TWI260092B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- TWI260092B TWI260092B TW093132377A TW93132377A TWI260092B TW I260092 B TWI260092 B TW I260092B TW 093132377 A TW093132377 A TW 093132377A TW 93132377 A TW93132377 A TW 93132377A TW I260092 B TWI260092 B TW I260092B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- impurity
- semiconductor device
- manufacturing
- channel
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 119
- 238000004519 manufacturing process Methods 0.000 title claims description 115
- 239000012535 impurity Substances 0.000 claims abstract description 251
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 580
- 239000000758 substrate Substances 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 55
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 46
- 229910052707 ruthenium Inorganic materials 0.000 claims description 46
- 230000007547 defect Effects 0.000 claims description 44
- 238000005496 tempering Methods 0.000 claims description 44
- 239000002344 surface layer Substances 0.000 claims description 29
- 239000004575 stone Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 8
- 230000004913 activation Effects 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005549 size reduction Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 63
- 238000012986 modification Methods 0.000 description 63
- 238000002347 injection Methods 0.000 description 55
- 239000007924 injection Substances 0.000 description 55
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 40
- 229910052796 boron Inorganic materials 0.000 description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 35
- 238000000034 method Methods 0.000 description 32
- 239000011574 phosphorus Substances 0.000 description 32
- 229910052698 phosphorus Inorganic materials 0.000 description 32
- 238000002513 implantation Methods 0.000 description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 18
- 229910052733 gallium Inorganic materials 0.000 description 18
- 230000001133 acceleration Effects 0.000 description 16
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 15
- 229910001936 tantalum oxide Inorganic materials 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 6
- 238000010306 acid treatment Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QZLIUFNMYYCGQN-UHFFFAOYSA-N [Ge].[P] Chemical compound [Ge].[P] QZLIUFNMYYCGQN-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- -1 and here Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2004/015532 WO2006043323A1 (ja) | 2004-10-20 | 2004-10-20 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200614503A TW200614503A (cs) | 2006-05-01 |
| TWI260092B true TWI260092B (en) | 2006-08-11 |
Family
ID=36202748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132377A TWI260092B (en) | 2004-10-20 | 2004-10-26 | Semiconductor device and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TWI260092B (cs) |
| WO (1) | WO2006043323A1 (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545210B (zh) * | 2012-07-13 | 2015-12-02 | 中芯国际集成电路制造(上海)有限公司 | 深度耗尽沟道场效应晶体管及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62219636A (ja) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | 半導体装置 |
| JP2700320B2 (ja) * | 1988-02-23 | 1998-01-21 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JPH0282576A (ja) * | 1988-09-19 | 1990-03-23 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JPH05343666A (ja) * | 1991-08-30 | 1993-12-24 | Sgs Thomson Microelectron Inc | 集積回路トランジスタ |
| JP3142614B2 (ja) * | 1991-10-16 | 2001-03-07 | 沖電気工業株式会社 | Ｎチャネルｍｏｓｆｅｔの製造方法 |
| JPH1041240A (ja) * | 1996-07-25 | 1998-02-13 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2002025972A (ja) * | 2000-07-04 | 2002-01-25 | Asahi Kasei Microsystems Kk | 半導体装置の製造方法 |
-
2004
- 2004-10-20 WO PCT/JP2004/015532 patent/WO2006043323A1/ja not_active Ceased
- 2004-10-26 TW TW093132377A patent/TWI260092B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200614503A (cs) | 2006-05-01 |
| WO2006043323A1 (ja) | 2006-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |