樹脂組成物及びそれを用いた半導体装置
JP3349963B2 (ja) * 1998-10-21 2002-11-25 日本電気株式会社 難燃性エポキシ樹脂組成物及びそれを用いた半導体装置
JP3460820B2 (ja) * 1999-12-08 2003-10-27 日本電気株式会社 難燃性エポキシ樹脂組成物
JP4029556B2 (ja) 2000-11-01 2008-01-09 Jsr株式会社 感光性絶縁樹脂組成物およびその硬化物
JP4251612B2 (ja) * 2003-01-30 2009-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エポキシ含有物質を含むネガ型感光性樹脂組成物

Also Published As

Publication number Publication date
JP2004240213A (ja) 2004-08-26
TW200426502A (en) 2004-12-01
CN1550895B (zh) 2010-05-12
CN1550895A (zh) 2004-12-01
US20040219451A1 (en) 2004-11-04
JP4397601B2 (ja) 2010-01-13
US7195858B2 (en) 2007-03-27
KR20040071598A (ko) 2004-08-12
KR101013187B1 (ko) 2011-02-10

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